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A 0.13 /spl mu/m bicmos technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (...

引用

bipolar/bicmos circuits and technology meeting

作者： Orner Liu Rainey Stricker Geiss Gray Zierak Gordon Collins Ramachandran Hodge Willets Joseph Dunn Rieh Jeng Eld Freeman Ahlgren IBM Microelectron. Div. IBM Essex Junction VT USA IBM Microelectronics Division IBM Essex Junction VT USA Hopewell Junction NY Hopewell Junction Hopewell Junction NY USA IBM Microelectronics Division IBM Essex Junction VT

We present for the first time a very high performance SiGe HBT with f/sub T/ = 200 GHz and f/sub max/ = 280 GHz that has been successfully integrated with IBM's standard 0.13 /spl mu/m foundry-compatible CMOS node... 详细信息

关键词： Heterojunction bipolar transistors bicmos integrated circuits Semiconductor device modeling Semiconductor device manufacture Semiconductor process modeling Silicon compounds

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Cellular radio integration directions

Cellular radio integration directions

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bipolar/bicmos circuits and technology meeting

作者： Krenik Jau-Yuann Yang Texas Instruments Inc. Dallas TX USA

In spite of the enormous increase in cellular handset complexity projected for the next few years, users will continue to demand small, sleek, light-weight, and low-cost handsets that offer similar battery life to simple voice-only phones. This challenge to include color displays, games, audio, video, cameras, Bluetooth, WLAN, and multi-mode cellular in the same form-factor and power of today's handsets can only be met through aggressive integration of the handset electronics. This paper investigates one aspect of the integration challenge; the potential for integration of the handset radio functions in advanced bicmos or CMOS technology. Radio performance requirements, radio architectures, performance limitations of wafer process technology, development time, cost, and yield are investigated. Radio architectures suitable for integration are motivated and practical limitations are discussed.

关键词： bicmos integrated circuits CMOS integrated circuits Integrated circuit design Land mobile radio cellular systems

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A bicmos SiGe low phase noise tunable 30 GHz RF source using a frequency tripler and a VCO

A BiCMOS SiGe low phase noise tunable 30 GHz RF source using...

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bipolar/bicmos circuits and technology meeting

作者： Coustou Dubuc Graffeuil Tournier Llopis Boulanger Plana Legoascoze LAAS CNRS Toulouse France Université P. Sabatier Toulouse France CNES Toulouse France STMicroelectronics Crolles France

In this paper, we present a 10/30GHz tripler and an X band VCO, integrated on a single chip, using a 0.35/spl mu/m, 60GHz-F/sub MAX/ bicmos SiGe technology. These two circuits are used together in order to implement a low phase noise MMIC 30GHz source. The tripler exhibits a conversion gain in the -5dB range. The VCO exhibits a phase noise of -87dBc/Hz at a 100kHz frequency offset. The supply voltage of the chip is 7 volts and the total DC power consumption is in the range of 900mW. The circuit exhibits a surface area less than 1mm/sup 2/ (probe pads area excluded).

关键词： MIMICs bicmos integrated circuits Integrated circuit design Frequency conversion Voltage controlled oscillators Silicon compounds

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A fully-monolithic SiGe-bicmos transceiver chip for 24 GHz applications

A fully-monolithic SiGe-BiCMOS transceiver chip for 24 GHz a...

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bipolar/bicmos circuits and technology meeting

作者： Ghazinour Wennekers Schmidt Yin Yi Reuter Teplik Digital DNATM Laboratories-Europe Semiconductor Products Sector Motorola Inc. Berlin Germany Digital DNATM Laboratories Semiconductor Products Sector Motorola Inc. Tempe AZ USA

This paper presents the design of a VCO and a frequency divider integrated together with a phase-frequency detector and a mixer on one transceiver chip for a 24GHz FM-CW radar system. The VCO is a differential varactor-tuned microstrip oscillator with 1.25GHz tuning frequency, which delivers a flat output power of 7dBm at each of the two differential 50/spl Omega/ loads over the entire frequency range. Additional differential RF-outputs drive the inputs of the receiver circuits, a frequency divider with a division ratio of 32 and a single-balanced-mixer. The transmitter circuit has been fully integrated in the Motorola production 0.35/spl mu/m SiGe-bicmos technology.

关键词： Transceivers bicmos integrated circuits Integrated circuit design Voltage controlled oscillators Frequency conversion Mixers FM radar CW radar Silicon compounds

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A high performance 0.18/spl mu/m bicmos technology employing high carbon content in the base layer of the SiGe HBT to achieve low variability of hFE

A high performance 0.18/spl mu/m BiCMOS technology employing...

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bipolar/bicmos circuits and technology meeting

作者： Sawada Ohnishi Saitoh Yuki Hasegawa Shimizu Clifton Gallerano Pinto Seniconductor Company Matsushita Elecrric Indusrrial Company Limited Kyoto Japan Advanced Technology Research Laboratories Matsushita Elecrric Indusrrial Company Limited Osaka Japan PDF Solutions Inc.orporated San Jose CA USA

We present a 0.18/spl mu/m bicmos technology in which the hFE variability of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is greatly minimized by means of increased neutral base recombination adding high carbon content in the base layer. In this work, we propose, for the first time, to use a high concentration of carbon in the base of SiGe HBTs as a practical way to increase the base current in a predictable and controlled way. Consequently, variability of hFE is greatly decreased and a significant improvement of device matching can be achieved. Furthermore, to guarantee a sufficiently high value of hFE we propose a silicon-germanium cap architecture to increase the collector current. HBTs fabricated using this technology exhibit a peak fT of 90GHz and a peak fMAX of 140GHz with an fTxBVceo of 255GHzV. Together with state of the art 0.18/spl mu/m CMOS platform and high quality passives this technology is a viable candidate for the design of high frequency analog circuits.

关键词： Heterojunction bipolar transistors bicmos analog integrated circuits Carbon Integrated circuit fabrication Germanium alloys Silicon alloys

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Introduction to the 2001 bipolar/bicmos Circuit and technology meeting

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IEEE JOURNAL OF SOLID-STATE circuits 2002年第9期37卷 1160-1161页

作者： Schroter, M Dresden Univ Technol D-01062 Dresden Germany

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A 51GHz master-slave latch and static frequency divider in 0.18/spl mu/m SiGe bicmos

A 51GHz master-slave latch and static frequency divider in 0...

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bipolar/bicmos circuits and technology meeting

作者： Rylyakov IBM Thomas J. Watson Research Center Yorktown Heights NY USA

A master-slave latch and companion 1:2, 1:4 and 1:8 static frequency dividers fabricated in 120GHz f/sub T/ SiGe operate at 51GHz, while drawing 30 mA per latch (780mA total, with input-output buffers) from a -5.2V power supply. At 40Gb/s (40GHz clock) latch operates error-free (BER better than 10/sup -14/, 2/sup 31/-1 PRBS) with 152/spl deg/ data-clock phase margin. The directly observed width of the metastability zone of the latch is 1.2ps.

关键词： Frequency conversion Integrated circuit design bicmos integrated circuits Silicon compounds

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A 5 GHz low-power quadrature SiGe VCO with automatic amplitude control

A 5 GHz low-power quadrature SiGe VCO with automatic amplitu...

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bipolar/bicmos circuits and technology meeting

作者： Mazouffre Lapuyade Begueret Cathelin Belot Deval IXL Laboratory University of Bordeaux 1 Talence France Central R&D STMicroelectronics Crolles France

This paper presents the design and the experimental measurements of a fully integrated quadrature VCO and its prescaler for HiperLAN2 applications. The presented circuit is implemented in a bicmos SiGe 0.25/spl mu/m process from STMicroelectronics. The VCO and the prescaler are optimized for low voltage (<1.5V) and low power operation. The VCO draws 3 mA and fulfills an 18% of frequency tuning range, while exhibiting a phase noise of -93 dBc/Hz at 1 MHz from the 5.2 GHz carrier. The amplitude and phase errors were measured to respectively less than 0.2 dB and 3 /spl deg/. The integrated prescaler presents a maximum operating frequency of 10 GHz with a supply current of 1 mA.

关键词： Voltage controlled oscillators Integrated circuit design bicmos analog integrated circuits Counting circuits Silicon compounds

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SiGe HBT and bicmos technologies

SiGe HBT and BiCMOS technologies

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International Electron Devices meeting (IEDM)

作者： K. Washio Central Research Laboratory Hitachi and Limited Kokubunji Tokyo Japan

Improvements in high-speed performance, impurity-profile engineering, and technology trends in SiGe HBTs and bicmos devices are briefly reviewed. Advances in self-aligned SiGe HBT structures associated with a thin base have significantly raised cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ to more than 200 GHz. Impurity-profile engineering has enhanced operating speed and has improved characteristic controllability. In addition, a scaled-down emitter has provided both high-speed and low-power performance. In regards to SiGe bicmos technology, scaling of CMOS gate length is continuing rapidly in response to the need for sophisticated functions in communication LSIs. Accordingly, integration process schemes and technologies for embedding scaled CMOS with high-speed SiGe HBTs are being developed.

关键词： Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors bicmos integrated circuits CMOS technology Electrodes Cutoff frequency Parasitic capacitance Epitaxial growth Nonhomogeneous media

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A complementary bicmos technology with high speed npn and pnp SiGe:C HBTs

A complementary BiCMOS technology with high speed npn and pn...

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International Electron Devices meeting (IEDM)

作者： B. Heinemann R. Barth D. Bolze J. Drews P. Formanek O. Fursenko M. Glante K. Glowatzki A. Gregor U. Haak W. Hoppner D. Knoll R. Kurps S. Marschmeyer S. Orlowski H. Rucker P. Schley D. Schmidt R. Scholz W. Winkler Y. Yamamoto IHP Frankfurt Germany

We demonstrate SiGe:C pnp HBTs in a complementary bipolar CMOS flow with f/sub T//f/sub max/ values of 80 GHz/120 GHz at BV/sub CEO/ = 2.6 V and a ring oscillator delay of 8.9 ps. The simultaneously fabricated npn HBTs sustain no significant performance loss compared to the npn-only bicmos, confirmed by f/sub T//f/sub max/ values of 180 GHz/185 GHz and a ring oscillator delay of 4.6 ps. A pnp-only bicmos flow produces peak f/sub T//f/sub max/ values for pnp devices of 115 GHz/115 GHz. The high speed performance of the pnp transistors surpasses the best reported values of this transistor type substantially.

关键词： bicmos integrated circuits Heterojunction bipolar transistors Protection Ring oscillators Delay Silicon germanium Germanium silicon alloys CMOS process Oxidation Implants

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