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IEEE bipolar/bicmos circuits and technology meeting

作者： Bardsley, Scott Dillon, Christopher Kummaraguntla, Ravi Lane, Charles Ali, Ahmed M. A. Rigsbee, Baeton Combs, Darren Analog Devices Inc Greensboro NC 27409 USA

This paper describes a 14-bit 80-MSPS ADC with 100-dB SFDR at 70-MHz input frequency in a 0.35-mu m single-well bicmos technology drawing 1.2 W from a dual 3.3 V/5.0 V supply. Key barriers to high dynamic range in pipeline ADCs at high clock rates and some methods to overcome these barriers will be presented. These methods include a sampling front-end without the use of a designated Sample and Hold (S/H). A bicmos switching input buffer is used along with the strategic use of bicmos design techniques. Also, calibration is combined with capacitor shuffling to maximize linearity with minimal noise impact.

关键词： analog-to-digital converter (ADC) boost bootstrap capacitor shuffling comparator flash high speed input buffer latching comparator pipeline switched capacitor

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A bicmos technology featuring a 300/330 GHz (fT/fmax) SiGe HBT for millimeter wave applications

A BiCMOS technology featuring a 300/330 GHz (fT/fmax) SiGe H...

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2006 bipolar/bicmos circuits and technology meeting

作者： Orner, B.A. Dahlström, M. Pothiawala, A. Rassel, R.M. Liu, Q. Ding, H. Khater, M. Ahlgren, D. Joseph, A. Dunn, J. IBM Microelectronics Division IBM Mailstop 972D Essex Junction VT 05452 IBM T. J. Watson Research Center Yorktown Heights NY 10598 IBM Microelectronics Division Hopewell Junction NY 12533

We present a 0.13 μm SiGe bicmos technology for millimeter wave applications. This technology features a high performance HBT (fT = 300 GHz /fmax = 330 GHz) along with various newly developed millimeter wave features... 详细信息

ISBN: (纸本)1424404584

关键词： Heterojunction bipolar transistors

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A 5GHz series coupled bicmos quadrature VCO with wide tuning range

A 5GHz series coupled BiCMOS quadrature VCO with wide tuning...

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2006 bipolar/bicmos circuits and technology meeting

作者： Kakani, Vasanth Dai, Foster F. Jaeger, Richard C. Dept. of Electrical and Computer Engineering Auburn University Auburn AL 36849-5201 United States

ISBN: (纸本)1424404584

This paper presents a novel quadrature VCO (QVCO) implemented in a 47GHz SiGe technology. The QVCO is a serially coupled LC VCO that utilizes SiGe HBTs for oscillation and MOSFETs for coupling. The SiGe bicmos QVCO prototype achieves about 14.6% tuning range from 4.3 to 5 GHz. The phase noise of the QVCO is measured as - 115dBc/Hz @ 2MHz offset. The 5GHz QVCO core consumes 6mA current under 3.3V power supply and occupies 0.88mm2 area. © 2006 IEEE.

关键词： bicmos technology

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A 77 GHz (W-band) SiGe LNA with a 6.2 dB noise figure and gain adjustable to 33 dB

A 77 GHz (W-band) SiGe LNA with a 6.2 dB noise figure and ga...

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bipolar/bicmos circuits and technology meeting

作者： Reuter, Ralf Yin, Yi Freescale Halbleiter GmbH TSO Technol Solut Org RF IF Innovat Ctr Munich Schatzbogen 7 D-81829 Munich Germany

ISBN: (纸本)9781424404582

This paper presents a state-off the art low-noise SiGe-amplifier (LNA) for the frequency range from 75 up to 85 GHz integrated in a 0.18 mu m bicmos technology [1, 2]. The LNA shows noise figures of about 6.2 dB at 77 GHz and simultaneously extremely high gain adjustable from nearly 0 dB up to 33 dB at 77 GHz. The possibility to fully disable the LNA completes the functionality of the presented circuit. To the knowledge of the author this combination demonstrates the best performance in noise and gain ever reported for a commercial bicmos process [3, 4]. Microstrip transmission lines in combination with integrated MIM capacitors are used as matching elements. The SiGe(C)-HBT demonstrates A typical maximum f(T) and f(max) performance of approx. 200 GHz, respectively.

关键词： silicon bipolar/bicmos RF circuits amplifier noise

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A 100-dB SFDR 80-MSPS 14-bit 0.35-μm bicmos pipeline ADC

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IEEE JOURNAL OF SOLID-STATE circuits 2006年第9期41卷 2144-2153页

作者： Bardsley, Scott Dillon, Christopher Kummaraguntla, Ravi Lane, Charles Ali, Ahmed M. A. Rigsbee, Baeton Combs, Darren Analog Devices Inc Greensboro NC 27409 USA

关键词： analog-to-digital converter (ADC) boost bootstrap capacitor shuffling comparator flash high speed input buffer latching comparator pipeline switched capacitor

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5-GHz WLAN standards compliant image reject radio receiver on low-cost SiGe-CMOS technology

5-GHz WLAN standards compliant image reject radio receiver o...

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2006 bipolar/bicmos circuits and technology meeting

作者： Zito, Domenico Neri, Bruno University of Pisa I-56122 Pisa Italy

ISBN: (纸本)1424404584

A fully integrated heterodyne receiver with 1.1 GHz of intermediate frequency is presented. The circuits has been designed to be compliant with the multi-standard (IEEE 802.11a and HiPerLAN/2) indoor 5-6 GHz WLAN applications. It consists of a selective low noise amplifier with a passive notch filter centred at the image frequency and a image reject mixer realized according to Hartley's scheme. The circuit has been implemented in a standard SiGe-CMOS process and exhibits 54 dB of total image rejection, 4.7 dB of noise figure, 68 dB of LO-to-RF leakage attenuation and a input-referred 1-dB compression point equal to -20dBm. ©2006 IEEE.

关键词： bicmos technology

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Analysis of factors contributing to common-base avalanche instabilities in advanced SiGe HBTs

Analysis of factors contributing to common-base avalanche in...

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2006 bipolar/bicmos circuits and technology meeting

作者： Grens, Curtis M. Cressler, John D. Joseph, Alvin J. School of Electrical and Computer Engineering N.W. Georgia Institute of Technology 85 Fifth Street Atlanta GA 30308 United States IBM Microelectronics Essex Junction VT 05452 United States

ISBN: (纸本)1424404584

Factors contributing to the observed bias-dependent features in common-base (CB) dc instability characteristics are examined for advanced SiGe HBTs. Parameters relevant to CB instabilities are identified and extracted from data to yield improved physical insight, a straightforward estimation methodology, and simple comparison between samples. © 2006 IEEE.

关键词： bicmos technology

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Schottky barrier diodes for millimeter wave SiGe bicmos applications

Schottky barrier diodes for millimeter wave SiGe BiCMOS appl...

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2006 bipolar/bicmos circuits and technology meeting

作者： Rassel, R.M. Johnson, J.B. Orner, B.A. Reynolds, S.K. Dahlström, M.E. Rascoe, J.S. Joseph, A.J. Gaucher, B.P. Dunn, J.S. Onge, S.A.St. IBM Systems and Technology Group 1000 River Road Essex Junction VT 05452 United States

ISBN: (纸本)1424404584

For the first time, a high performance, low leakage Schottky barrier diode (SBD) with cutoff frequency above 1.0 THz in a 130nm SiGe bicmos technology for millimeter-wave application is described. Device optimization has been evaluated by varying critical process and layout parameters such as, anode size, cathode depth, cathode resistivity, junction tailoring, and guardring optimization is investigated. © 2006 IEEE.

关键词： Schottky barrier diodes

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MEMS-based reconfigurable multi-band bicmos power amplifier

MEMS-based reconfigurable multi-band BiCMOS power amplifier

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2006 bipolar/bicmos circuits and technology meeting

作者： De Graauw, A.J.M. Steeneken, P.G. Chanlo, C. Dijkhuis, J. Pramm, S. Van Bezooijen, A. Ten Dolle, H.K.J. Van Straten, F. Lok, P. Philips Semiconductors ICRF Gerstweg 2 6534AE Nijmegen Netherlands Philips Research Laboratories Prof. Holstlaan 4 5656AA Eindhoven Netherlands

ISBN: (纸本)1424404584

This paper presents a small dual-band 0.9GHz /1.8GHz inverse class F power amplifier with load-switch functionality using a single bicmos amplifier line-up with a MEMS based reconfigurable matching network. The realized prototype measures 40mm2, offers 31dBm with 40% efficiency at 0.9GHz and 30dBm with 34% at 1.8GHz. The load-switch provides up to 10% efficiency improvement at 0.9GHz for reduced power levels. © 2006 IEEE.

关键词： bicmos technology

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A high-slew rate SiGe bicmos operational amplifier for operation down to deep cryogenic temperatures

A high-slew rate SiGe BiCMOS operational amplifier for opera...

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2006 bipolar/bicmos circuits and technology meeting

作者： Krithivasan, Ramkumar Lu, Yuan Najafizadeh, Laleh Zhu, Chendong Cressler, John D. Chen, Suheng Ulaganathan, Chandradevi Blalock, Benjamin J. School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Drive N.W. Atlanta GA 30332-0250 United States University of Tennessee Knoxville TN 37996-2100 United States

ISBN: (纸本)1424404584

We investigate, for the first time, the design and implementation of a high-slew rate op-amp in SiGe bicmos technology capable of operation across very wide temperature ranges, and down to deep cryogenic temperatures. We achieve the first monolithic op-amp (for any material system) capable of operating reliably down to 4.3 K. Two variants of the SiGe bicmos op-amp were implemented using alternative biasing schemes, and the effects of temperature on these biasing schemes, and their impact on the overall op-amp performance, is investigated. © 2006 IEEE.

关键词： Operational amplifiers

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