检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

970 篇 会议
136 篇 期刊文献

馆藏范围

1,106 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

662 篇 工学
- 495 篇 电气工程
- 244 篇 电子科学与技术（可...
- 95 篇 计算机科学与技术...
- 86 篇 信息与通信工程
- 85 篇 材料科学与工程（可...
- 29 篇 软件工程
- 16 篇 控制科学与工程
- 14 篇 仪器科学与技术
- 11 篇 化学工程与技术
- 7 篇 冶金工程
- 6 篇 光学工程
- 5 篇 动力工程及工程热...
- 4 篇 建筑学
- 2 篇 力学（可授工学、理...
- 2 篇 轻工技术与工程
- 1 篇 机械工程
- 1 篇 土木工程
- 1 篇 测绘科学与技术
- 1 篇 航空宇航科学与技...
136 篇 理学
- 117 篇 物理学
- 23 篇 数学
- 12 篇 化学
- 4 篇 统计学（可授理学、...
- 1 篇 系统科学
35 篇 管理学
- 34 篇 管理科学与工程(可...
- 6 篇 工商管理
6 篇 经济学
- 6 篇 应用经济学
1 篇 法学
- 1 篇 社会学
1 篇 医学
- 1 篇 临床医学

主题

505 篇 bicmos integrate...
209 篇 silicon germaniu...
168 篇 heterojunction b...
153 篇 cmos technology
137 篇 germanium silico...
100 篇 bipolar transist...
91 篇 radio frequency
86 篇 cmos integrated ...
75 篇 cmos process
59 篇 implants
59 篇 voltage
52 篇 bicmos
48 篇 isolation techno...
40 篇 silicon
38 篇 sige
34 篇 power amplifiers
34 篇 bicmos technolog...
34 篇 mos devices
33 篇 gain
33 篇 capacitance

机构

31 篇 ihp
29 篇 stmicroelectroni...
10 篇 stmicroelect f-3...
10 篇 school of electr...
9 篇 ibm thomas j. wa...
9 篇 imec leuven
9 篇 auburn univ dept...
8 篇 ihp d-15236 fran...
8 篇 texas instrument...
7 篇 philips research...
7 篇 georgia inst tec...
7 篇 ibm corp thomas ...
6 篇 microelectronics...
6 篇 stmicroelectroni...
6 篇 ihp technol pk 2...
6 篇 central research...
6 篇 ibm microelectro...
5 篇 stmicroelectroni...
5 篇 texas tech univ ...
5 篇 nxp semicond res...

作者

22 篇 cressler john d.
21 篇 p. chevalier
20 篇 b. heinemann
19 篇 d. knoll
18 篇 r. barth
17 篇 a. chantre
16 篇 b. tillack
14 篇 w. winkler
13 篇 h. rucker
13 篇 chevalier p.
13 篇 p. schley
12 篇 g. avenier
12 篇 t. yamazaki
11 篇 d. harame
10 篇 s. marschmeyer
10 篇 john d. cressler
10 篇 dai fa foster
10 篇 j. dunn
10 篇 a. fox
10 篇 s. decoutere

语言

1,106 篇 英文

检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

共 1106 条记录，以下是671-680 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

A direct-conversion receiver IC for WCDMA mobile systems

A direct-conversion receiver IC for WCDMA mobile systems

引用

2002 bipolar/bicmos circuits and technology meeting

作者： Reynolds, SK Floyd, BA Beukema, T Zwick, T Pfeiffer, U Ainspan, H IBM Corp Thomas J Watson Res Ctr Yorktown Hts NY 10598 USA

A prototype design of a 2.7-3.3-V 14.5-mA SiGe direct-conversion receiver IC for use in third-generation wide-band code-division multiple-access (3G WCDMA) mobile cellular systems has been completed and measured. The design includes a by-passable low-noise amplifier (LNA), a quadrature downconverter, a local-oscillator frequency divider and quadrature generator, and variable-gain baseband amplifiers integrated on chip. The design achieves a cascaded, LNA-referred noise figure (including an interstage surface acoustic wave filter) of 4.0 dB, an in-band IIP3 of -18.6 dBm, and local-oscillator leakage at the LNA input of -112 dBm. The static sensitivity performance of the receiver IC is characterized using a software baseband processor to compute link bit-error rate.

关键词： code division multiaccess land mobile radio cellular systems receivers mixers low noise amplifiers (LNAs) bicmos direct conversion

来源：评论

学校读者我要写书评

暂无评论

Substrate modelling for RF and high-speed bipolar/bicmos circuits

Substrate modelling for RF and high-speed bipolar/BiCMOS cir...

引用

bipolar/bicmos circuits and technology meeting

作者： Strahle Pfost Infineon Technologies Munich Germany

The undesired influence of the substrate on circuit performance cannot be neglected for many advanced high-speed and RF circuits and must therefore be modelled correctly already in the design phase. This paper gives an overview of the interaction between circuit components and the substrate and reviews simulation techniques that can be used to determine its influence. In addition, the integration of substrate modelling into today's design environments will be discussed and explained by a practical example.

关键词： bicmos integrated circuits Integrated circuit modeling

来源：评论

学校读者我要写书评

暂无评论

Static bipolar 11 GHz SiGe divider with 1V power supply

Static bipolar 11 GHz SiGe divider with 1V power supply

引用

bipolar/bicmos circuits and technology meeting

作者： Rylov Rylyakov IBM Thomas J. Watson Research Center Yorktown Heights NY USA

A low-voltage static 1:2 divider using CML gates with a single-transistor switching stack was designed in a 0.18 /spl mu/m SiGe bicmos technology. The divider operates at 11 GHz from 1.0V supply and 16.2 GHz from 1.4 ... 详细信息

关键词： Frequency conversion Integrated circuit design bicmos integrated circuits Current mode logic Silicon compounds

来源：评论

学校读者我要写书评

暂无评论

Multi-port ESD protection using bi-directional SCR structures

Multi-port ESD protection using bi-directional SCR structure...

引用

bipolar/bicmos circuits and technology meeting

作者： Vaschenko Concannon ter Beek Hopper Nat. Semicond. Corp. Santa Clara CA USA National Semiconductor Corp. Santa Clara CA USA

A novel approach for the ESD protection of analog circuits using a pad-to-pad network is proposed and validated by numerical simulation and experimental data. The network is formed by inter-linked bi-directional SCR's. This network provides a space saving solution to the requirement for providing ESD protection for arbitrary pin-to-pin combinations, and is especially attractive for small analog circuits in bipolar and bicmos technologies.

关键词： bipolar analog integrated circuits bicmos analog integrated circuits Integrated circuit testing Integrated circuit reliability Electrostatic discharges Thyristors

来源：评论

学校读者我要写书评

暂无评论

Improving bicmos technologies using BJT parametric mismatch characterisation

Improving BiCMOS technologies using BJT parametric mismatch ...

引用

bipolar/bicmos circuits and technology meeting

作者： Tuinhout Philips Research Eindhoven Netherlands

Why and how can parametric mismatch studies help to improve IC-technologies? After an introduction on the importance of parametric mismatch for performance and yield of mixed-signal as well as digital technologies, the basic terminology and techniques for BJT mismatch fluctuation assessment are reviewed. Two examples are discussed to demonstrate how parametric mismatch fluctuation studies help to improve better device architecture of poly-emitter BJTs. The ensuing process refinements result in better circuit functionality as well as yield improvements.

关键词： bicmos integrated circuits bipolar transistors Yield estimation Circuit optimization

来源：评论

学校读者我要写书评

暂无评论

bicmos7RF: a highly-manufacturable 0.25-/spl mu/m bicmos RF-applications-dedicated technology using non selective SiGe:C epitaxy

BiCMOS7RF: a highly-manufacturable 0.25-/spl mu/m BiCMOS RF-...

引用

bipolar/bicmos circuits and technology meeting

作者： Baudry Szelag Deleglise Laurens Mourier Saguin Troillard Chantre Monroy Centre Commun de Microélectronique de Crolles STMicroelectronics Crolles France

This paper describes ST new bicmos RF technology based on a mature 0.25/spl mu/m CMOS process. Two SiGe:C HBTs are implemented for low and high voltage applications. Very low noise figure of 0.4dB at 2GHz is achieved. Other devices like isolated vertical PNP BJT, NLDEMOS and advanced passives are integrated in this technology to address RF circuit needs.

关键词： Heterojunction bipolar transistors bicmos integrated circuits Integrated circuit manufacture Epitaxial growth Silicon compounds Carbon

来源：评论

学校读者我要写书评

暂无评论

A 5V complementary-SiGe bicmos technology for high-speed precision analog circuits

A 5V complementary-SiGe BiCMOS technology for high-speed pre...

引用

bipolar/bicmos circuits and technology meeting

作者： El-Kareh Balster Leitz Steinmann Yasuda Corsi Dawoodi Dirnecker Foglietti Haeusler Menz Ramin Scharnagl Schiekofer Schober Schulz Swanson Tatman Waitschull Weijtmans Willis On temporary assignment to Freising Texas Instruments Germany On temporary assignment to Freising Texas Instruments Freising Germany Texas Instruments Dallas Texas USA Texas Instruments Deutschland Freising Germany

A novel complementary-SiGe bicmos technology developed for ultra-high speed precision analog circuits is presented. The modular process offers comparable NPN and PNP performance utilizing unique interface and SiGe bas... 详细信息

关键词： bicmos analog integrated circuits Integrated circuit design Integrated circuit manufacture MIM devices Thin film transistors Silicon compounds

来源：评论

学校读者我要写书评

暂无评论

A fully integrated 7-18 GHz power amplifier with on-chip output balun in 75 GHz-f/sub T/ SiGe-bipolar

A fully integrated 7-18 GHz power amplifier with on-chip out...

引用

bipolar/bicmos circuits and technology meeting

作者： Bakalski Vasylyev Simburger Thuringer Wohlmuth Scholtz Weger Infineon Technologies AG Munich Germany Institute of Communications and Radio-Frequency Engineering Vienna University of Technology Vienna Austria Brandenburg University of Technology Cottbus Cottbus Germany Brandenburg University of Technology Cottbus Germany

A fully integrated rf power amplifier for 7-18 GHz-f/sub T/ with no external components was realized in a 75GHz-f/sub T/, 0.35/spl mu/m-SiGe-bicmos technology. At 17.2GHz the push-pull amplifier with integrated output... 详细信息

关键词： Power amplifiers Integrated circuit design bicmos analog integrated circuits Baluns

来源：评论

学校读者我要写书评

暂无评论

A 150GHz f/sub T//f/sub max/ 0.13/spl mu/m SiGe:C bicmos technology

A 150GHz f/sub T//f/sub max/ 0.13/spl mu/m SiGe:C BiCMOS tec...

引用

bipolar/bicmos circuits and technology meeting

作者： Laurens Martinet Kermarrec Campidelli Deleglise Dutarte Troillard Gloria Bonnouvrier Beerkens Rousset Leverd Chantre Monroy STMicroelectronics Centre Commun de Microélectronique Crolles Cedex France STMicroelectronics Crolles FR STMicroelectronics Crolles France Central R&D Ottawa ON Canada

This paper describes a manufacturable 0.13/spl mu/m SiGe:C bicmos technology for optical networking and wireless applications, with npn f/sub T//f/sub max/ of 166/175GHz and 1.8V BV/sub CEO/, dual V/sub T/ and dual ga... 详细信息

关键词： Heterojunction bipolar transistors bicmos integrated circuits Integrated circuit manufacture Circuit optimization Silicon compounds Carbon

来源：评论

学校读者我要写书评

暂无评论

An 8.2-GHz, 14.4mW, 1.6dB NF SiGe bipolar LNA with DC current reuse

An 8.2-GHz, 14.4mW, 1.6dB NF SiGe bipolar LNA with DC curren...

引用

bipolar/bicmos circuits and technology meeting

作者： Gramegna Magliarisi Paparo STMicroelectronics Catania Italy

A balanced low noise amplifier (LNA) has been integrated in a 0.25/spl mu/m bicmos technology. To reduce power consumption and improve performances, two stages that share the same DC current have been stacked. A Miller effect neutralization scheme avoids the need to cascode transistors. The LNA takes an area of 0.8 /spl times/ 1.15 mm/sup 2/ (bondwire pads excluded) and draws 14.4mW from a 1.8V supply voltage. In this conditions, measured parameters at 8.2-GHz are NF=1.6dB, power gain Gp=22-dB, output P1dB=3.3dBm at 8.2-GHz.

关键词： Amplifiers bipolar integrated circuits bicmos integrated circuits Integrated circuit design Silicon compounds

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共111页 << < 64 65 66 67 68 69 70 71 72 73 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：