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bipolar/bicmos circuits and technology meeting

作者： S. Voldman P. Juliano N. Schmidt A. Botula R. Johnson L. Lanzerotti N. Feilchenfeld J. Joseph J. Malinowski E. Eld V. Gross C. Brennan J. Dunn D. Harame D. Herman B. Meyerson IBM Microelectronics Division IBM Communications Research and Development Center Essex Junction VT USA IBM Thomas J. Watson Research Center Yorktown Heights NY USA Department of Elec. and Computer Eng. University of Illinois Urbana-Champaign USA

High current characterization of epitaxial-base pseudomorphic silicon germanium heterojunction npn bipolar transistors (HBT) for evaluation of the electrostatic discharge (ESD) robustness is reported. bicmos active an... 详细信息

关键词： Electrostatic discharge Robustness bicmos integrated circuits Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Space vector pulse width modulation Voltage Substrates Implants

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A 0.35 /spl mu/m SiGe bicmos process featuring a 80 GHz f/sub max/ HBT and integrated high-Q RF passive components

A 0.35 /spl mu/m SiGe BiCMOS process featuring a 80 GHz f/su...

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bipolar/bicmos circuits and technology meeting

作者： S. Decoutere F. Vleugels R. Kuhn R. Loo M. Caymax S. Jenei J. Croon S. Van Huylenbroeck M. Da Rold E. Rosseel P. Chevalier P. Coppens IMEC Leuven Belgium Alcatel Microelectronics Oudenaarde Belgium

A SiGe HBT, fabricated by means of selective epitaxy, and high-Q RF passive components have been integrated into a 0.35 /spl mu/m bicmos process. The HBT features an f/sub T/ of 50 GHz and f/sub max/ of 80 GHz at V/sub BC/=2 V. The npn transistors are integrated in a 0.35 /spl mu/m CMOS process with poly resistors, MIM capacitors and thick metal 4 on chip spiral inductors.

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits Heterojunction bipolar transistors Epitaxial growth Radio frequency CMOS process Resistors MIM capacitors Spirals

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Complementary 25 V LDMOS for analog applications based on 0.6 /spl mu/m bicmos technology

Complementary 25 V LDMOS for analog applications based on 0....

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bipolar/bicmos circuits and technology meeting

作者： K. Nakamura Y. Kawaguchi K. Karouji K. Watanabe Y. Yamaguchi A. Nakagawa Discrete Semiconductor Division Toshiba Corporation Semiconductor Company Japan Advanced Discrete Semiconductor Technology Laboratory Toshiba Corporation Japan System LSI Division Toshiba Corporation Semiconductor Company Kawasaki Japan

A complementary 25 V LDMOS for analog applications based on 0.6 /spl mu/m bicmos technology has been developed. The n-channel LDMOS has two-step shallow n-implant layers which achieve low on-resistance and large safe operation area (SOA). The n-channel and p-channel LDMOS achieve high on-state breakdown voltages of 33 V and 50 V, respectively, for a gate voltage of 5.0 V. The values of specific on-resistance are 27.5 m/spl Omega//spl middot/mm/sup 2/ for n-channel and 111 m/spl Omega//spl middot/mm/sup 2/ for p-channel LDMOS.

关键词： bicmos integrated circuits Implants Degradation Electrons Large scale integration Laboratories Facsimile Breakdown voltage MOSFETs Application software

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Integrated transceivers for digital cordless applications

Integrated transceivers for digital cordless applications

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bipolar/bicmos circuits and technology meeting

作者： S. Heinen RF IC Group Design Center Düsseldorf Infineon Technologies Germany

Over the last decade, the RF-IC integration level has shown significant progress, specially for cordless applications. At present, these applications are DECT, DECT on 2.4 GHz and Bluetooth. An overview of the evolution of the RF integration level is presented. Starting from a building block solution back in the early 1990s, the single conversion concept has been pushed to a trim-less single chip radio. Recent developments are enabling an advanced "single conversion" solution, replacing the SAW filter by a low-IF integrated active filter. Single chip implementations of the low-IF approach suitable for DECT, Bluetooth and other 2.4 GHz systems are presented.

关键词： Transceivers Radio frequency bicmos integrated circuits Bluetooth SAW filters Active filters Ceramics Costs Bandwidth Radio spectrum management

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A low-cost modular SiGe bicmos technology and analog passives for high-performance RF and wide-band applications

A low-cost modular SiGe BiCMOS technology and analog passive...

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bipolar/bicmos circuits and technology meeting

作者： R. Tang C. Leung D. Nguyen T. Hsu L. Fritzinger S. Molloy T. Esry T. Ivanov J. Chu M. Carroll J. Huang W. Moller T. Campbell W. Cochran C. King M. Frei M. Mastrapasqua K. Ng C. Chen R. Johnson R. Pullela V. Archer J. Krska S. Moinian H. Cong Bell Laboratories Lucent Technologies Inc. Orlando FL USA Bell Laboratories Lucent Technologies Inc. Murray Hill NJ USA

We present a low-cost 0.25 /spl mu/m SiGe bicmos technology that is being manufactured in an 8-inch production line. The technology includes modules for super-self-aligned (SSA) SiGe transistors, poly resistors, metal-oxide-metal (MOM) capacitors and thick-metal inductors added to a CMOS core process without any change to the CMOS process. With the independently developed modules and a high-energy implanted collector buried layer, SiGe bipolar devices with a maximum f/sub T/ of 72 GHz and f/sub max/ of 116 GHz, and thick metal inductors with Q/spl ges/15 have been produced. Using this technology, IC chips fabricated have demonstrated essential optical network interface functions with 4:1 MUX and 1:4 DEMUX circuits operated at 10 Gb/s, and limiting amplifiers performing at 20 Gb/s.

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits CMOS technology Inductors CMOS process Manufacturing Production Resistors Message-oriented middleware

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A 73 GHz f/sub T/ 0.18 /spl mu/m RF-SiGe bicmos technology considering thermal budget trade-off and with reduced boron-spike effect on HBT characteristics

A 73 GHz f/sub T/ 0.18 /spl mu/m RF-SiGe BiCMOS technology c...

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International Electron Devices meeting (IEDM)

作者： T. Hashimoto F. Sato T. Aoyama H. Suzuki H. Yoshida H. Fujii T. Yamazaki ULSI Device Development Div NEC Corporation Limited Sagamihara Kanagawa Japan

ISBN: (纸本)0780364384

This paper describes a 73 GHz f/sub T/ 0.18 /spl mu/m SiGe bicmos technology. This bicmos technology has the following key points: (1) The 2-step annealing technique for CMOS is utilized to solve the thermal budget trade-off between SiGe HBTs and CMOS. (2) A robust Ge profile design is implemented to improve the thermal stability of the SiGe base layer. (3) The Si-spacer layer is inserted between the Si collector and the SiGe base layer in order to reduce undesirable boron-spike effect. This process yields the SiGe HBT with f/sub T/ of 73 GHz and f/sub max/ of 61 GHz without compromising 0.18 /spl mu/m p/sup +//n/sup +/ dual gate CMOS characteristics.

关键词： bicmos integrated circuits Silicon germanium Germanium silicon alloys Electrodes Annealing Boron CMOS technology Heterojunction bipolar transistors Robust stability CMOS process

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COM2 SiGe modular bicmos technology for digital, mixed-signal, and RF applications

COM2 SiGe modular BiCMOS technology for digital, mixed-signa...

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International Electron Devices meeting (IEDM)

作者： M. Carroll T. Ivanov S. Kuehne J. Chu C. King M. Frei M. Mastrapasqua R. Johnson K. Ng S. Moinian S. Martin C. Huang T. Hsu D. Nguyen R. Singh L. Fritzinger T. Esry W. Moller B. Kane G. Abeln D. Hwang D. Orphee S. Lytle M. Roby D. Vitkavage D. Chesire R. Ashton D. Shuttleworth M. Thoma S. Choi S. Lewllen P. Mason T. Lai H. Hsieh D. Dennis E. Harris S. Thomas R. Gregor P. Sana W. Wu Bell Laboratories Lucent Technologies Inc. Orlando FL USA Bell Laboratories Lucent Technologies Inc. Murray Hill NJ USA

ISBN: (纸本)0780364384

The COM2 SiGe modular bicmos technology has been developed to allow efficient design and manufacturing of digital, mixed-signal, and RF integrated circuits, as well as enabling system-on-chip (SOC) integration. The technology is based on the 0.16 /spl mu/m COM2 digital CMOS process which features 1.5 V NMOS and PMOS transistors with 2.4 nm gate oxide, 0.135 /spl mu/m gate length, and up to 7 metal levels. technology enhancement modules including dense SRAM, SiGe NPN bipolar transistor, and a variety of passive components have been developed to allow the COM2 technology to be cost-effectively optimized for a wide range of applications.

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits CMOS technology Integrated circuit technology Integrated circuit manufacture Radio frequency Digital integrated circuits Radiofrequency integrated circuits System-on-a-chip

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A 2.125-Gb/s bicmos fiber channel transmitter for serial data communications

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IEEE JOURNAL OF SOLID-STATE circuits 1999年第9期34卷 1325-1330页

作者： Fukaishi, M Nakamura, S Tajima, A Kinoshita, Y Suemura, Y Suzuki, H Itani, T Miyamoto, H Henmi, N Yamazaki, T Yotsuyanagi, M NEC Corp Ltd Silicon Syst Res Labs Sagamihara Kanagawa 2291198 Japan NEC Corp Ltd ULSI Device Dev Labs Sagamihara Kanagawa 2291198 Japan NEC Corp Ltd C&C Media Res Labs Kawasaki Kanagawa 2168555 Japan

A 2,125-Gb/s transmitter meeting the specifications of the emerging ANSI Fiber Channel standard has been developed using bicmos technology, This transmitter features 1) a fully bipolar 10:1 multiplexer (MUX) and a 2.125-GHz retimer for high-accuracy transmission of data, 2) an emitter-coupled logic (ECL)-CMOS analog phase-locked loop, 3) pure ECL-level output for direct connection to the currently available optical modules, and 4) bicmos process technology that includes 0.25-mu m CMOS devices and 20-GHz bipolar devices, The LSI serializes 32-bit-wide, 53.125-Mb/s data into 2.125-Gb/s data through a CMOS 8B10B encoder. The chip area is 3 x 2 mm(2), and the power dissipation is 860 mW.

关键词： bicmos 8B10B fiber channel multiplexer (MUX) phase-locked loop (PLL) transmitter

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Introduction to the 1996 bipolar/bicmos circuits and technology meeting special issue

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IEEE JOURNAL OF SOLID-STATE circuits 1997年第9期32卷 1410-1411页

作者： Kenneth, O University of Florida

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bicmos6G: a high performance 0.35 μm SiGe bicmos technology for wireless applications

BiCMOS6G: a high performance 0.35 μm SiGe BiCMOS technology...

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Proceedings of the 1999 IEEE bipolar/bicmos circuits and technology meeting (BCTM 1999)

作者： Monroy, A. Laurens, M. Marty, M. Dutartre, D. Gloria, D. Carbonero, J.L. Perrotin, A. Roche, M. Chantre, A. Cent Commun CNET/ST Microelectronics Crolles France

bicmos6G, a 200 mm 0.35 μm SiGe bicmos technology, is presented. This technology features a low complexity double-poly SiGe HBT with 60GHz fmax, added to stand-alone CMOS and high-quality passive components. It is id... 详细信息

关键词： Semiconductor device manufacture

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