Recording experiments on Super-RENS mask were done for color (multi-wavelength) digital datastorage at various recording conditions. Through SEM, the recording marks were found reduced down notably. These micrograms ...
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ISBN:
(纸本)0819447196
Recording experiments on Super-RENS mask were done for color (multi-wavelength) digital datastorage at various recording conditions. Through SEM, the recording marks were found reduced down notably. These micrograms were studied fully, and the results forcefully demonstrate the super-resolution recording effect in Super-RENS.
The present general status and future trends in the digital video datastorage and computer datastorage markets are first explained. The role of opticaldatastorage devices for storing the digital video data and com...
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ISBN:
(纸本)0780330293
The present general status and future trends in the digital video datastorage and computer datastorage markets are first explained. The role of opticaldatastorage devices for storing the digital video data and computer data is then briefly discussed and compared with several other storage devices. Finally, the future prospects specifically for DVD or Digital Video Disc and related technologies are explained.
The state of the art of silicon optoelectronic integrated circuits (OEICs) is described. It is verified that silicon OEICs achieve both high sensitivities and high bandwidths up to the GHz range. Silicon OEICs, theref...
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ISBN:
(纸本)0819443395
The state of the art of silicon optoelectronic integrated circuits (OEICs) is described. It is verified that silicon OEICs achieve both high sensitivities and high bandwidths up to the GHz range. Silicon OEICs, therefore, compete successfully with III/V OEICs for low-cost high-volume applications. Results of advanced monolithically integrated photodiodes available in CMOS and BiCMOS technologies are presented. The technological aspects for the monolithic integration of photodiodes are addressed and tile properties of the so-called double photodiode and of the pin photodiode are described. Tile innovative integrated double photodiode allowing data rates of 622 Mb/s is available in standard silicon technologies without any process modification, For the integration of tile pin photodiode allowing data rates of higher than I Gb/s usually at least one additional mask is required. It will be shown that the pin photodiode also can be implemented without an additional mask. The second main part of this article covers circuits of optical fiber and interconnect receivers with data rates of up to 1 Gb/s as well as advanced DVD pick-up OEICs with bandwidths of up to 150 MHz. Tile fiber receivers achieve an effective transimpedance of 45.9 kOmega and the sensitivity of this OEIC in a 1.0 pm CMOS technology with a data rate of 1 Gb/s is improved by 9 dB compared to that of a published OEIC in a 0.35 pm CMOS technolgy.
Phase change materials have been widely applied in opticaldatastorage technique to produce rewritable versions of compact disks and digital versatile disks random access memory and are still promising for higher cap...
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Phase change materials have been widely applied in opticaldatastorage technique to produce rewritable versions of compact disks and digital versatile disks random access memory and are still promising for higher capacity opticaldatastorage. In opticaldatastorage system, laser irradiation is used to write and read information in phase change film. The original phase state of phase change film without annealing is amorphous state. After laser irradiation, the laser energy transferred to phase change film increases temperature to create crystalline features. To study the effects of laser wavelength and fluence on feature fabrication, different kinds of laser systems are used to irradiate non-annealing phase change film to fabricate crystalline features in micro/nano-sizes. Electrical force microscopy and near-field scanning optical microscopy are used to characterize the electrical and optical properties of phase change film, respectively. Two kinds of phase change film, Gel Sb2Te4 and Sb2Te3, are used. Alkaline solution has the ability to etch the amorphous and crystalline states of phase change film selectively. The phase change film patterned by laser irradiation is etched by alkaline solution to fabricate two- and three-dimensional structures. The etching selectivity and rate of alkaline solution for the two phase change films are studied. It provides a novel approach to fabricate new functional micro/nano devices by combining further etching or deposition techniques. (c) 2007 Elsevier B.V. All rights reserved.
Recent advances in opticalstoragetechnology, both two-dimensional and three-dimensional, suggest that optical memories can be used for applications requiring massive archiving volumes. In order to use optical memori...
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ISBN:
(纸本)078033650X
Recent advances in opticalstoragetechnology, both two-dimensional and three-dimensional, suggest that optical memories can be used for applications requiring massive archiving volumes. In order to use optical memories in such applications we need to interface them with electronic computers. Our paper discusses the aspects of this interface design.
The structures for the storage of data in CAD systems influence to a large extent the effectiveness of the system. This paper reviews the wide range of data structures and database management systems (DBMS) available ...
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The structures for the storage of data in CAD systems influence to a large extent the effectiveness of the system. This paper reviews the wide range of data structures and database management systems (DBMS) available for structuring CAD data. Examples of basic data types are drawn from the MODULA-2 language. The relationship between these basic data types, their composite structures and the classical data models (on which many DBMS are based) is discussed, and the limitations of existing DBMS in modelling CAD data highlighted. A set of requirements for CAD database management systems is drawn up and the emerging role of product models (which seek to encapsulate the totality of data elements required to define fully an engineering artefact) is explored. Copyright (C) 1996 Civil-Comp Limited and Elsevier Science Limited.
The first numerical simulator for holographic datastorage using the optical collinear system was developed. The dependency of the Signal to Noise Ratio for media displacement and wavelength shift were calculated and ...
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This paper introduces a method to reconstruct a polarization hologram recorded by dual-channel polarization holography. In this method, simultaneously reconstructed two images with p- and s-polarization components are...
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ISBN:
(纸本)9781628412284
This paper introduces a method to reconstruct a polarization hologram recorded by dual-channel polarization holography. In this method, simultaneously reconstructed two images with p- and s-polarization components are captured by an image sensor with p- and s-polarized plane waves. The principle is explained and numerically verified.
To create and utilize a strong Light source with sub-wavelength size has opened up a new frontier in optics, the near-field optics, One of the most attractive applications of the near-field optics is near-field optica...
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To create and utilize a strong Light source with sub-wavelength size has opened up a new frontier in optics, the near-field optics, One of the most attractive applications of the near-field optics is near-field opticaldatastorage, The optical memory with high density and high data transfer rate is highly demanded to utilize an array of high throughput nano-scaled light sources for writing and reading bits on a medium. In this paper. we propose a hybrid structure of vertical cavity surface emitting laser (VCSEL) and aperture array for optical near-field memory head, namely VCSEL/NSOM. A technological solution for fabrication of the aperture array with Si micromachining technology is presented. An investigation of the optical performance of the near-field light at the apertures of the Si micromachined aperture array is presented. The primary result of writing and reading bits on a phase change (PC) medium using the fabricated structure is demonstrated. (C) 2002 Elsevier Science B.V. All rights reserved.
During the past years, the limited access-times and memory bandwidth in electronic random-access memory (RAM) has triggered a concerted research effort towards deploying optical memory circuitry for exploiting the inh...
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During the past years, the limited access-times and memory bandwidth in electronic random-access memory (RAM) has triggered a concerted research effort towards deploying optical memory circuitry for exploiting the inherent high-bandwidth characteristics of light-based technologies. Yet the deployment of optical memory elements in functional optical RAM demonstrations has still been limited to single-bit capacity levels, with the few multi-bit demonstrations still offering only storage functionality without any true random-access capabilities. In this article, we demonstrate an experimental 16-bit all-optical RAM bank prototype that follows a 4 x 4 matrix organization and supports addressable random access storage of four 4-bit WDM-formatted opticaldata Words at a 20 Gb/s memory-throughput. The proposed architecture constitutes of completely passive Row/Column decoding (RD/CD) subsystems, four Semiconductor optical Amplifier Mach-Zehnder Interferometer (SOA-MZI) Access Gates (AGs) for enabling the access towards the 4 available Word Lines (WLs) and 16 all-optical Flip-Flops (AOFF) arranged in a 4 x 4 RAM bank. Each FF is incorporated in an indicative photonic integrated circuit (PIC). The experimental validation of the complete 16-bit RAM bank reveals error-free operation in Write mode with a peak power penalty between 8.3-10.2 dB at 10(-9) bit-error-rate (BER) measurements, indicating a roadmap for two-dimensional addressable (2D) RAM banks that can penetrate the optical computing application domain.
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