检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

1,367 篇 会议
46 篇 期刊文献
6 册 图书

馆藏范围

1,419 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

615 篇 工学
- 387 篇 电气工程
- 246 篇 电子科学与技术（可...
- 221 篇 计算机科学与技术...
- 128 篇 材料科学与工程（可...
- 119 篇 软件工程
- 89 篇 机械工程
- 66 篇 动力工程及工程热...
- 59 篇 控制科学与工程
- 42 篇 化学工程与技术
- 35 篇 信息与通信工程
- 31 篇 仪器科学与技术
- 23 篇 力学（可授工学、理...
- 15 篇 冶金工程
- 15 篇 生物医学工程（可授...
- 10 篇 建筑学
- 9 篇 光学工程
- 9 篇 土木工程
- 8 篇 交通运输工程
- 8 篇 安全科学与工程
- 7 篇 生物工程
255 篇 理学
- 146 篇 物理学
- 116 篇 数学
- 45 篇 化学
- 22 篇 系统科学
- 10 篇 生物学
- 10 篇 统计学（可授理学、...
38 篇 管理学
- 37 篇 管理科学与工程(可...
8 篇 医学
- 7 篇 临床医学
- 6 篇 基础医学(可授医学...
- 5 篇 药学(可授医学、理...
4 篇 法学
4 篇 艺术学
2 篇 农学
1 篇 经济学
1 篇 教育学

主题

272 篇 computational mo...
230 篇 integrated circu...
190 篇 circuit simulati...
179 篇 microelectronics
126 篇 semiconductor de...
115 篇 analytical model...
107 篇 solid modeling
96 篇 mathematical mod...
65 篇 simulation
61 篇 silicon
58 篇 predictive model...
53 篇 hardware design ...
53 篇 micromechanical ...
50 篇 load modeling
50 篇 hardware
49 篇 cmos technology
47 篇 spice
45 篇 design automatio...
43 篇 logic gates
42 篇 finite element a...

机构

13 篇 institute of mic...
13 篇 institute of mic...
12 篇 institute of mic...
7 篇 institute of mic...
6 篇 department of mi...
6 篇 institute of mic...
6 篇 department of mi...
6 篇 school of softwa...
5 篇 school of microe...
5 篇 nxp semiconducto...
5 篇 national microel...
5 篇 school of microe...
5 篇 institute of mic...
5 篇 philips applied ...
5 篇 imec leuven
5 篇 institute of mic...
5 篇 amic angewandte ...
5 篇 agilent technol ...
5 篇 delft university...
4 篇 shanghai researc...

作者

10 篇 xiaowu zhang
10 篇 roca e.
9 篇 castro-lopez r.
9 篇 a. napieralski
8 篇 rodriguez r.
8 篇 nafria m.
7 篇 l.j. ernst
7 篇 g.q. zhang
7 篇 martin-martinez ...
7 篇 sven rzepka
7 篇 fernandez f. v.
7 篇 s. selberherr
7 篇 zhang gq
6 篇 andrzej napieral...
6 篇 m.k. iyer
6 篇 ru huang
6 篇 n. ranganathan
6 篇 k.m.b. jansen
5 篇 khaoula mbarek
5 篇 sami ghedira

语言

1,403 篇 英文
10 篇 中文
3 篇 德文
3 篇 其他

检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"

共 1419 条记录，以下是1261-1270 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

Control and dynamic analysis of a static VAr compensator using a three level inverter topology

Control and dynamic analysis of a static VAr compensator usi...

引用

International conference on microelectronics, ICM

作者： A. Draou M. Benghanem A. Tahri Applied Power Electronics Laboratory Institute of Electrotechnics University of Sciences and Technology Houari Boumediene Oran Algeria

ISBN: (纸本)9643600572

This paper presents a novel study of the dynamic performance analysis of an advanced static VAr compensator (ASVC) using a three-level voltage source inverter. The analysis is based on the modelling of the system in the d-q axis. The dynamic behaviour of the system is further analysed using MATLAB through a set of simulation tests. The results obtained may lead to correct design of a robust controller for reactive power applications.

关键词： Static VAr compensators Performance analysis Voltage Inverters Mathematical model Power system modeling MATLAB Analytical models System testing Robust control

来源：评论

学校读者我要写书评

暂无评论

Physics based modeling of simultaneous switching noise in high speed systems

Physics based modeling of simultaneous switching noise in hi...

引用

Electronic Components and Technology conference (ECTC)

作者： Sungjun Chun M. Swaminathan L.D. Smith J. Srinivasan Zhang Jin M.K. Iyer School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA USA Sun Microsystems Palo Alto CA USA Advanced Packaging Development Support Department Institute of Microelectronics Singapore

Simultaneous Switching Noise (SSN) has become a major bottleneck in high speed digital design. For future systems, modeling SSN can be complex due to the thousands of interconnects that need to be analyzed. This is because a system level modeling approach is necessary that combines the chip, package and board level interactions. This paper presents an efficient method to model the SSN for high speed systems by developing circuit models for the planes and interconnections that can be combined using superposition. This approximation is valid at frequencies where skin effect is dominant. simulation results are compared with the measurements on a Test Vehicle, verifying the validity of the method.

关键词： Physics Solid modeling Electronics packaging Integrated circuit interconnections Equations Frequency Skin effect Circuit simulation Switching circuits Integrated circuit noise

来源：评论

学校读者我要写书评

暂无评论

Characterization and modeling of a GaAs HFET toward design of linear 2.4 GHz high power amplifier

Characterization and modeling of a GaAs HFET toward design o...

引用

Asia-Pacific conference on Microwave

作者： A. Khusaidi M.A. Riyadi B.R. Alam RF Device & IC Research Group Department of Electrical Engineering Institute of Technology Bandung InterUniversity Research Center on Microelectronics Bandung Indonesia

A large signal HFET model based on the Curtice-Cubic model is constructed. Power GaAs HFET transistor SHF0186K is adopted for extraction. The DC and S-parameters characteristics of the transistor are used to derive th... 详细信息

ISBN: (纸本)078036435X

关键词： Gallium arsenide HEMTs MODFETs High power amplifiers Linearity Scattering parameters Power amplifiers Power system modeling Microwave transistors Low-noise amplifiers

来源：评论

学校读者我要写书评

暂无评论

Mapping matrix multiplication algorithm onto optimal fault-tolerant systolic array

Mapping matrix multiplication algorithm onto optimal fault-t...

引用

International conference on microelectronics, MIEL

作者： I.Z. Milovanovic T.I. Tokic M.K. Stojcev E.I. Milovanovic N.M. Novakovic Fac. of Electron. Eng. Nis Univ. Serbia Faculty of Electronic Engineering University of Niš Nis Yugoslavia Univerzitet u Nisu Nis RS

An approach to the design of fault-tolerant hexagonal systolic array (SA) for matrix multiplication is described. The approach comprises of three steps. First, redundancies are introduced at the computational level by deriving three equivalent algorithms but with disjoint index spaces. Second, we perform the accommodation of index spaces to the projection direction to obtain a hexagonal SA with an optimal number of processing elements (PE) for a given problem size. Finally, we perform mapping of the accommodated index spaces using a valid transformation matrix. As a result we obtain an SA with an optimal number of PEs which perform fault-tolerant matrix multiplication. In the case of square matrices of order N/spl times/N this array comprises N/sup 2/+2N PEs.

关键词： Fault tolerance Systolic arrays Circuit faults Redundancy Argon Linear algebra Computational modeling Circuit simulation Digital control Concurrent computing

来源：评论

学校读者我要写书评

暂无评论

Efficient prediction of interconnect crosstalk using neural networks

Efficient prediction of interconnect crosstalk using neural ...

引用

International conference on Tools for Artificial Intelligence (ICTAI)

作者： A.A. Ilumoka Pettit Microelectronics Research Center Georgia Institute of Technology Atlanta USA

Interconnect crosstalk prediction has become increasingly important with deep submicron downscaling of ICs and wafer scale integration. Existing tools for management of the emi problem are computationally expensive and not very broad in application. The unique approach proposed involves the creation of parameterized models of primitive interconnect structures, wirecells, using modular artificial neural networks (MANNs). The finite element method, a circuit simulator and a neural network multi-paradigm prototyping system are coupled together to produce a library of re-usable MANN-based wirecell models. The method is especially attractive because it is capable of modeling the simultaneous effect of several uncorrelated variables such as interconnect length, width, thickness, separation, conductor and insulating medium characteristics on crosstalk and delay. Equi-coupling contours called isocouples are derived for noise characterization to guide design activities such as placement (e.g. matched devices placed on same isocouple). Experimental results from a transconductance amplifier demonstrate the viability of the approach.

关键词： Crosstalk Integrated circuit interconnections Artificial neural networks Wafer scale integration Semiconductor device modeling Finite element methods Computational modeling Circuit simulation Virtual prototyping Coupling circuits

来源：评论

学校读者我要写书评

暂无评论

Development and application of a macro model for flash EEPROM design

Development and application of a macro model for flash EEPRO...

引用

Annual IEEE International ASIC/SOC conference

作者： M. O'Shea A. Concannon K. McCarthy B. Lane A. Mathewson M. Slotboom National Microelectronics Research Centre Cork Ireland Philips Research Laboratories Eindhoven Netherlands

The inclusion of embedded flash memory in systems-on-chip designs enables the addition of many new features. However to enable designers to embed flash memory in an efficient and competent manner, they must have the capability to simulate full circuit operation. Therefore a flexible flash EEPROM model is required. An accurate and numerically efficient model for the transient and DC characteristics of Fowler Nordheim (FN) based Flash EEPROM cells has been developed. The model has been extensively validated, using read, program and erase operations. The model has also been applied to several applications, in a typical structure. These display the ability of the model to accelerate the design cycle for applications which require flash memory.

关键词： EPROM Nonvolatile memory Flash memory Electrons Semiconductor device modeling Circuit simulation Acceleration CMOS process Costs Threshold voltage

来源：评论

学校读者我要写书评

暂无评论

An integrated plasma equipment-feature scale model for ionized metal physical vapor deposition

An integrated plasma equipment-feature scale model for ioniz...

引用

IEEE International conference on Plasma Science (ICOPS)

作者： Junqing Lu M.J. Kushner Dept. of Mech. & Ind. Eng. Illinois Univ. Urbana IL USA Department of Electrical and Computer Engineering University of Illinois Urbana IL USA

Summary form only given. Ionized metal physical vapor deposition (IMPVD) is used to deposit diffusion barriers and metal seed layers into high aspect ratio trenches for interconnect wiring in the fabrication of microelectronics devices. To decrease the RC time delay of signals, Cu interconnects are replacing Al whose resistance is almost twice that of Cu. To improve the design of IMPVD systems, it is useful to have a comprehensive simulator. To address this need, an integrated plasma equipment-feature model has been developed, and applied to the investigation of Cu IMPVD. The computational tools use in this study are the two-dimensional Hybrid Plasma Equipment Model (HPEM), the Plasma Chemistry Monte Carlo simulation (PCMCS) and the Monte Carlo feature profile model (MCFPIM). The HPEM produces species densities and source functions in the bulk plasma. The PCMCS computes the trajectories of ions and neutral species which are incident onto features based on the species densities and sources from the HPEM. The MCFPM uses these fluxes to simulate the deposition profile in a trench. The MCFPM, originally written for etching, was extended to deposition by adding surface diffusion algorithms. These algorithms use Monte Carlo techniques to move adsorbed pseudoparticles on the surface employing probabilities based on the local inter-particle potentials.

关键词： Plasma applications Plasma chemistry Plasma density Plasma simulation Plasma sources Plasma devices Computational modeling Monte Carlo methods Chemical vapor deposition Wiring

来源：评论

学校读者我要写书评

暂无评论

design and simulation of a micromirror array for a projection TV

Design and simulation of a micromirror array for a projectio...

引用

conference on design, Characterization, and Packaging for MEMS and microelectronics

作者： Choi, B Lee, J Jung, K Shin, H Sogang Univ Dept Engn Mech Mapo Gu Seoul 121742 South Korea

ISBN: (纸本)0819434949

The design of a micromirror for a projection TV is investigated. A static structural analysis is performed to give an optimal shape of the micromirror using the FEM(finite-element method) commercial package, ANSYS. A solid modeling is created, and mapped meshes are applied to it in order to satisfy a symmetric condition. A stress analysis shows that, maximum stress does not exceed an allowable stress, which is the yield strength. A modal analysis is also executed to find the approximate natural frequencies with different design parameters. The result can be utilized to see which design parameter is strongly dominant. The micromirror was fabricated by Samsung Electronics. Dynamic deflection experiments confirm the results of the simulation.

关键词： projection TV micromirror FEM structural analysis modal analysis

来源：评论

学校读者我要写书评

暂无评论

Efficient ANN-based interconnect delay and crosstalk modeling

Efficient ANN-based interconnect delay and crosstalk modelin...

引用

22nd International conference on microelectronics (MIEL 2000)

作者： Ilumoka, A. Univ of Hartford Hartford CT United States

ISBN: (纸本)0780352351

The dominance of system performance by interconnect delay in deep-submicron design presents many challenges to physical design tool developers. This paper presents an efficient ANN-based technique for modeling interconnect crosstalk in integrated circuits. ANN models for user-defined interconnect primitives called wirecells are trained and tested using a database created using a suitable simulation package. For fixed wirecell length and geometry, inputs to the ANN include signal frequency, input voltage amplitude, near and far end termination impedances. Outputs derived from the ANN include crosstalk voltage peak and RMS values and spectral composition. Experimental results demonstrate the ability of this approach to successfully predict coupled noise in modest cpu times compared with existing approaches.

关键词： Integrated circuit layout

来源：评论

学校读者我要写书评

暂无评论

Reactor and process modeling in optoelectronics device fabrication

Reactor and process modeling in optoelectronics device fabri...

引用

conference on Physics and simulation of Optoelectronic Devices VII

作者： Meyyappan, M Bose, D NASA Ames Res Ctr Moffett Field CA 94035 USA

ISBN: (纸本)0819430951

Computational modeling of reactors and processes has gained wide acceptance in the microelectronics industry. Commercial software are readily available and routinely used at the design stage to reduce design cycle and cost of development. The optoelectronics community can benefit from these advances since many of the processing steps are common, though material chemistries, device configuration and wafer size are different. This paper provides an overview of reactor and process models and specific applications to nitride MOCVD, hydride vapor epitaxy of GaN, SiC CVD and etching of m-V compounds using chlorine chemistry.

关键词： reactor model deposition etching computer simulation nitride growth chlorine plasma chemistry virtual reactor

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共142页 << < 123 124 125 126 127 128 129 130 131 132 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：