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检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

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State-of-the-art RF/analog foundry technology

State-of-the-art RF/analog foundry technology

引用

bipolar/bicmos circuits and technology meeting

作者： J.C.H. Lin T.H. Yeh C.Y. Lee C.H. Chen J.L. Tsay S.H. Chen H.M. Hsu C.W. Chen C.F. Huang J.M. Chiang A. Chang R.Y. Chang C.L. Chang S.H. Wang C.C. Wu C.Y. Lin Y.L. Chu S.M. Chen C.K. Hsu R.S. Liou S.C. Wong D. Tang J.Y.C. Sun Logic Technology Division Hsinchu Taiwan Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan Acer Laboratories Inc. Taipei Taiwan

We present an overview of the state-of-the-art RF/Analog foundry technology as well as future trends and roadmap. This set of RF/analog technology is built on top of cutting-edge logic technology platforms and it enables cost-effective and fast-time-to-market/volume system-on-chip (SoC) applications, including the rapidly growing wireless-LAN (WLAN) and Blue tooth products in addition to traditional consumer and communication products. Results from 0.18 /spl mu/m- to 0.13 /spl mu/m-generation mixed-signal and RF CMOS technology, and SiGe bicmos technology are highlighted. Special optimization of active devices and precision high-Q components is also illustrated.

关键词： Radio frequency Foundries CMOS technology CMOS logic circuits System-on-a-chip Wireless LAN Bluetooth Silicon germanium Germanium silicon alloys bicmos integrated circuits

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QUBiC4G: a f/sub T//f/sub max/ = 70/100 GHz 0.25 /spl mu/m low power SiGe-bicmos production technology with high quality passives for 12.5 Gb/s optical networking and emerging wireless applications up to 20 GHz

QUBiC4G: a f/sub T//f/sub max/ = 70/100 GHz 0.25 /spl mu/m l...

引用

bipolar/bicmos circuits and technology meeting

作者： P. Deixler R. Colclaser D. Bower N. Bell W. De Boer D. Szmyd S. Bardy W. Wilbanks P. Barre M. v Houdt J.C.J. Paasschens H. Veenstra E. v d Heijden J.J.T.M. Donkers J.W. Slotboom Philips Semiconductors Hopewell Junction NY USA Philips Semiconductors RF Competence Center Caen France RF Device Modeling Group Philips Semiconductors Albuquerque NM USA Philips Networking Infrastructure CaenNjmegen Caen France Philips Research Leuven Leuven Belgium Philips IC-Design Research Netherlands

QUBiC4G is a robust very low-power SiGe RF-bicmos technology for emerging wireless and optical networking with NPN f/sub T//f/sub max/ up to 70/100 GHz and BV/sub ceo/ = 2.7 V, excellent substrate isolation, 0.25 /spl mu/m CMOS, full suite of high quality passives, 5 metal layers and an advanced design flow. We present a 12.5 Gb/s optical networking crosspoint switch and a low-noise 20 GHz LC-VCO.

关键词： Production Optical fiber networks bicmos integrated circuits CMOS technology Isolation technology High speed optical techniques Voltage Radio frequency Robustness Silicon germanium

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A flexible, low-cost, high performance SiGe:C bicmos process with a one-mask HBT module

A flexible, low-cost, high performance SiGe:C BiCMOS process...

引用

International Electron Devices meeting (IEDM)

作者： D. Knoll K.E. Ehwald B. Heinemann A. Fox K. Blum H. Rucker F. Furnhammer B. Senapati R. Barth U. Haak W. Hoppner J. Drews R. Kurps S. Marschmeyer H.H. Richter T. Grabolla B. Kuck O. Fursenko P. Schley R. Scholz B. Tillack Y. Yamamoto K. Kopke H.E. Wulf D. Wolansky W. Winkler IHP Im Technologicpark 25 Frankfurt (Oder) Germany Leibniz-Institut fur innovative Mikroelektronik Frankfurt an der Oder Brandenburg DE IHP Frankfurt Germany

We demonstrate an extremely simple, flexible, and hence low-cost SiGe:C bicmos process with ample performance for the majority of high volume applications. This technology offers three HBT devices with f/sub T//BV/sub CEO/ values of 28 GHz/67 GHz/7.5 V; 52 GHz/98 GHz/3.8 V; and 75 GHz/ 90 GHz/2.4 V by adding only one mask to the underlying CMOS process.

关键词： bicmos integrated circuits Heterojunction bipolar transistors CMOS technology CMOS process Implants Artificial intelligence Lithography Fabrication Silicon germanium Germanium silicon alloys

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A DCS1800/GSM900 RF to digital fully integrated receiver in SiGe 0.35um bicmos

A DCS1800/GSM900 RF to digital fully integrated receiver in ...

引用

bipolar/bicmos circuits and technology meeting

作者： Belot, D Bonhoure, B Saias, D Bertholet, N STMicroelect F-38926 Crolles France

The presentation will detail a 0.35um SiGe bicmos RF to digital base band monochip for DCS 1800/GSM900 standard. Linked to this design, a substrate coupling study has been developed in order to prevent noise substrate... 详细信息

ISBN: (纸本)0780370198

关键词： CMOS integrated circuits

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The optimization of LBC6 Power/Mixed-Signal ICbicmos process

The optimization of LBC6 Power/Mixed-Signal ICBiCMOS process

引用

bipolar/bicmos circuits and technology meeting

作者： Nehrer, W Brito, JC DeBolske, T Efland, T Fleischmann, P Hannaman, D Higgins, R Hutter, L McNutt, M Mindricelu, E Pendharkar, S Smith, J Taylor, RV Texas Instruments Inc Mixed Signal Proc Dev Santa Cruz CA 95060 USA

ISBN: (纸本)0780370198

A 30V, 0.5mum, triple level metal (TLM) + thick top copper metal, Power-bicmos technology for Hard Disk Drive Servo applications is described. Based on a die area analysis, a vital few components and process features were optimized over the prior generation process, resulting in a 40% die size reduction for typical products. Insight into this optimization effort is provided.

关键词： Area Analysis bicmos bicmos technology die size disc drives Size reduction Servo Metals

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Architecture and technology for multistandard transceivers

Architecture and technology for multistandard transceivers

引用

bipolar/bicmos circuits and technology meeting

作者： Mattisson, S Ericsson Mobile Commun AB Adv Studies Res Grp Lund Sweden

ISBN: (纸本)0780370198

The challenges for multi-standard high-end and low-cost cellular handsets axe discussed. The homodyne architecture is proven for dual-mode GSM handsets and is a promising candidate for combined GSM and UMTS handsets. The technology choices are limited to CMOS for the baseband and if this is to be used for RIP as well important changes in the design-kit and process development has to take place. If these changes cannot be implemented, bicmos will be the prefered RF technology. Parametric yield and flexibility are also issues for single-chip transceivers.

关键词： ARCHITECTURE Building construction choice of technology Transceivers bicmos Baseband radiofrequency PROCESS DEVELOPMENT

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0.18 μm SiGebicmos technology for wireless and 40 Gb/s communication products

0.18 μm SiGeBiCMOS technology for wireless and 40 Gb/s comm...

引用

bipolar/bicmos circuits and technology meeting

作者： Schuegraf, K Racanelli, M Kalburge, A Shen, B Hu, C Chapek, D Howard, D Quon, D Feiler, D Dornisch, D U'Ren, G Abdul-Ridha, H Zheng, J Zhang, JS Bell, K Ring, K Yin, K Joshi, P Akhtar, S Lee, T Kempf, P Silicon RF Platform Conexant Syst Newport Beach CA 92660 USA

ISBN: (纸本)0780370198

A 0.18 mum SiGe bicmos process optimized for wireless and 40 Gb/s networking applications is described. bipolar performance of 130 GHz (F,) and 150 GHz (F-max) is reported. Exceptional LNA characteristics have been measured with 2.5 GHz NFmin of 0.83 dB and MAG of 19.7 dB drawing only 1.5 mA of collector current. A metal thin-film resistor, metal-insulator-metal capacitor and two layers of thick Cu help provide low-loss passive components.

关键词： CMOS integrated circuits

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QUBiC4: A silicon RF-bicmos technology for wireless communication ICs

QUBiC4: A silicon RF-BiCMOS technology for wireless communic...

引用

bipolar/bicmos circuits and technology meeting

作者： Szmyd, D Brock, R Bell, N Harker, S Patrizi, G Fraser, J Dondero, R Philips Semicond Albuquerque NM 87113 USA

QUBiC4 is a silicon RF-bicmos technology with NPNf f(t)/f(max) up to 40/100 GHz, 0.25 mum CMOS, high quality passives, and five metal layers for wireless applications. LNA noise figure of 0.99 dB at 2 GRz has been ach... 详细信息

ISBN: (纸本)0780370198

关键词： bicmos technology Integrated circuits CARRIER SYSTEM Noise figure

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Proceedings of the 1999 bipolar/bicmos circuits and technology meeting

Proceedings of the 1999 Bipolar/BiCMOS circuits and technolo...

引用

bipolar/bicmos circuits and technology meeting

Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original conference proceedings.

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Introduction to 1998 bipolar/bicmos circuits and technology meeting

引用

IEEE Journal of Solid-State circuits 1999年第9期34卷 1270-1271页

作者： J.R. Long

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