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检索条件"任意字段=Conference on Current Developments in Optical Design and Engineering V"

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A new preprocessing and control board for the phase 2 electronics of AGATA experiment

A new preprocessing and control board for the phase 2 electr...

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2016 IEEE-NPSS Real Time conference, RT 2016

作者： Collado, J. Blasco, J.M. Dosme, N. Gonzalez, v. Grave, X. Karkour, N. Lafay, X. Legay, E. Linget, D. Sanchis, E. University of Valencia School of Engineering Department of Electronic Engineering Burjassot Valencia46100 Spain University of Valencia Department of Physiotherapy Valencia46010 Spain CSNSM Université Paris-Sud Université Paris-Saclay Orsay91405 France

ISBN: (纸本)9781509020140

The electronics of AGATA HPGe segmented gamma ray detector faces a new challenge in the search of a bigger integration and cost reduction for the phase 2 of the experiment going beyond 45 crystals. This opportunity can be used to introduce a new architecture based on commercial standards while keeping backward compatibility with current electronics. In this sense, new FPGA devices and fast Ethernet links can be used to ease the preprocessing and control task and allowing for processor farms to distribute the processing load. At the same time, modularity should be a key feature of the design in the aim to make it upgradable in time and technology. This paper presents the design of a new preprocessing and control board that could fulfill with the experiment requirements having in mind that it should not be only a new system but also should serve as replacement of the current electronics. The design is intended to process the data coming from 3 crystals (114 channels) in the same board, with a total aggregate bandwidth of 216 Gpbs using 2 Gbps input optical fiber links in SNAP12 format and with a data readout done through Ethernet fiber optics. It is expected that, with this new system, the level of integration will raise up to 3 times while cost will scale down a 30% with respect to the current electronics. © 2016 IEEE.

关键词： Data transfer

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Direct visualization of the In-Plane Leakage of High-Order Transverse Modes in vertical-Cavity Surface-Emitting Lasers Mediated by Oxide-Aperture engineering 20

Direct Visualization of the In-Plane Leakage of High-Order T...

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conference on vertical-Cavity Surface-Emitting Lasers XX

作者： Ledentsov, N., Jr. Shchukin, v. A. Kropp, J-R. Burger, S. Schmidt, F. Ledentsov, N. N. VI Syst GmbH Hardenbergstr 7 D-10623 Berlin Germany Zuse Inst Berlin Takustr 7 D-14195 Berlin Germany

ISBN: (纸本)9781510600010

Oxide-confined apertures in vertical cavity surface emitting laser (vCSEL) can be engineered such that they promote leakage of the transverse optical modes from the non- oxidized core region to the selectively oxidized periphery of the device. The reason of the leakage is that the vCSEL modes in the core can be coupled to tilted modes in the periphery if the orthogonality between the core mode and the modes at the periphery is broken by the oxidation-induced optical field redistribution. Three-dimensional modeling of a practical vCSEL design reveals i) significantly stronger leakage losses for high-order transverse modes than that of the fundamental one as high-order modes have a higher field intensity close to the oxide layers and ii) narrow peaks in the far-field profile generated by the leaky component of the optical modes. Experimental 850-nm GaAlAs leaky vCSEL sproduced in the modeled design demonstrate i) single-mode lasing with the aperture diameters up to 5 mu m with side mode suppression ratio >20dB at the current density of 10kA/cm(2);and ii) narrow peaks tilted at 37 degrees with respect to the vertical axis in excellent agreement with the modeling data and confirming the leaky nature of the modes and the proposed mechanism of mode selection. The results indicate that in-plane coupling of vCSELs, vCSELs and p-i-n photodiodes, vCSEL and delay lines is possible allowing novel photonic integrated circuits. We show that the approach enables design of oxide apertures, air-gap apertures, devices created by impurity-induced intermixing or any combinations of such designs through quantitative evaluation of the leaky emission.

关键词： vertical cavity surface-emitting laser oxide aperture leakage engineering

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Chemoretina: An alternate approach to retinal prosthesis: visual stimulation strategy using chemicals

Chemoretina: An alternate approach to retinal prosthesis: Vi...

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2016 IEEE Annual India conference, INDICON 2016

作者： Pai, Anuradha v. Bellare, Jayesh Gandhi, Tapan K. Silicate Lab Dept. of Biosciences and Bioengineering Indian Institute of Technology Powai Mumbai India Silicate Lab Dept. of Chemical Engineering Indian Institute of Technology Powai Mumbai India Dept. of Electrical Engineering Indian Institute of Technology Delhi New Delhi India

ISBN: (纸本)9781509036462

Hereditary degenerative diseases of retina (such as Retinitis pigmentosa and age related macular degeneration), cause photoreceptor cell loss leading to progressive visual impairment. Since there is no medical treatment to reverse/overcome the effects of photoreceptor loss, restoring vision with the aid of a prosthetic seems to be the only option. Different types of prosthesis incorporating different geometries and design of multielectrode arrays have been developed to be surgically placed in and around retina. However patients implanted with these devices have been able to see only flickers of light (or phosphenes). Therefore in the present work we have come up with an alternate strategy of stimulating retina through chemicals: Chemoretina. Briefly, our idea involves stimulating voltage gated sodium channels of retinal bipolar cells using drugs, in a manner analogous to photoreceptor stimulation. This paper illustrates our approach to Chemoretina and current developments so far. © 2016 IEEE.

关键词： Prosthetics

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Derivation of ground models and characteristic geotechnical profiles in offshore wind farms at pre-FID stage 26

Derivation of ground models and characteristic geotechnical ...

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26th Annual International Ocean and Polar engineering conference, ISOPE 2016

作者： Terente, v.A. Owen, M.J. Higgs, D.M. Ellery, G. Cathie Associates Ltd. Newcastle-upon-Tyne United Kingdom

ISBN: (纸本)9781880653883

Large offshore Windfarm developments require significant investment decisions at early stages (pre-funding investment decision, so called pre-FID stage), when in many cases geotechnical information at the majority of the proposed turbine positions is not available or has been performed to a limited depth. The generation of a ground model integrating desk study (geology, seabed mobility, depositional environment, formation variability, etc.), geophysical and advanced borehole data is therefore key in the evaluation of future survey strategies, foundation concepts, construction risks and cost estimates of foundation works for final investment decisions. current geotechnical design practice is generally based on probabilistic assessments, factors of safety and derivation of design geotechnical profiles from borehole data at the location of the structure. Little guidance exists with regards to the preparation of an advanced geotechnical investigation report that also evaluates the anticipated ground profiles and geotechnical risks at locations where partial, or no, borehole data exists. This paper puts forward a recommended process, based on a thorough understanding of the geology and the integration of geological models, geotechnical, geophysical data and application of geostatistical methods to report the anticipated ground profiles and uncertainty at positions where only partial borehole information exists. The process is then illustrated with several examples of windfarm cases. © Copyright 2016 by the International Society of Offshore and Polar Engineers (ISOPE).

关键词： Cost estimating

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The efficiency of GaN/AlGaN p-n heterostructures in Uv spectral range 3

The efficiency of GaN/AlGaN p-n heterostructures in UV spect...

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3rd International School and conference on Optoelectronics, Photonics, engineering and Nanostructures (Saint Petersburg OPEN)

作者： Kurin, S. Yu Usikov, A. S. Papchenko, B. P. Helava, H. Makarov, Yu N. Evseenkov, A. S. Tarasov, S. A. Solomonov, A. v. Nitride Crystals AlN Ltd Pr Engelsa 27 St Petersburg 194156 Russia Univ ITMO Kronverkskiy Pr 49 St Petersburg 197101 Russia Nitride Crystals Inc 181 E Ind CourtSuite B Deer Pk NY 11729 USA St Petersburg Electrotech Univ LETI 5 Prof Popov Str St Petersburg 197376 Russia

GaN/AlGaN p-n heterostructures emitting in Uv spectral range obtained by HvPE approach were investigated. It was shown that the peak wavelength of Uv LEDs was in the range of 360-380 nm with FWHM of 10-13 nm. At operating current of 20 mA, the active region temperature T-j was 43 degrees C, the output optical power and efficiency - 1.14 mW and 1.46%, respectively. The model based on corpuscular Monte Carlo method for calculation of the light extraction index was presented. The simulation results allow us to propose the ways to increase the efficiency of Uv LEDs: surface interfaces texturing, optimization of the design of heterostructures, and the use of lenses.

关键词： Gallium nitride

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design, developments, and results from the NIST additive manufacturing metrology testbed (AMMT) 27

Design, developments, and results from the NIST additive man...

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27th Annual International Solid Freeform Fabrication Symposium - An Additive Manufacturing conference, SFF 2016

作者： Lane, B. Mekhontsev, S. Grantham, S. vlasea, M.L. Whiting, J. Yeung, H. Fox, J. Zarobila, C. Neira, J. McGlauflin, M. Hanssen, L. Moylan, S. Donmez, A. Rice, J. Engineering Laboratory National Institute of Standards and Technology GaithersburgMD20899 United States Physical Measurement Laboratory National Institute of Standards and Technology GaithersburgMD20899 United States Mechanical and Mechatronics Engineering University of Waterloo WaterlooONN2L 3GI Canada

The National Institute of Standards and Technology (NIST) is developing a facility titled the Additive Manufacturing Metrology Testbed that will enable advanced research into monitoring, controls, process development, and temperature measurement for laser powder bed fusion additive manufacturing and similar processes. This system provides an open control architecture as well as a plethora of sensor systems and calibration sources that are primarily radiance-based and aligned co-axially with the laser beam and focused on the laser interaction zone. This paper briefly reviews the system requirements, and details the current progress of the facility design and construction. Mechanical, optical, and control systems designs are detailed with select highlights that may be relevant to additive manufacturing researchers and system developers. Recent experimental results from the prototype laser control and in-situ monitoring system are also highlighted. © 2016 The Department of Energy’s Kansas City National Security Campus is operated and managed by Honeywell Federal Manufacturing Technologies, LLC under contract number DE-NA0002839.

关键词： 3D printers

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Coordinate interferometric measurement with infrared telecom laser diode 16

Coordinate interferometric measurement with infrared telecom...

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16th International conference of the European Society for Precision engineering and Nanotechnology, EUSPEN 2016

作者： Lazar, Josef Holä, Miroslava Čížek, Martin Hucl, václav Rerucha, Šimon Číp, Ondrej Kralovopolska 147 Brno61264 Czech Republic

ISBN: (纸本)9780956679086

We present the design of an interferometric position measuring system for the control of the sample-carrying translation stage in an e-beam writer with reproducibility of the position on nanometre level and resolution below nanometre. We introduced differential configuration of the interferometer where the position is measured with respect to a central reference point to eliminate deformations caused by thermal and pressure effects on the vacuum chamber. The reference is here the electron gun of the writer. The interferometer is designed to operate at infrared telecommunication wavelength due to the risk of interference of stray light with sensitive photodetectors in the chamber. The laser source used is a narrow-linewidth DFB laser diode with a custom-developed electronics that allows for high precision and stability of the laser diode chip temperature and the injection current, very low-noise, EMI protection and high-frequency modulation capability. Detection of the interferometric signal relies on a technique using a high frequency modulation of the laser's optical frequency and the single-detector phase-sensitive detection.

关键词： Interferometry

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Performance and future developments of the RHEA single-mode spectrograph 6

Performance and future developments of the RHEA single-mode ...

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conference on Ground-Based and Airborne Instrumentation for Astronomy vI

作者： Bento, Joao Feger, Tobias Ireland, Michael J. Rains, Adam Jovanovic, Nemanja Coutts, David W. Schwab, Christian Arriola, Alexander Gross, Simon Australian Natl Univ Res Sch Astron & Astrophys Cotter Rd Canberra ACT 2611 Australia Macquarie Univ Dept Phys & Astron Sydney NSW 2109 Australia Natl Astron Observ Japan Subaru Telescope 650 North Aohoku Pl Hilo HI 96720 USA

ISBN: (数字)9781510601963

ISBN: (纸本)9781510601963

The Replicable High-resolution Exoplanet and Asteroseismology (RHEA) spectrograph is being developed to serve as a basis for multiple copies across a network of small robotic telescopes. The spectrograph operates at the diffraction-limit by using a single-mode fiber input, resulting in a compact and modal-noise-free unit. The optical design is mainly based on off-the-shelf available components and comprises a near-Littrow configuration with prism cross-disperser. The Echelle format covers a wavelength range of 430-650 nm at R=75,000 resolving power. In this paper we briefly summarize the current status of the instrument and present preliminary results from the first on-sky demonstration of the prototype using a fully automated 16" telescope, where we observe stable and semi-variable stars up to v=3.5 magnitude. Future steps to enhance the efficiency and passive stability of RHEA are discussed in detail. For example, we show the concept of using a multi-fiber injection unit, akin to a photonic lantern, which not only enables increased throughput but also offers simultaneous wavelength calibration.

关键词： High-resolution single-mode spectrograph integral field unit radial velocity exoplanets

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Development of low-noise CCD drive electronics for the World Space Observatory Ultraviolet Spectrograph subsystem 7

Development of low-noise CCD drive electronics for the World...

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conference on High Energy, optical, and Infrared Detectors for Astronomy vII

作者： Salter, Mike Clapp, Matthew King, James Morse, Tom Mihalcea, Ionut Waltham, Nick Hayes-Thakore, Chris Rutherford Appleton Lab STFC RAL Space Didcot OX11 0QX Oxon England E2v Technol 106 Waterhouse Lane Chelmsford CM1 2QU Essex England

ISBN: (纸本)9781510602090;9781510602106

World Space Observatory Ultraviolet (WSO-Uv) is a major Russian-led international collaboration to develop a large space-borne 1.7 m Ritchey-Chretien telescope and instrumentation to study the universe at ultraviolet wavelengths between 115 nm and 320 nm, exceeding the current capabilities of ground-based instruments. The WSO Ultraviolet Spectrograph subsystem (WUvS) is led by the Institute of Astronomy of the Russian Academy of Sciences and consists of two high resolution spectrographs covering the Far-Uv range of 115-176 nm and the Near-Uv range of 174-310 nm, and a long-slit spectrograph covering the wavelength range of 115-305 nm. The custom-designed CCD sensors and cryostat assemblies are being provided by e2v technologies (UK). STFC RAL Space is providing the Camera Electronics Boxes (CEBs) which house the CCD drive electronics for each of the three WUvS channels. This paper presents the results of the detailed characterisation of the WUvS CCD drive electronics. The electronics include a novel high-performance video channel design that utilises Digital Correlated Double Sampling (DCDS) to enable low-noise readout of the CCD at a range of pixel frequencies, including a baseline requirement of less than 3 electrons rms readout noise for the combined CCD and electronics system at a readout rate of 50 kpixels/s. These results illustrate the performance of this new video architecture as part of a wider electronics sub-system that is designed for use in the space environment. In addition to the DCDS video channels, the CEB provides all the bias voltages and clocking waveforms required to operate the CCD and the system is fully programmable via a primary and redundant SpaceWire interface. The development of the CEB electronics design has undergone critical design review and the results presented were obtained using the engineering-grade electronics box. A variety of parameters and tests are included ranging from general system metrics, such as the power and mass, to

关键词： DCDS correlated double sampling CCD readout CCD drive electronics World Space Observatory ultraviolet spectrograph WSO WUvS

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current density of carriers and emission rate in zinc selenide LED

Current density of carriers and emission rate in zinc seleni...

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International conference on Electronic design (ICED)

作者： U.K. Sahbudin M.H.A. Wahid P. Poopalan N.A.M. Ahmad Hambali M.M. Shahimin S.N. Ariffin N.N.A. Saidi M.A.M. Azidin Semiconductor Photonics & Integrated Lightwave Systems (SPILS) School of Microelectronic Engineering Universiti Malaysia Perlis Perlis Malaysia Semiconductor Photonics & Integrated Lightwave Systems (SPILS) School of Microelectronic Engineering Universiti Malaysia Perlis Arau Perlis MY Faculty of Engineering National Defence University of Malaysia (UPNM) Kuala Lumpur

ISBN: (纸本)9781509021611

This work is based on the development of LED using a circular chip of ZnSe. Proper analyses of the proposed LED are performed by adding optical transition and nonradiative recombination processes. The voltage applied to the ZnSe LED ranges from 0 v to 3.5 v. The current-voltage characteristic and the flow of current density are obtained. At 2.5 v, the carriers move towards n-contact hence reduces the internal quantum efficiency. The carriers are observed to drift in opposite direction of the electric field until recorded voltage of 3.5 v where both carriers in line with the electric field. The emission at low voltage in p-layer is localized and caused the efficiency to reduce considerably.

关键词： Light emitting diodes Charge carrier processes II-vI semiconductor materials Zinc compounds current density Radiative recombination

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