There have been many demonstrations of Si and SiGe power amplifers (PAs) that have achieved good published performance. However, penetration of these technologies into the mainstream handset power amplifier market has...
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There have been many demonstrations of Si and SiGe power amplifers (PAs) that have achieved good published performance. However, penetration of these technologies into the mainstream handset power amplifier market has been limited. In this paper, we review some of the state-of-the-art PA results in these technologies and discuss the performance challenges for silicon-based PAs. We also discuss some important on-going technology developments that may make these technologies more competitive for future applications. Finally, we present and discuss some power amplifer specific modeling issues that are not generally addressed in foundry offerings/design kits
The following topics are dealt with: power amplifiers; high frequency circuits and techniques; SiGe HBT optimization; advanced device modeling; RF transceivers; RF circuit blocks; passive modeling and substrate effect...
The following topics are dealt with: power amplifiers; high frequency circuits and techniques; SiGe HBT optimization; advanced device modeling; RF transceivers; RF circuit blocks; passive modeling and substrate effects; high data-rate circuits; thermal management and protection; special bipolar devices; compact model scaling and extraction techniques; power devices and IC technology; analog circuits and techniques; emerging technologies; high performance SiGe HBTs; bicmoscircuits; bipolarcircuits.
This work reports on a 130 nm bicmostechnology with high-speed SiGe:C HBTs featuring a transit frequency of 255 GHz and a maximum oscillation frequency of 315 GHz at an emitter area of 0.17 x 0.53 mum 2 . A minimum g...
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This work reports on a 130 nm bicmostechnology with high-speed SiGe:C HBTs featuring a transit frequency of 255 GHz and a maximum oscillation frequency of 315 GHz at an emitter area of 0.17 x 0.53 mum 2 . A minimum gate delay of 3.0 ps was achieved for CML ring oscillators. Breakdown voltages of the HBTs are measured to be BV CEO =1.8 V, BV CBO =5.6 V, andBV EBO =1.9 V.
The effects of proton radiation on SiGe HBTs with guard rings are investigated in this work. DC measurements on pre- and post-radiated devices show that different effects on the forward-mode and on the inverse-mode Gu...
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The effects of proton radiation on SiGe HBTs with guard rings are investigated in this work. DC measurements on pre- and post-radiated devices show that different effects on the forward-mode and on the inverse-mode Gummel characteristics are observed due to the implementation of guard rings for SiGe HBTs. The inverse-mode Gummel plot shows a distinctive increase of emitter current after proton radiation, which has not been observed in any previous studies. SPICE Gummel-Poon models were extracted for both pre- and post-radiated devices. By analyzing the measured and simulated results, the parasitic substrate-collector junction diode associated with SiGe HBTs has been identified to be the source of the new phenomenon. It is believed that the radiation damages in the substrate-collector junction near the deep trench edges cause the increase of the emitter current observed in the inverse-mode Gummel plot
A new forced emitter current method Is proposed for the simultaneous measurement of collector and substrate series resistance in bipolar transistors. Compared with conventional series resistance extraction method, thi...
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This paper summarizes the electrical characterization of MIM capacitor realized in three-dimensional. High density of 35nF/mm2 is obtained with low leakage current. Its integration in bicmostechnology is demonstrated...
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An asymmetrical spacer LDMOSFET integrated in a 0.25μm bicmostechnology is presented. Improved RF performances are obtained with this new architecture: fT close to 35GHz with BVds larger than 15V. Process integratio...
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The design of a fully integrated RF switch on standard SiGe-CMOS technology is presented and discussed. A case study for 5-GHz indoor WLAN applications is reported. It allows on-chip T/R antenna switching operations p...
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Transistor mismatch is a key parameter for the design and operation of advanced analog circuits. We present for the first time data from several generations of bicmostechnology nodes for VBE and current gain (β) mis...
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