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检索条件"任意字段=Conference on Current Developments in Optical Design and Engineering V"

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High gain transimpedance amplifier with current mirror load

High gain transimpedance amplifier with current mirror load

引用

International conference on Mixed design of Integrated Circuits and Systems (MIXDES)

作者： Mohamed Atef Electrical Engineering Department Assiut University Assiut Egypt

This work presents the design of transimpedance amplifier (TIA) with current mirror load implemented in a 130 nm CMOS technology. The proposed TIA uses a common source (CS) TIA with a shunt feedback resistor with current mirror load to increase the TIA gain. The TIA is followed by post amplifier chain consisting of two-stage differential amplifier and a 50 Ω differential output driver to provide an interface to the measurement setup. The complete optical receiver shows an optical sensitivity of -20.3dBm for a BER= 10 -12 . The TIA alone achieves a transimpedance gain of 64.5 dBΩ, 1.05 GHz bandwidth at 2 pF total input capacitance. The current consumption of the TIA is 2.1 mA for a 1.8v single supply voltage.

关键词： Integrated circuits

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Recent developments in magneto-optic garnet-type thin-film materials synthesis

Recent developments in magneto-optic garnet-type thin-film m...

引用

7th International conference on Materials for Advanced Technologies, ICMAT 2013

作者： Nur-E-Alam, Mohammad vasiliev, Mikhail Kotov, viacheslav Alameh, Kamal Electron Science Research Institute Edith Cowan University 270 Joondalup Drive Joondalup WA 6027 Australia Institute of Radio Engineering and Electronics RAS 11 Mohovaya St Moscow 125009 Russia

Magneto-optic (MO) garnets are used in a range of applications in nanophotonics, integrated optics, communications and imaging. Bi-substituted iron garnets of different compositions are the most useful class of materials in applied magnetooptics due to their excellent MO properties (large Faraday effect) and record-high MO figure of merit among all semitransparent dielectrics. It is highly desirable to synthesise garnets which possess simultaneously a high MO figure of merit and large uniaxial magnetic anisotropy. However, the simultaneous optimization of several material properties and parameters can be difficult in single-layer garnet thin films, and it is also challenging to prepare films with high bismuth content using physical vapor deposition technologies. To meet the current challenge of developing next-generation functional MO materials, we design, develop and demonstrate the functionality of new magnetostatically-altered all-garnet multilayer heterostructures using two different garnet materials of dissimilar anisotropy types (out-of-plane and almost-inplane). The multilayer structures possess simultaneously a high MO figure of merit and large uniaxial magnetic anisotropy together with low coercivity, if each of the layers is optimized in composition and annealed correctly. We prepare thin-film heterostructures by sandwiching a MO garnet layer with almost in-plane magnetization in-between two MO garnet layers with out-of-plane magnetization using RF sputtering. We apply customised high-temperature oven annealing processes (optimized in temperature and process durations after running many trials) for the as-deposited (amorphous) garnet multilayers to obtain the crystalline garnet phase in every layer. These structures then possess simultaneously a high optical/MO quality and low coercivity, which is very attractive for the development of magnetic photonic crystals, sensing devices and ultra-fast switches. Based on Bi-substituted ferrite garnets grown on garn

关键词： Magnetos

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Microplasma assisted synthesis of gold nanoparticles mediated by ultrasound 41

Microplasma assisted synthesis of gold nanoparticles mediate...

引用

41st IEEE International conference on Plasma Science, ICOPS 2014 and the 20th IEEE International conference on High-Power Particle Beams, BEAMS 2014

作者： Zuo, Shasha Wang, Ruixue Zhang, Jue Fang, Jing Zhu, Weidong Academy for Advanced Interdisciplinary Studies Peking University Beijing China College of Engineering Peking University Beijing China Department of Applied Science and Technology Center for Microplasma Science and Technology Saint Peter's College Jersey CityNJ United States

ISBN: (纸本)9781479927111

Gold nanoparticles (AuNPs) exhibit unique optical, electronic and catalytic properties that allow their potential application in many areas. The performance of the nanoparticles depends closely on their size distribution. One of the recent developments of the synthesis of AuNPs involves the utilization of atmospheric pressure microplasmas. This approach quickly attracted much attention due to its low cost and high throughput. Yet, there is still a certain degree of difficulty to control the nanoparticles size effectively. In this study, we attempted to mediate the size distribution of AuNPs by coupling ultrasound into the microplasma-assisted nanoparticle synthesis system. The system was modeled after Mohan Sankaran and was comprised of a traditional electrochemical cell with a platinum foil as the anode, and the physical cathode being replaced by an atmospheric pressure microplasma. The microplasma was approximately 1 mm in length and was produced between a copper capillary tube (7 cm long with inner diameter of 0.355 mm) and the surface of the electrolyte precursor (containing l.214 mM HAuCI4 and 34 mM sodium citrate). Research grade argon (Ar) gas (99.99 % ) was used to pressurize the capillary tube at a constant flow rate of 50 SCCM. During the synthesis of AuNPs, the microplasma discharge was sustained at a voltage around 600 v with an operating current of -30 rnA. The ultrasonic reactor was operated at 40 kHz. The nanoparticle synthesis time was set to as 3 min, 5 min, 10 min respectively. Uv -vis absorption spectroscopy results indicated that the average size of AuNPs prepared under ultrasound irradiation is greater than that of without ultrasound. With ultrasound assistance, the average size of AuNPs increases over reaction time. The ultrasound assisted process can provide an effective strategy to adjust the size of microplasma induced AuNPs.

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Superdirectivity-Based Superoscillatory Waveform design: A Practical Path to Far-Field Sub-Diffraction Imaging

Superdirectivity-Based Superoscillatory Waveform Design: A P...

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European conference on Antennas and Propagation

作者： Alex M. H. Wong George v. Eleftheriades The Rogers S. Sr. Department of Electrical and Computer Engineering University of Toronto

ISBN: (纸本)9781479924318

Recent interest in superoscillations has led to theoretical investigations as well as proposed applications in imaging and signal processing. In this paper, we elucidate the relationship between superoscillation and the closely related concept of superdirectivity. Key similarities and differences are highlighted, which showcase windows of possibility for practical superoscillatory waveform design. Thereafter, through the example of the optical Super-Microscope - a far-field super-resolution microscope, we demonstrate how established antenna array theory can be leveraged to design a practical superoscillatory filter, which enables far-field sub-diffraction optical imaging. We end by reporting our current progress with the optical Super-Microscope and suggest future directions to improve its imaging capability.

关键词： Superoscillation Superdirectivity Sub-diffraction imaging Super-resolution Antenna array

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design of a novel wavelength scheme for DWDM-PON coexisting with current PON technologies and protected against signal interference

Design of a novel wavelength scheme for DWDM-PON coexisting ...

引用

International conference on Transparent optical Networks

作者： Ľubomír Scholtz Dušan Korček Jarmila Müllerová Faculty of Electrical Engineering University of Å½ilina Liptovský Mikulas Slovak Republic Zilinska univerzita v Ziline Zilina SK

Permanent demands for increasing bandwidth and the strong competition of other access technologies accelerate instant improvements of PON parameters. On the other hand coexistence with current PON technologies with colorless ONU is still a key issue. This paper deals with future DWDM-PON prospects. A new wavelength allocation scheme of 50 channels (and 100 channels for planned expansion) and of 100 GHz channel spacing for upstream and downstream, coexistence with legacy PONs and signal protection techniques for colorless ONUs are introduced. Tunable narrow wavelength blocking filters for DWDM-PON ONU downstream are presented.

关键词： optical filters Passive optical networks optical network units Wavelength division multiplexing Integrated optics optical films Filtering theory

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A low voltage and low power current-mode field programmable analog computational unit

A low voltage and low power current-mode field programmable ...

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Middle East conference on Biomedical engineering (MECBME)

作者： Munir A. Al-Absi Alaa Hussein Muhammad Taher Abuelma'atti Department of Electrical Engineering King Fahd University of Petroleum and Minerals Dhahran Saudi Arabia

A new current-mode analog computational unit (ACU) is presented. The ACU can be digitally programmed to produce multiplying, squaring and inverse functions. The design is based on using MOSFETs operating in subthreshold region to achieve ultra-low power dissipation. The circuit is operated from a ± 0.75v DC supply. The proposed circuit has been simulated using Tanner in 0.35μm TSMC CMOS process. Simulation results confirm the functionality of the circuit. The total power consumption is 2.3μW, total harmonic distortion is 1.1%, maximum nonlinearity error is 0.3% and the bandwidth is 2.3MHz.

关键词： Simulation current-mode circuits Equations Microwave filters optical filters Mathematical model Layout

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A novel design methodology for low-noise and high-gain transimpedance amplifiers

A novel design methodology for low-noise and high-gain trans...

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Micro-Nanoelectronics, Technology and Applications, EAMTA, Argentine School of FLAGGED

作者： Shahab Shahdoost Ali Medi Bardia Bozorgzadeh Namdar Saniei Electrical Engineering and Computer Science department of Case Western Reserve University Electrical Engineering Department of Sharif University of Technology Engineering and Applied Science department of University of Ontario Institute of Technology.

This paper reports on design and measurement results of a state of the art low-noise and high-gain transimpedance amplifier (TIA) implemented in 0.18 μm TSMC CMOS technology. Thorough design methodology for high gain and low power TIA design for 2.5 Gb/s optical communication circuits family is presented. A noiseless capacitive feedback is proposed and implemented as a noise efficient feedback network for TIA circuits. Besides, analytical noise calculations in this family of TIA circuits are presented and optimum noise criteria are derived. The saturation and instability problem of TIA circuits resulted from DC dark current of the input photodiodes (PDs) is addressed and a circuit level solution is presented. The measurement results of 0.18 μm chip shows bandwidth of 52 kHz to 1.62 GHz, and transimpedance gain of 75.5 dBΩ while dissipating 26.3 mW from a 2.2 v power supply, including the output buffer. Taking advantage of proposed capacitive feedback network and optimum noise criteria, noise measurement results show average input referred current noise of 3.18 pA/√Hz for this TIA in the bandwidth of operation.

关键词： Noise Topology Gain Bandwidth Transistors Semiconductor device measurement optical fiber amplifiers

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Miniaturized Tool for Optogenetics Based on an LED and an optical Fiber Interfaced by a Silicon Housing

Miniaturized Tool for Optogenetics Based on an LED and an Op...

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Annual International conference of the IEEE engineering in Medicine and Biology Society

作者： M. Schwaerzle P. Elmlinger O. Paul P. Ruther Department of Microsystems Engineering (IMTEK) Albert-Ludwigs-University of Freiburg

ISBN: (纸本)9781424479276

This paper reports on the design, simulation, fabrication and characterization of a tool for optogenetic experiments based on a light emitting diode (LED). A minimized silicon (Si) interface houses the LED and aligns it to an optical fiber. With a Si housing size of 550×500×380 μm~3 and an electrical interconnection of the LED by a highly flexible polyimide (PI) ribbon cable is the system very variable. PI cables and Si housings are fabricated using established microsystem technologies. A 270×220×50 μm~3 bare LED chip is flip-chip-bonded onto the PI cable. The Si housing is adhesively attached to the PI cable, thereby hosting the LED in a recess. An opposite recess guides the optical fiber with a diameter of 125 μm. An aperture in-between restricts the emitted LED light to the fiber core. The optical fiber is adhesively fixed into the Si housing recess. An optical output intensity at the fiber end facet of 1.71 mW/mm~2 was achieved at a duty cycle of 10% and a driving current of 30 mA.

关键词： optical fiber cables optical fibers Light emitting diodes Silicon Apertures Assembly

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2.5 Gbit/s compact transimpedance amplifier using active inductor in 130nm CMOS technology

2.5 Gbit/s compact transimpedance amplifier using active ind...

引用

International conference on Mixed design of Integrated Circuits and Systems (MIXDES)

作者： Mohamed Atef Diaa Abd-elrahman Electrical Engineering Department Assiut University Assiut Egypt

This paper presents the analysis and design of a 2.5 Gbit/s transimpedance amplifier (TIA) realized in 130 nm CMOS technology. The proposed TIA uses a common source (CS) amplifier with active inductive peaking (AP-TIA). The TIA is followed by a post amplifier and an output driver to provide an interface to the measurement setup. The post layout simulation demonstrates that the TIA achieves 46.16 dBΩ transimpedance gain with 2 GHz bandwidth for 2 pF input capacitance including the photodiode, ESD, and pad capacitance. The integrated input referred noise current is 1.062 μA rms . The complete optical receiver has 76.78 dBΩ transimpedance gain, and optical sensitivity of -21 dBm for BER= 10 -12 at data rate of 2.5 Gbit/s. The TIA alone consumes 5.4 mW whereas the total power consumption of the complete optical receiver is 47.3 mW for 1.8 v single supply voltage.

关键词： optical receivers Bandwidth Gain CMOS integrated circuits Capacitance Noise CMOS technology

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Compact modeling of III–v/Si FETs

Compact modeling of III–V/Si FETs

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International conference on Solid-State and Integrated Circuit Technology

作者： Xing Zhou Siau Ben Chiah Binit Syamal Arjun Ajaykumar Xu Liu Hongtao Zhou School of Electrical and Electronic Engineering Nanyang Technological University 50 NanyangAvenue Singapore

ISBN: (纸本)9781479932849

With conventional Si and emerging III-v devices being co-integrated in a hybrid integrated circuit, a unified compact model with 3-D electrostatics and quantum as well as quasi-ballistic effects is highly demanded. This paper outlines challenges and prospects in the field of compact modeling for future generation heterogeneous integrated systems. Through examples of ongoing developments, we show approaches in unifying compact models for conventional Si-MOSFETs in the drift-diffusion and velocity-saturation formalism and for emerging III-v HEMTs in the quasi-ballistic/quantum formalism for future generation III-v/Si co-integrated ULSI circuit design.

关键词： Logic gates Abstracts Silicon carbide current measurement velocity measurement Data models DH-HEMTs

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