检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

970 篇 会议
134 篇 期刊文献

馆藏范围

1,104 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

660 篇 工学
- 493 篇 电气工程
- 244 篇 电子科学与技术（可...
- 95 篇 计算机科学与技术...
- 86 篇 信息与通信工程
- 85 篇 材料科学与工程（可...
- 29 篇 软件工程
- 16 篇 控制科学与工程
- 14 篇 仪器科学与技术
- 11 篇 化学工程与技术
- 7 篇 冶金工程
- 6 篇 光学工程
- 5 篇 动力工程及工程热...
- 4 篇 建筑学
- 2 篇 力学（可授工学、理...
- 2 篇 轻工技术与工程
- 1 篇 机械工程
- 1 篇 土木工程
- 1 篇 测绘科学与技术
- 1 篇 航空宇航科学与技...
136 篇 理学
- 117 篇 物理学
- 23 篇 数学
- 12 篇 化学
- 4 篇 统计学（可授理学、...
- 1 篇 系统科学
35 篇 管理学
- 34 篇 管理科学与工程(可...
- 6 篇 工商管理
6 篇 经济学
- 6 篇 应用经济学
1 篇 法学
- 1 篇 社会学
1 篇 医学
- 1 篇 临床医学

主题

501 篇 bicmos integrate...
209 篇 silicon germaniu...
168 篇 heterojunction b...
150 篇 cmos technology
137 篇 germanium silico...
100 篇 bipolar transist...
92 篇 radio frequency
86 篇 cmos integrated ...
75 篇 cmos process
59 篇 implants
58 篇 voltage
53 篇 bicmos
48 篇 isolation techno...
40 篇 silicon
38 篇 sige
35 篇 bicmos technolog...
34 篇 power amplifiers
34 篇 mos devices
33 篇 gain
33 篇 capacitance

机构

31 篇 ihp
29 篇 stmicroelectroni...
10 篇 stmicroelect f-3...
10 篇 school of electr...
9 篇 ibm thomas j. wa...
9 篇 imec leuven
9 篇 auburn univ dept...
8 篇 ihp d-15236 fran...
8 篇 texas instrument...
7 篇 philips research...
7 篇 georgia inst tec...
7 篇 ibm corp thomas ...
6 篇 microelectronics...
6 篇 stmicroelectroni...
6 篇 ihp technol pk 2...
6 篇 central research...
6 篇 ibm microelectro...
5 篇 stmicroelectroni...
5 篇 texas tech univ ...
5 篇 nxp semicond res...

作者

22 篇 cressler john d.
21 篇 p. chevalier
20 篇 b. heinemann
19 篇 d. knoll
18 篇 r. barth
17 篇 a. chantre
16 篇 b. tillack
13 篇 h. rucker
13 篇 chevalier p.
13 篇 w. winkler
13 篇 p. schley
12 篇 g. avenier
12 篇 t. yamazaki
11 篇 d. harame
10 篇 s. marschmeyer
10 篇 john d. cressler
10 篇 dai fa foster
10 篇 j. dunn
10 篇 a. fox
10 篇 s. decoutere

语言

1,104 篇 英文

检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

共 1104 条记录，以下是471-480 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

Notice of Violation of IEEE Publication Principles: A bicmos SiGe Direct-Conversion DBS Satellite TV Tuner with on-chip ADCs for SiP Integration with a CMOS Demodulator-on-Host

Notice of Violation of IEEE Publication Principles: A BiCMOS...

引用

bipolar/bicmos circuits and technology meeting

作者： A. Maxim Silicon Laboratories Inc. Austin TX USA

Notice of Violation of IEEE Publication Principles "A bicmos SiGe Direct-Conversion DBS Satellite TV Tuner with on-chip ADCs for SiP Integration with a CMOS Demodulator-on-Host" by A. Maxim, in the Proceedings of the bipolar/bicmos circuits and technology meeting, 2007. BCTM '07. IEEE Sept. 30 2007-Oct. 2 2007 Page(s):90-97 After careful and considered review, it has been determined that the above paper is in violation of IEEE's Publication Principles. Specifically, the paper contains information that Adrian Maxim admits had been falsified. In response to an inquiry on this misconduct, Mr. Maxim acknowledged that the following people who have been listed as co-authors on several of his papers are fabricated names and that he is the only author: C. Turinici, D. Smith, S. Dupue, M. Gheorge, R. Johns, D. Antrik Additionally, in papers by Mr. Maxim that have co-authors other than those listed above, it was discovered in some cases that he had not consulted with them while writing the papers, and submitted papers without their knowledge. Although Mr. Maxim maintains that not all of the data is falsified, IEEE nevertheless cannot assure the integrity of papers posted by him because of his repeated false statements. Due to the nature of this violation, reasonable effort should be made to remove all past references to the above paper, and to refrain from any future references. Partitioning a DBS satellite TV receiver in a front-end RF-to-digital tuner that includes the baseband ADC converters and a digital-only demodulator-on-host resulted in a low cost and a good isolation between the analog front-end and the digital back-end, having no interface components and noise coupling issues. The two ICs were assembled together achieving a system-in-package. A direct-conversion bicmos tuner benefits from the low 1/f noise and high f tau bipolar transistors resulting in a lower noise figure in comparison with CMOS implementations. The on-chip LNA noise was reduced by using a noise

关键词：

来源：评论

学校读者我要写书评

暂无评论

A Direct-Conversion Mixer with a DC-offset Cancellation for WLAN

A Direct-Conversion Mixer with a DC-offset Cancellation for ...

引用

bipolar/bicmos circuits and technology meeting

作者： Q. Xu X. Hu Y. Jan Y. Shi F.F. Dai R.C. Jaeger Institute of Semiconductors Chinese Academy and Sciences Beijing China Department of Electrical & Computer Engineering Aubum University Auburn AL USA

ISBN: (纸本)9781424410187;1424410185

This paper presents a 5GHz double-balanced mixer with DC-offset cancellation circuit for direct-conversion receiver compliant with IEEE 802.11a wireless LAN standard. The analog feedback loop is used, to eliminate the DC-offset at the output of the double-balanced mixer. The test results show that the mixer with DC-offset cancellation circuit has voltage conversion gain of 9.5dB at 5.15GHz, noise figure of 13.5dB, IIP3 of 7.6dBm, 1.73mV DC-offset voltage and 67mW power with 3.3-V power supply. The DC-offset cancellation circuit has less than 0.1mm 2 additional area and 0.3mW added power dissipation. The direct conversion WLAN receiver has been implemented in a 0.35μm SiGe bicmos technology.

关键词： Wireless LAN Circuit testing Voltage Feedback loop Noise figure Power supplies Power dissipation Silicon germanium Germanium silicon alloys bicmos integrated circuits

来源：评论

学校读者我要写书评

暂无评论

Notice of Violation of IEEE Publication Principles: 0.155-2.5Gbps SiGe bicmos Burst-Mode Laser Driver Using a Digital Implementation of the Automatic Power Control Loop

Notice of Violation of IEEE Publication Principles: 0.155-2....

引用

bipolar/bicmos circuits and technology meeting

作者： Adrian Maxim Maxime Inc. Austin TX USA

Notice of Violation of IEEE Publication Principles "0.155-2.5Gbps SiGe bicmos Burst-Mode Laser Driver Using a Digital Implementation of the Automatic Power Control Loop" by A. Maxim, in the Proceedings of the bipolar/bicmos circuits and technology meeting, 2007. BCTM '07. IEEE Sept. 30 2007-Oct. 2 2007 Page(s):119 - 122 After careful and considered review, it has been determined that the above paper is in violation of IEEE's Publication Principles. Specifically, the paper contains information that Adrian Maxim admits had been falsified. In response to an inquiry on this misconduct, Mr. Maxim acknowledged that the following people who have been listed as co-authors on several of his papers are fabricated names and that he is the only author: C. Turinici D. Smith S. Dupue Additionally, in papers by Mr. Maxim that have co-authors other than those listed above, it was discovered in some cases that he had not consulted with them while writing the papers, and submitted papers without their knowledge. Although Mr. Maxim maintains that not all of the data is falsified, IEEE nevertheless cannot assure the integrity of papers posted by him because of his repeated false statements. Due to the nature of this violation, reasonable effort should be made to remove all past references to the above paper, and to refrain from any future references. A multi-standard laser driver for G-PON/E-PON applications supporting data rates up to 2.5 Gbps was realized in a 0.2 mum SiGe bicmos technology. A fast switching bias current generator that handles minimum burst on/off times of 576/96 ns was achieved by building a scaled-down replica signal path. A low supply voltage operation was ensured using differential switches with resistor tail and a common-mode loop that sets the modulation dependent driving voltage swing and tail current values. A digital automatic power control loop was implemented to maintain a constant average optical power over temperature corners and transmitter lifetime, wh

关键词：

来源：评论

学校读者我要写书评

暂无评论

Notice of Violation of IEEE Publication Principles: A Zero-Second-IF SiGe bicmos Satellite Radio Tuner Using a Single PLL for Both RF and IF LO Generation and a Replica Ring-VCO Calibrated IF Filter

Notice of Violation of IEEE Publication Principles: A Zero-S...

引用

bipolar/bicmos circuits and technology meeting

作者： A. Maxim M. Gheorge C. Turinici Maxime Inc. Austin TX USA

Notice of Violation of IEEE Publication Principles "A Zero-Second-IF SiGe bicmos Satellite Radio Tuner Using a Single PLL for Both RF and IF LO Generation and a Replica Ring-VCO Calibrated IF Filter" by Maxim, A.; Gheorge, M.; Turinici, C.; in the Proceedings of the IEEE bipolar/bicmos circuits and technology meeting, 2007. BCTM '07. Sept. 30 2007-Oct. 2 2007 Page(s):1 - 4 After careful and considered review, it has been determined that the above paper is in violation of IEEE's Publication Principles. Specifically, the paper contains information that Adrian Maxim admits had been falsified. In response to an inquiry on this misconduct, Mr. Maxim acknowledged that the following people who have been listed as co-authors on several of his papers are fabricated names and that he is the only author: C. Turinici, D. Smith, S. Dupue, M. Gheorge, R. Johns, D. Antrik Additionally, in papers by Mr. Maxim that have co-authors other than those listed above, it was discovered in some cases that he had not consulted with them while writing the papers, and submitted papers without their knowledge. Although Mr. Maxim maintains that not all of the data is falsified, IEEE nevertheless cannot assure the integrity of papers posted by him because of his repeated false statements. Due to the nature of this violation, reasonable effort should be made to remove all past references to the above paper, and to refrain from any future references. A fully-integrated tuner for digital satellite audio radio applications using a second-zero-IF dual conversion architecture was realized in a 0.2 mum SiGe bicmos technology. An autonomous RF-AGC and a channel decoder IC controlled IF-AGC were used to optimize the signal path gain for a wide range of input signal levels. A single PLL drives both RF and IF mixers, resulting in a smaller die area and lower power dissipation. Down-converting the signal to baseband further reduces tuner's power due to a lower required ADC sampling frequency and resolution.

关键词：

来源：评论

学校读者我要写书评

暂无评论

High Performance, Low Complexity Vertical PNP BJT Optimization for a 0.24 μm SiGe bicmos technology

High Performance, Low Complexity Vertical PNP BJT Optimizati...

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： B. Voegeli P. Gray M. Dahlstrom N. Feilchenfeld B. Rainey R. Previti-Kelly S. St. Onge A. Joseph J. Dunn IBM Systems and Technology Group Essex Junction VT USA

An isolated vertical PNP BJT with f T of 28 GHz and f MAX of 26 GHz available as a modular component in a 0.24 μm SiGe bicmos technology is described. This paper presents, to the authors' knowledge, the highest f T ever published for a homojunction PNP device, as well as for a modular PNP in a bicmos technology. The VPNP device is fabricated using a low complexity integration scheme and is optimized to complement the high breakdown SiGe NPN HBT

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits Isolation technology Heterojunction bipolar transistors Silicon carbide CMOS technology CMOS process Implants Fabrication

来源：评论

学校读者我要写书评

暂无评论

Highly Efficient Class E SiGe Power Amplifier Design for Wireless Sensor Network Applications

Highly Efficient Class E SiGe Power Amplifier Design for Wir...

引用

bipolar/bicmos circuits and technology meeting

作者： Donald Y.C. Lie J. Lopez J. F. Rowland Department of Electrical and Computer Engineering Texas Tech University Lubbock TX USA Dynamic Research Corporation San Diego CA USA SPAWAR System Center SSC-Pacific San Diego CA USA

ISBN: (纸本)9781424410187;1424410185

This paper discusses the design of highly efficient and monolithic medium-power RF class E SiGe power amplifiers (PAs) in IBM 7HP SiGe bicmos technology at both 900 MHz and 2.4 GHz for wireless sensor applications. Without needing off-chip on-board matching, we achieved high power-added-efficiency (PAE) for the single-stage class E SiGe PAs at ~70% (900 MHz) and ~60% (2.4 GHz), respectively. Using large number of downbonds at the emitter node of the PA, optimal device sizing and layout, and careful circuit design with bondwire tank inductors, maximum PAE of 62% at 2.4 GHz is obtained, which performance rivals that of commercially-available III-V PA modules. Taking advantages of the higher output power with breakdown robustness and the excellent PAE for SiGe PAs vs. CMOS PAs, one can not only shrink the battery size and therefore sensor volume, but also reduce the number of nodes required in a wireless sensor network to bring down system cost and simplify data fusion. With improved understanding of on-chip PA loss mechanisms, it is likely that we can push these high-efficient SiGe PAs into higher frequencies of operation (say 10 GHz) to utilize smaller antenna size, enabling new and exciting wireless sensor network applications.

关键词： Silicon germanium Germanium silicon alloys High power amplifiers Wireless sensor networks Radiofrequency amplifiers Radio frequency bicmos integrated circuits Circuit synthesis Bonding Inductors

来源：评论

学校读者我要写书评

暂无评论

High-Speed SiGe bicmos Technologies: 120-nm Status and End-of-Roadmap Challenges

High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-o...

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： P. Chevalier B. Barbalat M. Laurens B. Vandelle L. Rubaldo B. Geynet S.P. Voinigescu T.O. Dickson N. Zerounian S. Chouteau D. Dutartre A. Monroy F. Aniel G. Dambrine A. Chantre Crolles STMicroelectronics Crolles France Institut dE28099Electronique Fondamentale Université Paris-Sud 11 Orsay France UMR CNRS 8520 USTL IEMN-DHS Villeneuve d'Ascq France Edward S. Rogers Sr. Department of ECE University of Toronto Toronto ONT Canada

This paper presents the status of high-speed SiGe bicmos technologies at STMicroelectronics. Process and electrical characteristics of two 120-nm platforms, qualified or under development, are presented together with results demonstrated on optical and millimeter-wave circuits. Advanced developments addressing end-of-roadmap bicmos are also presented and discussed

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits CMOS technology Heterojunction bipolar transistors Production High speed optical techniques Millimeter wave circuits Frequency Copper

来源：评论

学校读者我要写书评

暂无评论

A Novel Isolation Scheme featuring Cavities in the Collector for a High-Speed 0.13μm SiGe:C bicmos technology

A Novel Isolation Scheme featuring Cavities in the Collector...

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： L.J. Choi S. Van Huylenbroeck J. Donkers W.D. van Noort A. Piontek A. Sibaja-Hernandez P. Meunier-Beillard F. Neuilly E. Kunnen P. Leray F. Vleugels R. Venegas E. Hijzen S. Decoutere IMEC Interuniversity Microelectronics Center Leuven Belgium NXP Leuven Leuven Belgium NXP Semiconductors 2070 Route 52 P.O. Box 1279 Hopewell Junction NY 12533 USA K.U.Leuven ESAT Kasteelpark Arenberg 10 3001 Leuven Belgium ESAT Katholieke Universiteit Leuven Leuven Belgium NXP Semiconductors Caen Cedex 5 France

A novel isolation scheme is presented in this work, which uses oxide filled cavities in the collector to separate the extrinsic base and collector regions. When incorporated in our 0.13μm SiGe:C bicmos technology, a further improvement of the device RF performance is obtained, yielding devices with f T /f max values of 210/290GHz and 255/210GHz.