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Above IC RF MEMS and BAW filters: fact or fiction?

Above IC RF MEMS and BAW filters: fact or fiction?

引用

bipolar/bicmos circuits and technology meeting

作者： P. Ancey STMicroelectronics Crolles France

ISBN: (纸本)1424404584

In the above IC integration, components are directly built monolithically upon or within the chip itself. The paper describes the works relative to bulk acoustic wave filter and RF MEMS (micro-switch and electromechanical resonator). The paper demonstrates the feasibility of a fully-integrated RF front-end using above-IC BAW integration technique for W-CDMA applications. A MEMS micro-switch, processed on top of a standard bicmos wafer including the driver, is also reported here. Finally, the paper presents a new low voltage micromechanical resonator based on suspended-gate MOSFET operating at 16 MHz which have a great potential for CMOS co-integrated reference oscillator applications

关键词： Radiofrequency integrated circuits Radiofrequency microelectromechanical systems Resonator filters Microswitches Micromechanical devices Monolithic integrated circuits Acoustic waves Radio frequency Multiaccess communication bicmos integrated circuits

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SiGe bicmos for Analog, High-Speed Digital and Millimetre-Wave Applications Beyond 50 GHz

SiGe BiCMOS for Analog, High-Speed Digital and Millimetre-Wa...

引用

bipolar/bicmos circuits and technology meeting

作者： S.P. Voinigescu T. Chalvatzis K.h.k. Yau A. Hazneci A. Garg S. Shahramian T. Yao M. Gordon T.O. Dickson E. Laskin S.T. Nicolson A.C. Carusone L. Tchoketch-Kebir O. Yuryevich G. Ng B. Lai P. Liu ECE Department University of Toronto Toronto ONT Canada

ISBN: (纸本)1424404584

This paper explores the application of SiGe bicmos technology to mm-wave transceiver with analog and digital signal processing. A review of 10 - 80Gb/s SERDES performance across 3 SiGe bicmos and CMOS technology nodes reveals remarkable similarities with digital CMOS IC scaling and points to the benefits of a SiGe bicmos roadmap. Examples of 40-Gb/s equalizers, track-and-hold amplifiers and ADCs with mm-wave sampling clocks are provided, along with GHz-range opamp filters and 65-GHz wireless transceivers. Automotive radar and imaging applications in the 80 -100 GHz range are also briefly discussed

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits CMOS technology Transceivers Digital signal processing CMOS integrated circuits CMOS digital integrated circuits Equalizers Radar tracking

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MEMS-Based Reconfigurable Multi-band bicmos Power Amplifier

MEMS-Based Reconfigurable Multi-band BiCMOS Power Amplifier

引用

bipolar/bicmos circuits and technology meeting

作者： A.J.M. De Graauw P.G. Steeneken C. Chanlo J. Dijkhuis S. Pramm A. Van Bezooijen H.K.J. ten Dolle F. Van Straten P. Lok Philips Semiconductors Nijmegen The Netherlands Philips Research Laboratories Eindhoven The Netherlands

ISBN: (纸本)1424404584

This paper presents a small dual-band 0.9GHz/1.8GHz inverse class F power amplifier with load-switch functionality using a single bicmos amplifier line-up with a MEMS based reconfigurable matching network. The realized prototype measures 40mm 2 , offers 31dBm with 40% efficiency at 0.9GHz and 30dBm with 34% at 1.8GHz. The load-switch provides up to 10% efficiency improvement at 0.9GHz for reduced power levels

关键词： bicmos integrated circuits Power amplifiers Radio frequency Radiofrequency amplifiers Impedance matching Operational amplifiers Micromechanical devices Prototypes Virtual colonoscopy Voltage

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Experimental Study of Metallic Emitter SiGeC HBTs

Experimental Study of Metallic Emitter SiGeC HBTs

引用

bipolar/bicmos circuits and technology meeting

作者： A. Chantre F. Aniel N. Zerounian D. Dutartre F. Saguin B. Vandelle G. Borot C. Richard M. Proust P. Chevalier L. Rubaldo F. Judong B. Barbalat Institut d'Electronique Fondamentale Orsay France STMicroelectronics Crolles Cedex France

This paper deals with the integration of a metallic emitter in a high-speed SiGe HBT technology. An innovative integration process called PRETCH is detailed, along with static and high-frequency electrical results. Hall Effect measurements down to 20 K on As-doped mono-emitter layers are also reported, which help understand the physics of hole injection in highly doped emitters. The optimization of the process is detailed, and a significant increase of the f T times BV CEO product in metallic emitter SiGe HBTs is finally demonstrated

关键词： Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Hall effect Silicidation Fabrication Variable speed drives Physics Doping profiles bicmos integrated circuits

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Miniaturized Quad-Band Front-End Module for GSM using Si bicmos and passive integration technologies

Miniaturized Quad-Band Front-End Module for GSM using Si BiC...

引用

bipolar/bicmos circuits and technology meeting

作者： A.J.M. de Graauw A. van Bezooijen C. Chanlo A. den Dekker J. Dijkhuis S. Pramm H.K.J. ten Dolle Philips Semiconductors Innovation Center RF Nijmegen The Netherlands

ISBN: (纸本)1424404584

The paper presents a highly miniaturized front end module (FEM) for GSM. The module consists of pure silicon bicmos RF power amplifier (PA) chip, a bicmos die for bias/control functions and a pHEMT switch die, all flipped on a passive integration die, which is mounted on an organic laminate substrate. All passives are integrated. Partitioning of passives is optimized to achieve minimum size (6times6times1 mm 3 ) and low cost at acceptable performance. A power added efficiency (PAE) of 35% is demonstrated in the low band (870 MHz) for an output power of 32 dBm with the second harmonic (H2) below -40 dBm and third harmonic (H3) below -45 dBm

关键词： GSM bicmos integrated circuits Switches Power system harmonics Silicon Radio frequency Power amplifiers Radiofrequency amplifiers PHEMTs Laminates

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High Performances 3D Damascene MIM Capacitors Integrated in Copper Back-End Technologies

High Performances 3D Damascene MIM Capacitors Integrated in ...

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bipolar/bicmos circuits and technology meeting

作者： S. Cremer C. Richard D. Benoit C. Besset J.-p. Manceau A. Farcy C. Perrot N. Segura M. Marin S. Becu S. Boret M. Thomas S. Guillaumet A. Bonnard P. Delpech S. Bruyere STMicroelectronics France L2MP Marseilles France

ISBN: (纸本)1424404584

RF and analog designs require high performances MIM capacitors. In order to continue downscaling of MIM devices, we have developed and integrated a 3D damascene MIM capacitor in the copper back-end of a 0.13 mum bicmos technology. Si 3 N 4 has been used as dielectric to reach excellent performances for a 5 fF/mum 2 capacitance density in term of leakage current, voltage linearity, dielectric relaxation, and reliability. This 3D architecture is a very promising candidate to carry on capacitance density increase.

关键词： MIM capacitors Copper Dielectrics Capacitance Radio frequency MIM devices bicmos integrated circuits Leakage current Voltage Linearity

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High-Performance bicmos Technologies without Epitaxially-Buried Subcollectors and Deep Trenches

High-Performance BiCMOS Technologies without Epitaxially-Bur...

引用

International SiGe technology and Device meeting, ISTDM

作者： B. Heinemann R. Barth D. Knoll H. Rucker B. Tillack W. Winkler IHP Frankfurt Germany

This paper describes the architecture of the bicmos processes highlighting the modular scheme for the integration of the bipolar modules into a common CMOS platform. HBT design issues associated with the implanted col... 详细信息

关键词： bicmos integrated circuits Heterojunction bipolar transistors CMOS technology Implants bipolar transistors CMOS process Fabrication Costs Hip Radio frequency

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Introduction to the 2002 bipolar/bicmos circuits and technology meeting

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IEEE JOURNAL OF SOLID-STATE circuits 2003年第9期38卷 1545-1546页

作者： Fox, RM Univ Florida Dept Elect & Comp Engn Gainesville FL 32611 USA

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Notice of Violation of IEEE Publication Principles: A SiGe bicmos 9.75/10.6GHz Frequency Synthesizer for DBS Satellite LNB Down-Converters Using Half-Rate Oscillators

Notice of Violation of IEEE Publication Principles: A SiGe B...

引用

bipolar/bicmos circuits and technology meeting

作者： A. Maxim M. Gheorghe C. Turinici Integrated Products Austin TX USA

Notice of Violation of IEEE Publication Principles "A SiGe bicmos 9.75/10.6GHz Frequency Synthesizer for DBS Satellite LNB Down-Converters Using Half-Rate Oscillators" by Maxim, A.; Gheorghe, M.; Turinici, C.; in the Proceedings of the IEEE bipolar/bicmos circuits and technology meeting, 2006 After careful and considered review, it has been determined that the above paper is in violation of IEEE's Publication Principles. Specifically, the coauthor names were fabricated by Adrian Maxim and added to the paper. In response to an inquiry on this misconduct, Mr. Maxim acknowledged that the following people who have been listed as co-authors on several of his papers are fabricated names and that he is the only author: C. Turinici, D. Smith, S. Dupue, M. Gheorge, R. Johns, D. Antrik Additionally, in papers by Mr. Maxim that have co-authors other than those listed above, it was discovered in some cases that he had not consulted with them while writing the papers, and submitted papers without their knowledge. Although Mr. Maxim maintains that not all of the data is falsified, IEEE nevertheless cannot assure the integrity of papers posted by him because of his repeated false statements. Due to the nature of this violation, reasonable effort should be made to remove all past references to the above paper, and to refrain from any future references. A fully-integrated frequency synthesizer for DBS satellite front-ends was realized in a low cost 50GHz f T SiGe bicmos process. Two half-rate VCOs followed by Gilbert frequency doublers generate the 9.75/10.6 GHz LO signals with lower phase noise than a full-rate oscillator. The loop filter was integrated on-chip by using a passive feed-forward architecture that provides a noiseless resistor multiplication. A high PSRR regulator with a V GS /R low noise reference was used to minimize the supply pushing impact on VCO phase noise and spur performance. The synthesizer performance includes: -106dBc/Hz phase noise at 100KHz offset, <0.4d

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p-i-n Diodes for Monolithic Millimeter Wave bicmos Applications

p-i-n Diodes for Monolithic Millimeter Wave BiCMOS Applicati...

引用

International SiGe technology and Device meeting, ISTDM

作者： Bradley A. Orner Qizhi Liu Jeffrey Johnson Robert Rassel Xuefeng Liu David Sheridan Alvin Joseph Brian Gaucher IBM Systems and Technology Group 1000 River Road Essex Junction Vermont 05452 IBM Essex Junction VT USA IBM Thomas J. Watson Research Center Yorktown Heights NY USA

An integrated p-i-n diode for use in SiGe bicmos technology applications has been developed. The device may be used into the MMW frequency range

关键词： P-i-n diodes bicmos integrated circuits Anodes Heterojunction bipolar transistors Parasitic capacitance Millimeter wave technology Insertion loss Cathodes Frequency Silicon germanium

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