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p-i-n Diodes for Monolithic Millimeter Wave bicmos Applications

p-i-n Diodes for Monolithic Millimeter Wave BiCMOS Applicati...

引用

International SiGe technology and Device meeting, ISTDM

作者： Bradley A. Orner Qizhi Liu Jeffrey Johnson Robert Rassel Xuefeng Liu David Sheridan Alvin Joseph Brian Gaucher IBM Systems and Technology Group 1000 River Road Essex Junction Vermont 05452 IBM Essex Junction VT USA IBM Thomas J. Watson Research Center Yorktown Heights NY USA

An integrated p-i-n diode for use in SiGe bicmos technology applications has been developed. The device may be used into the MMW frequency range

关键词： P-i-n diodes bicmos integrated circuits Anodes Heterojunction bipolar transistors Parasitic capacitance Millimeter wave technology Insertion loss Cathodes Frequency Silicon germanium

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Discontinuous Innovation: Strained Silicon technology

Discontinuous Innovation: Strained Silicon Technology

引用

International SiGe technology and Device meeting, ISTDM

作者： G.L. Patton IBM Systems and Technology Group Hopewell Junction NY USA

Strained silicon technology has had a dramatic impact on extending the limits of semiconductor technology. Due to the difficulties of both bipolar and CMOS scaling, strained layer technology offers a manufacturability... 详细信息

关键词： Technological innovation Silicon germanium Germanium silicon alloys CMOS technology Heterojunction bipolar transistors bicmos integrated circuits Capacitive sensors Materials science and technology Temperature Isolation technology

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SiGe bicmos Technologies for Improving Sensitivity and High-Speed Characteristics of the Communication LSIs

SiGe BiCMOS Technologies for Improving Sensitivity and High-...

引用

International SiGe technology and Device meeting, ISTDM

作者： M. Miura H. Shimamoto R. Hayami A. Kodama T. Tominari T. Hashimoto K. Washio Kabushiki Kaisha Hitachi Seisakusho Chiyoda-ku Tokyo JP Renesas Northern Japan Semiconductor Inc. Japan Micro Device Division Hitachi and Limited Japan

Two important technologies are exploited in the high-speed SiGe bicmos fabrications based on the inspection of the device physics. The effective reduction of the base resistance is achieved by optimizing profile and configuration of the SiGe HBT. Moreover, the concept of obtaining a narrow base in the bicmos process is established, which enables the ultra-high-speed SiGe bicmos

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits Large scale integration Heterojunction bipolar transistors CMOS technology Impurities Optimized production technology Cutoff frequency CMOS process

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Low power frequency dividers in SiGe:C bicmos technology

Low power frequency dividers in SiGe:C BiCMOS technology

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： Li Wang Yao-Ming Sun J. Borngraeber A. Thiede R. Kraemer IHP GmbH Frankfurt Germany University of Paderborn Paderborn Germany

This paper reports a 71 GHz static and a 103 GHz regenerative dynamic frequency divider fabricated in 0.25 mum SiGe:C HBT technology with f T /f max 200 GHz. The static divider including the buffer works with a 3.5 V single supply voltage and consumes 140 mW with 42 mW for the master-slave flip-flop (FF). The high speed/power ratio makes it attractive for high-frequency wireless communication systems. The dynamic frequency divider operates from 24 GHz to 103 GHz with 5.2 V voltage supply and consumes 195 mW including the buffer with 41 mW for the divider core, and it can be applied at higher frequencies in low power millimeter wave systems

关键词： Frequency conversion bicmos integrated circuits Vehicle dynamics Voltage Millimeter wave communication Millimeter wave technology Millimeter wave radar Heterojunction bipolar transistors Millimeter wave integrated circuits Master-slave

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A 25 GHz quadrature voltage controlled ring oscillator in 0.12/spl mu/m SiGe HBT

A 25 GHz quadrature voltage controlled ring oscillator in 0....

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： R.M. Kodkani L.E. Larson Center for Wireless Communication University of California San Diego CA USA

A 25 GHz ring VCO is fabricated in a 0.12mum SiGe bicmos process. The VCO with a 3.3V supply consumes 32mA. The measured phase noise is -105dBc/Hz at 10MHz offset from the center frequency of 24.3 GHz. Design optimiza... 详细信息

关键词： Voltage-controlled oscillators Voltage control Ring oscillators Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors bicmos integrated circuits Frequency measurement Noise measurement Phase measurement

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Proceedings of the 2003 bipolar/bicmos circuits and technology meeting

Proceedings of the 2003 Bipolar/BiCMOS Circuits and Technolo...

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Proceedings of the 2003 bipolar/bicmos circuits and technology meeting

The proceedings contains 48 papers. Topics discussed include advanced power technology, mixed signal technology options, radio frequency circuit blocks, high speed circuits, substrate effects and modelling, heterojunction bipolar transistor optimization, thermal parameter extraction and electrostatic discharges, emerging technologies, bipolar device physics, radio frequency transceivers, bicmos platforms and noise and high frequency characterization.

关键词： CMOS integrated circuits

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Investigation of Geometry Scaling Effect on Si BJT and SiGe HBT fabricated on SOI Substrates

Investigation of Geometry Scaling Effect on Si BJT and SiGe ...

引用

International SiGe technology and Device meeting, ISTDM

作者： S.H. Liao S.T. Chang C.Y. Lin Department of Physics National Chung Hsing University Taichung Taiwan Department of Electrical Engineering National Chung Hsing University Taichung Taiwan

In this paper, the key design device parameter of SOI such as the buried oxide thickness, lateral scaling, and thermal effect are studied by 2D device simulator DESSIStrade

关键词： Geometry Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Breakdown voltage Physics Radio frequency RF signals bicmos integrated circuits Doping

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A Low-Cost, High-Performance, High-Voltage Complementary bicmos Process

A Low-Cost, High-Performance, High-Voltage Complementary BiC...

引用

International Electron Devices meeting (IEDM)

作者： D. Knoll B. Heinemann K. E. Ehwald A. Fox H. Rucker R. Barth D. Bolze T. Grabolla U. Haak J. Drews B. Kuck S. Marschmeyer H. H. Richter M. Chaimanee O. Fursenko P. Schley B. Tillack K. Kopke Y. Yamamoto H. E. Wulf D. Wolansky Im Technologiepark IHP Frankfurt Germany

The authors demonstrate a low-cost, high-performance, high-voltage complementary SiGe:C bicmos process. This technology offers three npn SiGe:C devices with f T /BV CEO values of 40GHz/5V, 63GHz/3.5V, and 120GHz/2.1V together with a 32GHz f T /35GHz f max / 4.4V pnp SiGe:C HBT by adding only three bipolar masks to the underlying RF-CMOS process. With two additional implant masks, a 150GHz, 2.2V npn HBT and either a 43GHz f T / 65GHz f max 4.2V pnp or a 38GHz f T / 70GHz f max , 5.8V pnp device can be fabricated additionally (in the npn case) or alternatively (pnp case) to the devices of the 3-mask module

关键词： bicmos integrated circuits Heterojunction bipolar transistors CMOS process Implants Radio frequency Costs Fabrication Analog circuits Voltage Silicon germanium

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Effects of Mechanical Uniaxial Stress on SiGe HBT Characteristics

Effects of Mechanical Uniaxial Stress on SiGe HBT Characteri...

引用

International SiGe technology and Device meeting, ISTDM

作者： Tzu-Juei Wang Hung-Wei Chen Chih-Hsin Ko John Yeh Ping-Chun Yeh Shoou-Jinn Chang San-Lein Wu Wen-Chin Lee D.D. Tang Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan Institute of Microelectronics and Department of Electrical Engineering National Cheng Kung University Tainan Taiwan

In this work, we investigate the characteristics of collector current (I C ) and breakdown voltage (BV CEO ) of SiGe HBTs under the mechanical uniaxial stress by a four-point bending apparatus. DeltaI c and DeltaBV CEO is found to be strain-polarity dependent, and there is a trade-off between DeltaI c and DeltaBV CEO at the same stress condition

关键词： Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Tensile stress Compressive stress CMOS technology bicmos integrated circuits Stress control Photonic band gap Microelectronics

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Proceedings of the 2003 bipolar/bicmos circuits and technology meeting (IEEE Cat. No.03CH37440)

Proceedings of the 2003 Bipolar/BiCMOS Circuits and Technolo...

引用

bipolar/bicmos circuits and technology meeting

The following topics are dealt with: advanced power technology, mixed-signal technology options, RF circuit blocks, high speed circuits, substrate effects and modelling, HBT optimization, thermal parameter extraction and ESD, emerging technologies, bipolar device physics, RF transceivers, bicmos platforms; noise and HF characterization.

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