检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

970 篇 会议
134 篇 期刊文献

馆藏范围

1,104 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

660 篇 工学
- 493 篇 电气工程
- 244 篇 电子科学与技术（可...
- 95 篇 计算机科学与技术...
- 86 篇 信息与通信工程
- 85 篇 材料科学与工程（可...
- 29 篇 软件工程
- 16 篇 控制科学与工程
- 14 篇 仪器科学与技术
- 11 篇 化学工程与技术
- 7 篇 冶金工程
- 6 篇 光学工程
- 5 篇 动力工程及工程热...
- 4 篇 建筑学
- 2 篇 力学（可授工学、理...
- 2 篇 轻工技术与工程
- 1 篇 机械工程
- 1 篇 土木工程
- 1 篇 测绘科学与技术
- 1 篇 航空宇航科学与技...
136 篇 理学
- 117 篇 物理学
- 23 篇 数学
- 12 篇 化学
- 4 篇 统计学（可授理学、...
- 1 篇 系统科学
35 篇 管理学
- 34 篇 管理科学与工程(可...
- 6 篇 工商管理
6 篇 经济学
- 6 篇 应用经济学
1 篇 法学
- 1 篇 社会学
1 篇 医学
- 1 篇 临床医学

主题

501 篇 bicmos integrate...
209 篇 silicon germaniu...
168 篇 heterojunction b...
150 篇 cmos technology
137 篇 germanium silico...
100 篇 bipolar transist...
92 篇 radio frequency
86 篇 cmos integrated ...
75 篇 cmos process
59 篇 implants
58 篇 voltage
53 篇 bicmos
48 篇 isolation techno...
40 篇 silicon
38 篇 sige
35 篇 bicmos technolog...
34 篇 power amplifiers
34 篇 mos devices
33 篇 gain
33 篇 capacitance

机构

31 篇 ihp
29 篇 stmicroelectroni...
10 篇 stmicroelect f-3...
10 篇 school of electr...
9 篇 ibm thomas j. wa...
9 篇 imec leuven
9 篇 auburn univ dept...
8 篇 ihp d-15236 fran...
8 篇 texas instrument...
7 篇 philips research...
7 篇 georgia inst tec...
7 篇 ibm corp thomas ...
6 篇 microelectronics...
6 篇 stmicroelectroni...
6 篇 ihp technol pk 2...
6 篇 central research...
6 篇 ibm microelectro...
5 篇 stmicroelectroni...
5 篇 texas tech univ ...
5 篇 nxp semicond res...

作者

22 篇 cressler john d.
21 篇 p. chevalier
20 篇 b. heinemann
19 篇 d. knoll
18 篇 r. barth
17 篇 a. chantre
16 篇 b. tillack
13 篇 h. rucker
13 篇 chevalier p.
13 篇 w. winkler
13 篇 p. schley
12 篇 g. avenier
12 篇 t. yamazaki
11 篇 d. harame
10 篇 s. marschmeyer
10 篇 john d. cressler
10 篇 dai fa foster
10 篇 j. dunn
10 篇 a. fox
10 篇 s. decoutere

语言

1,104 篇 英文

检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

共 1104 条记录，以下是551-560 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

Special Issue on High-Speed circuits: 2002 bipolar/bicmos circuits and technology meeting (BCTM)

引用

IEEE Journal of Solid-State circuits 2003年第9期38卷 3-4页

来源：评论

学校读者我要写书评

暂无评论

On the delay times in vertically scaled SiGeHBTs

On the delay times in vertically scaled SiGeHBTs

引用

bipolar/bicmos circuits and technology meeting

作者： Agarwal, P Hurkx, GAM Donkers, JJTM Slotboom, JW Philips Res Labs B-3001 Louvain Belgium

ISBN: (纸本)0780393090

Delays due to diffusion of minorities are shown to constitute only a small part of the overall delay in vertically scaled devices. Instead, it is shown that charge- 20 storage in the emitter-base space-charge layer is the dominant E 10 delay. This sensitivity of the associated delay on the precise a band-gap structure near the EB junction is discussed.

关键词： heterojunctions bipolar transistors bipolar/bicmos process technology bipolar modeling and simulation device physics

来源：评论

学校读者我要写书评

暂无评论

A fully integrated 60 GHz LNA in SiGe:C bicmos technology

A fully integrated 60 GHz LNA in SiGe:C BiCMOS technology

引用

bipolar/bicmos circuits and technology meeting

作者： Sun, Y Borngräber, J Herzel, F Winkler, W IHP D-15236 Frankfurt Germany

ISBN: (纸本)0780393090

This paper presents a SiGe differential low-noise amplifier (LNA) for the V-band. The measured gain at 60 GHz is 18 dB, and the input return loss is below -15 dB. The 3-dB bandwidth is from 49 GHz to 71 GHz. Measured and simulated S-parameters agree well over the whole range. The LNA draws 30 mA from a 2.2 V supply. It facilitates the design of a fully integrated WLAN receiver in the 57-64 GHz band.

关键词： LNA SiGe : C bipolar/bicmos microwave monolithic integrated circuits (MMIC) 60 GHz differential amplifier

来源：评论

学校读者我要写书评

暂无评论

BSCR ESD protection in 250V process taking into account the turn-off effect

BSCR ESD protection in 250V process taking into account the ...

引用

bipolar/bicmos circuits and technology meeting

作者： Vashchenko, VA Hopper, P Natl Semicond Corp Santa Clara CA 95052 USA

ISBN: (纸本)0780393090

bipolar SCR devices are studied as a potential ESD protection solution in case of a hi-voltage (25OV) process. The problem of the HBM-TLP (Human Body Model Pulse - Transmission Line Pulse) correlation is discussed based on pulsed measurements, ESD characterization and TCAD analysis, and is followed by a suggested new solution, based upon a multi-stage network and engineered to eliminate residual high turn-off voltage.

关键词： silicon bipolar/bicmos process technology ESD SCR snapback breakdown

来源：评论

学校读者我要写书评

暂无评论

High performance, low complexity vertical PNPBJT integrated in a 0.18 μm SiGebicmos technology

High performance, low complexity vertical PNPBJT integrated ...

引用

bipolar/bicmos circuits and technology meeting

作者： Voegeli, BT Gray, PB Rainey, BA Stricker, AD Feilchenfeld, NB Watson, KM St Onge, SA Dunn, JS Schmidt, NT Newton, KM Rascoe, JS IBM Corp Syst & Technol Grp Essex Jct VT 05452 USA

An isolated vertical PNP BJT with f(T) and f(max) of 20GHz available as a modular component in a 0.18 mu m SiGe bicmos technology is described. The VPNP device is fabricated using a low complexity integration scheme a... 详细信息

ISBN: (纸本)0780393090

关键词： CMOS integrated circuits

来源：评论

学校读者我要写书评

暂无评论

QUBiC4plus: A cost-effective bicmos manufacturing technology with elite passive enhancements optimized for 'silicon-based' RF-system-in-package environment

QUBiC4plus: A cost-effective BiCMOS manufacturing technology...

引用

bipolar/bicmos circuits and technology meeting

作者： Deixler, P Letavic, T Mahatdejkul, T Bouttement, Y Brock, R Tan, PC Saikumar, V Rodriguez, A Colclaser, R Kellowan, P Sun, H Bell, N Bower, D Yao, A van Langevelde, R Vanhoucke, T van Noort, WD Hurkx, GAM Crespo, D Biard, C Bardy, S Slotboom, JW Philips RF Device Modeling Grp San Jose CA USA

ISBN: (纸本)0780393090

QUBiC4plus is a RF-bicmos production technology tailored for 'silicon-based' RF-SiP. The device menu includes 3 varactor styles, 7 resistor types, novel complimentary 24V PMU devices, Hi-k MIM capacitors, RC-triggered ESD protection and a choice between all-silicon, SiGe and SiGe:C bipolar transistors. Buried-p+ guardrings, DTI and very-high resistivity substrates ensure excellent circuit-block isolation and high-quality inductors. The advanced design flow features state-of-the-art models.

关键词： bicmos integrated circuits Ge-Si alloys bipolar transistors carbon integrated circuit manufacture integrated circuit modelling radiofrequency integrated circuits system-in-package 24 V bicmos manufacturing technology PMU devices QUBiC4plus RC-triggered E bicmos integrated circuits Radio frequency integrated circuits system-in-package Germanium silicon alloys integrated circuit manufacture bipolar transistors integrated circuit modelling electrostatic discharge protection Manufacturing technology

来源：评论

学校读者我要写书评

暂无评论

A 43-Gb/s full-rate clock transmitter in 0.18-μm SiGebicmos technology

A 43-Gb/s full-rate clock transmitter in 0.18-μm SiGeBiCMOS...

引用

bipolar/bicmos circuits and technology meeting

作者： Meghelli, M IBM Corp Thomas J Watson Res Ctr Yorktown Hts NY 10598 USA

ISBN: (纸本)0780386183

A 43-Gb/s full-rate clock transmitter chip for SONET OC-768 transmission systems is reported. The IC is implemented in a 0.18-mu m SiGe bicmos technology featuring 120 GHz f(T) and 100 GHz f(max) HBTs. It consists of a 4:1 multiplexer, a clock multiplier unit, and a frequency lock detector. The IC features clock jitter generation of 260 fs rms and dissipates 2.3 W from a -3.6-V supply voltage. Measurement results are compared to a previously reported half-rate clock transmitter designed using the same technology.

关键词： clock multiplier unit SiGe bipolar technology 4 : 1 multiplexer

来源：评论

学校读者我要写书评

暂无评论

Identification and analysis of a new BJT parametric mismatch phenomenon

Identification and analysis of a new BJT parametric mismatch...

引用

bipolar/bicmos circuits and technology meeting

作者： Wils, N Tuinhout, H Ewert, T van Berkum, J Kaiser, M Weemaes, R Philips Res Device Modelling Grp Eindhoven Netherlands

ISBN: (纸本)0780393090

In this paper we show that discrepancies that were occasionally observed in the base current mismatch area scaling of a 0.25 mu m bicmos technology are due to a new mismatch phenomenon. We discuss how the cause of the effect was identified through electrical and TEM device analysis. These analyses helped to spot and solve a potential yield limiter in the technology.

关键词： silicon bipolar/bicmos process technology device physics analogue circuits matching

来源：评论

学校读者我要写书评

暂无评论

A bicmos upconverter with 1.9 GHz multiband frequency synthesizer for DVB-RCT application

A BiCMOS upconverter with 1.9 GHz multiband frequency synthe...

引用

bipolar/bicmos circuits and technology meeting

作者： de Foucauld, E Billiot, G Mounet, C CEA LETI F-38054 Grenoble 9 France

ISBN: (纸本)0780393090

In this paper, we present an integrated upconversion stage including an integer-N synthesizer in a 0.35 mu m bicmos process. This chip is, to our knowledge, the first integrated circuit for a DVB-RCT application ever published. This standard requires 125 KHz frequency steps in the UHF band and an architecture is proposed to upconvert the 44 MHz IF signal. The realization of a converter stage, composed of a mixer and a synthesizer, based on a multiband VCO (Voltage Controlled Oscillator), is also described. The mixer converts frequencies from 10801092 MHz to the UHF band (470-860 MHz). The synthesizer includes a programmable divider, with a dual modulus prescaler, and a multiband LC-VCO, which allows a frequency range of 1550-1952 MHz. A single side band phase noise of -84 dBc/Hz at 10 KHz offset and -122 dBc/Hz at I MHz offset have been measured at the synthesizer output. A power conversion gain of 7 dB and a noise figure of 14.9 dB characterize the mixer.

关键词： frequency synthesizers MMIC frequency converters mixers phase noise voltage controlled oscillators

来源：评论

学校读者我要写书评

暂无评论

300 GHz f_max self-aligned SiGeCHBT optimized towards CMOS compabitility

300 GHz <i>f</i><sub>max</sub> self-aligned SiGeCHBT optimiz...

引用

bipolar/bicmos circuits and technology meeting

作者： Chevalier, P Barbalat, B Rubaldo, L Vandelle, B Dutartre, D Bouillon, P Jagueneau, T Richard, C Saguin, F Margain, A Chantre, A STMicroelectronics F-38926 Crolles France

This paper summarizes the work carried out to improve performances of a SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. A 300 GHz f(max) is reported for a transistor sustai... 详细信息

ISBN: (纸本)0780393090

关键词： bicmos integrated circuits technology heterojunction bipolar transistors millimeter wave circuits optical communication silicon germanium

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共111页 << < 52 53 54 55 56 57 58 59 60 61 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：