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检索条件"任意字段=Conference on Current Developments in Optical Design and Engineering V"

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Electrically driven hybrid Si/III-v lasers based on adiabatic mode transformers

Electrically driven hybrid Si/III-V lasers based on adiabati...

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conference on Silicon Photonics and Photonic Integrated Circuits II

作者： Ben Bakir, B. Olivier, N. Grosse, Ph. Messaoudene, S. Brision, S. Augendre, E. Philippe, P. Gilbert, K. Bordel, D. Harduin, J. Fedeli, J-M. CEA LETI F-38054 Grenoble 9 France

ISBN: (纸本)9780819481924

We report the first Silicon/III-v evanescent laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100nm-thick SiO(2) layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain, and the bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBR), and a surface-grating coupler. The supermode of this hybrid structure is controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the devices, almost all the field resides in the III-v waveguide so that the optical mode experiences maximal gain, while in regions near the III-v facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side mode suppression ratio is as high as 20dB, and the fiber-coupled output power is similar to 7mW.

关键词： Photonics integrated circuits semiconductor lasers

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design and implementation of HDL modules and circuits for underwater optical wireless communication

Design and implementation of HDL modules and circuits for un...

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作者： Anguita, Davide Brizzolara, Davide Parodi, Giancarlo University of Genova Department of Biophysical and Electronic Engineering Via Opera Pia 11A Genova Italy

ISBN: (纸本)9789549260021

Underwater wireless optical communication has been used for establish a link between mobile vehicles and/or fixed nodes because light, especially in the blue/green region, allows to achieve higher data-rate than acoustical or electromagnetic waves for moderate distances. The here proposed work has the aim to pave the way for diffuse optical communication allowing to support optical communication in an Underwater Wireless Sensor Network of dense-deployed fixed nodes for specific application, such as monitoring and surveillance, for shallow, coastal and inland water in the case of moderate/limited area. The use of light impulse for communication is motivated by the possibility of targeting high data-rate, low-cost and small dimension components. This paper describes an overall vision of the system: a HDL implementation of flexible modules for the management of optical communication (based on IEEE 802.15.4 and IEEE 802.11 standard) which target the interface with current terrestrial technology for Wireless Sensor Networks;the design and implementation of circuits for underwater optical point-to-point and planar communication. The preliminary results and design consideration are reported considering also future possible developments.

关键词： optical communication

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Research sources of ionizing radiation based on transplutonium elements

Research sources of ionizing radiation based on transplutoni...

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Actinides conference

作者： Radchenko, v. M. Ryabinin, M. A. JSC SSC RIAR Dimitrovgrad 10 Ulyanovsk Reg Russia

Scientific and technical demand stimulates an extension of the practical implementation field of TPE, requirements to their ecological safety calling for the development of such materials which could be most resistant to the environment and most suitable for the production of a wide range of sources different in their application and design. Such materials can involve pure metals of transplutonium elements and their alloys with metals of platinum group as well as their chemically stable compounds (such as silicides, carbides etc.) At SSC RIAR production processes of sources of different type and application have been implemented. Examples of the most recent developments of the sources are presented below. Presented is the analysis of the current state of issues related to designing, production and application of radionuclide research sources based on transplutonium elements. Examples of the development of the most up-to-date sources of alpha-, gamma- and neutron radiation and also fission ones are considered.

关键词： Silicides

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Imaging penetrating radiation through ion photon emission microscopy

Imaging penetrating radiation through ion photon emission mi...

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conference on Penetrating Radiation Systems and Applications XI

作者： Hattar, Khalid Branson, Janelle v. Powell, Cody J. vizkelethy, Gyorgy Rossi, Paolo Doyle, Barney L. Sandia Natl Labs Albuquerque NM 87185 USA

ISBN: (纸本)9780819483027

The ion photon emission microscope (IPEM), a new radiation effects microscope for the imaging of single event effects from penetrating radiation, is being developed at Sandia National Laboratories and implemented on the 88" cyclotron at Lawrence Berkeley National Laboratories. The microscope is designed to permit the direct correlation between the locations of high-energy heavy-ion strikes and single event effects in microelectronic devices. The development of this microscope has required the production of a robust optical system that is compatible with the ion beam lines, design and assembly of a fast single photon sensitive measurement system to provide the necessary coincidence, and the development and testing of many scintillating films. A wide range of scintillating material for application to the ion photon emission microscope has been tested with few meeting the stringent radiation hardness, intensity, and photon lifetime requirements. The initial results of these luminescence studies and the current operation of the ion photon emission microscope will be presented. Finally, the planned development for future microscopes and ion luminescence testing chambers will be discussed.

关键词： Radiation effects microscopy radiation hardness ion luminescence

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Modeling Multi-Channel optical Links using OptiSPICE for WDM systems

Modeling Multi-Channel Optical Links using <i>OptiSPICE</i> ...

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conference on Modeling and Simulation for Defence Systems and Applications v

作者： Gunupudi, Pavan Smy, Tom Klein, Jackson Jakubczyk, Jan Carleton Univ Dept Elect Ottawa ON K1S 5B6 Canada Optiwave Syst Inc Ottawa ON K2E 7X1 Canada

ISBN: (纸本)9780819481696

Building on a previously presented framework for a single engine simulator (OptiSPICE) this paper will present models and techniques for modelling devices used in local area networks utilizing wavelength division multiplexing, single-mode fiber and integrated electronics. This paper will detail time-domain models of various elements that form optical links in such a system. Detailed models based on physical rate equations will be presented for laser sources and electro-optic modulators. A single mode fiber model based on the Non-linear Schrodinger Equation and which includes multiple channel effects will be presented. Finally, a model of an avalanche photo-diode using an electrical diode and a photo-current which is proportional to the optical intensity at the input will be described. The final section of the paper will present results from a multi-channel optical link. The initial part of each channel is comprised of a laser source and driver, an optical gain/attenuation element and an electro-optical modulator driven by a bit stream generator. An optical multiplexing element is then used to merge the optical channels and this is connected to a single-mode fiber. At the end of the fiber an optical splitter is used with optical filters to de-multiplex the optical signal and finally a avalanche photo-diode and amplifier is used to terminate each channel. These results demonstrate the successful simulation of multi-channel optical links using the presented optoelectronic simulation framework and models.

关键词： optical interconnects system design optical communication

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design and properties analysis of a single-chip white InGaN/GaN LED

Design and properties analysis of a single-chip white InGaN/...

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2010 International conference on Information, Networking and Automation, ICINA 2010

作者： Fu, Xiansong Niu, Pingjuan Xu, Wencui Tian, Haitao Chen, Hong Engineering Research Center of High Power Solid State Lighting Application System School of Information and Communication Engineering Tianjin Polytechnic University Tianjin 300160 China Beijing National Laboratory of Condensed Matter Institute of Physics Chinese Academy of Sciences Beijing 100080 China

ISBN: (纸本)9781424481057

LED can not only improve the quality and efficiency of light, but also save energy and reduce environmental pollution. Developing LED industry has great significance for the national economy and the people's livelihood. In the paper, main methods for fabricating white LED and recent progresses in white LED are studied. And then, a novel single-chip white InGaN/GaN LED is designed. Fanally, the I-v characteristics and optical characteristics of the LEDs are analyzed. Turn-on voltage of the single-chip white light LED is 2.7v and reverse leakage current is 0.18mA at reverse-bias voltage of *** single-chip white LED emits white light as the injection current is from 5mA to 60mA. © 2010 IEEE.

关键词： Organometallics

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Impact of corner radius on cold-formed steel member strength

Impact of corner radius on cold-formed steel member strength

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作者： Zeinoddini, v. Schafer, B.W. Department of Civil Engineering Johns Hopkins University Baltimore MD United States

The objectives of this paper are to explore (a) how corners of cold-formed steel members are included or ignored in current design methods, and (b) the effectiveness of recent proposals for modifying the strength prediction for local buckling to account for corners. The impact of round corners is examined on the behavior and strength of isolated elements and on full members using material and geometric nonlinear collapse analysis with shell finite elements in ABAQUS. Comparisons between the available methods and the nonlinear finite element analysis are completed to explore the regimes in which the methods are accurate, as well as when they are deficient. The current approach in the main Specification of AISI-S100-07, which applies no reductions regardless of corner size, is demonstrated to be unconservative. Initial recommendations for the design of sections with large corner radius by effective width and direct strength methods are provided.

关键词： ABAQUS

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Throughput enhancement technique for MAPPER maskless lithography

Throughput enhancement technique for MAPPER maskless lithogr...

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conference on Alternative Lithographic Technologies II

作者： Wieland, M. J. Derks, H. Gupta, H. van de Peut, T. Postma, F. M. van veen, A. H. v. Zhang, Y. MAPPER Lithog BV NL-2628 XK Delft Netherlands

ISBN: (纸本)9780819480514

MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing in combination with high speed optical data transport for switching the electron beams. With 13,000 electron beams each delivering a current of 13nA on the wafer, a throughput of 10 wph is realized for 22nm node lithography([1]). By clustering several of these systems together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUv. The most mature and reliable electron source currently available that combines a high brightness, a high emission current and uniform emission is the dispenser cathode. For this electron source a reduced brightness of 10(6) A/m(2)Srv has been measured, with no restrictions on emission current([2]). With this brightness however it is possible to realize a beam current of 0.3nA (@ 25nm spotsize), which is almost a factor 50 lower than the 13nA that is required for 10 wph. Three methods can be distinguished to increase the throughput: 1. Use an electron source with a 50x higher brightness 2. Increase the number of beams and lenses 50x 3. Patterned beams: Image multiple sub-beams with each projection lens MAPPER has selected option 3) 'Patterned beams' as the method to increase the beam current to 13nA. This because an electron source with a 50x higher brightness is simply not available at this time, and increasing the number of beams and lenses 50x leads to undesirable engineering issues. During the past years MAPPER has been developing the concept of 'Patterned beams'. By imaging 7x7 sub-beams per projection lens the beam current is increased to the required 13nA level. This technique will also be used to maintain throughput at 10 wph for smaller technology nodes by further increasing the number of sub-beams per projection lens. In this paper we will describe the electron optical design used to image these multiple sub-beams per lens, as well as e

关键词： MAPPER maskless electron beam lithography throughput parallel

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A 10-Gb/s optical receiver front-end with 5-mW transimpedance amplifier

A 10-Gb/s optical receiver front-end with 5-mW transimpedanc...

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2010 6th IEEE Asian Solid-State Circuits conference, A-SSCC 2010

作者： Park, Kyu-Sang Yoo, Byoung-Joo Hwang, Moon-Sang Chi, Hankyu Kim, Hyun-Chang Park, Jeong-Woo Kim, Kyungock Jeong, Deog-Kyoon GCT Semiconductor Inc. San Jose CA United States School of Electrical Engineering and Computer Science Inter-University Semiconductor Research Center Seoul National University Seoul Korea Republic of Electronics and Telecommunication Research Institute Daejeon Korea Republic of

ISBN: (纸本)9781424482979

This paper describes the design and performance of a 10-Gb/s optical receiver front-end fabricated in a 0.13-μm CMOS technology. To realize a wide bandwidth transimpedance amplifier (TIA) that has large input parasitic capacitance, an area-efficient stacked spiral transformer is implemented. By using a capacitance multiplication technique, the baseline wander resulting from a current offset cancellation is minimized. The TIA achieves a transimpedance gain of 58.5dBΩ, an area of 0.02mm2, and a bandwidth of 7.9GHz. The limiting amplifiers (LAs) following the TIA use negative impedance converters to enhance the bandwidth. The TIA and the LAs consume 5mW and 28.4mW, respectively with a supply voltage of 1.2v. ©2010 IEEE.

关键词： Operational amplifiers

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RECENT developments IN TYPE-II SUPERLATTICE BASED INFRARED DETECTORS.

RECENT DEVELOPMENTS IN TYPE-II SUPERLATTICE BASED INFRARED D...

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conference on Infrared Technology and Applications XXXvI

作者： Aifer, E. H. Maximenko, S. I. Yakes, M. K. Yi, C. Canedy, C. L. vurgaftman, I. Jackson, E. M. Nolde, J. A. Affouda, C. A. Gonzalez, M. Meyer, J. R. Clark, K. P. Pinsukanjana, P. R. USN Res Lab Washington DC 20375 USA Global Strategies Grp Crofton MD 21114 USA Intelligent Epitaxy Technol Inc Richardson TX 75081 USA

ISBN: (纸本)9780819481245

Much has been accomplished in the last few years in advancing the performance of type-II superlattice (T2SL) based infrared photodiodes, largely by focusing on device and heterostructure design. Quantum efficiency (QE) has increased to 50% and higher by using thicker absorbing layers and making use of internal reflections, and dark currents have been reduced by over a factor of ten by using bandstructure engineering to suppress tunneling and generation-recombination (G-R) currents associated with the junction. With performance levels of LWIR T2SL photodiodes now within an order of magnitude of that of HgCdTe (MCT) based technology, however, there is renewed interest in understanding fundamental materials issues. This is needed both to move performance toward the theoretical Auger limit, and to facilitate the task of transitioning T2SL growth from laboratories to commercial institutions. Here we discuss recent continuing efforts at NRL to develop new device structures for enhanced detector performance, and to further our understanding of this material system using advanced structural and electronic probes. Results from electron beam induced current (EBIC) imaging and analysis of point defects in T2SL photodiodes will be presented, showing differentiated behavior of bulk defect structures. We will also describe a study comparing intended vs. as-grown T2SL photodiode structures by cross-sectional scanning microscopy (XSTM). Using parameters extracted from the XSTM images, we obtain detailed knowledge of the composition and layer structures through simulation of the x-ray diffraction spectra.

关键词： Type-II superlattice strained layer superlattice III-v IR detector LWIR photodiode

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