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Proceedings of the 1997 bipolar/bicmos circuits and technology meeting

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technolo...

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bipolar/bicmos circuits and technology meeting

Presents the front cover of the proceedings record.

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bicmos6G: a high performance 0.35 /spl mu/m SiGe bicmos technology for wireless applications

BiCMOS6G: a high performance 0.35 /spl mu/m SiGe BiCMOS tech...

引用

bipolar/bicmos circuits and technology meeting

作者： A. Monroy W. Laurens M. Marty D. Dutartre D. Gloria J.L. Carbonero A. Perrotin M. Roche A. Chantre Centre Commun CNET STMicroelectronics Crolles France

bicmos6G, a 200 mm 0.35 /spl mu/m SiGe bicmos technology, is presented. This technology features a low complexity double-poly SiGe HBT with 60 GHz f/sub max/, added to stand-alone CMOS and high-quality passive compone... 详细信息

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits CMOS technology Heterojunction bipolar transistors CMOS process Integrated circuit technology Implants Epitaxial growth bipolar transistors

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Very low cost graded SiGe base bipolar transistors for a high performance modular bicmos process

Very low cost graded SiGe base bipolar transistors for a hig...

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1999 IEEE International Devices meeting (IEDM)

作者： King, C.A. Frei, M.R. Mastrapasqua, M. Ng, K.K. Kim, Y.O. Johnson, R.W. Moinian, S. Martin, S. Cong, H.-I. Klemens, F.P. Tang, R. Nguyen, D. Hsu, T.-I. Campbell, T. Molloy, S.J. et. al. Bell Lab Murray Hill United States

We report a new super self-aligned graded SiGe base transistor that uses high energy implantation, rather than epitaxial growth, to form the sub-collector region. This new inexpensive process yields a device with fT of 52 GHz and fmax of 70 GHz with the addition of only 4 lithography levels over our 0.25 μm CMOS technology without any changes to the existing process steps. Also, we demonstrate 4:1 multiplexer and 1:4 demultiplexer circuits using this technology that show excellent performance at 10 Gbit/s.

关键词： bipolar transistors

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bicmos device modeling for RF IC design

BiCMOS device modeling for RF IC design

引用

bipolar/bicmos circuits and technology meeting

作者： C. Hull S.V. Kishore Silicon Wave Inc. San Diego CA USA

A review of bicmos modeling from a RF designer's point of view is presented, Pitfalls of standard models are shown in the context of modern device design. A few circuit examples are presented to illustrate the imp... 详细信息

关键词： bicmos integrated circuits Integrated circuit modeling Radio frequency Radiofrequency integrated circuits Admittance MOSFETs Circuit synthesis Threshold voltage Capacitance Current density

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A compact square-cell ESD structure for bicmos IC

A compact square-cell ESD structure for BiCMOS IC

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bipolar/bicmos circuits and technology meeting

作者： A.Z. Wang C.H. Tsay Department of ECE Illinois Institute of Technology Chicago IL USA National Semiconductor Corporation Santa Clara CA USA

Design of a compact square-cell, dual-direction ESD protection structure for bicmos ICs is reported. Detailed design features, such as, improved current uniformity, high-ESD protection level (>14 kV HBM), high-ESDV... 详细信息

ISBN: (纸本)0780357132

关键词： bicmos integrated circuits Electrostatic discharge Threshold voltage Plugs Switches Partial discharges Surge protection Semiconductor diodes Impedance Equivalent circuits

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Merits and requirements of a few RF architectures

Merits and requirements of a few RF architectures

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bipolar/bicmos circuits and technology meeting

作者： P.C. Davis Bell Laboratories Lucent Technologies Inc. Reading PA USA

In a cellular radio, as in any system, the architecture determines the quantity and quality of bipolar and bicmos content. Requirements and merits of a few transmitter and receiver architectures are discussed. Some of these, such as single IF, are in handsets selling by the millions every year. Some, such as direct conversion at the antenna, remain in the planning stages because of the present state of A/D technology.

关键词： Magneto electrical resistivity imaging technique Radio frequency GSM Active filters Surface acoustic waves RF signals Mixers Land mobile radio cellular systems bicmos integrated circuits Radio transmitters

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High Q inductors in a SiGe BiMOS process utilizing a thick metal process add-on module

High Q inductors in a SiGe BiMOS process utilizing a thick m...

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bipolar/bicmos circuits and technology meeting

作者： R. Groves J. Malinowski R. Volant D. Jadus IBM Microelectronics Hopewell Junction NY USA

Design tradeoffs for the optimization of inductor Q have been analyzed, and thick metallization has been identified as the most promising technology enhancement. Peak Qs approaching 19 have been demonstrated using thi... 详细信息

关键词： Inductors Silicon germanium Germanium silicon alloys bicmos integrated circuits Dielectric substrates Spirals Metallization Radio frequency Conductivity Radiofrequency integrated circuits

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A fully-integrated 5-GHz frequency synthesizer in SiGe bicmos

A fully-integrated 5-GHz frequency synthesizer in SiGe BiCMO...

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bipolar/bicmos circuits and technology meeting

作者： H. Ainspan M. Soyuer IBM Thomas J. Watson Research Center Yorktown Heights NY USA

This paper presents a 20-channel, 4.850-5.325 GHz PLL-based frequency synthesizer implemented in a production SiGe bicmos technology. The circuit is fully integrated, including the loop filter capacitor and VCO. A fast settling time of 10 /spl mu/s is measured with a reference frequency of 12.5 MHz. Wafer-level tests indicate a phase noise below -100 dBc/Hz at a 1 MHz offset. The chip dissipates 255 mW from a 3.3 V supply and occupies an active area of 2 mm/sup 2/.

关键词： Frequency synthesizers Silicon germanium Germanium silicon alloys bicmos integrated circuits Production Integrated circuit technology Filters Capacitors Voltage-controlled oscillators Frequency measurement

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A fully integrated 3 V 2.3 GHz synchronous oscillator for WLAN applications

A fully integrated 3 V 2.3 GHz synchronous oscillator for WL...

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bipolar/bicmos circuits and technology meeting

作者： F. Badets Y. Deval J.-B. Begueret A. Spataro P. Fouillat Laboratoire IXL CNRS UMR 5818 Université Bordeaux 1 Talence France

In order to fully integrate a low power, low phase noise frequency synthesizer, a 2.3 GHz synchronous oscillator has been fully implemented on a 0.8 /spl mu/m, two metal layer standard bicmos technology. It is able to lock on a subharmonic external signal and its locking range is about 40 MHz for a 400 MHz injected signal. The oscillator and its synchronization circuit consume less than 14 mA on a 3 V battery.

关键词： Oscillators Wireless LAN Frequency synthesizers Frequency synchronization Phase noise Phase locked loops Frequency conversion Frequency locked loops bicmos integrated circuits Batteries

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High performance MIM capacitor for RF bicmos/CMOS LSIs

High performance MIM capacitor for RF BiCMOS/CMOS LSIs

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bipolar/bicmos circuits and technology meeting

作者： T. Yoshitomi Y. Ebuchi H. Kimijama T. Ohguro E. Morifuji H.S. Momose K. Kasai K. Ishimaru F. Matsuoka Y. Katsumata M. Kinugawa H. Iwai Microelectronics Engineering Laboratory Toshiba Corporation Japan Semiconductor Advanced Process Engineering Department Toshiba Corporation Yokohama Japan Tokyo Institute of Technology Yokohama Japan

Using a newly proposed structure of the multi-via MIM capacitor, amorphous Ta/sub 2/O/sub 5/ films were investigated. Amorphous Ta/sub 2/O/sub 5/ with the proposed structure is one of the suitable combinations for the... 详细信息

关键词： MIM capacitors Radio frequency bicmos integrated circuits Large scale integration Sputtering Dielectric films Electrodes Annealing Fluid flow CMOS process

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