In this paper we demonstrate the potential use of a germanium p-i-n diode, available without additional processing effort in a photonic bicmostechnology, for electronic applications. A cut-off frequency above 400 GHz...
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ISBN:
(纸本)9781509004850
In this paper we demonstrate the potential use of a germanium p-i-n diode, available without additional processing effort in a photonic bicmostechnology, for electronic applications. A cut-off frequency above 400 GHz was obtained by S-parameter measurements without any certain design optimization of the diode. The device construction on SOI yields in the isolation of the diode from the substrate. Moreover, the lateral current flow enables low series resistance for the diode. Potential applications are antenna-switching or mixers.
In this paper we present a high sensitivity total power radiometer front-end integrated in a 0.25 μm SiGe bicmostechnology. The radiometer consists of a two-stage LNA co-integrated with a common-emitter square-law d...
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ISBN:
(纸本)9781509004850
In this paper we present a high sensitivity total power radiometer front-end integrated in a 0.25 μm SiGe bicmostechnology. The radiometer consists of a two-stage LNA co-integrated with a common-emitter square-law detector. Together these stages provide a peak responsivity of 61 MV/W and a 6 GHz system bandwidth around 56 GHz. An optimized non-50-Ohm impedance interface between the LNA and the detector results in an improved system responsivity and sensitivity. Furthermore, the use of a large area load resistor in the detector results in a sub-300 Hz noise corner. Combining the peak responsivity with the 194 nV/√Hz noise floor at the output results in a minimum NEP of 3.2 fW/√Hz at 300 Hz.
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