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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"

共 1413 条记录，以下是1241-1250 订阅

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Numerical simulation of micro-assembly of MEMS devices and post assembly electromechanical actuation

Numerical simulation of micro-assembly of MEMS devices and p...

引用

conference on design, modeling, and simulation in microelectronics

作者： Keating, DJ He, Y Finch, N Marchetti, J IntelliSense Corp Wilmington MA 01887 USA

ISBN: (纸本)0819439002

This paper presents the latest results on ongoing numerical simulation research of assembly and post-assembly analysis of MEMS devices. Evolving MEMS technologies, including the use of micro-fabricated hinges and gears, have enabled the fabrication of micro-assembled MEMS devices. Examples of these devices include tilting micromirrors, latching mechanisms, and micromotors. A simulation methodology has been developed that allows a MEMS designer to not only model the assembly process, but also to model the effects of various stimuli on the assembled device. Using these capabilities, a MEMS designer can investigate the necessary actuation forces, interfacing mechanisms, and time constraints for micro-assembly, as well as the performance of the device in its assembled state. These simulations rely on multi-stage non-rigid multi-entity contact analysis, dynamic analysis, and large displacement theory. Results are presented for a developed micromirror example. The assembly process for the "pop-up" micromirror mechanism are analyzed. After assembly, the coupled electromechanical actuation behavior will be studied. Changes in structural stress, stiffness, natural frequency, and mirror flatness are calculated and show a marked difference from the unstressed / undeformed shape. The newly developed algorithms allow designers to simulate and look into the details of phenomena often ignored in conventional MEMS design. Recent improvements in simulation methodologies allow micro-assembly analyses and post-assembly analyses of the resulting devices. By enabling micro-assembly and post-assembly analyses, we present the first reported MEMS analysis tool capable of modeling the latching mechanisms and post-latching actuation that frequently control current MEMS devices.

关键词： contact analysis micro-assembly electromechanical actuation CAD MEMS IntelliSuite

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Multilevel transmission line macromodeling and latency for the time domain simulation

Multilevel transmission line macromodeling and latency for t...

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conference on design, modeling, and simulation in microelectronics

作者： Hwangkhunnatham, M Leelarasmee, E Chulalongkorn Univ Dept Elect Engn Bangkok 10330 Thailand

ISBN: (纸本)0819439002

This paper presents a multilevel transmission line companion macromodel based on the segmentation modeling for the time domain simulation. The techniques described in this work exploits the characteristic properties of the segmented transmission line model for a more efficient analysis. At each timepoint, multilevel transmission line macromodels will be internally computed and only its simplest macromodel will replace the transmission line in the network for performing the time domain analysis. This analysis yields the terminal voltages of the transmission line that are used as input voltage sources for another analysis that involves only the transmission line. This second analysis gives the values of the internal variables of the transmission Line and updates the values of its internal variables to be used at the next timepoint. Both of these analysis can be done efficiently by exploiting the identical properties of each subsegment of the transmission line model. Furthermore, if at any time tk the value of the input variables of a subsegment do not change its value from its previous timepoint, then its value at all the subsequent time steps will remain the same until a change in the input variables of the subsegment occurs. The latent subsegment variables can thus be used in the upper level without recomputation. Test results show that this multilevel macromodeling can speed up the computation about 10 times compared with direct calculation without macromodeling. After the latency technique is applied, a 50% speed improvement can be further achieved while yielding almost identical numerical results.

关键词： multilevel transmission line macromodeling time domain simulation latency

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Extraction of VBIC model for SiGeHBTs made easy by going through Gummel-Poon model

Extraction of VBIC model for SiGeHBTs made easy by going thr...

引用

conference on design, modeling, and simulation in microelectronics

作者： Lin, FJ Zhou, TS Chen, B Ooi, BL Kooi, PS Agilent Technol SMMC Singapore 119958 Singapore

ISBN: (纸本)0819439002

A new parameter extraction methodology - local ratio evaluation is presented which is well suited for converting one model to another. An example is given for VBIC model extraction by going through Spice Gummel-Poon (SGP) model. It is based on the fact that the VBIC model is a direct enhancement and extension of SGP model. Firstly, the standard SGP model is extracted in the standard way. Then, SGP model parameters are directly converted to VBIC model. Next, local modifications are carried out for those parameters that are affected by different equations used in the two models. Finally, new model parameters for enhanced modeling features are introduced by evaluating the difference between measurement and simulation.

关键词： parameter extraction bipolar transistor modeling compact models SiGeHBT VBIC model conversion

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Analysis of fault coverage and simulation of test data compactors for on-line testing control units

Analysis of fault coverage and simulation of test data compa...

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conference on design, modeling, and simulation in microelectronics

作者： Demidenko, SN Massey Univ Inst Informat Sci & Technol Palmerston North New Zealand

ISBN: (纸本)0819439002

The paper is related to synthesis of concurrently self-testing control units providing pre-defined level of fault coverage. Compaction (compression) of test data is one of the core elements of on-line monitoring over control flow execution in terms of its integrity and correctness. Traditionally, the most widely employed compression algorithm is so-called Signature Compression. It is based on the well-established theory on cyclic coding. Cyclic coding and related error correction are very efficient tools when errors lead to inversion of some bits in the initial bit sequence. However, error types and corresponding fault models in case of control unit monitoring are different. Two new fault models for control unit test data are introduced in the paper - shortening and lengthening of the bit sequence being compressed. Results of simulation and comparison of several compression algorithms for these fault models are presented in the paper. The control units of micro-programmed type are considered through out the paper though the results can be applicable to other control unit architectures.

关键词： synthesis on-line self-checking control units fault coverage test data compression

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RF modeling of MOSFETs

RF modeling of MOSFETs

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conference on design, modeling, and simulation in microelectronics

作者： Deen, MJ Chen, CH Naseh, S Cheng, Y Matloubian, M McMaster Univ CRL 226 Hamilton ON L8S 4K1 Canada

ISBN: (纸本)0819439002

This paper reviews and also discusses some of the important issues in MOSFET modeling for radio frequency integrated circuits (RFICs). A brief review of some popular or common MOSFET models that can predict the RF properties of MOSFETs is presented. At present, these include BSIM3v3, EKV, MOS Model 9 and adaptations of HSPICE models, and most of them are discussed here. Attention is paid to RF noise parameter extraction and modeling of MOSFETs, since this has been relatively neglected compared to the AC modeling and parameter extraction. Finally, some new and exciting results on the effects of DC electrical stresses on the microwave properties of NMOSFETs, especially the unity current-gain frequencies and maximum oscillation frequencies are presented for different stress times and at different biasing conditions. modeling of the effects of stress on the RF properties of MOSFETs is still to be investigated.

关键词： RFICs RF MOS RF modeling RF MOS noise modeling RF MOS noise parameters RF MOS models

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Parallel unstructured grid DSMC for the study of molecular gas dynamics in semi-conductor manufacturing

Parallel unstructured grid DSMC for the study of molecular g...

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conference on design, modeling, and simulation in microelectronics

作者： Singh, A Yong, Z Nanyang Technol Univ Sch Mech & Prod Engn Singapore Singapore

ISBN: (纸本)0819439002

This paper describes the implementation aspects of a two dimensional, unstructured grid based Direct simulation Monte Carlo (DSMC) flow solver for the study of molecular gas dynamics found in thin film deposition processes. A localized data structure based on domain decomposition is developed to improve the particle/molecule tracking, which is otherwise computationally intensive. The method has been implemented on a massively parallel computing platform for shortened simulation time. Results are validated against known analytical solutions and published results. Furthermore, the influence of parameters, such as sticking coefficient and aspect ratio for step coverage on a 1 mum wide trench by sputter deposition was studied. The results show that the step coverage deteriorates with increasing sticking coefficient and aspect ratio.

关键词： Direct simulation Monte Carlo rarefied gas dynamics unstructured grid/mesh parallel computing thin film

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Partially depleted silicon-on-insulator (SOI): A device design/modeling and circuit perspective 12

Partially depleted silicon-on-insulator (SOI): A device desi...

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12th International conference on microelectronics (ICM 2000)

作者： Assaderaghi, F Shahidi, G Fung, S Sherony, M Wagner, L Sleight, J Lo, SH Wu, K Chen, TC IBM Corp Semicond Res & Dev Ctr Hopewell Jct NY 12533 USA

ISBN: (纸本)9643600572

This paper reviews the evolution of partially depleted (PD) CMOS SOI technology at IBM. Several aspects of this development leading to successful fabrication of high-performance microprocessors are discussed. They include SOI-specific device design and process modifications;creation of compact device models for circuit simulation (SPICE-like models);and development of circuit styles and strategies employed in the design of CMOS VLSI on PD SOI. Since these strategies address issues and problems that arise on PD SOI circuits such as delay hysteresis, and noise margin reduction, they will be discussed in detail. Although many aspects of CMOS design pertaining to SOI will be covered, the emphasis will be on dynamic and static circuits and high-performance SRAM's.

关键词： Silicon on insulator technology

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CAD modeling of scratch drive actuation

CAD modeling of scratch drive actuation

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conference on design, modeling, and simulation in microelectronics

作者： Finch, N Marchetti, J Fujita, H Gouy, J IntelliSense Corp Wilmington MA 01887 USA

ISBN: (纸本)0819439002

Assembled MEMS structures provide a unique design opportunity by overcoming the inherent planarity of the MEMS fabrication process, allowing for added flexibility and new application areas. However, post-process assembly of these devices is frequently problematic. Force and displacement controls are often imprecise at the microscale resulting in damage to the device. In contrast, self-assembling MEMS structures can avoid external manipulation and therefore can be less likely to suffer damage. Self-assembly, though, requires the added complexity of integrated actuation. One type of integrated actuation is driven by scratch drives. Scratch drive actuation is an electrostatic phenomenon that results when a suspended plate with an attached bushing is attracted to a flat plate. The attraction causes snap-down and zippering, pushing the bushing forward. When the charge is released, the plates separate, but the bushing remains in position, causing a horizontal displacement. This process can be repeated to generate forward motion. This paper demonstrates a new CAD capability, the modeling of scratch drive actuation. modeling any type of self-assembly necessarily involves extensive contact analysis capabilities. In the case of scratch drives, a full actuation cycle consisting of pull-in, zippering, and release - must be modeled. This capability will be demonstrated by considering a polysilicon scratch drive actuator that was developed by researchers at the University of Tokyo. Their findings show that the distances the scratch drives travel in each step are approximately 0.1 mum and depend on the peak voltage, suspended plate length, and bushing height. Now, with CAD advances, such as fully coupled electro-mechanical contact analysis and post contact analysis in IntelliSuite (TM), these devices can be simulated accurately prior to fabrication. This paper describes the simulation methodology and provides a comparison with measured results.

关键词： CAD MEMS simulation actuators electrostatic scratch drive

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A modular approach for simulation-based optimization of MEMS

A modular approach for simulation-based optimization of MEMS

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conference on design, modeling, and simulation in microelectronics

作者： Schneider, P Huck, E Reitz, S Parodat, S Schneider, A Schwarz, P Fraunhofer Inst Integrated Circuits Dept EAS Dresden D-01069 Dresden Germany

ISBN: (纸本)0819439002

The importance of MEMS optimization concerning performance, power consumption, and reliability increases. In the MEMS design flow a variety of specialized tools is available. For simulation on component level FEM tools (e.g. ANSYS, CFDACE+) are widely used. simulations on system level are carried out with simplified models using simulators like Saber, ELDO or Spice. A few simulators offer tool-specific optimization capabilities but there is a lack of simulator independent support of MEMS optimization. Our approach aims at a flexible combination of simulators and optimization algorithms by partitioning the optimization cycle. This new method is translated into a modular optimization system implemented in JAVA. The main parts (modules) are: simulation: System behavior is calculated with the actual design parameters. This computation can be a simple evaluation of equations of a complex simulation with a FEM tool or a system simulator, respectively. Error calculation: simulation results and the specified system behavior are used to calculate the error value (the design objective function) in the actual optimization step. Optimization: The error value is used to compute the new vector of design parameters. Model instantiation: The new parameter values are used to modify the generic model for a new simulation run. The implemented optimization algorithms are: methods without derivatives (e.g. Nelder-Mead-Simplex), methods using derivatives (e.g. Conjugate Gradient or Quasi-Newton) and stochastic approaches (e.g. Simulated Annealing). Interfaces to the simulators ANSYS, ELDO, Saber, and SPICE are implemented. Thus the optimization task can be solved on different levels of model abstraction (FEM, ordinary differential equations, generalized networks,...). A graphical user interface (GUI) supports control and visualization of the optimization progress. The modules of the optimization system may communicate via the internet (web-based optimization, distributed optimization). T

关键词： optimization micro system heterogeneous systems MEMS modular optimization system distributed optimization via Internet multi-level simulation FEM system simulation

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Mixed-mode device simulation

Mixed-mode device simulation

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International conference on microelectronics, MIEL

作者： T. Grasser S. Selberherr Institute for Microelectronics Technical University of of Vienna Vienna Austria

In mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much higher accuracy is obtained. We review the state of the art in mixed-mode device simulation. In addition we present recent achievements, in particular, techniques for convergence acceleration and methods for dealing with electrothermal problems. Much emphasis is put on the examples section to demonstrate the value and usefulness of the proposed techniques.

关键词： Circuit simulation MOSFETs Geometry Solid modeling Medical simulation Partial differential equations Data mining design optimization Filters Computer aided analysis

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