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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"
1418 条 记 录,以下是1331-1340 订阅
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Integrated design process with MESA/MERLAN
Integrated design process with MESA/MERLAN
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IEEE International Symposium on Computer Aided Control System design (CACSD)
作者: Y. Tanurhan S. Schmerler K.D. Muller-Glaser Department of Electronic Systems and Microsystems F Z I Computer Science Research Center Karlsruhe Karlsruhe Germany
In this paper, a methodology for the design of microelectronic systems which include hardware and software for open-loop and closed-loop control will be presented. An integrated approach to specification and design, a... 详细信息
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BiMOS modeling for reliable SOI circuit design
BiMOS modeling for reliable SOI circuit design
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IEEE SOI-3D-Subthreshold microelectronics Technology Unified conference (S3S)
作者: S. Krishnan J.G. Fossum M.M. Pelella University of Florida Gainesville FL USA IBM Corporation Hopewell Junction NY USA
Summary form only given. Recent work has clearly revealed that transient current in the parasitic bipolar junction transistor (BJT) of the floating-body SOI MOSFET can be significant and degrading even in SOI circuits... 详细信息
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Combined control flow dominated and data flow dominated high-level synthesis
Combined control flow dominated and data flow dominated high...
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design Automation conference
作者: E. Berrebi P. Kission S. Vernalde S. De Troch J.C. Berluison J. Frehel A.A. Jerraya I. Bolsens Av. Félix Viallet TIMA 46 Grenoble France SGS-Thomson Microelectronics Inc. France IMEC Leuven Belgium
This paper presents the design of a Videophone Coder-Decoder Motion Estimator using two High-Level Synthesis tools. Indeed, the combination of a Control Flow Dominated part (complex communication protocol) with a Data... 详细信息
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Non-quasi-static SOI MOSFET model dedicated for analog circuit design
Non-quasi-static SOI MOSFET model dedicated for analog circu...
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IEEE SOI-3D-Subthreshold microelectronics Technology Unified conference (S3S)
作者: E. Robilliart E. Dubois IEMNIISEN UMR CNRS D'Ascq France
A one-dimensional CAD-oriented SOI MOSFET model continuous over all regions of operation is described. This model is valid for long and short channel fully depleted devices. In addition, the NQS nature of the charge r... 详细信息
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Simultaneous switching noise projection for high-performance SOI chip design
Simultaneous switching noise projection for high-performance...
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IEEE SOI-3D-Subthreshold microelectronics Technology Unified conference (S3S)
作者: I.K. Wang H.H. Chen IBM Reasearch Division IBM Thomas J. Watson Research Center Yorktown Heights NY USA
This paper describes the circuit modeling techniques to predict on-chip simultaneous switching noise for high performance SOI circuits. The analysis includes both the inductive /spl Delta/I noise on the package level ... 详细信息
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Optimization of custom MOS circuits by transistor sizing
Optimization of custom MOS circuits by transistor sizing
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IEEE International conference on Computer-Aided design
作者: A.R. Conn P.K. Coulman R.A. Haring G.L. Morrill C. Visweswariah IBM Microelectronics Division IBM Thomas J. Watson Research Center USA
Optimization of a circuit by transistor sizing is often a slow, tedious and iterative manual process which relies on designer intuition. Circuit simulation is carried out in the inner loop of this tuning procedure. Au... 详细信息
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Fabrication and characterization of a 83 MHz high temperature /spl beta/-SiC MESFET operational amplifier with an AlN isolation layer on
Fabrication and characterization of a 83 MHz high temperatur...
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Device Research conference
作者: K.K. Diogu G.L. Harris A. Mahajan I. Adesida D.F. Moeller R.A. Bertram Materials Science Research Center of Excellence School of Engineering Howard University College of Medicine Washington D.C. DC USA Center for Compound Semiconductor Microelectronics University of Illinois Urbana IL USA MOS Digita-Analog Integrated Circuits Division Motorola Inc. Austin TX USA
Summary form only given. The fabrication of a high temperature analog integrated operational amplifier implemented in /spl beta/-SiC technology using depletion-only MESFETs is presented. The operational amplifier is i... 详细信息
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Proceedings of the 1995 IEEE Region 10 International conference on microelectronics and VLSI, TENCON'95
Proceedings of the 1995 IEEE Region 10 International Confere...
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Proceedings of the 1995 IEEE Region 10 International conference on microelectronics and VLSI, TENCON'95
The proceedings contains 129 papers. Topics discussed include CMOS technology, microsystems, shear stress sensors, physics and technology of thin film devices, optical effects in compound semiconductors, optoelectroni... 详细信息
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Deep-submicron MOSFET modeling for circuit simulation
Deep-submicron MOSFET modeling for circuit simulation
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Proceedings of the 1995 IEEE Region 10 International conference on microelectronics and VLSI, TENCON'95
作者: Jeng, Min-Chie Liu, Zhihong Cheng, Yuhua Cadence Design Systems San Jose United States
With the decreasing device dimensions, faster switching speed, tighter design margin, and larger circuit sizes, deep-submicron MOSFET modeling has become more challenging and difficult to develop than ever. This paper... 详细信息
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Proceedings of the NORTHCON'94 conference
Proceedings of the NORTHCON'94 Conference
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Proceedings of the NORTHCON'94 conference
The proceedings contains 73 papers. Topics discussed include intelligent data communications, international standard for quality, modeling and power electronics, logic support analysis, analog and digital interdomain ... 详细信息
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