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A 0.18μm bicmos technology featuring 120/100 GHz (ft/fmax) HBT and ASIC-compatible CMOS using copper interconnect

A 0.18μm BiCMOS technology featuring 120/100 GHz (ft/fmax) ...

引用

2001 bipolar/bicmos circuits and technology meeting

作者： Joseph, A. Coolbaugh, D. Zierak, M. Wuthrich, R. Geiss, P. He, Z. Liu, X. Orner, B. Johnson, J. Freeman, G. Ahlgren, D. Jagannathan, B. Lanzerotti, L. Ramachandran, V. Malinowski, J. Chen, H. Chu, J. Gray, P. Johnson, R. Dunn, J. Subbanna, S. Schonenberg, K. Harame, D. Groves, R. Watson, K. Jadus, D. Meghelli, M. Rylyakov, A. IBM Microelectronics Division 1000 River Rd. Essex Junction VT 05452 United States

A bicmos technology is presented that integrates a high performance NPN (fT = 120GHz and fmax = 100GHz), ASIC compatible 0.11μm Leff CMOS, and a full suite of passive elements. Significant HBT performance enhancement compared to the previously published results in [1] has been achieved through further collector and base profile optimization guided by process and device simulations. Base transit time reduction was achieved by simultaneously increasing the Ge ramp and by limiting the base diffusion with the addition of carbon doping to SiGe epitaxial base. This paper describes IBM's next generation SiGe bicmos production technology targeted at the communications market.

关键词： CMOS integrated circuits

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Architecture and technology for multistandard transceivers

Architecture and technology for multistandard transceivers

引用

bipolar/bicmos circuits and technology meeting

作者： S. Mattisson Ericsson Mobile Communications AB Sweden

The challenges for multi-standard high-end and low-cost cellular handsets are discussed. The homodyne architecture is proven for dual-mode GSM handsets and is a promising candidate for combined GSM and UMTS handsets. The technology choices are limited to CMOS for the baseband and if this is to be used for RF as well important changes in the design-kit and process development has to take place. If these changes cannot be implemented, bicmos will be the preferred RF technology. Parametric yield and flexibility are also issues for single-chip transceivers.

关键词： Transceivers CMOS technology Telephone sets GSM Radio frequency 3G mobile communication CMOS process Baseband Process design bicmos integrated circuits

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QUBiC4: a silicon RF-bicmos technology for wireless communication ICs

QUBiC4: a silicon RF-BiCMOS technology for wireless communic...

引用

bipolar/bicmos circuits and technology meeting

作者： D. Szmyd R. Brock N. Bell S. Harker G. Patrizi J. Fraser R. Dondero Philips Semiconductors Albuquerque NM USA

QUBiC4 is a silicon RF-bicmos technology with NPN f/sub t//f/sub max/ up to 40/100 GHz, 0.25 /spl mu/m CMOS, high quality passives, and five metal layers for wireless applications. LNA noise figure of 0.99 dB at 2 GHz... 详细信息

关键词： Silicon Communications technology Wireless communication Implants Inductors CMOS technology CMOS process Integrated circuit interconnections Capacitance Noise figure

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A DCS1800/GSM900 RF to digital fully integrated receiver in SiGe 0.35 /spl mu/m bicmos

A DCS1800/GSM900 RF to digital fully integrated receiver in ...

引用

bipolar/bicmos circuits and technology meeting

作者： D. Belot B. Bonhoure D. Saias N. Bertholet STMicroelectronics Crolles France

The authors describe a 0.35 /spl mu/m SiGe bicmos RF to digital base band monochip for the DCS1800/GSM900 standard. Linked to this design, a substrate coupling study has been developed in order to prevent a noisy subs... 详细信息

关键词： Radio frequency Silicon germanium Germanium silicon alloys bicmos integrated circuits Packaging Noise figure Impedance Noise measurement Distributed control Switches

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Low-voltage low-power topology for high-speed applications

Low-voltage low-power topology for high-speed applications

引用

bipolar/bicmos circuits and technology meeting

作者： N. Foroudi S. Fulga P. Suppiah J.N.M. Peirce Research In Motion Ottawa Canada SiGe Semiconductor Ottawa Ontario Canada IceFyre Semiconductor Ottawa Canada

A low-voltage low-power logic architecture is introduced that uses capacitors to enhance high-frequency performance. A divide-by-32/33 bicmos dual-modulus frequency divider based on the proposed architecture operates at 2.5 GHz with a 3.15 mW power consumption from a 1.65 V power supply. Simulations show that, compared to conventional bipolar current-mode logic (CML) with the same supply current, the proposed architecture can operate at lower supply voltages.

关键词： Topology MOS devices Low voltage Operational amplifiers Energy consumption Logic devices Tail Impedance Capacitors bicmos integrated circuits

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The optimization of LBC6 power/mixed-signal IC bicmos process

The optimization of LBC6 power/mixed-signal IC BiCMOS proces...

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bipolar/bicmos circuits and technology meeting

作者： W. Nehrer J.C. Brito T. DeBolske T. Efland P. Fleischmann D. Hannaman R. Higgins L. Hutter M. McNutt E. Mindricelu S. Pendharkar J. Smith R.V. Taylor Mixed Signal Process Development Texas Instruments Inc. Dallas TX USA Mixed Signal Process Development Texas Instruments Inc. Dallas Texas Santa Cruz CA USA Power Management Products Technology Texas Instruments Inc. Dallas Texas Santa Cruz CA USA

ISBN: (纸本)0780370198

A 30 V, 0.5 /spl mu/m, triple level metal (TLM) + thick top copper metal, power-bicmos technology for Hard Disk Drive (HDD) servo applications is described. Based on a die area analysis, a vital few components and process features were optimized over the prior-generation process, resulting in a 40% die size reduction for typical products. Insight into this optimization effort is provided.

关键词： bicmos integrated circuits Optimized production technology CMOS technology Isolation technology Costs Process design Bonding Product design Voltage Signal processing

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0.18 /spl mu/m SiGe bicmos technology for wireless and 40 Gb/s communication products

0.18 /spl mu/m SiGe BiCMOS technology for wireless and 40 Gb...

引用

bipolar/bicmos circuits and technology meeting

作者： K. Schuegraf M. Racanelli A. Kalburge B. Shen Chun Hu D. Chapek D. Howard D. Quon D. Feiler D. Dornisch G. U'Ren H. Abdul-Ridha Jie Zheng Jinshu Zhang K. Bell K. Ring K. Yin P. Joshi S. Akhtar T. Lee P. Kempf Silicon RF Platform Conexant Systems Inc. Newport Beach CA USA

A 0.18 /spl mu/m SiGe bicmos process optimized for wireless and 40 Gb/s networking applications is described. bipolar performance of 130 GHz (F/sub t/) and 150 GHz (F/sub max/) is reported. Exceptional LNA characteristics have been measured with 2.5 GHz NF/sub min/ of 0.83 dB and MAG of 19.7 dB drawing only 1.5 mA of collector current. A metal thin-film resistor, metal-insulator-metal capacitor and two layers of thick Cu help provide low-loss passive components.

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits Implants CMOS process Copper Resistors Electromigration Capacitance Inductors

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A 0.18 /spl mu/m bicmos technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/...

引用

bipolar/bicmos circuits and technology meeting

作者： A. Joseph D. Coolbaugh M. Zierak R. Wuthrich P. Geiss Z. He X. Liu B. Orner J. Johnson G. Freeman D. Ahlgren B. Jagannathan L. Lanzerotti V. Ramachandran J. Malinowski H. Chen J. Chu P. Gray R. Johnson J. Dunn S. Subbanna K. Schonenberg D. Harame R. Groves K. Watson D. Jadus M. Meghelli A. Rylyakov Microelectronics Division IBM Essex Junction VT USA NY USA IBM Thomas J. Watson Research Center Yorktown Heights NY USA

A bicmos technology is presented that integrates a high performance NPN (f/sub T/=120 GHz and f/sub max/=100 GHz), ASIC compatible 0.11 /spl mu/m L/sub eff/ CMOS, and a full suite of passive elements. Significant HBT performance enhancement compared to previously published results has been achieved through further collector and base profile optimization guided by process and device simulations. Base transit time reduction was achieved by simultaneously increasing the Ge ramp and by limiting the base diffusion with the addition of carbon doping to SiGe epitaxial base. This paper describes IBM's next generation SiGe bicmos production technology targeted at the communications market.

关键词： bicmos integrated circuits CMOS technology Heterojunction bipolar transistors Silicon germanium Germanium silicon alloys Boron CMOS process Implants Doping Resistors

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RF bipolar transistors in CMOS compatible technologies

RF bipolar transistors in CMOS compatible technologies

引用

IEEE Hong Kong Electron Devices meeting

作者： I.-S.M. Sun Wai Tung Ng P.K.T. Mok H. Mochizuki K. Shinomura H. Imai A. Ishikawa N. Saito K. Miyashita S. Tamura K. Takasuka University of Toronto Toronto ON CA Dept. of Elec. & Comp. Engineering University of Toronto Toronto ONT Elec. Engineering Hong Kong University of Science and Technology Kowloon China Asahi Kasei Microsystems Company Limited Atsugi Kanagawa Japan

A RF bipolar transistor integrated into a standard 0.35 /spl mu/m CMOS process is presented. This bicmos technology features a single-poly NPN transistor with simulated f/sub /spl tau//=16 GHz and BV/sub CEO/=6.4 V. With implanted base and no trench isolation, this device is truly compatible with standard CMOS technology and offers good performance compared to previously published results of bicmos technologies.

关键词： CMOS technology Radio frequency bipolar transistors CMOS process Isolation technology bicmos integrated circuits Silicon Implants Substrates Baseband

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A technology simulation methodology for AC-performance optimization of SiGe HBTs

A technology simulation methodology for AC-performance optim...

引用

International Electron Devices meeting (IEDM)

作者： J.B. Johnson A. Stricker A.J. Joseph J.A. Slinkman IBM Microelectronics Essex Junction VT USA

A methodology for simultaneous calibration of SiGe HBT process and device simulation is presented and applied to SiGe bicmos HBTs with peak cut-off frequencies ranging from 100 GHz to 200 GHz. Predictive simulation ca... 详细信息

关键词： Optimization methods Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Calibration CMOS technology bicmos integrated circuits Predictive models CMOS process Boron

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