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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"
1418 条 记 录,以下是1361-1370 订阅
排序:
A Novel CMOS Current Reference with Low Temperature and Supply Dependence
A Novel CMOS Current Reference with Low Temperature and Supp...
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2006 International conference on Communications,Circuits and Systems(第四届国际通信、电路与系统学术会议)
作者: Yuan Liu Guo-qing Liu Bo He Long Fan Ning Ning Qi Yu Mo-hua Yang School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China Chengdu Sichuan China
A new CMOS current reference solution is presented, by creating a new negative temperature coefficient (TC) current resulted from negative-TC voltage which is generated in the bandgap circuit whose zero-TC (ZTC) point... 详细信息
来源: 评论
Performance of an air-cooled heat sink with microscale dimples under transitional flow conditions
Performance of an air-cooled heat sink with microscale dimpl...
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Intersociety conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITHERM)
作者: Krishna Kota Ludovic Burton Yogendra Joshi Microelectronics and Emerging Technologies Thermal Laboratory The George W. Woodruff School of Mechanical Engineering Georgia Institute of Technology Atlanta GA USA
The objective of this effort is to pursue artificial microscale surface roughness features in the form of dimples, on the fins of an air cooled heat sink, as a passive option to energy-efficiently augment heat transfe... 详细信息
来源: 评论
simulation of capacitive type bimorph humidity sensors
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Journal of Physics: conference Series 2005年 第1期10卷 305-308页
作者: Fragakis, J. Chatzandroulis, S. Papadimitriou, D. Tsamis, C. National Technical University of Athens Department of Physics GR-15780 Athens Greece Institute of Microelectronics NCSR Demokritos 15310 Aghia Paraskevi PO Box 60228 Greece
FEM modeling of recently developed silicon/polymer bimorph micro-cantilever structures, applied as capacitive type humidity sensors, is presented. In these structures, the expansion of the overlying polymer in the pre...
来源: 评论
Thermal design of heat spreader and analysis of thermal interface materials (TIM) for multi-chip package
Thermal design of heat spreader and analysis of thermal inte...
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Electronic Components and Technology conference (ECTC)
作者: D. Pinjala N. Khan Xie Ling Poi-Siong Teo E.H. Wong M.K. Iyer C. Lee I.J. Rasiah Institute of Microelectronics Greece Infineon Technologies Asia Pacific Private Limited Corporation Singapore Honeywell (S) Private Limited USA
Industry demand for high power multi-chip packages is increasing to realize multifunctional compact systems. In line with industry requirements a multi-chip package suitable for high performance devices is developed. ... 详细信息
来源: 评论
The study of thermo-mechanical reliability for multi-layer stacked chip module with through-silicon-via (TSV)
The study of thermo-mechanical reliability for multi-layer s...
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Electronics Packaging Technology conference (EPTC)
作者: F.X. Che Xiaowu Zhang Navas Khan K.H. Teo S. Gao D Pinjala Institute of Microelectronics Agency for Science Technology and Research Singapore Singapore
Through-silicon-via (TSV) technology permits devices to be placed and wired in the third dimension. Currently, there is a strong motivation for the semiconductor industry to move to 3-D integration using the TSV appro... 详细信息
来源: 评论
simulation study of carbon nanotubes field emission display with triode structure
Simulation study of carbon nanotubes field emission display ...
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IEEE International conference on Vacuum microelectronics (IVMC)
作者: Chun-Tao Lee Yung-Chiang Lan Yuan Hu Cheng-Chung Lee Bing-Yue Tsui Tsang-Lang Lin Electronics Research and Service Organization Industrial Technology and Research Institute Hsinchu Taiwan National Center of High-performance Computing Hsinchu Taiwan Department of Engineering and System Science National Tsing Hua University Hinchu Taiwan Department of Electronics Engineering National Chiao Tung University Hinchu Taiwan
Owing to the high aspect ratios and small radii of curvature, carbon nanotubes (CNTs) exhibit excellent field emission characteristics, which is very advantageous for the field emission display (FED) applications. In ... 详细信息
来源: 评论
Thermal design and Characterization of High Power SiC Inverter with Low Profile and Enhanced Thermal Performance
Thermal Design and Characterization of High Power SiC Invert...
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IEEE Electronic Components and Technology conference
作者: Gongyue Tang Tai Chong Chai Xiaowu Zhang A*STAR (Agency for Science Technology and Research) Institute of Microelectronics Singapore
A single phase high power package is designed and developed in this study. The developed power package achieves significant thermal performance improvement as compared with the conventional wire-bonded power package. ... 详细信息
来源: 评论
Board Level Solder Joint Reliability design and Analysis of FOWLP
Board Level Solder Joint Reliability Design and Analysis of ...
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Electronics Packaging Technology conference (EPTC)
作者: Xiaowu Zhang Boon Long Lau Haoran Chen Yong Han Ming Chinq Jong Sharon Pei Siang Lim Simon Siak Boon Lim Xiaobai Wang Yosephine Andriani Songlin Liu Institute of Microelectronics (IME) A*STAR (Agency for Science Technology and Research) Singapore Institute of Materials Research and Engineering (IMRE) A*STAR (Agency for Science Technology and Research) Singapore
This paper presents a comprehensive board level solder joint reliability study under thermal cycling (TC) loading by both numerical simulation and experimental test. TC profile is from -40°C to 125°C. In num... 详细信息
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Avalanche Ruggedness Evaluation on Planar and Trench SiC MOSFETs: An Experimental and TCAD simulation Study
Avalanche Ruggedness Evaluation on Planar and Trench SiC MOS...
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International conference on (ICEPT) Electronic Packaging Technology
作者: Tao Luo Runding Luo Zaiman Xiang Jianjun Zhuang Guoqi Zhang Jiajie Fan Academy for Engineering & Technology Fudan University Shanghai China Changzhou Galaxy Century Microelectronics Co. Ltd. Changzhou China EEMCS Faculty Delft University of Technology Delft the Netherlands Research Institute of Fudan University in Ningbo Ningbo China
In the domain of power electronics, especially for applications requiring high power, high temperature, and high frequency, Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors (SiC MOSFETs) stand out du... 详细信息
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Multiple transient effects in SOI transistors: Systematic measurements and simulation
Multiple transient effects in SOI transistors: Systematic me...
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IEEE SOI-3D-Subthreshold microelectronics Technology Unified conference (S3S)
作者: D. Weiser D. Munteanu S. Cristoloveanu O. Faynot J.L. Pelloie J. Fossum Department of Electrical Engineering University of Florida Gainesville FL USA LPCS (UMR CNRS 5531) ENSERG Grenoble France LETI-CEA Grenoble Grenoble France
The use of partially depleted SOI CMOS technology in mainstream ULSI can be limited by transient floating body effects, that make circuit design problematic. Time-dependent V/sub T/ is observed in circuits, leading to... 详细信息
来源: 评论