A low-voltage, feedforward-linearized bipolar mixer realizes an input IP3 of + 14.3 dBm and an input IP2 of + 54.5 dBm at 2.4 GHz. Conversion (power) gain over the 1-6 GHz RF input range is 12.4 +/- 0.35 dB, while the...
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A low-voltage, feedforward-linearized bipolar mixer realizes an input IP3 of + 14.3 dBm and an input IP2 of + 54.5 dBm at 2.4 GHz. Conversion (power) gain over the 1-6 GHz RF input range is 12.4 +/- 0.35 dB, while the input IP3 is 13.6 +/- 1.8 dBm over, the same frequency range. The broadband mixer's RF input impedance varies from 60.3-j7.1 at 2.4 GHz to 57.4-jl6.6 Omega at 5.8 GHz. Measured SSB (50 Omega) noise figure is 18.6 dB at 2.4 GHz. No on-chip inductors are used in the design, and the 0.14 mm(2) (active area) mixer dissipates 7.2 mW from a (minimum) 1.2 V supply.
A QSA airgap isolated HBT module, embedded in a 0.13 m bicmostechnology, reaches fT/fmax values of 205/275GHz and a 3.5ps CML gate-delay. A 17GHz LNA using high quality passives sustains above 8kV HBM ESD stress. ...
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This paper explores the application of SiGe bicmostechnology to mm-wave transceivers with analog and digital signal processing. A review of 10-80Gb/s SERDES performance across 3 SiGe bicmos and CMOS technology nodes ...
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We present the first investigation of the optimal implementation of SiGe bicmos precision voltage references for extreme temperature range applications (+120°C to -180°C and below). We have developed and fab...
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We present a highly miniaturized front end module (FEM) for GSM. The module consists of a pure silicon bicmos RF power amplifier (PA) chip, a bicmos die for bias/control functions and a pHEMT switch die, all flipped o...
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A broadband and scalable model is developed to accurately simulate on-chip inductors of various dimensions and substrate resistivities. The broadband accuracy is proven over frequencies up to 20 GHz, even beyond reson...
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This paper presents a comparison of 100 GHz Colpitts VCOs fabricated in two generations of SiGe bicmostechnology, with MOS and HBT varactors and with integrated inductors. Based on a study of the optimal biasing cond...
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A fully-integrated frequency synthesizer for DBS satellite front-ends was realized in a low cost 50GHz fT SiGe bicmos process. Two half-rate VCOs followed by Gilbert frequency doublers generate the 9.75/10.6 GHz LO si...
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