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On the optimization of lateral pnp BJTs found in bicmos process technologies

On the optimization of lateral pnp BJTs found in BiCMOS proc...

引用

2005 IEEE bipolar/bicmos circuits and technology meeting, BCTM

作者： Zhao, Enhai El-Diwany, Monir Cressler, John D. Shibley, James Sadovnikov', Alexei Kocoski, Dimitar Krakowski, Tracey L. School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Drive N.W. Atlanta GA 30332-0250 United States National Semiconductor Corp. Santa Clara CA 94085 United States

We present a comprehensive investigation aimed at optimizing the performance of lateral pnp BJTs found in bicmos technologies to a level suitable for analog, IF/RF circuit applications. Alternative base profiles, LDD implantations conditions, and device geometries are quantitatively assessed, as well as the path of adapting low-voltage (LV) pMOS vs. high-voltage (HV) pMOS device design points for viable lateral pnp BJTs. The resultant dc, ac and low-frequency noise characteristics are addressed. © 2005 IEEE.

关键词： CMOS integrated circuits

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Applications focused trends in SiGe bicmos technologies

Applications focused trends in SiGe BiCMOS technologies

引用

207th ECS meeting

作者： Onge, S.St. Joseph, A. Lanzerotti, L. Feilchenfeld, N. Coolbaugh, D. Orner, B. Dunn, J. Harame, D. IBM Systems and Technology Group 1000 River Road Essex Junction VT 05452

Silicon Germanium (SiGe) Heterojunction bipolar Transistor (HBT) bicmos technology has become a major player in the fast growing communication sector of the semiconductor market. The technology's combination of compound semiconductor like performance integrated with industry standard CMOS logic and high performance passives make it the technology of choice for a broad range of applications ranging from 0.9 to 77 GHz. The expansion of this application range has been due in part to the well documented and impressive increases in SiGe HBT performance. There have also been less publicized advances in SiGe bicmos technologies with a focus on optimization and cost reduction for a specific subset of applications. Here we present and compare those two trends in SiGe bicmos technologies.

关键词： CMOS integrated circuits

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Proceedings of the 2005 Biopolar/bicmos circuits and technology (IEEE Cat. No. 05CH37709)

Proceedings of the 2005 Biopolar/BiCMOS Circuits and Technol...

引用

bipolar/bicmos circuits and technology meeting

The following topics are dealt with: wireless communication systems; innovative process technology; BJT reliability physics; statistical and breakdown modeling; power device technology; wireless circuits and building blocks; RF power amplifiers; bipolar/bicmos technology integration; analog-digital converters; semiconductor device modeling; high frequency front-end circuits; analog devices; RF devices; RF circuit blocks; advanced SiGe HBT; and RF power.

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A 12 GHz SiGe bicmos limiting amplifier with wide dynamic range peak detect circuitry for use in 10GBit optical systems

A 12 GHz SiGe BiCMOS limiting amplifier with wide dynamic ra...

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bipolar/bicmos circuits and technology meeting

作者： R.A. Fratti S.A. Moinian Agere Systems Inc. Allentown PA USA

A SiGe limiting amplifier with 30dB gain, 16dB input return loss, 2mV sensitivity and integrated peak detect circuitry has been designed. The process used was a 0.13 micron bicmos graded base HBT technology. Peak detect circuitry was implemented at the input to the limiting amplifier to maximize dynamic range as opposed to conventional peak detect circuits that follow high gain stages.

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits Semiconductor optical amplifiers Optical amplifiers Dynamic range Stimulated emission Optical sensors Optical losses Heterojunction bipolar transistors

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A low-cost SiGe:C bicmos technology with embedded flash memory and complementary LDMOS module

A low-cost SiGe:C BiCMOS technology with embedded flash memo...

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bipolar/bicmos circuits and technology meeting

作者： D. Knoll A. Fox K.E. Ehwald B. Heinemann R. Barth A. Fischer H. Rucker P. Schley R. Scholz F. Korndorfer B. Senapati V.E. Stikanov B. Tillack W. Winkler Ch. Wolf P. Zaumseil IHP Frankfurt Germany CAD Department Kiev Polytechnic Institute Kiev Ukraine

We present a low-cost, modular bicmos process for wireless and mixed-signal applications. A SiGe:C bipolar module, a complementary LDMOS module, and a low-power flash memory were combined with a 0.25/spl mu/m CMOS technology to enable SoC integration. The low-cost approach is demonstrated by the fact that only 29 mask steps are applied in total for the full process flow including all modules, a full suite of passives, and 5 metal layers.

关键词： bicmos integrated circuits Flash memory Heterojunction bipolar transistors CMOS technology Nonvolatile memory System-on-a-chip Integrated circuit technology Schottky diodes Implants CMOS memory circuits

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Improved vertical PNP collector-base breakdown using 2D Monte-Carlo TCAD simulations

Improved vertical PNP collector-base breakdown using 2D Mont...

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bipolar/bicmos circuits and technology meeting

作者： A.D. Stricker B.T. Voegeli N.B. Feilchenfeld B.A. Rainey M.L. Gautsch Essex Junction IBM Systems and Technology Group Technology Development and Alliances VT USA

Using TCAD simulations the collector-base break down voltage (BVcbo) of a vertical PNP transistor implemented in IBM's 0.18 /spl mu/m bicmos SiGe 7WL technology was optimized. A novel two dimensional (2D) ion implant scattering phenomenon at the edge of the collector mask was isolated and characterized. TCAD simulations helped to identify the problem, and find the optimal design point for its solution, which then was confirmed by measurements on hardware.

关键词： Electric breakdown Silicon germanium Germanium silicon alloys Scattering Implants bicmos integrated circuits bipolar transistors Heterojunction bipolar transistors Semiconductor process modeling Impurities

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A self-aligned vertical HBT for thin SOI SiGeC bicmos

A self-aligned vertical HBT for thin SOI SiGeC BiCMOS

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bipolar/bicmos circuits and technology meeting

作者： G. Avenier T. Schwartzmann P. Chevalier B. Vandelle L. Rubaldo D. Dutartre L. Boissonnet F. Saguin R. Pantel S. Fregonese C. Maneux T. Zimmer A. Chantre STMicroelectronics Crolles France Laboratoire de Microélectronique IXL CNRS UMR 5818 Talence France

We demonstrate a 4-mask HBT module, which enables the integration of three high performance self-aligned SiGeC HBTs into a 0.13/spl mu/m SOI CMOS technology. Static and dynamic transistor characteristics are described... 详细信息

关键词： Heterojunction bipolar transistors bicmos integrated circuits CMOS technology Radio frequency Silicon on insulator technology Isolation technology Substrates CMOS process Radiofrequency identification Germanium silicon alloys

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A 40GHz superheterodyne receiver integrated in 0.13/spl mu/m bicmos SiGe:C HBT technology

A 40GHz superheterodyne receiver integrated in 0.13/spl mu/m...

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bipolar/bicmos circuits and technology meeting

作者： S. Pruvost I. Telliez F. Danneville G. Dambrine M. Laurens IEMN UMR CNRS 8520 DHS USTL Villeneuve d'Ascq France STMicroelectronics FTM-CCDS Crolles France

This paper presents a superheterodyne down-converter realized using SiGe:C bicmos HBT. Based on a single-ended architecture, the low noise amplifier (LNA), the fundamental oscillator and the mixer were first characterized separately and finally the down-converter. The down-converter exhibits conversion gain of 13 dB and NF/sub DSB/ of 7 dB, and the associated oscillator performs phase noise of -90 dBc/Hz at 1 MHz from the 40 GHz carrier frequency.

关键词： bicmos integrated circuits Heterojunction bipolar transistors Oscillators Performance gain Cutoff frequency Low-noise amplifiers Circuit topology Circuit simulation Millimeter wave technology Mixers

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Identification and analysis of a new BJT parametric mismatch phenomenon

Identification and analysis of a new BJT parametric mismatch...

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bipolar/bicmos circuits and technology meeting

作者： N. Wils H. Tuinhout T. Ewert J. van Berkum M. Kaiser R. Weemaes Device modelling Group Philips Research Eindhoven Netherlands The Angstrom Laboratory University of Uppsala Sweden Material Analysis Department Philips Research Eindhoven Netherlands

In this paper we show that discrepancies that were occasionally observed in the base current mismatch area scaling of a 0.25 /spl mu/m bicmos technology are due to a new mismatch phenomenon. We discuss how the cause of the effect was identified through electrical and TEM device analysis. These analyses helped to spot and solve a potential yield limiter in the technology.

关键词： Geometry Fluctuations bicmos integrated circuits Current measurement Laboratories Cause effect analysis Silicon Physics Transmission electron microscopy Area measurement

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High performance, low complexity vertical PNP BJT integrated in a 0.18/spl mu/m SiGe bicmos technology

High performance, low complexity vertical PNP BJT integrated...

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bipolar/bicmos circuits and technology meeting

作者： B.T. Voegeli P.B. Gray B.A. Rainey A.D. Strieker N.B. Feilchenfeld K.M. Watson S.A. St Onge J.S. Dunn N.T. Schmidt K.M. Newton J.S. Rascoe IBM Systems and Technology Group Essex Junction VT USA International Business Machines Corp Armonk NY US IBM Syst. & Technol. Group Essex Junction VT USA

An isolated vertical PNP BJT with f/sub T/ and f/sub MAX/ of 20GHz available as a modular component in a 0.18/spl mu/m SiGe bicmos technology is described. The VPNP device is fabricated using a low complexity integrat... 详细信息

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits Heterojunction bipolar transistors CMOS technology Isolation technology CMOS process Integrated circuit technology Resistors Thin film inductors

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