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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"

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Reliable prediction of deep sub-quarter micron CMOS technology performance

Reliable prediction of deep sub-quarter micron CMOS technolo...

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IEEE conference on Nanotechnology

作者： V. Palankovski N. Belova T. Grasser H. Puchner S. Aronowitz S. Selberherr Institute for Microelectronics Technical University of of Vienna Vienna Austria

ISBN: (纸本)0780372158

We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing two-dimensional device simulation and automated Technology Computer Aided design (TCAD) optimization, and, finally, transient mixed-mode device/circuit simulation. The proposed methodology was tested on 0.25 /spl mu/m technology and applied to 0.13 /spl mu/m technology in order to estimate ring oscillator speed. The simulation results show an excellent agreement with available experimental data.

关键词： CMOS technology Calibration Optimized production technology Circuit simulation Computational modeling Medical simulation Implants Large scale integration Logic devices Computer simulation

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KSim: a stable and efficient RKC simulator for capturing on-chip inductance effect

KSim: a stable and efficient RKC simulator for capturing on-...

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Asia and South Pacific design Automation conference

作者： Hao Ji A. Devgan W. Dai CE Department University of California Santa Cruz Santa Cruz CA USA IBM Microelectronics Austin TX USA

ISBN: (纸本)0780366336

On-chip inductance extraction is difficult due to the global effect of inductance, and simulating the resulting dense partial inductance matrix is even more difficult. Furthermore, it is well known that simply discarding smallest terms to sparsify the inductance matrix can render the partial inductance matrix indefinite and result in an unstable circuit model. Recently a new circuit element, K, has been introduced to capture the global effect of inductance by evaluating a corresponding sparse K matrix. However, the reason that K has such local properties is not clear, and the positive semi-definiteness of the corresponding sparse K matrix is not proved. In this paper, we present the physical interpretation of K. Based on the physical interpretation, we explain why the faraway mutual K can be ignored (locality) and prove that after ignoring faraway mutual K, the resultant K matrix is positive definite (stability). Together with a RKC equivalent circuit model, the locality and stability enables us to simulate an RKC circuit directly and efficiently for real circuits. A new circuit simulation tool, KSim, has been developed by incorporating the new circuit element K into Berkeley SPICE. The RKC simulation matches better with the full partial inductance matrix simulation with significant less computing time and memory usage, compared to other proposed methods, such as the shift-truncate method.

关键词： Inductance Sparse matrices Circuit simulation Circuit stability Integrated circuit interconnections Coupling circuits SPICE Computational modeling microelectronics Wiring

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Test structure and method for capacitance extraction in multi-conductor systems

Test structure and method for capacitance extraction in mult...

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IEEE International conference on Microelectronic Test Structures

作者： B. Ward J. Bordelon S. Prior B. Tranchina Jiann Liu TestChip Technologies Inc. Plano TX USA 2600 Technology Drive Inc. Plano Texas Science-Based Industrial Park United Microelectronics Corporation Hsin-Chu City Taiwan R.O.C

A charge based capacitance measurement (CBCM) method is generalized to a multi-conductor system. The test structure and approach is applicable for characterizing multi-interconnect configurations representative of des... 详细信息

ISBN: (纸本)0780365119

关键词： System testing Integrated circuit interconnections Parasitic capacitance Capacitance measurement Circuit testing Circuit simulation Current measurement Delay Data mining Solid modeling

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A high speed high precision linear drive system for manufacturing automation

A high speed high precision linear drive system for manufact...

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Annual IEEE conference on Applied Power Electronics conference and Exposition (APEC)

作者： M.S.W. Tam N.C. Cheung Department of Electrical Engineering Hong Kong Polytechnic University Hong Kong China

ISBN: (纸本)0780366182

High speed and high precision linear motions are found in many industrial applications, such as the wire-bonding and die-bonding of microelectronic components. In order to achieve the tight requirements of future-generation semiconductor packaging machines, a high-performance linear drive system is developed. The linear drive system consists of linear permanent magnet synchronous motors (LPMSM) and a DSP-based fully digital PWM drive. To achieve high trajectory accuracy, a dual-rate multi-loop cascade control structure with velocity and acceleration feed-forward is employed. Also, a velocity observer is used to provide reliable and ripple free feedback information. To increase the current dynamics, overrated momentary high-voltage and high-current are injected to the actuator's coils, through the PWM drive. Finally, to reduce mechanical resonance during the high-speed start-stop operations, a third-order profile generator is developed and employed in the motion path generation process. This paper describes the development of such a linear drive system. The paper includes: (i) the construction and modeling of the permanent magnet synchronous linear drive; (ii) the simulation of the linear drive and the control system; (iii) the design and hardware implementation of the linear drive system; and (iv) the implementation result. The final result shows that the system is capable of 15 G acceleration and 1 micron position accuracy.

关键词： Pulse width modulation Acceleration Semiconductor device manufacture Manufacturing industries microelectronics Packaging machines Permanent magnet motors Velocity control Feedforward systems Feedback

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design modeling, and simulation in microelectronics

Design modeling, and simulation in microelectronics

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design, modeling, and simulation in microelectronics

This Volume 4228 of the conference proceedings contains 45 papers. Topics discussed include computer aided design for microelectronics and microelectromechanical devices, advanced design method, high level synthesis a... 详细信息

关键词： microelectronics

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design and analysis of RAM transparent March test for BIST implementation

Design and analysis of RAM transparent March test for BIST i...

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conference on design, modeling, and simulation in microelectronics

作者： Demidenko, S Henderson, S Massey Univ Inst Informat Sci & Technol Palmerston North New Zealand

New transparent memory test algorithms for semiconductor memory are presented in the paper along with the modified memory testing simulation package MAP. The test algorithms allow detecting memory read errors - the er... 详细信息

ISBN: (纸本)0819439002

关键词： semiconductor memory testing transparent March algorithms test simulation

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From MEMS to the global simulation of SoCs

From MEMS to the global simulation of SoCs

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conference on design, modeling, and simulation in microelectronics

作者： Rencz, M Székely, V Poppe, A Courtois, B MicReD Ltd. (Hungary) Technical Univ. of Budapest (Hungary) TIMA Lab. (France)

ISBN: (纸本)0819439002

This paper is dealing with design, simulation and test of microsystems (microelectromechanical systems, MEMS). Both existing tools and open research areas are addressed. All through the paper, similarities between the present development of MEMS and the development of microelectronics decades ago are pointed out, including the migration from point tools to Computer-Aided design (CAD) frameworks, testing, foundries/fabless business or Intellectual Property (IP) issues. Specific aspects such as thermal simulation of microstructures and thermomechanical design at the package level. The conclusion is depicting a possible global simulation scheme integrating the needs of Systems on Chip (SoCs) multilanguage simulation together with the needs of MEMS multipurpose simulation.

关键词： microsystems microelectromechanical systems CAD manufacturing testing packaging

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Diffusion current and thermal noise in short-channel MOSFETs

Diffusion current and thermal noise in short-channel MOSFETs

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conference on design, modeling, and simulation in microelectronics

作者： Obrecht, MS Manku, T Siborg Syst Inc Waterloo ON N2L 5B1 Canada

RF noise in short channel MOSFETs is discussed from the point of view of diffusion and drift current components. It is demonstrated that the access noise is due to a growing contribution of the diffusion current in a ... 详细信息

ISBN: (纸本)0819439002

关键词： noise NMOSFET simulation thermal high-frequency diffusion-drift

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A simple and accurate method of modeling spiral inductor up to six times its first self-resonant frequency

A simple and accurate method of modeling spiral inductor up ...

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conference on design, modeling, and simulation in microelectronics

作者： Ng, AC Chua, LH Ng, GI Law, CL Nanyang Technol Univ Sch Elect & Elect Engn Ctr Microelect Singapore 639798 Singapore

ISBN: (纸本)0819439002

A simple, yet accurate method of modeling the spiral inductor up to six times its first self-resonant frequency is presented. The proposed model, which is derived from the measured data with lumped elements, overcomes the limitation in the valid frequency range of the commonly adopted PI-model and the difficulty in the extraction of element values of broadband model consisting of a number of PI-model cascaded together. Its element values are extracted via systematic data fitting, with two element values to be varied at a time. Such systematic approach offers easy extension of its validity to a higher frequency without complicating the extraction methodology.

关键词： MMIC spiral inductor

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Behavioral modeling of short distance optical interconnects

Behavioral modeling of short distance optical interconnects

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conference on design, modeling, and simulation in microelectronics

作者： Mieyeville, F Jacquemod, G O'Connor, I Gaffiot, F Ecole Cent Lyon Lab Elect Optoelect & Microsyst UMR CNRS 5512 F-69131 Ecully France

ISBN: (纸本)0819439002

This paper presents the modeling of an optical link based on VCSELs (a promising generation of optical sources which appear well suited to photodetection). A physics-based model of a VCSEL has been established and validated. The complete optical link has been modeled including free space propagation, gaussian spatial repartition of light and photodetection. Concerning the photodetection, a low-noise, low-voltage, 2.5Gb/s CMOS photoreceiver is being designed, so as to complete the optical link. Furthermore, system parameters such as BER. (Bit Error Rate which call be extracted from the noise estimation) or power consumption can be determined. This results in a fully self-consistent model of a short distance optical interconnection that can be used to simulate board to board or chip to chip interconnections.

关键词： optical interconnect behavioral modeling VCSEL hardware description language CMOS amplifier

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