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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"

共 1413 条记录，以下是1261-1270 订阅

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Physics based modeling of simultaneous switching noise in high speed systems

Physics based modeling of simultaneous switching noise in hi...

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Electronic Components and Technology conference (ECTC)

作者： Sungjun Chun M. Swaminathan L.D. Smith J. Srinivasan Zhang Jin M.K. Iyer School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA USA Sun Microsystems Palo Alto CA USA Advanced Packaging Development Support Department Institute of Microelectronics Singapore

Simultaneous Switching Noise (SSN) has become a major bottleneck in high speed digital design. For future systems, modeling SSN can be complex due to the thousands of interconnects that need to be analyzed. This is because a system level modeling approach is necessary that combines the chip, package and board level interactions. This paper presents an efficient method to model the SSN for high speed systems by developing circuit models for the planes and interconnections that can be combined using superposition. This approximation is valid at frequencies where skin effect is dominant. simulation results are compared with the measurements on a Test Vehicle, verifying the validity of the method.

关键词： Physics Solid modeling Electronics packaging Integrated circuit interconnections Equations Frequency Skin effect Circuit simulation Switching circuits Integrated circuit noise

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Characterization and modeling of a GaAs HFET toward design of linear 2.4 GHz high power amplifier

Characterization and modeling of a GaAs HFET toward design o...

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Asia-Pacific conference on Microwave

作者： A. Khusaidi M.A. Riyadi B.R. Alam RF Device & IC Research Group Department of Electrical Engineering Institute of Technology Bandung InterUniversity Research Center on Microelectronics Bandung Indonesia

A large signal HFET model based on the Curtice-Cubic model is constructed. Power GaAs HFET transistor SHF0186K is adopted for extraction. The DC and S-parameters characteristics of the transistor are used to derive th... 详细信息

ISBN: (纸本)078036435X

关键词： Gallium arsenide HEMTs MODFETs High power amplifiers Linearity Scattering parameters Power amplifiers Power system modeling Microwave transistors Low-noise amplifiers

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Mapping matrix multiplication algorithm onto optimal fault-tolerant systolic array

Mapping matrix multiplication algorithm onto optimal fault-t...

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International conference on microelectronics, MIEL

作者： I.Z. Milovanovic T.I. Tokic M.K. Stojcev E.I. Milovanovic N.M. Novakovic Fac. of Electron. Eng. Nis Univ. Serbia Faculty of Electronic Engineering University of Niš Nis Yugoslavia Univerzitet u Nisu Nis RS

An approach to the design of fault-tolerant hexagonal systolic array (SA) for matrix multiplication is described. The approach comprises of three steps. First, redundancies are introduced at the computational level by deriving three equivalent algorithms but with disjoint index spaces. Second, we perform the accommodation of index spaces to the projection direction to obtain a hexagonal SA with an optimal number of processing elements (PE) for a given problem size. Finally, we perform mapping of the accommodated index spaces using a valid transformation matrix. As a result we obtain an SA with an optimal number of PEs which perform fault-tolerant matrix multiplication. In the case of square matrices of order N/spl times/N this array comprises N/sup 2/+2N PEs.

关键词： Fault tolerance Systolic arrays Circuit faults Redundancy Argon Linear algebra Computational modeling Circuit simulation Digital control Concurrent computing

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Efficient prediction of interconnect crosstalk using neural networks

Efficient prediction of interconnect crosstalk using neural ...

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International conference on Tools for Artificial Intelligence (ICTAI)

作者： A.A. Ilumoka Pettit Microelectronics Research Center Georgia Institute of Technology Atlanta USA

Interconnect crosstalk prediction has become increasingly important with deep submicron downscaling of ICs and wafer scale integration. Existing tools for management of the emi problem are computationally expensive and not very broad in application. The unique approach proposed involves the creation of parameterized models of primitive interconnect structures, wirecells, using modular artificial neural networks (MANNs). The finite element method, a circuit simulator and a neural network multi-paradigm prototyping system are coupled together to produce a library of re-usable MANN-based wirecell models. The method is especially attractive because it is capable of modeling the simultaneous effect of several uncorrelated variables such as interconnect length, width, thickness, separation, conductor and insulating medium characteristics on crosstalk and delay. Equi-coupling contours called isocouples are derived for noise characterization to guide design activities such as placement (e.g. matched devices placed on same isocouple). Experimental results from a transconductance amplifier demonstrate the viability of the approach.

关键词： Crosstalk Integrated circuit interconnections Artificial neural networks Wafer scale integration Semiconductor device modeling Finite element methods Computational modeling Circuit simulation Virtual prototyping Coupling circuits

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Development and application of a macro model for flash EEPROM design

Development and application of a macro model for flash EEPRO...

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Annual IEEE International ASIC/SOC conference

作者： M. O'Shea A. Concannon K. McCarthy B. Lane A. Mathewson M. Slotboom National Microelectronics Research Centre Cork Ireland Philips Research Laboratories Eindhoven Netherlands

The inclusion of embedded flash memory in systems-on-chip designs enables the addition of many new features. However to enable designers to embed flash memory in an efficient and competent manner, they must have the capability to simulate full circuit operation. Therefore a flexible flash EEPROM model is required. An accurate and numerically efficient model for the transient and DC characteristics of Fowler Nordheim (FN) based Flash EEPROM cells has been developed. The model has been extensively validated, using read, program and erase operations. The model has also been applied to several applications, in a typical structure. These display the ability of the model to accelerate the design cycle for applications which require flash memory.

关键词： EPROM Nonvolatile memory Flash memory Electrons Semiconductor device modeling Circuit simulation Acceleration CMOS process Costs Threshold voltage

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An integrated plasma equipment-feature scale model for ionized metal physical vapor deposition

An integrated plasma equipment-feature scale model for ioniz...

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IEEE International conference on Plasma Science (ICOPS)

作者： Junqing Lu M.J. Kushner Dept. of Mech. & Ind. Eng. Illinois Univ. Urbana IL USA Department of Electrical and Computer Engineering University of Illinois Urbana IL USA

Summary form only given. Ionized metal physical vapor deposition (IMPVD) is used to deposit diffusion barriers and metal seed layers into high aspect ratio trenches for interconnect wiring in the fabrication of microelectronics devices. To decrease the RC time delay of signals, Cu interconnects are replacing Al whose resistance is almost twice that of Cu. To improve the design of IMPVD systems, it is useful to have a comprehensive simulator. To address this need, an integrated plasma equipment-feature model has been developed, and applied to the investigation of Cu IMPVD. The computational tools use in this study are the two-dimensional Hybrid Plasma Equipment Model (HPEM), the Plasma Chemistry Monte Carlo simulation (PCMCS) and the Monte Carlo feature profile model (MCFPIM). The HPEM produces species densities and source functions in the bulk plasma. The PCMCS computes the trajectories of ions and neutral species which are incident onto features based on the species densities and sources from the HPEM. The MCFPM uses these fluxes to simulate the deposition profile in a trench. The MCFPM, originally written for etching, was extended to deposition by adding surface diffusion algorithms. These algorithms use Monte Carlo techniques to move adsorbed pseudoparticles on the surface employing probabilities based on the local inter-particle potentials.

关键词： Plasma applications Plasma chemistry Plasma density Plasma simulation Plasma sources Plasma devices Computational modeling Monte Carlo methods Chemical vapor deposition Wiring

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design and simulation of a micromirror array for a projection TV

Design and simulation of a micromirror array for a projectio...

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conference on design, Characterization, and Packaging for MEMS and microelectronics

作者： Choi, B Lee, J Jung, K Shin, H Sogang Univ Dept Engn Mech Mapo Gu Seoul 121742 South Korea

ISBN: (纸本)0819434949

The design of a micromirror for a projection TV is investigated. A static structural analysis is performed to give an optimal shape of the micromirror using the FEM(finite-element method) commercial package, ANSYS. A solid modeling is created, and mapped meshes are applied to it in order to satisfy a symmetric condition. A stress analysis shows that, maximum stress does not exceed an allowable stress, which is the yield strength. A modal analysis is also executed to find the approximate natural frequencies with different design parameters. The result can be utilized to see which design parameter is strongly dominant. The micromirror was fabricated by Samsung Electronics. Dynamic deflection experiments confirm the results of the simulation.

关键词： projection TV micromirror FEM structural analysis modal analysis

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Efficient ANN-based interconnect delay and crosstalk modeling

Efficient ANN-based interconnect delay and crosstalk modelin...

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22nd International conference on microelectronics (MIEL 2000)

作者： Ilumoka, A. Univ of Hartford Hartford CT United States

ISBN: (纸本)0780352351

The dominance of system performance by interconnect delay in deep-submicron design presents many challenges to physical design tool developers. This paper presents an efficient ANN-based technique for modeling interconnect crosstalk in integrated circuits. ANN models for user-defined interconnect primitives called wirecells are trained and tested using a database created using a suitable simulation package. For fixed wirecell length and geometry, inputs to the ANN include signal frequency, input voltage amplitude, near and far end termination impedances. Outputs derived from the ANN include crosstalk voltage peak and RMS values and spectral composition. Experimental results demonstrate the ability of this approach to successfully predict coupled noise in modest cpu times compared with existing approaches.

关键词： Integrated circuit layout

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Reactor and process modeling in optoelectronics device fabrication

Reactor and process modeling in optoelectronics device fabri...

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conference on Physics and simulation of Optoelectronic Devices VII

作者： Meyyappan, M Bose, D NASA Ames Res Ctr Moffett Field CA 94035 USA

ISBN: (纸本)0819430951

Computational modeling of reactors and processes has gained wide acceptance in the microelectronics industry. Commercial software are readily available and routinely used at the design stage to reduce design cycle and cost of development. The optoelectronics community can benefit from these advances since many of the processing steps are common, though material chemistries, device configuration and wafer size are different. This paper provides an overview of reactor and process models and specific applications to nitride MOCVD, hydride vapor epitaxy of GaN, SiC CVD and etching of m-V compounds using chlorine chemistry.

关键词： reactor model deposition etching computer simulation nitride growth chlorine plasma chemistry virtual reactor

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Optimizing the simulation of bipolar transistor packages using sliding mode techniques

Optimizing the simulation of bipolar transistor packages usi...

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conference on design, Characterization, and Packaging for MEMS and microelectronics

作者： Mkrttchian, V Simonyan, A Mkrtchyan, K Stat Engn Univ Armenia Yerevan 375009 Armenia

ISBN: (纸本)0819434949

modeling packaged electronic elements is encumbered by parasitic effects and discontinuities causing enlarged parameters and is done using numerical field simulation in reference to results of on-wafer measurements and calculated emitter inductance. Package simulation has revealed certain problems with discontinuities and disruption of automatic adjustment that can be eliminated using the sliding mode characterized by reduced order of mathematical support and feedback from discontinuities. Analysis of bipolar transistor models shows inadequacies of currently accepted concepts of dynamic systems, with high factors of uncertainty due to unambiguous solutions. RF measurements of prospective transistors can be done using wafer measuring techniques. The smooth RF characteristics of the interior transistor as well as a limited number of parameters yield a model with good agreement for both DC- and RF characteristics. It is our purpose to achieve a model suitable for use with all types of circuit simulations. The ports for chip connection are concentrated or internal ports defined by voltage and current. The resulting S-parameters of the ports are used to extract equivalent circuit elements leading to well define values with physical sense. The essential components of the packaging model are the sliding mode indicator, observer and the anticipatory device.

关键词： simulation sliding mode indicator observer the anticipatory device

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