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Prospects of atmospheric electricity in Malaysia

Prospects of atmospheric electricity in Malaysia

引用

IEEE Region 10 International conference TENCON

作者： K. Nasrullah N. Mariun J. Yeak Department of Electrical & Electronic Engineering Faculty of Engineering Universiti Putra Malaysia Selangor Malaysia

This paper presents the developments in background stories of atmospheric electricity and reports different possible configurations to store atmospheric electricity in humid environment of Malaysia. The ultimate object is to shift atmospheric charges on Earth using laser induced weak plasma channel. On Earth's surface the average electric field is about 120 v/m. This value corresponds to a surface charge density of -1.2/spl times/10/sup -9/ C/m/sup 2/. Integrated over the Earth's surface, this value gives a total negative charge at Earth of about 600 kC. An equal positive charge should exist in the atmosphere. Integrating the electric field from the Earth's surface to the ionosphere gives a potential difference of about 200 kv. As a result of the existence of a vertical downward-directed electric field in the presence of negative and positive atmospheric ions, a downward-directed (air-earth) current density, also known as Maxwell current density, is constantly flowing in the fair weather regions of the atmosphere. It is nearly constant with altitude and of the order of 2/spl times/10/sup -12/ A/m/sup 2/.

关键词： Lightning Gas lasers Earth Electric breakdown Atmosphere Gases optical pulses Mirrors voltage Ionosphere

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Development of /spl delta/B/i-Si//spl delta/Sb and /spl delta/B/i-Si//spl delta/Sb/i-Si//spl delta/B resonant interband tunnel diodes for integrated circuit applications

Development of /spl delta/B/i-Si//spl delta/Sb and /spl delt...

引用

Device Research conference

作者： S.L. Rommel Niu Jin T.E. Dillon S.J. Di Giacomo J. Banyai B.M. Cord C. D'Imperio D.J. Hancock N. Kirpalani v. Emanuele P.R. Berger P.E. Thompson K.D. Hobart R. Lake Departmcnt of Electrical arid Computer Engineering University of Delaware Newark DE USA University of Delaware Newark DE US Naval Research Laboratory Washington D.C. DC USA

Recent developments in Si based tunnel diode technologies have made the realization of circuits incorporating both tunnel diodes and transistors feasible. A recent study by the authors presented the design of an n-on-p Si RITD layer with a peak-to-valley current ratio (PvCR) of 2.15 at a current density of 3 kA/cm/sup 2/ which was grown by molecular beam epitaxy (MBE) (Thompson et al, Appl. Phys. Lett. vol. 75, pp. 1308-1310, 1999). Further studies of this structure investigated additional tunnel barrier thicknesses of 4 nm, 8 nm, and 10 nm. In all samples, room temperature NDR was observed comparable to that of the baseline 6 nm RITD. Simple adjustments to the tunnel barrier thickness can be made to tailor the performance for a particular circuit application. However, growth of a complimentary p-on-n tunnel diode is problematic due to Sb segregation through the intrinsic tunneling spacer. The solution is to control the Sb segregation by employing multiple substrate temperatures during MBE growth. Following the success of the complementary p-on-n growth strategy, it was now possible to demonstrate the integration of two tunnel diodes in a single growth. The basic flow and design presented here follow that of III-v RITDs (Yang et al, 1995), presenting a symmetric pnp RITD structure. The motivation for developing this structure was to mimic the I-v characteristic of III-v RITDs which have NDR regions under forward and reverse bias. A Si-based structure with these properties would facilitate the development of a Goto-type memory cell (Goto et al, 1960).

关键词： current density Diodes Annealing Computer aided analysis Circuits Doping Potential well Unsolicited electronic mail Temperature

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MBE growth of high quality metamorphic HEMT structures on GaAs

MBE growth of high quality metamorphic HEMT structures on Ga...

引用

Indium Phosphide and Related Materials conference

作者： D. Lubyshev W.K. Liu T. Stewart A.B. Cornfeld J. Patton J.M. Millunchick W. Hoke P.F. Marsh C. Meaton K. Nichols S.P. Svensson Quantum Epitaxial Designs Inc. Bethlehem PA USA Department of Materials Science and Engineering University of Michigan Ann Arbor MI USA Raytheon Microelectronics Center Andover MA USA Epitaxial Products International Limited Cardiff UK Lockheed Martin Company Nashua NH USA Army Research Laboratory College Park MD USA

Metamorphic high electron mobility transistor (MHEMT) structures with In/sub 0.53/Ga/sub 0.47/As channels were grown by molecular beam epitaxy on GaAs substrates using As-, P-, and Sb-based buffer layers. Structural, electrical, and optical characterizations were used to correlate buffer layer design and growth parameters with channel carrier mobility, surface morphology, and photoluminescence efficiency. X-ray reciprocal maps indicate complete lattice relaxation of buffer layer. All MHEMTs studied in this work exhibited excellent transport properties comparable to HEMTs grown lattice-matched on InP. RMS roughness of <14 /spl Aring/ were achieved for both InAlGaAs and AlGaAsSb-based buffers. MHEMT devices with 0.15 /spl mu/m gates were fabricated successfully on As-based M-buffers with transconductance of /spl sim/700 mS/mm, saturated drain current at zero gate bias of 200 mA/mm, and gate-drain breakdown voltage of 6.6 v.

关键词： mHEMTs Gallium arsenide Buffer layers Molecular beam epitaxial growth HEMTs MODFETs Substrates Electron optics optical buffering optical saturation

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The dynamic threshold voltage MOSFET

The dynamic threshold voltage MOSFET

引用

IEEE International Caracas conference on Devices, Circuits and Systems

作者： F.J. de la Hidalga-W. M.J. Deen Dept. of Electr. & Comput. Eng. McMaster Univ. Hamilton Ont. Canada Electrical and Computer Engineering McMaster University Hamilton ONT Canada

In this contribution, the development of the dynamic threshold voltage (DT) MOSFET is reviewed. The forward-biasing of the source-substrate junction was proposed for the first time in 1984 as part of an early strategy to improve the MOSFET performance when scaled. This led to the design of a quarter-micron technology, operating at 77 K, using a 0.6 v voltage supply and with the substrate connected to a fixed forward biasing potential. Ten years later, the operation of the gate controlled lateral bipolar transistor (GC-LPNP) and the SOI MOSFET with the substrate tied to the gate terminal both operating as dynamic threshold devices, were demonstrated. The SOI DTMOS was the best alternative for ultra low power CMOS applications and the GC-LPNP was used for some compact low power analog circuits. Aggressive technological improvements led to successful fabrication of bulk DTMOS, whose current representatives show impressive figures of merit regarding gate delay-power consumption products, well above those of conventional CMOS.

关键词： Threshold voltage MOSFET circuits CMOS technology Dynamic voltage scaling Substrates Energy consumption Degradation optical computing Bipolar transistors CMOS analog integrated circuits

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Compact finger imager

Compact finger imager

引用

8th conference on current developments in optical design and optical engineering

作者： Clark, PP Goodman, DS Plummer, WT Polaroid Corp Dept Opt Engn Cambridge MA 02139 USA

ISBN: (纸本)0819432652

We present the design of a compact, low-cost finger imager, to be used for enrolling and recognizing individuals based upon their finger ridge patterns. The optical system employs viewing beyond the critical angle and darkfield illumination for maximum image contrast. The optical system is afocal and telecentric, achieving corrected distortion with oblique viewing.

关键词： optical system design biometrics fingerprint plastic aspheric lenses

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Novel design concepts for Uv laser beam shaping

Novel design concepts for UV laser beam shaping

引用

8th conference on current developments in optical design and optical engineering

作者： Bernges, J Unnebrink, L Henning, T Kreutz, EW Poprawe, R Rhein Westfal TH Aachen Lehrstuhl Lasertech D-52074 Aachen Germany

ISBN: (纸本)0819432652

Recent developments in the field of high transmitting beam shaping optics for material processing are presented. Central parts of these optics are non-rotationally symmetric optical elements (NOEs). Advanced design principles for NOEs are presented. An optical setup containing a NOE and a system for the adaptation of the spatial coherence properties of excimer lasers to the processing requirements are presented together with beam diagnosis and material processing results. In comparison to results obtained earlier a largely increased beam shaping performance is demonstrated.

关键词： excimer laser non-rotationally symmetric optical elements beam shaping transversal degree of coherence optical systems

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optical design of the Next Generation Sky Survey (NGSS) Telescope

Optical design of the Next Generation Sky Survey (NGSS) Tele...

引用

8th conference on current developments in optical design and optical engineering

作者： Chrisp, MP Ball Aerosp & Technol Corp Boulder CO 80301 USA

ISBN: (纸本)0819432652

The Next Generation Sky Survey (NGSS) Telescope is a spaceborne cryogenic optical telescope with four channels covering the wavelength range 3.5 to 23 microns. The 0.5 m aperture telescope is based on a modified three mirror afocal design, with a scan mirror at the exit pupil compensating for the spacecraft motion. After the scan mirror, the light is spectrally split and focussed by three refractive camera systems onto four detector arrays. The nominal optical design exceeds the requirement of diffraction limited performance at 8 microns wavelength over the 1 degree by 0.5 degree field of regard.

关键词： optical design telescope infrared mirrors space cryogenic

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optical design of high aperture compact relay systems

Optical design of high aperture compact relay systems

引用

8th conference on current developments in optical design and optical engineering

作者： Nikolov, ID Univ Sofia Opt & Spect Dept BG-1126 Sofia Bulgaria

ISBN: (纸本)0819432652

Some results obtained in the realization of compact relay systems design are presented. Four optical configurations have been analyzed. Two symmetrical schemes were examined having field Smith's lenses for a image scaling of-ix. The achieved numerical aperture is up to 0.35 and the MTFs curves are at 40 cycles1/mm for a contrast ratio of 0.2. The third design has a large field of 40 mm but its F-number is about F/4.5. The last relay system is unsymmetrical. The scaling is 2x and the image field exceeds 50 mm. The aberration balancing results and the optical systems performance are illustrated.

关键词： optical design relay systems high-speed optics wide-angle lenses

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All-plastic optical design for NIR region

All-plastic optical design for NIR region

引用

8th conference on current developments in optical design and optical engineering

作者： Ivanov, CD Nikolov, ID Univ Sofia Opt & Spect Dept BG-1126 Sofia Bulgaria

ISBN: (纸本)0819432652

A number of optical plastic materials are examined. The indices of refraction are measured in the visible and near-infrared spectral regions from 435.8 nm to 1052 mn. Some obtained data and Abbe constants are presented. The glass libraries of the optical design software packages are updated. The spherochromatic aberration balancing is analyzed during the all-plastic doublet and tripler synthesis for a working wavelengths interval from 600 nm to 900 nm. Two achromatic triplets are designed intended for NIR region. Three all-plastic 3X magnifiers are developed for Nv goggles. The optical configurations are given. The aberration corrections are evaluated. The obtained optical performance is illustrated. Some conclusions for the trends in all-plastic optical design are drawn.

关键词： optical plastics index measurements lens design achromatization NIR magnifiers Nv goggles

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optical design of the Hobby-Eberly Telescope Four Mirror Spherical Aberration Corrector

Optical design of the Hobby-Eberly Telescope Four Mirror Sph...

引用

8th conference on current developments in optical design and optical engineering

作者： Jungquist, RK Eastman Kodak Co Commercial & Govt Syst Div Rochester NY 14650 USA

ISBN: (纸本)0819432652

The Hobby-Eberly Telescope uses a ii-meter diameter F/1.45 segmented spherical primary mirror. A spherical mirror of this size generates large amounts of spherical aberration. To be used successfully in a tilted optical Arecibo type telescope, the spherical aberration needs to be corrected. This means that tracking of astronomical targets is achieved through moving a tracker optical package which imposes somewhat severe packaging constraints. Given these packaging constraints, novel methods must be employed to correct the aberrations with the Spherical Aberration Corrector contained in the moving hacker optical package. The paper reviews the pertinent requirements, constraints and the resultant design of the Hobby-Eberly Telescope Four Mirror Spherical Aberration Corrector.

关键词： telescope design four mirror spherical aberration

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