We present IBM's next-generation, cost-performance-optimized bicmostechnology (bicmos 8WL) which combines a state-of-the-art suite of SiGe NPNs, foundry compatible 0.13 μm CMOS, and a rich set of modular passive...
详细信息
This paper describes a WCDMA direct conversion receiver which has been integrated in a bicmos SiGe-Carbon process featuring 0.25um/fT=60GHz bipolar transistor. This receiver includes integrated RF-Front-End with local...
详细信息
We demonstrate a bicmos process which uses only 22 mask steps to fabricate four types of SiGe:C HBTs, in combination with a triple-well, 2.5V CMOS core and a full menu of passive elements. Key process feature is a 2-m...
详细信息
Using a first generation standard silicon germanium (SiGe):C HBT bicmos process, a personal digital cellular (PDC) LNA noice factor (NF) of 1.0 dB at 850 MHz and 1.2 dB at 1.5 GHz has been achieved. The LNA NF can be ...
详细信息
Using a first generation standard silicon germanium (SiGe):C HBT bicmos process, a personal digital cellular (PDC) LNA noice factor (NF) of 1.0 dB at 850 MHz and 1.2 dB at 1.5 GHz has been achieved. The LNA NF can be further reduced by using the second generation enhanced SiGe:C HBT bicmos process. The mixer performance is equally impressive. The NF of the downconversion mixer at 1.5 GHz is just 6.2 dB with a conversion gain of 12 dB. The mixer IIP3 is +9.9 dBm at a current drain of 5.6 mA. Design techniques are given on how to achieve high linearity with minimal current drain resulting in a 881 MHz LNA with an IIP3 of +12.4 dBm with just 6 mA of current and a NF of 1.4 dB using the first generation SiGe:C HBT bicmos process. The second generation enhanced SiGe:C HBT bicmos process should further reduce the noise figure. (C) 2003 Elsevier B.V. All rights reserved.
Carbon-doped SiGe (SiGe:C) bipolar devices have been developed and integrated in to a 0.25 mum CMOS platform. The resulting SiGe:C bicmostechnology offers a wide spectrum of active and passive devices for wireless an...
详细信息
Carbon-doped SiGe (SiGe:C) bipolar devices have been developed and integrated in to a 0.25 mum CMOS platform. The resulting SiGe:C bicmostechnology offers a wide spectrum of active and passive devices for wireless and wired communication systems. A high-performance variant of the bipolar transistor has been derived from the standard transistors by reduction of some transistor dimensions. With these alterations, f(T) and f(max) of the bipolar transistors reaches 120 and 140 GHz, respectively. Circuit applications of the devices are demonstrated. Static and dynamic divider circuits have a maximum input frequency of 62 and 72 GHz, respectively. Integrated LC oscillators with frequencies up to 60 GHz are also demonstrated. (C) 2003 Elsevier B.V. All rights reserved.
Modern class-D audio and plasma displays depend on high voltage IC technology and power transistors. 100-300 V bicmos level shifted gate drivers control 100 V trench MOSFETs and 300 V insulated gate bipolar transistor...
详细信息
Modern class-D audio and plasma displays depend on high voltage IC technology and power transistors. 100-300 V bicmos level shifted gate drivers control 100 V trench MOSFETs and 300 V insulated gate bipolar transistors in thermally efficient, low inductance direct packages.
This paper investigates the methodologies for generating and integrating scalable bipolar models in the modern design environment. Additionally, fundamental bipolar parameter scaling is reviewed and demonstrated with ...
详细信息
This paper investigates the methodologies for generating and integrating scalable bipolar models in the modern design environment. Additionally, fundamental bipolar parameter scaling is reviewed and demonstrated with a scalable SiGe HBT model valid for models such as VBIC, MEXTRAM, and HiCUM.
暂无评论