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bipolar/bicmos circuits and technology meeting

作者： Avenier, G Schwartzmann, T Chevalier, P Vandelle, B Rubaldo, L Dutartre, D Boissonnet, L Saguin, F Pantel, R Frégonèse, S Maneux, C Zimmer, T Chantre, A STMicroelectronics F-38926 Crolles France

We demonstrate a 4-mask HBT module, which enables the integration of three high performance self-aligned SiGeC HBTs into a 0.13 mu m SOI CMOS technology. Static and dynamic transistor characteristics are described and... 详细信息

ISBN: (纸本)0780393090

关键词： silicon-germanium bipolar transistors bicmos technology silicon-on-insulator technology

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230-GHz self-aligned SiGeCHBT for optical and millimeter-wave applications

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IEEE JOURNAL OF SOLID-STATE circuits 2005年第10期40卷 2025-2034页

作者： Chevalier, P Fellous, C Rubaldo, L Pourchon, F Pruvost, S Beerkens, R Saguin, F Zerounian, N Barbalat, B Lepilliet, S Dutartre, D Céli, D Telliez, I Gloria, D Aniel, F Danneville, F Chantre, A STMicroelect F-38926 Crolles France USTL IEMN DHS CNRSUMR 8520 F-59652 Villeneuve Dascq France STMicroelect Ottawa ON K2H 8R6 Canada Univ Paris Sud 11 IEF F-91405 Orsay France

This paper describes a 230-GHz self-aligned SiGeC heterojunction bipolar transistor developed for a 90-mn bicmos technology. The technical choices such as the selective epitaxial growth of the base and the use of an arsenic-doped monocrystalline emitter are presented and discussed with respect to bicmos performance objectives and integration constraints. DC and high-frequency device performances at room and cryogenic temperatures are given. HICUM model agreement with the measurements is also discussed. Finally, building blocks with state-of-the-art performances for a CMOS compatible technology are presented: A ring oscillator with a minimum stage delay of 4.4 ps and a 40-GHz low-noise amplifier with a noise figure of 3.9 dB and an associated gain of 9.2 dB were fabricated.

关键词： bicmos integrated circuits heterojunction bipolar transistors millimeter-wave circuits optical communication

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A 43-Gb/s full-rate clock transmitter in 0.18-μm SiGebicmos technology

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IEEE JOURNAL OF SOLID-STATE circuits 2005年第10期40卷 2046-2050页

作者： Meghelli, M IBM Corp Thomas J Watson Res Ctr Yorktown Hts NY 10598 USA

A 43-Gb/s full-rate clock transmitter chip for SONET OC-768 transmission systems is reported. The IC is implemented in a 0.18-mu m SiGe bicmos technology featuring 120 GHz f(T) and 100 GHz f(max) HBTs. It consists of a 4:1 multiplexer, a clock multiplier unit, and a frequency lock detector. The IC features clock jitter generation of 260 fs rms and dissipates 2.3 W from a -3.6-V supply voltage. Measurement results are compared to a previously reported half-rate clock transmitter designed using the same technology.

关键词： clock multiplier unit SiGe bipolar technology 4 : 1 multiplexer

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A 12 GHz SiGe bicmos limiting amplifier with wide dynamic range peak detect circuitry for use in 10GBit optical systems

A 12 GHz SiGe BiCMOS limiting amplifier with wide dynamic ra...

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2005 IEEE bipolar/bicmos circuits and technology meeting, BCTM

作者： Fratti, Roger A. Moinian, Shahriar A. Agere Systems Inc. Allentown PA

A SiGe limiting amplifier with 30dB gain, 16dB input return loss, 2mV sensitivity and integrated peak detect circuitry has been designed. The process used was a .13 micron bicmos graded base HBT technology. Peak detect circuitry was implemented at the input to the limiting amplifier to maximize dynamic range as opposed to conventional peak detect circuits that follow high gain stages. © 2005 IEEE.

关键词： Silicon compounds

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A 100dB+SFDR 80MSPS 14 bit 0.35um bicmos pipeline ADC

A 100dB+SFDR 80MSPS 14 bit 0.35um BiCMOS pipeline ADC

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bipolar/bicmos circuits and technology meeting

作者： Bardsley, S Dillon, C Kummaraguntla, R Lane, C Ali, A Rigsbee, B Combs, D Analog Devices Inc High Speed Converter Grp Greensboro NC USA

ISBN: (纸本)0780393090

The cellular infrastructure market requires high clock rate, high dynamic range ADCs to enable efficient, advanced architecture receive channels. This paper describes a 14 bit 80MSPS ADC with 100dB+ SFDR at baseband in 0.35um bicmos technology using 1.1 watts on a 3.3V/5.0V dual supply. Some challenges associated with high spurious free dynamic range at high clock rates will be discussed along with methods used in this ADC to overcome these barriers.

关键词： bicmos ADC analog to digital converter SFDR high speed ADC MDAC comparator SHAless boot strap

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A low-cost SiGe:C bicmos technology with embedded flash memory and complementary LDMOS module

A low-cost SiGe:C BiCMOS technology with embedded flash memo...

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2005 IEEE bipolar/bicmos circuits and technology meeting, BCTM

作者： Knoll, D. Fox, A. Ehwald, K.E. Heinemann, B. Barth, R. Fischer, A. Rücker, H. Schley, P. Scholz, R. Korndörfer, F. Senapati, B. Stikanov, V.E. Tillack, B. Winkler, W. Wolf, Ch. Zaumseil, P. Germany Kiev Polytechnical Institute CAD Department Kiev Ukraine

We present a low-cost, modular bicmos process for wireless and mixed-signal applications. A SiGe:C bipolar module, a complementary LDMOS module, and a low-power flash memory were combined with a 0.25μm CMOS technology to enable SoC integration. The low-cost approach is demonstrated by the fact that only 29 mask steps are applied in total for the full process flow including all modules, a full suite of passives, and 5 metal layers. ©2005 IEEE.

关键词： CMOS integrated circuits

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230-GHz self-aligned SiGeCHBT for optical and millimeter-wave applications

230-GHz self-aligned SiGeCHBT for optical and millimeter-wav...

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bipolar/bicmos circuits and technology meeting

关键词： bicmos integrated circuits heterojunction bipolar transistors millimeter-wave circuits optical communication

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A 10Gb/s injection-locked clock recovery circuit in 47GHz fT SiGe bicmos

A 10Gb/s injection-locked clock recovery circuit in 47GHz fT...

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2005 IEEE bipolar/bicmos circuits and technology meeting, BCTM

作者： Zhan, Jing-Hong Conan Duster, Jon Kornegay, Kevin Cornell Broadband Communications Research Laboratory

An injection-locked clock recovery (CR) unit capable of extracting the clock from random binary sequences is presented. At 2.3V, the clock recovery circuit consumes only 14.3mW and correctly recovers a 10.3GHz clock f... 详细信息

关键词： Silicon compounds

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Characteristics of SiGe device fabricated by SiGe bicmos technology and its application to a 5.8 GHz MMIC down-conversion mixer

Characteristics of SiGe device fabricated by SiGe BiCMOS tec...

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2005 IEEE bipolar/bicmos circuits and technology meeting, BCTM

作者： Lee, Sang-Heung Lee, Ja-Yol Kim, Sang-Hoon Bae, Hyun-Cheol Lee, Seung-Yun Kim, Bo Woo Kang, Jin-Yeong 161 Gajeong-dong Yuseong-gu Daejeon 305-350 Korea Republic of

In this paper, a 5.8 GHz MMIC down-conversion mixers are designed and fabricated on chip using SiGe bicmos process technology. To fabricate a SiGe HBT, we use a RPCVD system to grow a base epitaxial layer, and have adopted LOCOS isolation to separate the device and device terminals. This mixer is integrated on chip with RF/LO matching circuits, RF/LO input balun circuits, and IF output balun circuit. The measured results of the fabricated mixer show conversion gain of 5.5 dB, LO to RF isolation of 44 dB, and LO to IF isolation of 40 dB, IIP3 of 1.8 dBm. The chip size of the fabricated mixer is 1.9 mm × 1.2 mm. © 2005 IEEE.

关键词： Silicon compounds

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A 40GHz superheterodyne receiver integrated in 1.13μm bicmos SiGe:C HBT technology

A 40GHz superheterodyne receiver integrated in 1.13μm BiCMO...

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2005 IEEE bipolar/bicmos circuits and technology meeting, BCTM

作者： Pruvost, S. Telliez, I. Danneville, F. Dambrine, G. Laurens, M. STMicroelectronics FTM-CCDS 850 rue Jean Monnet F-38926 Crolles Cedex France IEMN UMR CNRS 8520 USTL 1 Av Poincaré 59652 Villeneuve d'Ascq France

This paper presents a superheterodyne down-converter realized using SiGe:C bicmos HBT. Based on a single-ended architecture, the Low Noise Amplifier (LNA), the fundamental oscillator and the mixer were first characterized separately and finally the down-converter. The down-converter exhibits conversion gain of 13 dB and NFDSB of 7 dB, and the associated oscillator performs phase noise of - 90 dBc/Hz at 1 MHz from the 40 GHz carrier frequency. ©2005 IEEE.

关键词： Signal receivers

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