检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

970 篇 会议
136 篇 期刊文献

馆藏范围

1,106 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

662 篇 工学
- 495 篇 电气工程
- 244 篇 电子科学与技术（可...
- 95 篇 计算机科学与技术...
- 86 篇 信息与通信工程
- 85 篇 材料科学与工程（可...
- 29 篇 软件工程
- 16 篇 控制科学与工程
- 14 篇 仪器科学与技术
- 11 篇 化学工程与技术
- 7 篇 冶金工程
- 6 篇 光学工程
- 5 篇 动力工程及工程热...
- 4 篇 建筑学
- 2 篇 力学（可授工学、理...
- 2 篇 轻工技术与工程
- 1 篇 机械工程
- 1 篇 土木工程
- 1 篇 测绘科学与技术
- 1 篇 航空宇航科学与技...
136 篇 理学
- 117 篇 物理学
- 23 篇 数学
- 12 篇 化学
- 4 篇 统计学（可授理学、...
- 1 篇 系统科学
35 篇 管理学
- 34 篇 管理科学与工程(可...
- 6 篇 工商管理
6 篇 经济学
- 6 篇 应用经济学
1 篇 法学
- 1 篇 社会学
1 篇 医学
- 1 篇 临床医学

主题

505 篇 bicmos integrate...
209 篇 silicon germaniu...
168 篇 heterojunction b...
153 篇 cmos technology
137 篇 germanium silico...
100 篇 bipolar transist...
92 篇 radio frequency
86 篇 cmos integrated ...
75 篇 cmos process
59 篇 implants
59 篇 voltage
52 篇 bicmos
48 篇 isolation techno...
40 篇 silicon
38 篇 sige
34 篇 power amplifiers
34 篇 bicmos technolog...
34 篇 mos devices
33 篇 gain
33 篇 capacitance

机构

31 篇 ihp
29 篇 stmicroelectroni...
10 篇 stmicroelect f-3...
10 篇 school of electr...
9 篇 ibm thomas j. wa...
9 篇 imec leuven
9 篇 auburn univ dept...
8 篇 ihp d-15236 fran...
8 篇 texas instrument...
7 篇 philips research...
7 篇 georgia inst tec...
7 篇 ibm corp thomas ...
6 篇 microelectronics...
6 篇 stmicroelectroni...
6 篇 ihp technol pk 2...
6 篇 central research...
6 篇 ibm microelectro...
5 篇 stmicroelectroni...
5 篇 texas tech univ ...
5 篇 nxp semicond res...

作者

22 篇 cressler john d.
21 篇 p. chevalier
20 篇 b. heinemann
19 篇 d. knoll
18 篇 r. barth
17 篇 a. chantre
16 篇 b. tillack
13 篇 h. rucker
13 篇 chevalier p.
13 篇 w. winkler
13 篇 p. schley
12 篇 g. avenier
12 篇 t. yamazaki
11 篇 d. harame
10 篇 s. marschmeyer
10 篇 john d. cressler
10 篇 dai fa foster
10 篇 j. dunn
10 篇 a. fox
10 篇 s. decoutere

语言

1,106 篇 英文

检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

共 1106 条记录，以下是641-650 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

Optimization of vertical profiles of SiGe HBT/bicmos by promoting emitter diffusion process

Optimization of vertical profiles of SiGe HBT/BiCMOS by prom...

引用

bipolar/bicmos circuits and technology meeting

作者： M. Miura H. Shimamoto R. Hayami A. Kodama T. Tominari T. Hashimoto K. Washio Central Research Laboratory Hitachi and Limited Kokubunji Tokyo Japan Renesas Northern Japan Semiconductor Inc. Japan Device Development Center Hitachi and Limited Tokyo Japan

A new concept, promoting emitter diffusion (PED) process, by using high-temperature annealing, is proposed for fabricating high-performance SiGe HBTs. Both the cut-off frequency and maximum oscillation frequency exceeded 200 GHz when the annealing temperature was increased from 885/spl deg/C to 1000/spl deg/C. This PED process concept is based on the fact that the increased phosphorus diffusion can more than compensate for increased boron diffusion and decreased base thickness.

关键词： Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors bicmos integrated circuits Annealing Cutoff frequency Boron Thermal resistance Thermal engineering Carbon dioxide

来源：评论

学校读者我要写书评

暂无评论

Differential distributed amplifier and oscillator in SiGe bicmos using close-packed interleaved on-chip transmission lines

Differential distributed amplifier and oscillator in SiGe Bi...

引用

bipolar/bicmos circuits and technology meeting

作者： D. Guckenberger K.T. Kornegay Cornell Broadband Communications Research Laboratory Cornell University Ithaca NY USA

A monolithic differential distributed amplifier using close-packed, shielded, meandered transmission lines and a delay-matched rotationally symmetric amplifier cell is implemented using a SiGe bicmos process with an f/sub T/ of 120 GHz. A broadband differential power gain of 7.5 dB is achieved with a bandwidth of 25 GHz, while consuming 30 mA from a 3.3 V supply. The amplifier can also be configured as a differential oscillator by connecting the input and output pads with wire bonds. This results in an oscillation frequency of 9.2 GHz with a phase noise of -103 dBc/Hz at a 1 MHz offset and single-ended output power of -6 dBm.

关键词： Distributed amplifiers Oscillators Silicon germanium Germanium silicon alloys bicmos integrated circuits Transmission lines Power transmission lines Broadband amplifiers Differential amplifiers Delay lines

来源：评论

学校读者我要写书评

暂无评论

Lateral and vertical scaling of a QSA HBT for a 0.13/spl mu/m 200GHz SiGe:C bicmos technology

Lateral and vertical scaling of a QSA HBT for a 0.13/spl mu/...

引用

bipolar/bicmos circuits and technology meeting

作者： S. Van Huylenbroeck A. Sibaja-Hernandez A. Piontek L.J. Choi M.W. Xu N. Ouassif F. Vleugels K. Van Wichelen L. Witters E. Kunnen P. Leray K. Devriendt X. Shi R. Loo S. Decoutere IMEC Leuven Belgium ESAT K.U. Leuven Leuven Belgium

A 200 GHz F/sub t/ SiGe:C HBT has been integrated into a 0.13 /spl mu/m bicmos technology. A previous generation low complexity quasi self-aligned architecture (QSA) is scaled down both in a lateral and vertical way. Lateral sizing is obtained by using present-day step and scan tools. Vertical sizing is achieved by reducing the thermal budget of the active module and by an aggressive scaling of the SiGe:C base epitaxial layer. A deep trench module, featuring a thick oxide liner, has been developed. Excellent DC parameters and peak Ft/Fmax values of 200/160 GHz are demonstrated. The CMOS device characteristics remain unchanged by applying low thermal budget processing in the bipolar module.

关键词： Heterojunction bipolar transistors bicmos integrated circuits CMOS technology Epitaxial layers CMOS process Epitaxial growth Power generation Frequency Substrates Capacitance

来源：评论

学校读者我要写书评

暂无评论

An investigation of the RF/analog characteristics of multiple variants SiGe HBTs for optical and wireless applications

An investigation of the RF/analog characteristics of multipl...

引用

bipolar/bicmos circuits and technology meeting

作者： M.T. Yang D.C.W. Kuo P.P.C. Ho C.W. Kuo T.J. Yeh A.K.L. Chang C.Y. Lee Y.T. Chia G.J. Chern K.L. Young D.D. Tang J.Y.C. Sun Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan

ISBN: (纸本)0780386183

Multiple variants of SiGe HBTs, using selected collector implants, suitable for wired and wireless applications were explored. The RF/analog characteristics of HBTs featured with fT/BV/sub CEO/ values of 130 GHz/2.3 V, 80 GHz/3.4 V and 60 GHz/ 4.8 V were characterized. The dependence of bias, temperature, frequency, noise, power, and geometry were investigated to provide designers with appropriate performance-breakdown design coverage and flexibility.

关键词： Radio frequency Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors CMOS technology Implants bicmos integrated circuits Temperature dependence Semiconductor device noise Optical fiber networks

来源：评论

学校读者我要写书评

暂无评论

Fully-integrated WCDMA direct conversion SiGeC bicmos receiver

Fully-integrated WCDMA direct conversion SiGeC BiCMOS receiv...

引用

bipolar/bicmos circuits and technology meeting

作者： P. Garcia B. Pellat J.-P. Blanc P. Persechini V. Knopik L. Baud F. Goussin D. Thevenet S. Majcherczak F. Reaute O. Richard P. Conti B. Szelag D. Belot Analog RF Design Group-CR&D STMicroelectronics Crolles France Advanced System Technology-39 ST Microelectronics N.V. Geneva Switzerland

This paper describes a WCDMA direct conversion receiver which has been integrated in a bicmos SiGe-carbon process featuring 0.25 /spl mu/m/f/sub T/=60 GHz bipolar transistors. This receiver includes an integrated RF-front-end with local oscillator quadrature generator, 5/sup th/ order Butterworth analog baseband lowpass filter (LPF) and variable gain amplifier (VGA), cut-off frequency calibrator, DAC for DC-offset calibration, serial bus interface and voltage and current reference generators. In the high/low gain modes, this device consumes 25 mA and 20 mA respectively with 2.7 V power supply. The die is wire bonded directly on the validation board. Within the receive band, the measurements show 51 dB of overall gain, NF=5 dB, IIP3= -9 dBm, ICP1 = -15dBm.

关键词： Multiaccess communication bicmos integrated circuits Gain bipolar transistors Local oscillators Baseband Filters Cutoff frequency Calibration Voltage-controlled oscillators

来源：评论

学校读者我要写书评

暂无评论

QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-bicmos manufacturing technology witg elite passives for emerging microwave applications

QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS m...

引用

bipolar/bicmos circuits and technology meeting

作者： P. Deixler A. Rodriguez W. De Boer H. Sun R. Colclaser D. Bower N. Bell A. Yao R. Brock Y. Bouttement G.A.M. Hurkx L.F. Tiemeijer J.C.J. Paasschens H.G.A. Huizing D.M.H. Hartskeerl P. Agrarwal P.H.C. Magnee E. Aksen J.W. Slotboom Philips Semiconductors NY USA Philips RF Device Modeling Group San Jose USA Philips RF Modeling Group Caen France Philips Research Leuven Leuven Belgium Philips Natlab Eindhoven The Netherlands Univ. Delft Netherlands

ISBN: (纸本)0780386183

QUBiC4X is a cost-effective ultra-high-speed SiGe:C RF-bicmos technology for emerging microwave applications with NPN f{sub}T/f{sub}(max) up to 130/140GHz, enhanced RF-oriented 2.5V CMOS, SiGe:C Power Amplifiers with 88% power-added efficiency, distinguished substrate isolation, full suite of elite high-density passives, 5 metal layers and an advanced design flow.

关键词： Manufacturing Microwave technology bicmos integrated circuits Temperature Inductors CMOS technology Radio frequency Wiring Electromigration Copper

来源：评论

学校读者我要写书评

暂无评论

Advances in SiGe HBT bicmos technology

Advances in SiGe HBT BiCMOS technology

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： A. Joseph L. Lanzerotti X. Liu D. Sheridan J. Johnson Q. Liu J. Dunn J.-S. Rieh D. Harame IBM Microelectronics Division Semiconductor Research and Development Center Essex Junction VT USA IBM Microelectronics Division Semiconductor Research and Development Center Hopewell Junction NY USA

Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) bicmos technology has established a strong foothold in the communications marketplace by offering a cost competitive solution for a myriad of products. SiGe bicmos technologies currently address various applications ranging from 0.9-77 GHz. At the heart of this success is the ease of integration of a high performance SiGe HBT with state-of-the-art CMOS and passive elements. We present the advances in SiGe bicmos technologies and an outlook of future challenges and opportunities.

关键词： Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors bicmos integrated circuits CMOS technology Implants Silicon carbide Microelectronics System-on-a-chip Research and development

来源：评论

学校读者我要写书评

暂无评论

A comparison of Si CMOS, SiGe bicmos, and InP HBT technologies for high-speed and millimeter-wave ICs

A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologi...

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： S.P. Voinigescu T.O. Dickson R. Beerkens I. Khalid P. Westergaard Edward S. Rogers Department of Electrical & Computer Engineering University of Toronto Toronto ONT Canada

The paper presents an overview of Si MOSFET, SiGe HBT, and InP HBT device and circuit performance for broadband and tuned millimeter-wave applications. Implementations of CMOS-only, SiGe-HBT-only, SiGe bicmos, and InP... 详细信息

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits Indium phosphide Heterojunction bipolar transistors CMOS technology Millimeter wave technology Millimeter wave integrated circuits MOSFET circuits Circuit optimization

来源：评论

学校读者我要写书评

暂无评论

Mechanical planar biaxial strain effects in Si/SiGe HBT bicmos technology

Mechanical planar biaxial strain effects in Si/SiGe HBT BiCM...

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： M.B. Nayeem B.M. Haugerud R. Krithivasan Yuan Lu Chendong Zhu R.E. Belford J.D. Cressler A.J. Joseph School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA USA Belford Research Inc. Hilton Head SC USA IBM Essex Junction VT USA

The first results of the effects of mechanical planar biaxial tensile strain applied, post fabrication, to Si/SiGe HBT bicmos technology are reported in this work. Planar biaxial tensile strain was applied to the samples, which included both standard Si CMOS, SiGe HBT, and an epitaxial-base Si BJT control, for both first and second generation SiGe technologies. Device characterization was performed before and after strain, under identical conditions. At a strain level of 0.123%, increases in the saturation current as well as effective mobility are observed for the nFET. The Si BJT /SiGe HBT showed a consistent decrease in collector current and hence current gain after strain.

关键词： Capacitive sensors Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors bicmos integrated circuits Integrated circuit technology meeting planning Monolithic integrated circuits Radio frequency

来源：评论

学校读者我要写书评

暂无评论

Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors

Speed and power performance comparison of state-of-the-art C...

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： B. Jagannathan D. Greenberg D.I. Sanderson J.-S. Rieh J. Pekarik J.O. Plouchart G. Freeman SRDC Microelectronics Division IBM USA

DC and RF characteristics of Si nFETs and SiGe HBTs are compared in IBM's leading-edge production RFCMOS and bicmos technologies at 90 and 130 nm nodes respectively. Underlying performance trade-offs to achieve lo... 详细信息

关键词： Silicon germanium Germanium silicon alloys Radio frequency CMOS technology Heterojunction bipolar transistors bicmos integrated circuits FETs Production Scattering parameters Costs

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共111页 << < 61 62 63 64 65 66 67 68 69 70 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：