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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"
1413 条 记 录,以下是91-100 订阅
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A 2GS/s 10-bit time-interleaved capacitive DAC for self-interference-cancellation application  16
A 2GS/s 10-bit time-interleaved capacitive DAC for self-inte...
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2021 International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design, SMACD 2021 and 16th conference on PhD Research in microelectronics and Electronics, PRIME 2021
作者: Eslami, Mazyar Abedinkhan Manstretta, Danilo Castello, Rinaldo Microelectronics Laboratory University of Pavia Pavia Italy
This article presents a 2-GS/s time-interleaved (TI) 10-bit capacitive digital-to-analog converter (CDAC) for self-interference-cancellation (SIC) application. It is also capable of working as a non-TI & stand-alo... 详细信息
来源: 评论
Analysis of Grid Integrated PV System for Different Load Power Factors
Analysis of Grid Integrated PV System for Different Load Pow...
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Recent Trends in microelectronics, Automation, Computing and Communications Systems (ICMACC), International conference on
作者: G. Lakshminarayana G. Sasi Kumar Adidela Vagdevi Department of EEE VNR Vignana Jyothi Institute of Engineering and Technology Hyderabad India
The growing apprehension over global warming, along with rising energy needs, has propelled the traditional power infrastructure towards greater reliability through integration of renewable energies into grid. Incorpo... 详细信息
来源: 评论
Multi-Scale Electrothermal Co-simulation of GaN HEMTs at the Device and Packaging Levels
Multi-Scale Electrothermal Co-Simulation of GaN HEMTs at the...
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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE
作者: Yi Zhang Ziyue Zhang Yuchao Wu Zhiying Chen Dong Lu Ke Xue Renjie Wang Smart Manufacturing Thrust HKUST(GZ) Guangzhou China Microelectronics Thrust HKUST(GZ) Guangzhou China College of Future Technology HKUST(GZ) Guangzhou China
Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) are critical for high-power and high-frequency applications but face challenges from self-heating and inadequate thermal management, which degrade perform... 详细信息
来源: 评论
modeling and optimization of supply sensitivity for a time-domain temperature sensor  16
Modeling and optimization of supply sensitivity for a time-d...
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2021 International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design, SMACD 2021 and 16th conference on PhD Research in microelectronics and Electronics, PRIME 2021
作者: Tan, Jun Ilmenau Germany
This paper presents a methodology for modeling and optimizing the supply sensitivity for a time-domain temperature sensor. Many modern System-on-Chip (SoC) designs integrate multiple functional blocks, such as sensors... 详细信息
来源: 评论
Russian Instrument Engineering on the Issue Development of Electronic Components and Application of Compact SPICE Models
Russian Instrument Engineering on the Issue Development of E...
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Informatics, Electronics, and Radio Engineering (PIERE), International conference Problems of
作者: Vladislav V. Bodrov Ivan L. Reva Novosibirsk State Technical University Novosibirsk Russia
At present, in the conditions of technological limitations, the most important task is the rapid restoration and modernization of the Russian microelectronics industry. And this is problematic without the appearance i... 详细信息
来源: 评论
A High-Resolution SAR ADC design with Linearity Enhancement Achieving Signal-to-Noise-and- Distortion-Ratio of 97.4dB  5
A High-Resolution SAR ADC Design with Linearity Enhancement ...
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5th IEEE International conference on Electronics Technology, ICET 2022
作者: Chen, Zulin Wang, Zongmin Zhang, Tieliang Yang, Song Yang, Long Beijing Microelectronics Technology Institute China Academy of Launch Vehicle Technology Beijing100076 China
Spaceborne industry and medical imaging equipment have been developed rapidly these years, resulting in the demand for system performance, integration level and energy efficiency in their signal chains. SAR ADCs that ... 详细信息
来源: 评论
Analysis and modeling of Non-ideal Effects in SAR ADC
Analysis and Modeling of Non-ideal Effects in SAR ADC
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International conference on ASIC
作者: Yaxin Zeng Hao Xu Xi Feng Na Yan State Key Laboratory of Integrated Chip and Systems Fudan University Shanghai China Beijing Smartchip Semiconductor Technology Co. Ltd Beijing Smartchip Microelectronics Technology Co. Ltd Beijing China
For high resolution SAR ADC, the noise and distortion will significantly degrade the performance, thus should be considered carefully during design. This paper presents a behavioral modeling of SAR ADC in Simulink. Th...
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An essay on the next generation of performance-driven analog/RF IC EDA tools: The role of simulation-based layout optimization  16
An essay on the next generation of performance-driven analog...
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2021 International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design, SMACD 2021 and 16th conference on PhD Research in microelectronics and Electronics, PRIME 2021
作者: Martins, Ricardo Gusmão, António Canelas, António Passos, Fábio Lourenço, Nuno Horta, Nuno Instituto de Telecomunicações Lisboa Portugal Instituto Superior Técnico Universidade de Lisboa Portugal Dialog Semiconductors Lisboa Portugal
Despite the fact that analog and radio-frequency (A/RF) integrated circuit (IC) design automation has been intensively studied in the last few decades, only automatic circuit-level sizing methodologies have achieved a... 详细信息
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Investigation of Methods for Expanding the Application of Integration Neural Network and Their Appropriate Structures
Investigation of Methods for Expanding the Application of In...
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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE
作者: Yoshiharu Iwata Hidefumi Wakamtsu Osaka University Graduate School of Eng. Osaka Japan
simulation-based optimization is increasingly used in the thermal design of power devices. However, using highly accurate simulations such as FEM often takes too much time and makes sufficient optimization difficult. ... 详细信息
来源: 评论
Investigation of Self-Heating Effect on the Void Embedded SOI MOSFETs
Investigation of Self-Heating Effect on the Void Embedded SO...
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IEEE Electron Devices Technology and Manufacturing conference (EDTM)
作者: Yizhan Liu Xiaoyan Liu School of Software and Microelectronics Peking University Beijing China School of Integrated Circuits Peking University Beijing China Beijing Advanced Innovation Center for Integrated Circuits Beijing China
Self-heating effect (SHE) in void embedded SOI (VESOI) MOSFET was analyzed using 3-D finite-element modeling (FEM) simulation. The induced void under the silicon channel improved short channel effect (SCE), however, d...
来源: 评论