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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"

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The use of extracted BSIM3v3 MOS parameters for quick manual design

The use of extracted BSIM3v3 MOS parameters for quick manual...

引用

International conference on microelectronics, ICM

作者： L.H. de Carvalho Ferreira T.C. Pimenta Universidade Federal de Itajubá Brazil Universidade Federal de Alagoas Itajuba Brazil

This work describes a new methodology for the extraction of DC parameters from BSIM3v3 MOS transistors. It takes into account some short channel effects not considered in the simplified level 1 model, thus providing corrections for the traditional MOS transconductance equations g/sub m/ and g/sub o/. The parameters are obtained using the minimum square method. The results show that the proposed method improves the precision of manual transistors' dimensions' calculations.

关键词： Semiconductor device modeling MOSFETs Extraterrestrial measurements Nonlinear equations Transconductance Circuit simulation Vectors CMOS process Manufacturing processes SPICE

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A new technique for designing high performance front-end sample and hold circuits

A new technique for designing high performance front-end sam...

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International conference on microelectronics, ICM

作者： Y. Chouia K. El-Sankary A. Saleh M. Sawan F. Ghannouchi PolySTIM Neurotechnology Laboratory Department of Electrical Engineering Ecole Polytechnique de Montrèal Montreal QUE Canada

Based on the behavioral modelisation of each element in a sample and hold (S/H) circuit, and using the Verilog-A language, such approach effectively allow us to get the best performances that the circuit can give. Using switched capacitor differential topology, double bootstrapped switches and several native transistors, we optimized with Verilog-A models the amplifier and the switches to end up with the optimized high performance circuit. Post layout simulation of the optimized circuit using CMOS 0.18 /spl mu/m technology with a V/sub DD/ of 1.8 V allowed to reach an SFDR of 88.6 dB for 20 MHz input signal. The circuit was integrated to other building blocks to construct a pipelined ADC which is now under fabrication.

关键词： Switching circuits Hardware design languages Switches CMOS technology Switched capacitor circuits Circuit topology Semiconductor device modeling Differential amplifiers Circuit simulation Integrated circuit technology

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Analog circuit behavioral modeling via wavelet collocation method with auto-companding

Analog circuit behavioral modeling via wavelet collocation m...

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Asia and South Pacific design Automation conference

作者： Jian Wang Jun Tao Xuan Zeng C. Chiang D. Zhou Microelectronics Department Fudan University Shanghai China Advanced Technology Group Synopsys Inc. Mountain View CA USA Electrical Engineering Department University of Texas Dallas Richardson TX USA

We propose an auto-companding technique for the analog behavioral modeling via wavelet collocation method. The companding function is automatically constructed according to the singularities of the input-output function of the circuit block. Such a general-purpose technique can be applied for the automatic modeling of arbitrary building block of arbitrary input-output function. Moreover, compared with the published modeling approaches, this method works more efficiently in reducing both the modeling error and the number of basis functions in wavelet expansion.

关键词： Analog circuits Function approximation Educational programs Space technology Circuit simulation Data mining Transfer functions Nonlinear circuits Educational technology Switching circuits

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IC schematic vulnerability to the temperature field distribution: Pre-layout estimation

IC schematic vulnerability to the temperature field distribu...

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International conference on microelectronics, MIEL

作者： I. Kazymyra M. Blyzniuk Institute of Telecommunications Radioelectronics and Electronic Devices Lviv Polytechnic National University Lviv Ukraine Lviv Ukraine

The approach for pre-layout estimation of the influence of non-uniformly distributed temperature field on ICs functioning has been presented in this paper. The technique for automatic synthesis of the models of ICs schematic vulnerability to local temperatures on the basis of the theory of computer experiment design is used here. Such models reflect the dependence of the temperature drift of circuit response on local temperatures of circuit elements. The qualitative and quantitative estimation of circuit vulnerability to temperature field distribution has been performed on the basis of the synthesised models.

关键词： Temperature distribution Integrated circuit modeling Circuit synthesis Temperature dependence Fault tolerance Mathematical model Analytical models Circuit simulation Circuit analysis Power dissipation

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Effect of metal layout design on passivation crack occurrence using both experimental and simulation techniques

Effect of metal layout design on passivation crack occurrenc...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： R.B.R. van Silfhout W.D. van Driel Y. Li M.A.J. van Gils J.H.J. Janssen G.Q. Zhang G. Tao J. Bisschop L.J. Ernst Philips CFT/Centre for Industrial Technology Eindhoven Netherlands Philips Semiconductors Nijmegen Netherlands Delft University of Technnology Delft Netherlands

Thermo-mechanical reliability is one of the concerns for semiconductor developments due to miniaturization, introduction of new materials, and higher application temperatures. FE modeling techniques are developed to predict the effect of IC interconnect metal designs on the thermo-mechanically-induced cracking of passivation layers. Experimental techniques on specially designed IC packages are developed to verify the predicted passivation cracks. With the verified 2D and 3D models, various simulations are performed and it is established that delamination of the IC/compound interface is a key trigger for passivation cracking. When delamination is present, crack occurrence is found to depend on the metal layout and location on the IC. Optimizing the metal layout design can even prevent passivation cracks. By combining efficient and accurate simulations with a limited number of experiments, passivation cracks can be quantitatively predicted prior to physical prototyping.

关键词： Passivation Integrated circuit modeling Thermomechanical processes Predictive models Delamination Materials reliability Semiconductor device reliability Semiconductor materials Temperature Iron

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Behavioral VHDL-AMS modeling of nuclear magnetic resonance sensor

Behavioral VHDL-AMS modeling of nuclear magnetic resonance s...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： S. Megherbi J.-C. Ginefri L. Darrasse G. Raynaud J.-F. Pone Institut d'Electronique Fondamentale University of Paris-Sud 11 France Unité de Recherche en Résonance Magnétique Médicale University of Paris-Sud 11 France

This paper describes the development of a model of a nuclear magnetic resonance (NMR) spiral coil sensor, using an analog hardware description. Our procedure implies several steps, with emphasis on model complexity reduction, identification of critical parameters and validation of experimental measurements. The proposed macro-model permits extremely fast simulation while providing nearly FEM accuracy. As a tool for coding the description of system level modelling, we use the analog hardware description language VHDL-AMS. For achieving the behavioural computation results, the SYSTEM VISION simulation environment from Mentor Graphics/spl reg/ was employed. In our proposed modelling, the different parts of the sensor and the different effects involved (electrical parameters, physical and magnetic coupling, loss effects) can be modelled within the same tool, together with the sensor environment: electrical command and detection circuit, time dependent magnetic field, and so on.

关键词： Nuclear magnetic resonance Magnetic sensors Computational modeling Spirals Coils Sensor phenomena and characterization Hardware design languages Computer vision Machine vision Circuit simulation

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Empirical validation of thermal dynamics in a silicon microthruster: influence of boundary conditions

Empirical validation of thermal dynamics in a silicon microt...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： M. Salleras I. Garcia J. Palacin M. Puig J. Samitier S. Marco Sistemes d'Instrumentació i Comunicacions Departament dElectrónica Universitat de Barcelona Barcelona Spain Departament d'Informática i Enginyería Industrial Universitat de Lleida Leida Spain

This paper investigates the influence of boundary conditions on the validation of a dynamic compact thermal model. The applied boundary conditions are used to consider the effect of the non-modelled parts of the microthruster. The values obtained through different optimization processes show the presence of local minima. This effect is overcome through a design of experiments, based on a central composite design. With the response surface fitted to the model error surface, a Monte-Carlo simulation is made, in order to obtain statistical information on the input parameters. Finally, the influence of the selected input parameters on the evolution of some relevant nodes is plotted. The thermal dynamics of these nodes, is to be predicted with a dynamic multiport compact thermal model.

关键词： Silicon Boundary conditions Uncertainty Response surface methodology Scattering parameters Finite element methods Solid modeling Material properties Sampling methods Predictive models

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Modelling microelectronic devices using VHDL-AMS : applications and comparisons

Modelling microelectronic devices using VHDL-AMS : applicati...

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IEEE International conference on Industrial Technology (ICIT)

作者： L.-A. Coyitangiye Pr.R. Grisel LEMI I.U.T. Rouen France

The VHDL-AMS hardware description language is suitable for analogue and mixed-signal applications. This paper attempts to exploit the rich expressiveness of this language to describe semiconductor devices. A pn-diode model is described with the lumped-charge concept of Linvill where charge transport equations are simplified and no conditional statements are needed. The model is tested with the Advance MS simulator.

关键词： microelectronics Circuit simulation Integrated circuit modeling Hardware design languages Computational modeling Semiconductor devices Electronic circuits Degradation Semiconductor diodes Integrated circuit technology

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Steady-state analysis of nonlinear circuits using discrete singular convolution method 04

Steady-state analysis of nonlinear circuits using discrete s...

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design, Automation and Test in Europe conference and Exhibition

作者： Xin Zhou Dian Zhou Jin Liu Ruiming Li Xuan Zeng Charles Chiang ECE Department University of Texas Dallas Richardson TX USA Microelectronics Department Fudan University Shanghai China Synopsys Inc. CA USA

ISBN: (纸本)9780769520858

In this paper, we propose a novel time-domain based method, discrete singular convolution algorithm, for computing steady-state response in nonlinear circuit. Properties and advantages of discrete singular convolution method are discussed, compared with some other approaches. The accuracy and efficiency of this method are tested by the numerical experiments.

关键词： Steady-state Circuit analysis Nonlinear circuits Convolution Time domain analysis Circuit simulation Educational programs Circuit testing Computational modeling Educational technology

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On a standard approach for substrate noise modelling in mixed signal IC's

On a standard approach for substrate noise modelling in mixe...

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International conference on microelectronics, ICM

作者： O. Valorge C. Andrei B. Vrignon F. Calmon C. Gontrand J. Verdier P. Dautriche STMicroelectronics Grenoble France Bât Blaise PASCAL LBM INSA Lyon Villeurbanne France STMicroelectronics Crolles France

An alternative way of using the ICEM model is described. This model is considering each part of a mixed signal design: the PCB, the package, the bonding wires, the padring and the core of the digital chip. By adding some elements to this model, we can simulate the transient substrate voltage induced by the digital part of a mixed signals integrated circuit. A test-chip was implemented in a 0.35 /spl mu/m BiCMOS process to validate this extended ICEM model. Some spice simulations of the modelled test-chip, running in many different configurations, are exposed. The results of those simulations are compared to measurements and reveal the advantages and drawbacks points of the methodology. We also describe what has to be done to apply this method to a realistic digital circuit.

关键词： Integrated circuit modeling Integrated circuit noise Circuit simulation Circuit testing Signal design Integrated circuit packaging Bonding Wires Voltage Mixed analog digital integrated circuits

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