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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"

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Integrated design process with MESA/MERLAN

Integrated design process with MESA/MERLAN

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IEEE International Symposium on Computer Aided Control System design (CACSD)

作者： Y. Tanurhan S. Schmerler K.D. Muller-Glaser Department of Electronic Systems and Microsystems F Z I Computer Science Research Center Karlsruhe Karlsruhe Germany

In this paper, a methodology for the design of microelectronic systems which include hardware and software for open-loop and closed-loop control will be presented. An integrated approach to specification and design, analysis and simulation of the overall system has been developed. This provides for a systematic, computer aided approach to requirements definition, specification and design as well as verification and validation of the results. As embedded systems often require real-time capabilities, the environment presented gives special consideration to these constraints. For verification purpose of the developed design and specification methodology a software prototype has been implemented and used in concrete example applications, which is also presented in this paper.

关键词： Process design design methodology microelectronics Hardware Open loop systems Control systems Computational modeling Analytical models Embedded system Real time systems

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BiMOS modeling for reliable SOI circuit design

BiMOS modeling for reliable SOI circuit design

引用

IEEE SOI-3D-Subthreshold microelectronics Technology Unified conference (S3S)

作者： S. Krishnan J.G. Fossum M.M. Pelella University of Florida Gainesville FL USA IBM Corporation Hopewell Junction NY USA

Summary form only given. Recent work has clearly revealed that transient current in the parasitic bipolar junction transistor (BJT) of the floating-body SOI MOSFET can be significant and degrading even in SOI circuits operating at voltages well below the BJT-defined drain-source breakdown. The BJT is also critically important with regard to soft errors in low-voltage SOI memory circuits. In these cases, the BJT current is driven by dynamic charging of the body and concomitant forward biasing of the source (or drain) junction, supported by capacitive, or charge coupling between the BJT and the MOSFET. A reliable circuit model for the floating-body SOI MOSFET must therefore account for the coupled BJT. In this paper we present a new, quasi-2D parasitic BJT model physically coupled to the SOISPICE MOSFET models and defined in terms of their parameters. We further use physical insight derived from this BiMOS modeling to identify a new means of controlling the transient BJT, or leakage current in SOI MOSFETs which could be exploited in design.

关键词： Circuit synthesis Silicon germanium Germanium silicon alloys Parasitic capacitance MOSFETs Medical simulation Radiative recombination Leakage current Random access memory Circuit simulation

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Combined control flow dominated and data flow dominated high-level synthesis

Combined control flow dominated and data flow dominated high...

引用

design Automation conference

作者： E. Berrebi P. Kission S. Vernalde S. De Troch J.C. Berluison J. Frehel A.A. Jerraya I. Bolsens Av. Félix Viallet TIMA 46 Grenoble France SGS-Thomson Microelectronics Inc. France IMEC Leuven Belgium

This paper presents the design of a Videophone Coder-Decoder Motion Estimator using two High-Level Synthesis tools. Indeed, the combination of a Control Flow Dominated part (complex communication protocol) with a Data Flow Dominated part (high throughput computations) makes this circuit difficult to be synthesized by a single HLS tool. The combination of two HLS tools for the high-level design of this operator required the definition of a sophisticated design flow allowing mixed-level and multi-language simulations. When compared to design starting from RTL specifications, HLS induces only a negligible area overhead of 5%, and provides gain in description length (divided by 5), design time and flexibility.

关键词： High level synthesis Communication system control Codecs Motion estimation Protocols Throughput Data flow computing Circuit synthesis Computational modeling Circuit simulation

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Non-quasi-static SOI MOSFET model dedicated for analog circuit design

Non-quasi-static SOI MOSFET model dedicated for analog circu...

引用

IEEE SOI-3D-Subthreshold microelectronics Technology Unified conference (S3S)

作者： E. Robilliart E. Dubois IEMNIISEN UMR CNRS D'Ascq France

A one-dimensional CAD-oriented SOI MOSFET model continuous over all regions of operation is described. This model is valid for long and short channel fully depleted devices. In addition, the NQS nature of the charge redistribution is implicitly accounted for, without using any empirical partition of the channel charge. The physical and numerical foundation of our model is first described. In a second part, we propose a quantitative comparison between our modeling approach and two-dimensional device simulation. A circuit application is given in a third part. Finally, current memory cells (a circuit particularly sensible to charge injection) are simulated with this new model.

关键词： MOSFET circuits Analog circuits Circuit simulation Voltage Strips Capacitance Poisson equations Dielectrics Scalability Silicon on insulator technology

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Simultaneous switching noise projection for high-performance SOI chip design

Simultaneous switching noise projection for high-performance...

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IEEE SOI-3D-Subthreshold microelectronics Technology Unified conference (S3S)

作者： I.K. Wang H.H. Chen IBM Reasearch Division IBM Thomas J. Watson Research Center Yorktown Heights NY USA

This paper describes the circuit modeling techniques to predict on-chip simultaneous switching noise for high performance SOI circuits. The analysis includes both the inductive /spl Delta/I noise on the package level and the resistive I R drop on the chip level. By identifying the hot spots on the chip and /spl Delta/V across the chip, designers can optimize the placement of on-chip decoupling capacitors and effectively minimize the switching noise for SOI chips.

关键词： Chip scale packaging Circuit noise Silicon on insulator technology Switching circuits CMOS technology Capacitance Power supplies Delay estimation Circuit simulation Voltage

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Optimization of custom MOS circuits by transistor sizing

Optimization of custom MOS circuits by transistor sizing

引用

IEEE International conference on Computer-Aided design

作者： A.R. Conn P.K. Coulman R.A. Haring G.L. Morrill C. Visweswariah IBM Microelectronics Division IBM Thomas J. Watson Research Center USA

Optimization of a circuit by transistor sizing is often a slow, tedious and iterative manual process which relies on designer intuition. Circuit simulation is carried out in the inner loop of this tuning procedure. Automating the transistor sizing process is an important step towards being able to rapidly design high-performance, custom circuits. JiffyTune is a new circuit optimization tool that automates the tuning task. Delay, rise/fall time, area and power targets are accommodated. Each (weighted) target can be either a constraint or an objective function. Minimax optimization is supported. Transistors can be ratioed and similar structures grouped to ensure regular layouts. Bounds on transistor widths are supported. JiffyTune uses LANCELOT, a large-scale nonlinear optimization package with an augmented Lagrangian formulation. Simple bounds are handled explicitly and trust region methods are applied to minimize a composite objective function. In the inner loop of the optimization, the fast circuit simulator SPECS is used to evaluate the circuit. SPECS is unique in its ability to efficiently provide time-domain sensitivities, thereby enabling gradient-based optimization. Both the adjoint and direct methods of sensitivity computation have been implemented in SPECS. To assist the user, interfaces in the Cadence and SLED design systems have been constructed.

关键词： MOSFETs Circuit optimization Circuit simulation design optimization Delay effects Minimax techniques Large-scale systems Packaging Lagrangian functions Computational modeling

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Fabrication and characterization of a 83 MHz high temperature /spl beta/-SiC MESFET operational amplifier with an AlN isolation layer on

Fabrication and characterization of a 83 MHz high temperatur...

引用

Device Research conference

作者： K.K. Diogu G.L. Harris A. Mahajan I. Adesida D.F. Moeller R.A. Bertram Materials Science Research Center of Excellence School of Engineering Howard University College of Medicine Washington D.C. DC USA Center for Compound Semiconductor Microelectronics University of Illinois Urbana IL USA MOS Digita-Analog Integrated Circuits Division Motorola Inc. Austin TX USA

Summary form only given. The fabrication of a high temperature analog integrated operational amplifier implemented in /spl beta/-SiC technology using depletion-only MESFETs is presented. The operational amplifier is implemented with 1 /spl mu/m gate geometries using direct write e-beam lithography to achieve high frequency operation. For the first time, compound MESFETs have been used as current sources and sinks at the various stages of the operational amplifier to provide high output impedance and hence increased circuit gain, while maintaining a reasonable unity gain frequency. Circuit design/simulation methods, circuit layout, device modeling, device parameter extraction methods and operational amplifier circuit fabrication techniques used to achieve excellent operational amplifier characteristics will be discussed in detail.

关键词： Fabrication Temperature Operational amplifiers MESFETs Frequency Geometry Lithography Impedance Circuit synthesis Circuit simulation

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Proceedings of the 1995 IEEE Region 10 International conference on microelectronics and VLSI, TENCON'95

Proceedings of the 1995 IEEE Region 10 International Confere...

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Proceedings of the 1995 IEEE Region 10 International conference on microelectronics and VLSI, TENCON'95

The proceedings contains 129 papers. Topics discussed include CMOS technology, microsystems, shear stress sensors, physics and technology of thin film devices, optical effects in compound semiconductors, optoelectronic devices, analog circuit design, computer aided design, mathematical modeling and simulation, reliability and characterization of CMOS devices, digital circuit design and technologies, solid state devices, power devices and integrated circuits, video circuits, and microprocessors.

关键词： Semiconductor devices

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Deep-submicron MOSFET modeling for circuit simulation

Deep-submicron MOSFET modeling for circuit simulation

引用

Proceedings of the 1995 IEEE Region 10 International conference on microelectronics and VLSI, TENCON'95

作者： Jeng, Min-Chie Liu, Zhihong Cheng, Yuhua Cadence Design Systems San Jose United States

With the decreasing device dimensions, faster switching speed, tighter design margin, and larger circuit sizes, deep-submicron MOSFET modeling has become more challenging and difficult to develop than ever. This paper describes recent activities and trend in MOSFET modeling. Both the DC and AC aspects of MOSFET models are covered. Due to the more stringent requirements, test procedures for both analog and digital applications have been proposed. Existing SPICE models are evaluated against these tests. In particular, BSIM3 and MOS9, the two mostly discussed candidates for the standard deep-submicron MOSFET model, are compared.

关键词： Semiconductor device models

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Proceedings of the NORTHCON'94 conference

Proceedings of the NORTHCON'94 Conference

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Proceedings of the NORTHCON'94 conference

The proceedings contains 73 papers. Topics discussed include intelligent data communications, international standard for quality, modeling and power electronics, logic support analysis, analog and digital interdomain concerns in integrated circuits, object oriented paradigm, reengineering, simulation for design. VLSI design with VHDL and synthesis, applied decision analysis, electrifying Puget sound transportation, high speed analog integrated circuits, system engineering, electric vehicles and software piracy.

关键词： microelectronics

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