bicmos6G, a 200 mm 0.35 μm SiGe bicmostechnology, is presented. This technology features a low complexity double-poly SiGe HBT with 60GHz fmax, added to stand-alone CMOS and high-quality passive components. It is id...
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bicmos6G, a 200 mm 0.35 μm SiGe bicmostechnology, is presented. This technology features a low complexity double-poly SiGe HBT with 60GHz fmax, added to stand-alone CMOS and high-quality passive components. It is ideally suited to the development of highly integrated wireless communications circuits.
A review of bicmos modeling from a RF designer's point of view is presented. Pitfalls of standard models are shown in the context of modern device design. A few circuit examples are presented to illustrate the imp...
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A review of bicmos modeling from a RF designer's point of view is presented. Pitfalls of standard models are shown in the context of modern device design. A few circuit examples are presented to illustrate the impact of device modeling on RF IC Design.
Design tradeoffs for the optimization of inductor Q have been analyzed, and thick metallization has been identified as the most promising technology enhancement. Peak Qs approaching 19 have been demonstrated using thi...
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Design tradeoffs for the optimization of inductor Q have been analyzed, and thick metallization has been identified as the most promising technology enhancement. Peak Qs approaching 19 have been demonstrated using thick metal.
Design of a compact square-cell, dual-direction ESD protection structure for bicmos IC's is reported. Detail design features, such as, improved current uniformity, high-ESD protection level (> 14KV HBM), high-E...
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Design of a compact square-cell, dual-direction ESD protection structure for bicmos IC's is reported. Detail design features, such as, improved current uniformity, high-ESD protection level (> 14KV HBM), high-ESDV/Si ratio (approx. 1.66V/μm2), and adjustable trigger voltage are discussed.
By using a newly proposed structure of the multi-via MIM capacitor, amorphous Ta2O5 films were investigated. Amorphous Ta2O5 with our proposed structure is one of the suitable combinations for the capacitors for RF an...
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By using a newly proposed structure of the multi-via MIM capacitor, amorphous Ta2O5 films were investigated. Amorphous Ta2O5 with our proposed structure is one of the suitable combinations for the capacitors for RF analog applications.
This paper presents a 20-channel, 4.850-5.325 GHz PLL-based frequency synthesizer implemented in a production SiGe bicmostechnology. The circuit is fully integrated, including the loop filter capacitor and VCO. A fas...
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This paper presents a 20-channel, 4.850-5.325 GHz PLL-based frequency synthesizer implemented in a production SiGe bicmostechnology. The circuit is fully integrated, including the loop filter capacitor and VCO. A fast settling time of 10 μsec is measured with a reference frequency of 12.5 MHz. Wafer-level tests indicate a phase noise below -100 dBc/Hz at a 1-MHz offset. The chip dissipates 255 mW from a 3.3-V supply and occupies an active area of 2 mm2.
BC35, a 0.35 μm RF bicmos production process on 200 mm wafers is described. BC35 includes 0.35 μm CMOS, RF passive elements and two NPNs with peak Ft of 32 and 23 GHz, peak Fmax of 74 and 50 GHz and BVceo of 3.8 and...
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BC35, a 0.35 μm RF bicmos production process on 200 mm wafers is described. BC35 includes 0.35 μm CMOS, RF passive elements and two NPNs with peak Ft of 32 and 23 GHz, peak Fmax of 74 and 50 GHz and BVceo of 3.8 and 6.2 V respectively. Enhancements to this production process are also described including the addition of a SiGe epi base to increase peak Ft to 53 GHz and the reduction of emitter width to achieve a 2 GHz NFmin of 0.69 dB.
A 0.16μm modular bicmostechnology (COM2-bicmos) has been developed for radio-frequency communication ICs. The technology includes a low-cost, high-performance, single-poly NPN bipolar transistor with fT=45GHz and BV...
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A 0.16μm modular bicmostechnology (COM2-bicmos) has been developed for radio-frequency communication ICs. The technology includes a low-cost, high-performance, single-poly NPN bipolar transistor with fT=45GHz and BVCEO=4.0V. With a fT·BVCEO product of 180GHz-V, the bipolar transistor performance in COM2-bicmos is comparable to many double-poly Si or SiGe transistors without the additional process complexity and cost.
A new base-after-gate integration scheme has been developed to integrate a 47 GHz ft, 65 GHz Fmax SiGe HBT process with a 0.24 μm CMOS technology having 0.18 μm Leff and 5 nm gate oxide. We'll discuss the benefi...
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A new base-after-gate integration scheme has been developed to integrate a 47 GHz ft, 65 GHz Fmax SiGe HBT process with a 0.24 μm CMOS technology having 0.18 μm Leff and 5 nm gate oxide. We'll discuss the benefits and challenges of this integration scheme which decouples the HBT from the CMOS thermal cycles. We'll also describe the resulting 0.24 μm SiGe bicmostechnology, bicmos 6HP, which includes a 7 nm dual gate oxide option and full suite of passive components. The technology provides a high level of integration for mixed-signal RF applications.
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