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检索条件"任意字段=Conference on Advances in Resist Technology and Processing XXI"

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Nanoimprint Lithography Performance advances for New Application Spaces

Nanoimprint Lithography Performance Advances for New Applica...

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conference on Novel Patterning Technologies

作者： Ifuku, Toshihiro Yonekawa, Masami Nakagawa, Kazuki Sato, Kazuhiro Saito, Tomohiro Aihara, Sentaro Ito, Toshiki Yamamoto, Kiyohito Hiura, Mitsuru Sakai, Keita Takabayashi, Yukio Canon Inc 20-2 Kiyohara Kogyodanchi Utsunomiya Tochigi 3213292 Japan

ISBN: (纸本)9781510672192;9781510672185

Imprint lithography is an effective and well-known technique for replication of nano-scale features. Nanoimprint lithography (NIL) manufacturing equipment utilizes a patterning technology that involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. The technology faithfully reproduces patterns with a higher resolution and greater uniformity compared to those produced by photolithography equipment. Additionally, as this technology does not require an array of wide-diameter lenses and the expensive light sources necessary for advanced photolithography equipment, NIL equipment achieves a simpler, more compact design, allowing for multiple units to be clustered together for increased productivity. Previous studies have demonstrated NIL resolution better than 10nm, making the technology suitable for the printing of several generations of critical memory levels with a single mask. In addition, resist is applied only where necessary, thereby eliminating material waste. Given that there are no complicated optics in the imprint system, the reduction in the cost of the tool, when combined with simple single level processing and zero waste leads to a cost model that is very compelling for semiconductor memory applications. Memory fabrication is challenging, in particular for DRAM, because the roadmap for DRAM calls for continued scaling, eventually reaching half pitches of 14nm and beyond. For DRAM, overlay on some critical layers is much tighter than NAND Flash, with an error budget of 15-20% of the minimum half pitch. For 14nm, this means 2.1-2.8nm. DRAM device design is also challenging, and layouts are not always conducive to p

关键词： nanoimprint lithography NIL overlay defectivity memory logic ecosystem meta optical elements

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Spin speed impact on photoresist thin film properties and EUV lithographic performance 40

Spin speed impact on photoresist thin film properties and EU...

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conference on advances in Patterning Materials and Processes XL

作者： Cen, Yinjie Lee, ChoongBong Cui, Li Coley, Suzanne M. Park, Jong Keun Naab-Rafael, Benjamin D. Aqad, Emad Rena, Rochelle Paul, Tyler Penniman, Tom Behnke, Jason Early, Julia T. Foltz, Benjamin DuPont Elect & Ind 455 Forest St Marlborough MA 01752 USA DuPont Sci & Innovat 200 Powder Mill Rd Wilmington DE 19803 USA

ISBN: (纸本)9781510661035;9781510661042

Chemically amplified resist (CAR) materials are widely used in advanced node patterning by extreme ultraviolet lithography (EUVL). To support the continuous requirement of reducing critical dimension (CD), CAR has been designed to process at tens of nanometer coating thickness while taking into consideration film roughness, aspect ratio, and etch transfer challenge. In this study, we investigated the impact of the photoresist's different spin speed for same film thickness on resolution, line width roughness, and sensitivity (RLS) trade-off for Line and Space (L/S) patterns. We selected photoresists with identical chemical composition that differed only in total wt solid% in the solution. Photoresist films at constant thickness were investigated for the spin speed impacts on photoresist film density, hydrophobicity on the film surface, and film surface roughness. The corresponding EUV lithographic performance will be presented.

关键词： chemically amplified resist extreme ultraviolet lithography thin film spin-speed photoresist processing conditions

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SOFTS: Efficient Multivariate Time Series Forecasting with Series-Core Fusion 38

SOFTS: Efficient Multivariate Time Series Forecasting with S...

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38th conference on Neural Information processing Systems, NeurIPS 2024

作者： Han, Lu Chen, Xu-Yang Ye, Han-Jia Zhan, De-Chuan School of Artificial Intelligence Nanjing University China National Key Laboratory for Novel Software Technology Nanjing University China

Multivariate time series forecasting plays a crucial role in various fields such as finance, traffic management, energy, and healthcare. Recent studies have highlighted the advantages of channel independence to resist distribution drift but neglect channel correlations, limiting further enhancements. Several methods utilize mechanisms like attention or mixer to address this by capturing channel correlations, but they either introduce excessive complexity or rely too heavily on the correlation to achieve satisfactory results under distribution drifts, particularly with a large number of channels. Addressing this gap, this paper presents an efficient MLP-based model, the Series-cOre Fused Time Series forecaster (SOFTS), which incorporates a novel STar Aggregate-Redistribute (STAR) module. Unlike traditional approaches that manage channel interactions through distributed structures, e.g., attention, STAR employs a centralized strategy to improve efficiency and reduce reliance on the quality of each channel. It aggregates all series to form a global core representation, which is then dispatched and fused with individual series representations to facilitate channel interactions effectively. SOFTS achieves superior performance over existing state-of-the-art methods with only linear complexity. The broad applicability of the STAR module across different forecasting models is also demonstrated empirically. We have made our code publicly available at https://***/Secilia-Cxy/SOFTS. © 2024 Neural information processing systems foundation. All rights reserved.

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FRBBM-Scheme: A Flexible Ratio Virtual Primary Key Generation Approach Based on Binary Matching 13th

FRBBM-Scheme: A Flexible Ratio Virtual Primary Key Generatio...

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13th IFIP TC 12 International conference on Intelligent Information processing, IIP 2024

作者： Liang, Tiancai Zhao, Yun Wang, Haolin Cai, Ziwen Wang, Zhaoguo Wang, Wenchao Liu, Chuanyi Harbin Institute of Technology Shenzhen Shenzhen518055 China HIT-QIANXIN Data Security Research Institute Shenzhen518055 China Guangdong Provincial Key Laboratory of Novel Security Intelligence Technologies Shenzhen518055 China Electric Power Research Institute of CSG Guangzhou510080 China

ISBN: (纸本)9783031578076

The protection of database watermarking techniques based on primary key (PK) is weakened by potential PK attacks and their huge impact. Using virtual primary key (VPK) schemes is an effective solution to enhance the robustness of these techniques. Pérez Gort et al. proposed the HQR-Scheme, which first considers balancing the participation rate of each attribute to improve the ability of scheme to cope with deletion attacks. However, the HQR-Scheme has limited control ability and cannot adapt to changes in relevant information in databases. Facing these challenges, we innovatively propose the FRBBM-Scheme, which allows users to fully analyze data table information and formulate flexible ratio adjustment strategies to enhance their ability to cope with deletion attacks. We verify our proposed scheme through multiple experiments, which show that it has excellent ratio control ability, can generate high-quality VPK sets, and can resist different levels of attribute deletion attacks. © IFIP International Federation for Information processing 2024.

关键词： Database systems

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Perfluoroalkylated metallophthalocyanines as EUV resist candidates 39

Perfluoroalkylated metallophthalocyanines as EUV resist cand...

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conference on advances in Patterning Materials and Processes XxxiX Part of SPIE Advanced Lithography and Patterning conference

作者： Ku, Yejin Kim, Jun-il Oh, Hyun-Taek Kim, Youngtae Choi, Minkyu Lee, Jin-Kyun Kim, Kang-Hyun Park, Byeong-Gyu Lee, Sangsul Koh, Chawon Nishi, Tsunehiro Kim, Hyun-Woo Inha Univ Program Environm & Polymer Engn Incheon 22212 South Korea Inha Univ Dept Polymer Sci & Engn Incheon 22212 South Korea POSTECH Dept Mech Engn Pohang 37673 South Korea POSTECH Pohang Accelerator Lab Pohang 37673 South Korea Samsung Elect Co Ltd Semicond R&D Ctr Gyeonggi Do 18448 South Korea

ISBN: (纸本)9781510649866;9781510649859

In this study, a molecular resist capable of high-resolution patterning with excellent sensitivity was pursued by introducing a metal atom into a small molecular fluorinated core. After selecting the phthalocyanine (Pc) unit as a molecular framework, exhibiting excellent chemical stability and etch resistance, fluorinated alkyl and aryl moieties and zinc atoms were incorporated into the framework to complete the synthesis of Pc-based EUV resists. Analyses of the recovered compounds were performed by nuclear magnetic resonance (NMR), Fourier transform infrared spectroscopy (FT IR), and ultraviolet-visible (UV-vis) spectroscopy to confirm that the structures of the desired materials were secured properly. Through the electron-beam lithographic experiments, it was verified that all the thin films composed of the three Pc materials lost their solubility by interacting with high-energy electrons to form negative-tone images. When EUV lithography was carried out on ZnPc-A, which has linear perfluoroalkyl moieties, 40 nm-sized patterns were formed at the relatively small energy of 34 mJ/cm(2). From the synthesis and lithographic characterization results, it can be assumed that fluorinated metallophthalocyanine materials can be considered EUV resist candidates. However, for high-resolution patterning, it is necessary to maintain an appropriate film thickness and adjust the processing parameters, including the adhesion to the substrate.

关键词： Extreme UV lithography EUV resist Perfluoroalkylated organometallic compound Metallophthalocyanine Non-chemically amplified resist

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Metal oxide resist (MOR) EUV lithography processes for DRAM application 39

Metal oxide resist (MOR) EUV lithography processes for DRAM ...

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conference on advances in Patterning Materials and Processes XxxiX Part of SPIE Advanced Lithography and Patterning conference

作者： Kawakami, Shinichiro Onitsuka, Tomoya Kamei, Yuya A. Shimura, Satoru Ha Park, Chan Lee, Sang Ho Lee, Hong Goo Seo, Jae Wook Kim, Jin It Roh, Jun Ho Kim, Jin Hyung Lee, Ki Lyoung Nagahara, Seiji Kim, Jeoung Yun Kim, Jang Hwan Inaba, Shingo Park, Jong Eun Tokyo Electron Kyushu Ltd 1-1 Fukuhara Kumamoto 8611116 Japan SK Hynix Inc 2091 Gyeongchung Daero Ichon Si Gyeonggi Do South Korea Tokyo Electron Ltd Minato Ku Akasaka Biz Tower 3-1 Akasaka 5 Chome Tokyo 1076325 Japan Tokyo Electron Korea Ltd 2056 Gyeongchung Daero Icheon Si 17332 Gyeonggi Do South Korea

ISBN: (纸本)9781510649866;9781510649859

This paper reports the readiness of key EUV resist process technologies using Metal Oxide resist (MOR) aiming for the DRAM application. For MOR, metal contamination reduction and CD uniformity (CDU) are the key performance requirements expected concerning post exposure bake (PEB). Based on years of experience with spin-on type Inpria MOR, we have designed a new PEB oven to achieve contamination mitigation, while keeping our high standard of CDU. The new bake oven was introduced in our coater and developer and evaluated using line/space patterns. As described in the results, exceptional CD uniformity was realized while exceeding the metal contamination specification. The new plate design also enabled a 30% reduction in dose-to-size without degradation of CDU when applying higher PEB temperature. Another challenge for the DRAM application in particular is pattern collapse as applied to pillar patterns. By optimization of several parameters, the pattern collapse margin extended the minimum CD by 13.8%. The result was achieved with a combination of SiC in place of SOG for under layer, thinner resist film thickness and a modified resist material, MOR-B. Finally, to achieve target yield performance, defectivity reduction is also an important task towards MOR application. An integrated approach is needed to realize scum free patterning because if metal residuals remain in the open space, they can cause yield-killing defects. By analyzing possible root causes of defect sources, we attempt to eliminate etch-masking scum layer present after conventional developer processing. By applying a post develop rinse including novel hardware for defect reduction, bridge defects were reduced up to 19% with new the technology.

关键词： Metal Oxide resist (MOR) DRAM EUV resist EUV lithography Post Exposure Bake development defectivity

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Terahertz Image processing: A Boon to the Imaging technology

Terahertz Image Processing: A Boon to the Imaging Technology

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International conference on advances in Data Science and Computing Technologies, ASDC 2022

作者： Karmakar, Jayashree Samanta, Debabrata Banerjee, Amit Karthikeyan, M.P. Department of Physics National Institute Of Technology Sikkim Sikkim India Department of Computing and Information Technologies RochesterInstitute of Technology Kosovo Prishtina Kosovo Department of Physics Bidhan Chandra College West Bengal Hooghly India Karnataka Bengaluru India

ISBN: (纸本)9789819936557

The present era is called the digital age that employs and utilizes digital signals in various fields like medical, defense, education, industry, entertainment, research, and many more. Undoubtedly images, among different signals, possess a wide application area. In most cases, the digital images are acquired through any optical image acquisition system that utilizes visible wavelengths, infrareds, and microwaves. In some cases, radiography (viz. X-rays, computed tomography), sound waves (viz. ultrasonography), electromagnetic waves (magnetic resonance imaging), electrons (charged coupled devices, scanning electron microscope), etc., are being utilized for visualizing the objects that resist the passing of visible wavelengths. However, there is a technical limitation of these imaging devices that limits the spatial resolution of captured frames. The point spread function and sampling rate control the image’s spatial resolution which further depends on the number of sensor elements. © 2023, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Scanning electron microscopy

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A Seam Tracking Algorithm Utilizing Spatio-Temporal Information of Laser Vision in Thin Plate Butt Welding for Shipbuilding 2

A Seam Tracking Algorithm Utilizing Spatio-Temporal Informat...

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2nd International conference on New Materials, Machinery, and Vehicle Engineering, NMMVE 2023

作者： Wei, Naikun Yin, Xuyue Li, Zufa Xi, Juntong Yang, Rundang Kong, Ning School of Mechanical Engineering Shanghai Jiao Tong University Shanghai200240 China Shanghai Shipbuilding Technology Research Institute Shanghai200032 China National Engineering Research Center of Ship Intelligent Manufacturing Shanghai200032 China School of Mechanical Engineering Tong Ji University Shanghai201804 China Shanghai Waigaoqiao Shipbuilding Co. Ltd. Shanghai200137 China

ISBN: (纸本)9781643684208

Thin plates constitute more than 80% of the structural components in shipbuilding, and butt welding is an essential technological process in ship manufacturing. Different from general butt welding, thin plate welding for shipbuilding is characterized by long length (≥ 15 m), narrow seam width (≤ 1 mm), and high precision demands (≤ 0.5 mm). The clamping deformation, arc sparks, and noise pollution during the welding seriously affect the tracking precision in automated welding. To address this problem, this paper presents a seam tracking algorithm combining image processing techniques and spatiotemporal tracking data filtering techniques to acquire a steady and smooth torch trajectory with less position variation. In the image processing stage, a spatiotemporal density mask image processing method is proposed to preserve effective pixels in spatiotemporal laser images to resist noises and improve the accuracy of welding point position estimation. Experimental results show that the frequency of the proposed seam tracking method can reach 30 Hz, the average absolute tracking error is less than 0.25 mm, and the maximum tracking error is less than 0.4 mm. The welding torch runs more smoothly during welding thus leading to higher welding quality. © 2023 The authors and IOS Press.

关键词： Butt welding

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All New Nickel Based Metal Core Organic Cluster (MCOC) resist for N7+Node Patterning 37

All New Nickel Based Metal Core Organic Cluster (MCOC) Resis...

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conference on advances in Patterning Materials and Processes XXXVII

作者： Sharma, Satinder K. Kumar, Rudra Chauhan, Manvendra Moinuddin, Mohamad G. Peter, Jerome Ghosh, Subrata Pradeep, Chullikkattil P. Gonsalves, Kenneth E. Indian Inst Technol IIT Mandi Sch Comp & Elect Engn SCEE Mandi 175005 Himachal Prades India Indian Inst Technol IIT Mandi Sch Basic Sci SBS Mandi 175005 Himachal Prades India

ISBN: (纸本)9781510634206

The increase in the demand of sub-10 nm feature size in semiconductor industries necessitates a new kind of resist material development which can absorb a large fraction of irradiaion and retains the small size cluster distribution (1-2 nm). In this context, we developed a novel nickel-based organo-metallic cluster comprising high optical density inorganic nickel as metal building units (MBU), and 3,3-Dimethylacrylic acid as an organic ligand to form Ni-DMA clusters. The synthesised clusters have similar to 1 nm size with narrow size distribution. The formulated resist shows the negative tone pattern when exposed with a focused helium ion (He+) beam and e-beam. The high-resolution line patterns of similar to 8 nm at the dose of similar to 40 mu C cm(-2) were obtained with the minimum line edge roughness (LER) and line width roughness (LWR) of 2.16 +/- 0.04 nm and 3.03 +/- 0.06 nm, respectively.

关键词： Metal core organic cluster helium ion beam lithography sub-10 nm node negative tone resist semiconductor processing

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Research on Differential Power Analysis of Lightweight Block Cipher LED 10th

Research on Differential Power Analysis of Lightweight Block...

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10th International conference on Computer Engineering and Networks, CENet 2020

作者： Zou, Yi Li, Lang Zhao, Hui-huang Jiao, Ge College of Computer Science and Technology Hengyang Normal University Hengyang421002 China Human Provincial Key Laboratory of Intelligent Information Processing and Application Hengyang421002 China

ISBN: (纸本)9789811584619

LED algorithm is a new lightweight encryption algorithm proposed in CHES 2011, which is used for IOT to protect the communication security of RFID tags and smart cards. It has been found that it is possible to retrieve secret key of algorithm by appropriate analysis of the devicess power consumption, and the differential power analysis is the most powerful attack. This paper proposed a method of differential power analysis on LED algorithm. Combined with hardware circuit, it designed and implemented differential power analysis of the LED encryption system. The experimental results show that method which is proposed in this paper was cracked the 64 bits key of LED. Thus, without protection, the cipher LED would be difficult to resist differential power analysis. and according this, We provide a general analysis method of differential power analysis on other lightweight cryptographic algorithms. © 2021, The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Light emitting diodes

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