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IEEE Biopolar/bicmos circuits and technology meeting

作者： Laurens, M Martinet, B Kermarrec, O Campidelli, Y Deléglise, F Dutartre, D Troillard, G Gloria, D Bonnouvrier, J Beerkens, R Rousset, V Leverd, F Chantre, A Monroy, A STMicroelect Ctr Commun MIcroelect Crolles F-38926 Crolles France

This paper describes a manufacturable 0.13mum SiGe:C bicmos technology for optical networking and wireless applications, with npn f(T)/f(max) or 166/175GHz and 1.8V BVCEO, dual V-T and dual gate oxide CMOS devices, hi... 详细信息

ISBN: (纸本)0780378008

关键词： Heterojunction bipolar transistors

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A 5V complementary-SiGe bicmos technology for high-speed precision analog circuits

A 5V complementary-SiGe BiCMOS technology for high-speed pre...

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IEEE Biopolar/bicmos circuits and technology meeting

作者： El-Kareh, B Balster, S Leitz, W Steinmann, P Yasuda, H Corsi, M Dawoodi, K Dirnecker, C Foglietti, P Haeusler, A Menz, P Ramin, M Scharnagl, T Schiekofer, M Schober, M Schulz, U Swanson, L Tatman, D Waitschull, M Weijtmans, JW Willis, C Texas Instruments Inc Freising Weihenstephan Germany

A novel complementary-SiGe bicmos technology developed for ultra-high speed precision analog circuits is presented. The modular process offers comparable NPN and PNP performance utilizing unique emitter interface and ... 详细信息

ISBN: (纸本)0780378008

关键词： CMOS integrated circuits

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A high performance 0.18μm bicmos technology employing high carbon content in the base layer of the SiGe HBT to achieve low variability of hFE

A high performance 0.18μm BiCMOS technology employing high ...

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IEEE Biopolar/bicmos circuits and technology meeting

作者： Sawada, S Ohnishi, T Saitoh, T Yuki, K Hasegawa, K Shimizu, K Clifton, PA Gallerano, A Pinto, A Matsushita Elect Ind Co Ltd Semiconductor Co Kyoto Japan

ISBN: (纸本)0780378008

We present a 0.18mum bicmos technology in which hFE variability of Silicon-Germanium Heterojunction bipolar Transistors (SiGe HBTs) is greatly minimized by means of increased Neutral Base Recombination adding high carbon content in the base layer. In this work, we propose, for the first time, to use a high concentration of carbon in the base of SiGe HBTs as a practical way to increase the base current in a predictable and controlled way. Consequently, variability of hFE is greatly decreased and a significant improvement of device matching can be achieved. Furthermore, to guarantee a sufficiently high value of hFE we propose a Silicon-Germanium cap architecture to increase the collector current. HBTs fabricated using this technology exhibit a peak fT of 90GHz and a peak fMAX of 140GHz with an fTxBVceo of 255GHzV. Together with state of the art 0.18mum CMOS platform and high quality passives this technology is a viable candidate for the design of high frequency analog circuits.

关键词： CMOS integrated circuits

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bicmos7RF:: a highly-manufacturable 0.25-μm bicmos RF-applications-dedicated technology using non selective SiGe:C epitaxy

BiCMOS7RF:: a highly-manufacturable 0.25-μm BiCMOS RF-appli...

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IEEE Biopolar/bicmos circuits and technology meeting

作者： Baudry, H Szelag, B Deléglise, F Laurens, M Mourier, J Saguin, F Troillard, G Chantre, A Monroy, A STMicroelect Ctr Commun Microelect Crolles F-38921 Crolles France

ISBN: (纸本)0780378008

This paper describes ST new bicmos RF technology based on a mature 0.25mum CMOS process. Two SiGe:C HBTs;are implemented for low and high voltage applications. Very low noise figure of 0.4dB at 2GHz is achieved. Other devices like isolated vertical PNP BJT, NLDEMOS and advanced passives are integrated in this technology to address RF circuit needs.

关键词： CMOS integrated circuits

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A 0.13 m bicmos technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax)...

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Proceedings of the 2003 bipolar/bicmos circuits and technology meeting

作者： Orner, B.A. Liu, Q.Z. Rainey, B. Stricker, A. Geiss, P. Gray, P. Zierak, M. Gordon, M. Collins, D. Ramachandran, V. Hodge, W. Willets, C. Joseph, A. Dunn, J. Rieh, J.-S. Jeng, S.-J. Eld, E. Freeman, G. Ahlgren, D. IBM Microelectronics Division IBM Mailstop 972D Essex Junction VT 05452 United States

We present for the first time a very high performance SiGeHBT with fT = 200 GHz and fmax = 280 GHz that has been successfully integrated with IBM's standard 0.13 m foundry-compatible CMOS node into our next genera... 详细信息

关键词： Heterojunction bipolar transistors

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A fully-monolithic SiGe-bicmos transceiver chip for 24 GHz applications

A fully-monolithic SiGe-BiCMOS transceiver chip for 24 GHz a...

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IEEE Biopolar/bicmos circuits and technology meeting

作者： Ghazinour, A Wennekers, P Schmidt, J Yi, Y Reuter, R Teplik, J Motorola Inc Semicond Prod Sector Digital DNATM Labs Europe D-13507 Berlin Germany

ISBN: (纸本)0780378008

This paper presents the design of a VCO and a frequency divider integrated together with a phase-frequency detector and a mixer on one transceiver chip for a 24GHz FM-CW radar system. The VCO is a differential varactor-tuned microstrip oscillator with 1.25GHz tuning frequency, which delivers a flat output power of 7dBm at each of the two differential 50Omega loads over the entire frequency range. Additional differential RF-outputs drive the inputs of the receiver circuits, a frequency divider with a division ratio of 32 and a single-balanced-mixer. The transmitter circuit has been fully integrated in the Motorola production 0.35mum SiGe-bicmos technology.

关键词： CMOS integrated circuits

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Improving bicmos technologies using BJT parametric mismatch characterisation

Improving BiCMOS technologies using BJT parametric mismatch ...

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Proceedings of the 2003 bipolar/bicmos circuits and technology meeting

作者： Tuinhout, Hans P. 5656 AA Eindhoven Netherlands

Why and how can parametric mismatch studies help to improve IC-technologies? After an introduction on the importance of parametric mismatch for performance and yield of mixed signal as well as digital technologies, the basic terminology and techniques for BJT mismatch fluctuation assessment are reviewed. Two examples are discussed to demonstrate how parametric mismatch fluctuation studies help to provide better insights into different aspects of the microscopic device architecture of poly-emitter BJTs. The ensuing process refinements result in better circuit functionality as well as yield improvements.

关键词： Integrated circuit manufacture

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A bicmos SiGe low phase noise tunable 30 GHz RF source using a frequency tripler and a VCO

A BiCMOS SiGe low phase noise tunable 30 GHz RF source using...

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IEEE Biopolar/bicmos circuits and technology meeting

作者： Coustou, A Dubuc, D Graffeuil, J Tournier, E Llopis, O Boulanger, C Plana, R Legoascoze, V CNRS LAAS F-31077 Toulouse 4 France

ISBN: (纸本)0780378008

In this paper, we present a 10/30GIlz tripler and an X band VCO, integrated on a single chip, using a 0.35mum, 60GHz-F-MAX bicmos SiGe technology. Theses two circuits are used together in order to implement a low phase noise MMIC 30GHz source. The tripler exhibits a conversion gain in the -5dB range. The VCO exhibits a phase noise of -87dBc/Hz at a 100kHz frequency offset. The supply voltage of the chip is 7 volts and the total DC power consumption is in the range of 900mW. The circuit exhibits a surface area less than 1mm(2) (probe pads area excluded).

关键词： Variable frequency oscillators

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A complementary bicmos technology with high speed npn and pnp SiGe:: CHBTs

A complementary BiCMOS technology with high speed npn and pn...

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IEEE International Electron Devices meeting

作者： Heinemann, B Barth, R Bolze, D Drews, J Formanek, P Fursenko, O Glante, M Glowatzki, K Gregor, A Haak, U Höppner, W Knoll, D Kurps, R Marschmeyer, S Orlowski, S Rücker, H Schley, P Schmidt, D Scholz, R Winkler, W Yamamoto, Y IHP D-15236 Frankfurt Oder Germany

ISBN: (纸本)0780378725

We demonstrate SiGe:C pnp HBTs in a complementary bipolar CMOS flow with f(T)/f(max) values of 80GHz/120GHz at BVCEO = 2.6V and a ring oscillator delay of 8.9ps. The simultaneously fabricated npn HBTs sustain no significant performance loss compared to the npn-only bicmos confirmed by f(T)/f(max) values of 180GHz/185GHz and a ring oscillator delay of 4.6ps. A pnp-only bicmos flow produces peak fT/fmax values for pnp devices of 115GHz/115GHz. The high speed performance of the pnp transistors surpasses the best reported values of this transistor type substantially.

关键词： CMOS integrated circuits

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A direct-conversion receiver IC for WCDMA mobile systems

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IEEE JOURNAL OF SOLID-STATE circuits 2003年第9期38卷 1555-1560页

作者： Reynolds, SK Floyd, BA Beukema, T Zwick, T Pfeiffer, U Ainspan, H IBM Corp Thomas J Watson Res Ctr Yorktown Hts NY 10598 USA

A prototype design of a 2.7-3.3-V 14.5-mA SiGe direct-conversion receiver IC for use in third-generation wide-band code-division multiple-access (3G WCDMA) mobile cellular systems has been completed and measured. The design includes a by-passable low-noise amplifier (LNA), a quadrature downconverter, a local-oscillator frequency divider and quadrature generator, and variable-gain baseband amplifiers integrated on chip. The design achieves a cascaded, LNA-referred noise figure (including an interstage surface acoustic wave filter) of 4.0 dB, an in-band IIP3 of -18.6 dBm, and local-oscillator leakage at the LNA input of -112 dBm. The static sensitivity performance of the receiver IC is characterized using a software baseband processor to compute link bit-error rate.

关键词： code division multiaccess land mobile radio cellular systems receivers mixers low noise amplifiers (LNAs) bicmos direct conversion

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