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A SiGe bicmos 9.75/10.6GHz frequency synthesizer for DBS satellite LNB down-converters using half-rate oscillators

A SiGe BiCMOS 9.75/10.6GHz frequency synthesizer for DBS sat...

引用

2006 bipolar/bicmos circuits and technology meeting

作者： Maxim, A. Gheorghe, M. Turinici, C. Integrated Products 8713 Cobblestone Austin TX 78735

ISBN: (纸本)9781424404582;1424404584

A fully-integrated frequency synthesizer for DBS satellite front-ends was realized in a low cost 50GHz fT SiGe bicmos process. Two half-rate VCOs followed by Gilbert frequency doublers generate the 9.75/10.6 GHz LO signals with lower phase noise than a full-rate oscillator. The loop filter was integrated on-chip by using a passive feed-forward architecture that provides a noiseless resistor multiplication. A high PSRR regulator with a VGS/R low noise reference was used to minimize the supply pushing impact on VCO phase noise and spur performance. The synthesizer performance includes: -106dBc/Hz phase noise at 100KHz offset, rms integrated phase noise, 1×1.9mm2 die area and drawing 35mA from a 3.3V supply voltage. © 2006 IEEE.

关键词： Frequency synthesizers

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An integrated 60 GHz receiver front-end in SiGe:C bicmos

An integrated 60 GHz receiver front-end in SiGe:C BiCMOS

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： Sun, YM Herzel, F Wang, L Borngräber, J Winkler, W Kraemer, R IHP Dept Circuit Design Technol Pk 25 D-15236 Frankfurt Germany

ISBN: (纸本)0780394720

This paper presents a fully differential 60 GHz receiver front-end in SiGe:C technology. It comprises a differential LNA and a Gilbert mixer. The measured down-conversion gain is 28 dB. In the 57-64 GHz band the in-band gain ripple is less than I dB, and the output 1-dB compression point is -1.6 dBm. Measured and simulated results agree well over the whole range. The LNA draws 30 mA fro to a 2.2 V supply and the mixer core consumes 6 mA from 3 V supply. The receiver front-end will be part of an integrated WLAN transceiver in the 60 GM band.

关键词： receiver front-end 60 GHz bipolar/bicmos Microwave Monolithic Integrated circuits (MMIC) LNA mixer

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A low-voltage broadband feedforward-linearized BJT mixer

A low-voltage broadband feedforward-linearized BJT mixer

引用

bipolar/bicmos circuits and technology meeting

作者： Lim, Su-Tarn Long, John R. Delft Univ Technol DIMES Elect Res Lab NL-2628 CD Delft Netherlands

A low-voltage, feedforward-linearized bipolar mixer realizes an input IP3 of + 14.3 dBm and an input IP2 of + 54.5 dBm at 2.4 GHz. Conversion (power) gain over the 1-6 GHz RF input range is 12.4 +/- 0.35 dB, while the input IP3 is 13.6 +/- 1.8 dBm over, the same frequency range. The broadband mixer's RF input impedance varies from 60.3-j7.1 at 2.4 GHz to 57.4-jl6.6 Omega at 5.8 GHz. Measured SSB (50 Omega) noise figure is 18.6 dB at 2.4 GHz. No on-chip inductors are used in the design, and the 0.14 mm(2) (active area) mixer dissipates 7.2 mW from a (minimum) 1.2 V supply.

关键词： active mixer bicmos distortion cancellation feedforward linearization SiGe-HBT silicon radio frequency integrated circuits third-order input intercept point (IIP3)

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Substrate Current Injection and Latchup in Complementary Vertical bipolar Processes

Substrate Current Injection and Latchup in Complementary Ver...

引用

bipolar/bicmos circuits and technology meeting

作者： Andy Strachan Advanced Process Technology Development National Semiconductor Corporation Santa Clara CA USA

Challenges and solutions for substrate current injection and latchup phenomena in complementary bicmos technologies are described. The vertical PNP presents specific challenges that differ from CMOS or NPN-only bicmos... 详细信息

ISBN: (纸本)1424404584

关键词： Substrates CMOS technology Low voltage Isolation technology bicmos integrated circuits Batteries Cutoff frequency Crosstalk Testing Analog circuits

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A RF lateral BJT on SOI for realization of RF SOI-bicmos technology

A RF lateral BJT on SOI for realization of RF SOI-BiCMOS tec...

引用

2006 Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： Sun, I.-Shan Michael Ng, Wai Tung Mochizuki, Hidenori Kanekiyo, Koji Kobayashi, Takaaki Toita, Masato Imai, Hisaya Ishikawa, Akira Tamura, Satoru Takasuka, Kaoru Asahi Kasei Microsystems Co. Ltd. Atsugi AXT Maintower Atsugi Kanagawa 243-0021 Japan University of Toronto Dept. of Elec. and Comp. Engineering 10 King's College Rd. Toronto Ont. M5S 3G4 Canada

ISBN: (纸本)0780394720

This work presents a lateral RF BJT built on SOI-CMOS compatible substrate. The primary motivation is to realize a SOI-bicmos technology suitable for low power RF and mixed-signal SoC. This novel LBJT structure relies on a self-aligned polysilicon side-wall-spacer (PSWS) to connect the base contact to the intrinsic base with dimensions in 100 nm range. The fabricated LBJTs exhibit superior Johnson's product (fτ×BVCEO) in the range between 190-300 GHz-V. The fmax of the optimal device reaches 46 GHz at collector current density of only 0.15 mA/μm2. Both figure-of-merits are in-line with advanced SiGe-HBT devices, and superior than previously published data on lateral BJTs. © 2006 IEEE.

关键词： Heterojunction bipolar transistors

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Integrated bicmos 10 GHz S-Parameter Module

Integrated BiCMOS 10 GHz S-Parameter Module

引用

bipolar/bicmos circuits and technology meeting

作者： Jangsup Yoon Robert M. Fox William R. Eisenstadt Department of Electrical and Computer Engineering University of Florida Gainesville FL USA

The paper presents integrated bicmos 10 GHz s-parameter measurement circuits for performing RF/microwave signal gain and phase detection. Potential applications include embedded IC test and production IC test

ISBN: (纸本)1424404584

关键词： bicmos integrated circuits Scattering parameters Application specific integrated circuits Circuit testing Integrated circuit testing Microwave measurements Gain measurement Phase measurement Integrated circuit measurements Performance evaluation

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Demonstration of three-dimensional 35nF/mm2 MIM Capacitor integrated in bicmos circuits

Demonstration of three-dimensional 35nF/mm2 MIM Capacitor in...

引用

bipolar/bicmos circuits and technology meeting

作者： J.c. Giraudin F. Badets J.p. Blanc E. Chataigner A. Bajolet T. Jagueneau C. Rossato P. Delpech STMicroelectronics Crolles France IMEP Grenoble France

This paper summarizes the electrical characterization of MIM capacitor realized in three-dimensional. High density of 35nF/mm 2 is obtained with low leakage current. Its integration in bicmos technology is demonstrat... 详细信息

关键词： MIM capacitors bicmos integrated circuits Electrodes Capacitance Leakage current Dielectric materials Dielectrics and electrical insulation Scanning electron microscopy Integrated circuit technology Mobile handsets

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Lithography for the 32-nm Node and Beyond

Lithography for the 32-nm Node and Beyond

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bipolar/bicmos circuits and technology meeting

作者： J. N. Burghartz M. Irmscher F. Letzkus J. Kretz D. Resnick Institute for Microelectronics Stuttgart Stuttgart Germany Qimonda Dresden GmbH and Company OHG Dresden Germany Molecular Imprints Inc. Austin TX USA

This review article presents, discusses and compares three emerging photo lithography techniques for use in future bicmos fabrication processes: EUV lithography, e-beam direct write, and nano imprint. Specific challen... 详细信息

ISBN: (纸本)1424404584

关键词： Lithography CMOS technology bipolar transistors bicmos integrated circuits Microelectronics Voltage Silicon germanium Germanium silicon alloys Radio frequency Doping profiles

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Turn-On Voltage Control in BSCR and LDMOS-SCR by the Local Blocking Junction Connection

Turn-On Voltage Control in BSCR and LDMOS-SCR by the Local B...

引用

bipolar/bicmos circuits and technology meeting

作者： V.A. Vashchenko P.J. Hopper Semiconductor Drive National Semiconductor Corporation Santa Clara CA USA

ISBN: (纸本)1424404584

The problem of local ESD protection of power arrays is addressed at the device level. A wide voltage range of the pulsed dV/dt turn-on is achieved using a local blocking junction connection. The approach is experimentally validated on both examples of bipolar SCR and NLDMOS-SCR devices and implemented in a 0.5mum 24V bicmos process

关键词： Voltage control Electrostatic discharge Protection Thyristors Electrodes bicmos integrated circuits Clamps Anodes Cathodes Silicon

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High RF performances asymmetric spacer NLDMOS integration in a 0.25μm SiGe:C bicmos technology

High RF performances asymmetric spacer NLDMOS integration in...

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bipolar/bicmos circuits and technology meeting

作者： Bertrand Szelag Dorothee Muller Jocelyne Mourier Caroline Arnaud Halim Bilgen Fabienne Judong Alexandre Giry Denis Pache Agustin Monroy STMicroelectronics Centre Commun de Microélectronique de Crolles Crolles France STMicroelectronics Centre Commun de Microélectronique de Crolles France

An asymmetrical spacer LDMOSFET integrated in a 0.25μm bicmos technology is presented. Improved RF performances are obtained with this new architecture: f T close to 35GHz with BVds larger than 15V. Process integrat... 详细信息

ISBN: (纸本)1424404584

关键词： Radio frequency bicmos integrated circuits Space technology Protection MOSFETs Power amplifiers Radiofrequency amplifiers Low voltage Parasitic capacitance FETs

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