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IEEE Asia Pacific conference on Postgraduate Research in microelectronics and Electronics (PrimeAsia)

作者： Suryanarayana, K. Nagaraja, H. N. NMAM Inst Technol Dept Elect & Elect Nitte 574110 India Noble Grp Inst Junagadh 362310 Gujarat India

ISBN: (纸本)9781509001361

Mathematical modeling and analysis of converters is an essential and critical phase in the design stage of the system. High current switching and inductor ripple causes electromagnetic interference in the system. Paralleling of the converters and smart switching control will reduce the stress on the converter switches. Substantial ripple reduction in the source and load current can be achieved by optimally choosing the transfer ratio. Multiphase technique increases the ripple frequency resulting in lesser filter requirements. A two phase bidirectional converter operating in continuous current conduction mode is modeled and digital average current mode control technique is proposed to regulate the output voltage. A 700 watt system is designed and the simulation and experimental results are presented.

关键词： multiphase converter mathematical modeling average current mode control frequency response feedback system

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design and modeling of on-chip electrostatic discharge (ESD) protection structures

Design and modeling of on-chip electrostatic discharge (ESD)...

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Proceedings - 2004 24th International conference on microelectronics, MIEL 2004

作者： Liou, Juin J. Gao, Xiaofang Department of Electrical Engineering University of Central Florida Orlando FL 32816 United States Modeling and Simulation Group Intel Corp. 9750 Goethe Rd. Sacramento CA 95827 United States

Electrostatic discharge (ESD) is a critical reliability concern for microchips. This paper presents a computer-aided design tool for ESD protection design and applications. Specifically, we develop an improved and robust MOS model and implement such a model into the industry standard Cadence SPICE for ESD circuit simulation. Experimental data measured from the transmission line pulsing (TLP) technique and human body model (HBM) tester are included in support of the model.

关键词： Electrostatics

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Impact of voltage scaling on STT-MRAMs through a variability-aware simulation framework 14

Impact of voltage scaling on STT-MRAMs through a variability...

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13th conference on Ph.D. Research in microelectronics and Electronics (PRIME) / 14th International conference on Synthesis, modeling, Analysis and simulation Methods and Application to Circuit design (SMACD)

作者： De Rose, Raffaele Carangelo, Greta Lanuzza, Marco Crupi, Felice Finocchio, Giovanni Carpentieri, Mario Univ Calabria DIMES I-87036 Arcavacata Di Rende Italy Univ Messina MIFT Dept I-98166 Messina Italy Politecn Bari DEI I-70125 Bari Italy

ISBN: (纸本)9781509050529

In this paper, we focus on the study of the impact of voltage scaling on writing performance and energy of STT-MRAM arrays featuring four different configurations of bitcell. The memory arrays are implemented by a circular MTJ with a diameter of 30 nm and a 28-nm UTBB FDSOI CMOS technology. The analysis is performed by considering the effect of both CMOS and MTJ process variations, and the stochastic variations of the MTJ switching time. The MTJ behavior is integrated into a commercial circuit design tool in the form of a Verilog-A LUT-based code, which exploits as inputs the outcomes of micromagnetic multi-domain simulations to ensure more accurate modeling of the MTJ characteristics. simulation results show that the write performance and energy of STT-MRAMs strongly depend on the bitcell configuration. The energy saving achieved through voltage scaling is found to be up to 37% at the cost of a delay penalty of 3.3x, as compared to the write operation at the nominal voltage of 1 V.

关键词： Magnetic tunnel junction (MTJ) STT-MRAM modeling variability voltage scaling

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A SThM probe optimization and its time-space multi-scale modeling

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MECHATRONICS 2016年 40卷 251-263页

作者： Lenczner, Michel Yang, Bin Bontempi, Alexia Teyssieux, Damien Cogan, Scott Janus, Pawel Koehler, Bernd Ratier, Nicolas Univ Bourgogne Franche Comte Inst FEMTO ST TF 26 Chemin Epitaphe F-25030 Besancon France Univ Bourgogne Franche Comte Inst FEMTO ST MN2S 15 B Ave Montboucons F-25030 Besancon France Univ Bourgogne Franche Comte Inst FEMTO ST DMA 26 Chemin Epitaphe F-25030 Besancon France Inst Technol Elektronowej Al Lotnikow 32-46 PL-02669 Warsaw Poland Fraunhofer IKTS Maria Reiche Str 2 D-01109 Dresden Germany Zhengzhou Univ Light Ind 5 Dongfeng Rd Zhengzhou 450002 Henan Province Peoples R China

We present two aspects of modeling and design of a Scanning Thermal Microscopy (SThM) probe built by microfabrication techniques. An optimized design based on a full parametrization of its geometry is calculated using a multi-criteria optimization technique after a drastic selection of the most sensitive geometrical parameters. The optimization is carried out in the static regime. We also report a new time space multi-scale model of the probe operating in active mode and heated with a combination of DC and modulated harmonic current sources, a case where the simulation takes too long to be used in a regular design process. The model derivation is based on an asymptotic methods related to high frequency periodic source. Precisely, the model distinguishes between two time scales and two space scales related to the low and high frequency phenomena. simulation results show the potential of the model in terms of accuracy and computation speed and are compared to experimental results. (C) 2016 Elsevier Ltd. All rights reserved.

关键词： Scanning Thermal Microscopy Probe shape optimization Multi-scale modeling

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Statistical characterization and modeling of random telegraph noise effects in 65nm SRAMs cells 14

Statistical characterization and modeling of random telegrap...

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作者： Martin-Martinez, J. Rodriguez, R. Nafria, M. Torrens, G. Bota, S. A. Segura, J. Moll, F. Rubio, A. UAB REDEC Grp Elect Engn Dept Barcelona Spain UIB Elect Syst Grp GSE Palma De Mallorca Spain Univ Politecn Cataluna Dept Elect Engn Barcelona Spain

ISBN: (纸本)9781509050529

Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is derived by applying statistical and physics based Montecarlo modeling to the experimental data. Results show that RTN can have a significant impact on the memory write operations and should therefore be taken into account during the memory design phase.

关键词： Random Telegraph Noise SRAM variability characterization modeling

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Lithography Hotspots Detection Using Deep Learning 15

Lithography Hotspots Detection Using Deep Learning

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15th International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 14th conference on PhD Research in microelectronics and Electronics (PRIME)

作者： Borisov, Vadim Scheible, Juergen Reutlingen Univ Robert Bosch Ctr Power Elect Reutlingen Germany

ISBN: (纸本)9781538651537

The hotspot detection has received much attention in the recent years due to a substantial mismatch between lithography wavelength and semiconductor technology feature size. This mismatch causes diffraction when transferring the layout from design onto a silicon wafer. As a result, open or short circuits (i.e. lithography hotspots) are more likely to be produced. Additionally, increasing numbers of semiconductors devices on a wafer required more time for the lithography hotspot detection analysis. In this work, we propose a fast and accurate solution based on novel artificial neural network (ANN) architecture for precise lithography hotspot detection using a convolution neural network (CNN) adopting a state-of-the-art technique. The experimental results showed that the proposed model gained accuracy improvement over current state-of-the-art approaches. The final code has been made publicly available.

关键词： Lithography Convolution Training Kernel Solid modeling Feature extraction Neurons"

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Automated Parameter Extraction and SPICE Model Modification For Gate Enclosed MOSFETs simulation 16

Automated Parameter Extraction and SPICE Model Modification ...

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16th International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 15th conference on PhD Research in microelectronics and Electronics (PRIME)

作者： Contreras, Boris Ducoudray, Gladys Palomera, Rogelio Bernal, Carlos Univ Puerto Rico Dept Elect & Comp Engn Mayaguez PR 00681 USA

ISBN: (纸本)9781728112015

This work focuses in using experimental measurements to extract the aspect ratio (W/L) for Gate-Enclosed or Annular MOSFETs. All measurements and calculations are performed with an automated virtual instrumentation (VI) environment developed in LabVIEW. The VI was capable of extracting threshold voltage and low field mobility, needed for W/L calculation. An extraction procedure for the body effect factor is also presented. For validation purposes, extracted parameters were compared with those provided by the foundry (MOSIS) using traditional rectangular transistors. The extracted W/L was validated by comparing to Giraldo's experimental method. The SPICE BSIM 3 model parameters provided by the foundry is then modified using the extracted parameters including the aspect ratio. With this modification better simulation results were obtained. They were compared to the experimental measurements for an annular MOSFET drain voltage vs drain current characteristic curves at different gate voltages, showing an improvement of 58% when compared to the original non modified SPICE model parameters.

关键词： SPICE

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Electrical modeling and simulation for mixed-signal interconnect and packaging

Electrical modeling and simulation for mixed-signal intercon...

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Proceedings of the 1997 2nd Annual IEEE International conference on Innovative Systems in Silicon

作者： Cangellaris, Andreas C. Univ of Illinois at Urbana-Champaign Urbana United States

The explosive growth of wireless communications, combined with the rapid advances in high-performance portable computing, are driving the microelectronics industry toward the development of a variety of multi-functional, low-cost, compact, mixed-signal electronic products. These new products call for novel, often revolutionary, practices in functional block integration and packaging. Some of the challenges associated with the electrical design and rapid prototyping of these systems are discussed in this paper. Examples are given of existing electromagnetic modeling methodologies and associated CAD tools that can be used today to facilitate the design of these novel packages. The paper concludes with a brief discussion of on-going research activities toward the enhancement of these modeling/simulation methodologies and the eventual establishment of an electromagnetic CAD environment for mixed-signal system electrical design.

关键词： microelectronics

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Behavioral modeling of a Sensor Interface Circuit Including Various Non-Idealities 14

Behavioral Modeling of a Sensor Interface Circuit Including ...

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作者： Heinssen, Sascha Taddiken, Maike Hillebrand, Theodor Paul, Steffen Peters-Drolshagen, Dagmar Univ Bremen Inst Electrodynam & Microelect ITEM Me Bremen Germany

ISBN: (纸本)9781509050529

In modern CMOS processes, several non-ideal influences affect the functionality of integrated circuits. In order to analyze and reduce these influences, time intensive circuit simulations are performed at transistor level. Although numerous non-idealities are considered in such simulations, they cannot be analyzed separately since they are inherent parts of the transistor models and cannot be faded out. In this work, a solution to this problem is presented: the use of Verilog-A/MS behavioral models in combination with Response Surface modeling. Since error sources can easily be switched on and off in these models, their influence on circuit parameters can be examined individually. Moreover, the required simulation time is drastically reduced by using these models. A 65nm CMOS sensor interface is selected to demonstrate the advantages of the introduced approach. The interface is transferred from transistor to behavioral level before both circuit representations are compared in various simulations.

关键词： sensor interface behavioral modeling response surface modeling Verilog-A/MS fault analysis

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simulation of Broadband Transient Signals in Frequency-Domain using Impedance Parameters 14

Simulation of Broadband Transient Signals in Frequency-Domai...

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作者： Protze, Florian Ihle, David Kreissig, Martin Joerges, Udo Ellinger, Frank Tech Univ Dresden Chair Circit Design & Network Theory D-01062 Dresden Germany

ISBN: (纸本)9781509050529

In order to design and simulate broadband communication systems like Ethernet, accurate models up to 375MHz and efficient simulations are necessary. This paper provides an approach to model analog two-port systems using impedance parameters purely in the digital domain. The twisted-pair copper line is modelled based on frequency dependent impedance parameters gained from FEM (finite element method) field solver software. The necessary steps to use the impedance parameters for frequency-domain (FD) simulation of transient signals are given. A way to simulate very long input signals using the overlap-add method is shown. Two examples for simulating broadband transient signals using this approach show the utility.

关键词： Impedance Finite element analysis Transient analysis Frequency-domain analysis Broadband communication Numerical models Convolution

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