检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

970 篇 会议
134 篇 期刊文献

馆藏范围

1,104 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

660 篇 工学
- 493 篇 电气工程
- 244 篇 电子科学与技术（可...
- 95 篇 计算机科学与技术...
- 86 篇 信息与通信工程
- 85 篇 材料科学与工程（可...
- 29 篇 软件工程
- 16 篇 控制科学与工程
- 14 篇 仪器科学与技术
- 11 篇 化学工程与技术
- 7 篇 冶金工程
- 6 篇 光学工程
- 5 篇 动力工程及工程热...
- 4 篇 建筑学
- 2 篇 力学（可授工学、理...
- 2 篇 轻工技术与工程
- 1 篇 机械工程
- 1 篇 土木工程
- 1 篇 测绘科学与技术
- 1 篇 航空宇航科学与技...
136 篇 理学
- 117 篇 物理学
- 23 篇 数学
- 12 篇 化学
- 4 篇 统计学（可授理学、...
- 1 篇 系统科学
35 篇 管理学
- 34 篇 管理科学与工程(可...
- 6 篇 工商管理
6 篇 经济学
- 6 篇 应用经济学
1 篇 法学
- 1 篇 社会学
1 篇 医学
- 1 篇 临床医学

主题

501 篇 bicmos integrate...
209 篇 silicon germaniu...
168 篇 heterojunction b...
150 篇 cmos technology
137 篇 germanium silico...
100 篇 bipolar transist...
92 篇 radio frequency
86 篇 cmos integrated ...
75 篇 cmos process
59 篇 implants
58 篇 voltage
53 篇 bicmos
48 篇 isolation techno...
40 篇 silicon
38 篇 sige
35 篇 bicmos technolog...
34 篇 power amplifiers
34 篇 mos devices
33 篇 gain
33 篇 capacitance

机构

31 篇 ihp
29 篇 stmicroelectroni...
10 篇 stmicroelect f-3...
10 篇 school of electr...
9 篇 ibm thomas j. wa...
9 篇 imec leuven
9 篇 auburn univ dept...
8 篇 ihp d-15236 fran...
8 篇 texas instrument...
7 篇 philips research...
7 篇 georgia inst tec...
7 篇 ibm corp thomas ...
6 篇 microelectronics...
6 篇 stmicroelectroni...
6 篇 ihp technol pk 2...
6 篇 central research...
6 篇 ibm microelectro...
5 篇 stmicroelectroni...
5 篇 texas tech univ ...
5 篇 nxp semicond res...

作者

22 篇 cressler john d.
21 篇 p. chevalier
20 篇 b. heinemann
19 篇 d. knoll
18 篇 r. barth
17 篇 a. chantre
16 篇 b. tillack
13 篇 h. rucker
13 篇 chevalier p.
13 篇 w. winkler
13 篇 p. schley
12 篇 g. avenier
12 篇 t. yamazaki
11 篇 d. harame
10 篇 s. marschmeyer
10 篇 john d. cressler
10 篇 dai fa foster
10 篇 j. dunn
10 篇 a. fox
10 篇 s. decoutere

语言

1,104 篇 英文

检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

共 1104 条记录，以下是591-600 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

A 7-bit, 18 GHz SiGe HBT comparator for medium resolution A/D conversion

A 7-bit, 18 GHz SiGe HBT comparator for medium resolution A/...

引用

bipolar/bicmos circuits and technology meeting

作者： Xiangtao Li Wei-Min Lance Kuo Yuan Lu R. Krithivasan Tianbing Chen J.D. Cressler A.J. Joseph Georgia Institute of Technology School of Electrical and Computer Engineering Atlanta GA USA IBM Microelectronics Junction VT USA

ISBN: (纸本)0780393094;0780393090

An ultra-high-speed, master-slave comparator using an ECL configuration is presented. Implemented in a commercially-available 0.18 /spl mu/m 120 GHz SiGe HBT bicmos technology, the comparator core occupies a compact area of only 140 /spl times/ 325 /spl mu/m/sup 2/. Operating off a 3.5 V power supply, the comparator consumes 82 mW, excluding clock and output buffers. The comparator can operate at an 18 GHz sampling rate with 7.1 bits of resolution, and at a 20 GHz sampling rate with 4.9 bits of resolution. To our knowledge, this comparator achieves the highest resolution when compared to other stand-alone comparators in the literature operating at similar sampling rates.

关键词： Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Sampling methods Space technology Latches Master-slave CMOS technology bicmos integrated circuits Power supplies

来源：评论

学校读者我要写书评

暂无评论

A bicmos upconverter with 1.9 GHz multiband frequency synthesizer for DVB-RCT application

A BiCMOS upconverter with 1.9 GHz multiband frequency synthe...

引用

bipolar/bicmos circuits and technology meeting

作者： E. de Foucauld G. Billiot C. Mounet CEA-LETI Grenoble France

In this paper, we present an integrated upconversion stage including an integer-N synthesizer in a 0.35 /spl mu/m bicmos process. This chip is, to our knowledge, the first integrated circuit for a DVB-RCT application ever published. This standard requires 125 kHz frequency steps in the UHF band and an architecture is proposed to upconvert the 44 MHz IF signal. The realization of a converter stage, composed of a mixer and a synthesizer, based on a multiband VCO (voltage controlled oscillator), is also described. The mixer converts frequencies from 1080-1092 MHz to the UHF band (470-860 MHz). The synthesizer includes a programmable divider, with a dual modulus prescaler, and a multiband LC-VCO, which allows a frequency range of 1550-1952 MHz. A single side band phase noise of -84 dBc/Hz at 10 kHz offset and -122 dBc/Hz at 1 MHz offset have been measured at the synthesizer output. A power conversion gain of 7 dB and a noise figure of 14.9 dB characterize the mixer.

关键词： bicmos integrated circuits Frequency synthesizers Digital video broadcasting Mixers Voltage-controlled oscillators Frequency conversion Application specific integrated circuits Phase noise Noise measurement Phase measurement

来源：评论

学校读者我要写书评

暂无评论

QUBiC4plus: a cost-effective bicmos manufacturing technology with elite passive enhancements optimized for 'silicon-based' RF-system-in-package environment

QUBiC4plus: a cost-effective BiCMOS manufacturing technology...

引用

bipolar/bicmos circuits and technology meeting

作者： P. Deixler T. Letavic T. Mahatdejkul Y. Bouttement R. Brock P.C. Tan V. Saikumar A. Rodriguez R. Colclaser P. Kellowan H. Sun N. Bell D. Bower A. Yao R. van Langevelde T. Vanhoucke W.D. van Noort G.A.M. Hurkx D. Crespo C. Biard S. Bardy J.W. Slotboom Philips Semiconductors Hopewell Junction NY USA Philips RF Device Modeling Group San Jose USA Philips RF Design Support Caen France & Nijmegen Netherlands Philips Natlab Eindhoven The Netherlands Philips Research Leuven Leuven Belgium IC-RF Caen France

QUBiC4plus is a RF-bicmos production technology tailored for 'silicon-based' RF-SiP. The device menu includes 3 varactor styles, 7 resistor types, novel complimentary 24 V PMU devices, hi-k MIM capacitors, RC-triggered ESD protection and a choice between all-silicon, SiGe and SiGe:C bipolar transistors. Buried-p+ guardrings, DTI and very-high resistivity substrates ensure excellent circuit-block isolation and high-quality inductors. The advanced design flow features state-of-the-art models.

关键词： bicmos integrated circuits Manufacturing Optimized production technology Isolation technology Varactors Resistors Phasor measurement units MIM capacitors Electrostatic discharge Protection

来源：评论

学校读者我要写书评

暂无评论

Integrated differential 2 GHz 2.7V low-noise active bandpass filters on silicon

Integrated differential 2 GHz 2.7V low-noise active bandpass...

引用

IEEE Symposium on Radio Frequency Integrated circuits (RFIC)

作者： Z. Sassi S. Darfeuille B. Barelaud L. Billonnet B. Jarry H. Marie Nguyen Tran Luan Le P. Gamand IRCOM University of Limoges Limoges France Innovation Centre RF Philips Semiconductors Caen France

Silicon technology in CMOS and bicmos processes are now showing very interesting intrinsic characteristics. Two 2-GHz 2.7 V differential filter topologies are designed and analyzed in this paper. The first circuit is a filter based on an LC-Q enhanced topology, consuming less than 6.1 mA. It shows at the center frequency a 20-dB power transmission gain, a noise figure of 4.2 dB, a -35 dBm 1-dB input referred compression point and a -3 dB bandwidth of 50 MHz. The second circuit is a fourth-order bandpass filter developed and realized using four inductors electrically coupled with MOSFETs consuming 5.5 mA/pole. With a bandwidth of 43 MHz, a transmission gain of 34 dB and a noise figure of 4.4 dB at 2.05 GHz center frequency. Varactor diodes are used for frequency tuning. An amplifier is cascaded at the input for noise and impedance matching. Philips QUBIC4 Si bicmos technology is used (D. Szmyd et al., Proc. 2001 bipolar/bicmos circuits Tech. meeting, pp. 60-63, 2001).

关键词： Band pass filters Silicon bicmos integrated circuits Frequency CMOS technology Circuit topology Noise figure Bandwidth Integrated circuit technology CMOS process

来源：评论

学校读者我要写书评

暂无评论

Low-cost self-aligned SiGeC HBT module for high-performance bulk and SOI RFCMOS platforms

Low-cost self-aligned SiGeC HBT module for high-performance ...

引用

International Electron Devices meeting (IEDM)

作者： P. Chevalier D. Lagarde G. Avenier T. Schwartzmann B. Barbalat D. Lenoble J. Bustos F. Pourchon F. Saguin B. Vandelle L. Rubaldo A. Chantre STMicroelectronics Private Limited Crolles France

A low-cost SiGeC HBT module for bulk and SOI RFCMOS platforms is described. The device features an all-implanted collector and a novel fragmented emitter layout, and requires 4 masks only. Record performances are demonstrated, with cut-off frequencies f T /f max as large as 230/240GHz and 140/200GHz on bulk and thin SOI substrates respectively

关键词： Heterojunction bipolar transistors CMOS technology Substrates Radio frequency Silicon carbide Cutoff frequency Epitaxial growth CMOS process System-on-a-chip bicmos integrated circuits

来源：评论

学校读者我要写书评

暂无评论

Proceedings of the 2002 bipolar/bicmos circuits and technology meeting

Proceedings of the 2002 bipolar/BiCMOS circuits and technolo...

引用

2002 IEEE Biopolar/bicmos and technology meeting

The proceedings contain 49 papers from the conference on bipolar/bicmos circuits and technology meeting. The topics discussed include: substrate options and add-on process modules for monolithic RF silicon technology;analytical formulation and electrical measurements of self-heating in silicon BJT's;a simulation study of thin SOI bipolar transistors with fully or partially depleted collector.

关键词： Heterojunction bipolar transistors

来源：评论

学校读者我要写书评

暂无评论

Special Issue on High-Speed circuits: 2001 GaAs IC Symposium and 2001 bipolar/bicmos circuits and technology meeting (BCTM)

Special Issue on High-Speed Circuits: 2001 GaAs IC Symposium...

引用

23rd IEEE GaAs IC Symposium

This Volume 37 of the conference proceedings contains 15 papers. Topics discussed include high speed circuits, amplifiers, synthesizers, optical communication circuits, bipolar transistors and lightwave transceivers.

关键词： Integrated circuits

来源：评论

学校读者我要写书评

暂无评论

Proceedings of the 2002 bipolar/bicmos circuits and technology meeting (Cat. No.02CH37384)

Proceedings of the 2002 Bipolar/BiCMOS Circuits and Technolo...

引用

bipolar/bicmos circuits and technology meeting

Presents the front cover of the proceedings record.

关键词：

来源：评论

学校读者我要写书评

暂无评论

230 GHz self-aligned SiGeCHBT for 90 nm bicmos technology

230 GHz self-aligned SiGeCHBT for 90 nm BiCMOS technology

引用

bipolar/bicmos circuits and technology meeting

作者： Chevalier, P Fellous, C Rubaldo, L Dutartre, D Laurens, M Jagueneau, T Leverd, F Bord, S Richard, C Lenoble, D Bonnouvrier, J Marty, M Perrotin, A Gloria, D Saguin, F Barbalat, B Beerkens, R Zerounian, N Aniel, F Chantre, A STMicroelectronics F-38926 Crolles France

This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to bicmos perfo... 详细信息

ISBN: (纸本)0780386183

关键词： silicon compounds germanium compounds wide band gap semiconductors heterojunction bipolar transistors millimetre wave bipolar transistors bicmos integrated circuits arsenic bicmos technology self-aligned HBT selective epitaxial base arsenic-doped monocrystalline emitter 230 GHz 90 nm SiGeC As millimetre wave bipolar transistors bicmos technology Heterojunction bipolar transistors wide band gap semiconductors bicmos integrated circuits Germanium compound, NOS Arsenic Silicon Compounds automatic calibration

来源：评论

学校读者我要写书评

暂无评论

"On-glass" process option for bicmos technology

"On-glass" process option for BiCMOS technology

引用

bipolar/bicmos circuits and technology meeting

作者： Aksen, E van Noort, WD Bower, D Bell, N Dekker, R de Boer, W Rodriguez, A Deixler, P Havens, RJ Magnée, PHC Philips Res Leuven B-3001 Louvain Belgium

ISBN: (纸本)0780386183

An industrial SiGe bicmos technology is presented, in which the silicon substrate has been removed and replaced by a lossless glass substrate. This will! enable the integration of better passives, while the active devices remain fully library compatible. Specifically, ideal NPN characteristics with 111/94 GHz f(T)/f(max) are shown without significant degradation of the thermal characteristics. This substrate transfer technology requires almost no changes to the standard processing and gives access to high-performance inverse NPN and vertical PNP devices, in addition to the lossless substrate.

关键词： bicmos integrated circuits glass substrates heterojunction bipolar transistors millimetre wave bipolar transistors Ge-Si alloys semiconductor materials HBT on-glass process bicmos technology lossless glass substrate passives integration substrate transfer technology inverse NPN devices vertical PNP devices 111 GHz 94 GHz SiGe bicmos technology millimetre wave bipolar transistors bicmos integrated circuits Germanium silicon alloys Silicon germanium Substrates

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共111页 << < 56 57 58 59 60 61 62 63 64 65 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：