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Fly's proprioception-inspired micromachined strain-sensing structure: Idea, design, modeling and simulation, and comparison with experimental results

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Journal of Physics: conference Series 2006年第1期34卷 336-341页

作者： Wicaksono, D.H.B. Zhang, L.-J. Pandraud, G. French, P.J. Vincent, J.F.V. Dept. of Microelectronics Delft Univ. of Technology Delft Zuid-Holland 2628CD Mekelweg 4 Netherlands Dept. of Mech. Engineering Bath University Bath BA2 7AY United Kingdom

A new strain-sensing structure inspired from insect's (especially the Fly) propricoception sensor is devised. The campaniform sensillum is a strain-sensing microstructure with very high sensitivity despite its small dimension (diameter ∼10 νm in a relatively stiff material of insect's exocuticle (E ∼10⁹ Pa). Previous work shows that the high sensitivity of this structure towards strain is due to its membrane-in-recess- and strainconcentrating- hole- features. Based on this inspiration, we built similar structure using silicon micromachining technology. Then a simple characterisation setup was devised. Here, we present briefly, finite-element modeling and simulation based on this actual sample preparation for the characterisation. As comparison and also to understand mechanical features responsible for the strain-sensitivity, we performed the modeling on different mechanical structures: bulk chunk, blind-hole, thorugh-hole, surface membrane, and membrane-in-recess. The actual experimental characterisation was performed previously using optical technique to membranein- recess micromachined Si structure. The FEM simulation results confirm that the bending stress and strain are concentrated in the hole-vicinity. The membrane inside the hole acts as displacement transducer. The FEM is in conformity with previous analytical results, as well as the optical characterisation result. The end goal is to build a new type MEMS strain sensor. © 2006 IOP Publishing Ltd.

关键词： Bio-inspired structure Biomimetics MEMS Strain sensing

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Sallen-Key High-Pass Filter with Unrelated Tune of Generic Parameter

Sallen-Key High-Pass Filter with Unrelated Tune of Generic P...

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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Darya Yu. Denisenko Nikolay N. Prokopenko Yuri I. Ivanov Nikolay N. Butyrlagin Department of Scientific Research Don State Technical University Rostov-on-Don Russia Department of Automatic Control Systems Don State Technical University Southern Federal University Rostov-on-Don Russia Department of Information Systems and Radio Engineering Academy of Sciences Don State Technical University Institute for Design Problems in Microelectronics of Russian Rostov-on-Don Zelenograd Russia Department of Information Systems and Radio Engineering Don State Technical University Rostov-on-Don Russia

ISBN: (数字)9781665498043

ISBN: (纸本)9781665498050

New second order high-pass filter of the Sallen-Key family circuit is considered, where there is unrelated tune of generic parameters by a digitally controlled resistor - the pole frequency, Q-factor pole and the scale transfer coefficient. The basic mathematical expressions of transfer function for proposed high-pass filter are obtained. A comparison of the parameters of the known and new schemes is given. A Sallen-Key high-pass filter circuit based on a high-frequency emitter follower has been developed. The results of high-pass filter modeling in the Micro-Cap 12 environment using the OP37 operational amplifier and an ideal buffer amplifier are presented. Computer simulation has shown that the pole frequency is adjusted by resistor R5. Adjusting the pole attenuation is possible by changing the resistor R3, while the pole attenuation frequency unchanged, an increase in R3 leads to an increase of the pole attenuation.

关键词： Resistors Q-factor Performance evaluation Temperature dependence Temperature Silicon carbide Computer simulation

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Time- and temperature-dependent thermo-mechanical modeling of a packaging molding compound and its effect on packaging process stresses

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JOURNAL OF ELECTRONIC PACKAGING 2003年第4期125卷 539-548页

作者： Ernst, LJ Zhang, GQ Jansen, KMB Bressers, HJL Delft Univ Technol Fac Design Engn & Prod NL-2628 CD Delft Netherlands Ctr Ind Technol Philips NL-5600 MD Eindhoven Netherlands Philips Semicond ATO Innovat NL-6534 AE Nijmegen Netherlands

For reliable virtual thermo-mechanical prototyping of electronic packages appropriate descriptions of the mechanical behavior of the constituent materials are essential. In many packages molding compounds are used for encapsulation and underfill to provide environmental protection and/or to improve the package thermal mechanical reliability. Therefore, among others, the availability of appropriate constitutive models for various epoxy-molding compounds is one of the requirements for computational prototyping. As there is a large variability of available molding compounds, it is essential to be able to experimentally establish the model parameters in an efficient manner. Because of the implied simplicity, linear visco-elastic models combined with the time-temperature superposition theory are mostly used in thermo-mechanical simulations. Among the various experimental possibilities to efficiently establish the model parameter functions, in the present paper the use of unidirectional creep testing is worked out for a chosen molding compound. Here isothermal one-day creep experiments at different temperatures (ranging below and above the glass transition temperature of the compound) are performed. The tensile creep compliance and the time-dependent Poisson's ratio of the material at different temperatures are successfully used to construct visco-elastic master curves. As the Poisson's ratio shows a significant change during a creep or relaxation test, its effect in partly constraint situations (as in packages) will be evident. Therefore it is not reliable to approximate this variable using a constant value. Further the visco-elastic model of the material is implemented in a finite element program and verified by means of a shear stress relaxation experiment and a creep experiment both under nonisothermal conditions. Moreover the effect of the creep behavior of the molding compound on the packaging process stress field and its evolution is investigated. Substantial cost

关键词： packaging moulding encapsulation creep testing Poisson ratio finite element analysis stress relaxation

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Heat Dissipation design for a High Density-High Power Chip Package

Heat Dissipation Design for a High Density-High Power Chip P...

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2011 12th International conference on Electronic Packaging Technology & High Density Packaging(2011 电子封装技术与高密度封装国际会议)

作者： Jing Zhou Liqiang Cao Xueping Guo Qidong Wang Daniel Guidotti Xiangmeng Jing Daquan Yu Lixi Wan Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

In this paper several heat dissipation mechanisms are studied in an effort to improve heat dissipation of a high-power packaged chip in its environment. Specifically we examine a cavity-down structure consisting of a copper plate in thermal contact with the back side of the chip. In order to evaluate the thermal performance of the cavity-down approach, three structures are compared via simulation. Heat transport occurs by conduction, radiation and convection. The first depends on material properties, thickness and temperature gradient. The second is only effective if the temperature of the radiator is much higher than that of the absorber and the two are in close proximity. Convection is most effective at high mass flow and large differential temperatures. For the problem at hand we consider, several different thicknesses of the copper heat spreader to optimize conduction within the bounds of the package. In addition, forced air convection is optimized, within the package limitations. Optimum cooling conditions are obtained by parameterization of variables: air flow direction, fan position, and package placement.

关键词： Heating Electronic packaging thermal management Copper Atmospheric modeling Temperature Cooling Substrates

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An ANN-Physical Hybrid GaN HEMT Model for 5G Power Amplifiers

An ANN-Physical Hybrid GaN HEMT Model for 5G Power Amplifier...

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IEEE Asia-Pacific conference on Circuits and Systems

作者： Zhongzhiguang Lu Hanchao Li Yihao Zhuang Hanlin Xie Geok Ing Ng Yuanjin Zheng School of Electrical and Electronic Engineering Nanyang Technological University Singapore Agency for Science Technology and Research (A*STAR) Institute of Microelectronics (IME) Singapore

ISBN: (数字)9798350378771

ISBN: (纸本)9798350378788

Compared to other semiconductor technologies, GaN power amplifiers (PAs) demonstrate better efficiency, gain and thermal performance, which makes them very promising in the present 5G era. To design 5G GaN PAs, accurate and scalable GaN HEMT device modelling is very necessary. This paper proposes a hybrid physical GaN HEMTs model for 5G power amplifiers. Combine the concept of ASM-GaN-HEMT model and ANN technique, the simulation results of the proposed model in this paper are highly consistent with the test results in terms of the DC and RF characteristics. Multi-Objective Particle Swarm Optimization (MOPSO) is employed to derive the accurate surface potential values, which are the key parameters in ASM-GaN-HEMT. With the dimension information in the target equations, the derived GaN model will have certain scalability in device size. Also, artificial neural network (ANN) technique is utilized to build charge and nonlinear current models with the surface potential values. Effective self-heating and trapping effect models are introduced to demonstrate nonlinear effects. The proposed method significantly improves the accuracy of the S parameter compared to traditional models, reducing the large signal performance error to within 5%.

关键词： Performance evaluation Accuracy 5G mobile communication Scalability Power amplifiers HEMTs Mathematical models Hybrid power systems Gallium nitride Integrated circuit modeling

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Enhancing Quantum NLP Robustness - Analysis on Noisy Models for Quantum Sentiment Classification

Enhancing Quantum NLP Robustness - Analysis on Noisy Models ...

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International conference of Advanced Informatics: Concept, Theory and Application (ICAICTA)

作者： Fariska Zakhralativa Ruskanda Michael Jonathan Halim Farizki Kurniawan Infall Syafalni Rahmat Mulyawan Akio Higo School of Electrical Engineering and Informatics Bandung Institute of Technology Indonesia Artificial Intelligence Center Bandung Institute of Technology Bandung Indonesia University Center of Excellence on Microelectronics Bandung Institute of Technology Indonesia Systems Design Lab School of Engineering The University of Tokyo Tokyo Japan

ISBN: (数字)9798331520311

ISBN: (纸本)9798331520328

This research aims to improve the robustness of Quantum Natural Language Processing (QNLP) models in the presence of noise. Using Lambeq, an open-source library for quantum NLP, we focus on sentiment classification tasks to eval-uate the impact of noisy quantum models. Our study involves the application of three types of optimizers: Simultaneous Perturbation Stochastic Approximation (SPSA), Nelder-Mead, and Adam. The performance and resilience of these optimizers are assessed under various noise conditions to determine their effectiveness in maintaining model accuracy and stability. The research shows that the Adam optimizer outperforms SPSA and NelderMead in QNLP simple sentiment analysis tasks, both in noiseless and noisy environments. Adam achieved 96.67 % accuracy in noiseless conditions, significantly higher than SPSA's 83.33 % and Nelder-Mead's 53.33%, highlighting its superior performance in optimizing quantum circuits. Moreover, in noisy simulation, Adam outperforms others with 70.00% accuracy performance. The work is useful for NLP implementations in quantum computers. This research is essential because the noisy nature of current quan-tum computers makes it difficult for QNLP models to perform accurately and reliably.

关键词： Computers Sentiment analysis Accuracy Computational modeling Noise Quantum mechanics Stochastic processes Robustness Stability analysis Noise measurement

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Computing Systematic Offset in Amplifiers Using Hierarchical Graph-Based Sizing and Biasing

Computing Systematic Offset in Amplifiers Using Hierarchical...

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2007 International conference on microelectronics (ICM'07)

作者： Ramy Iskander Marie-Minerve Louerat Andreas Kaiser LIP6-SOC Laboratory Université Pierre et Marie Curie Paris France ISEN Department I.E.M.N Lille France

A hierarchical graph-based sizing and biasing method of analog circuits has been previously developed. However, conflicts appear in dependency graphs generated by our method due to the large number of degrees of freedom in analog design. Therefore, an enhanced method is presented that automatically detects conflicts and resolves them by inserting systematic offset voltages as additional degrees of freedom into the graph. During graph evaluation, a systematic offset is evaluated as the voltage difference between conflicting nodes, which can be eliminated by transposing it to the inputs of the circuit. As an example, we have successfully applied our method to the sizing of a single-ended two-stage operational amplifier.

关键词： Analog circuits Circuit synthesis Equations Voltage Hardware design languages Laboratories Operational amplifiers Computational modeling Circuit simulation Analog computers

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Rad-Hard Versions of SPICE MOSFET Models for Effective simulation of SOI/SOS CMOS Circuits Taking into Account Radiation Effects

Rad-Hard Versions of SPICE MOSFET Models for Effective Simul...

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European conference on Radiation and its Effects on Components and Systems

作者： Konstantin O. Petrosyants Igor A. Kharitonov Lev M. Sambursky Alexander S. Mokeev Institute for Design Problems in Microelectronics Russian Academy of Sciences National Research University "Higher School of Economics" (Moscow Institute of Electronics and Mathematics)

ISBN: (纸本)9781509002337

SPICE modeling of SOI/SOS MOSFETs with account for static (total dose) and dynamic (heavy ions and transient ionizing radiation) radiation-induced effects including SPICE models, model parameter extraction and applications for circuit simulation, is described for radiation hard Silicon-on-Insulator/Silicon-on-Sapphire technologies.

关键词： Aerospace electronics Circuit analysis CMOSFET circuits Integrated circuit reliability Monolithic integrated circuits Parameter extraction Radiation hardening Semiconductor device modeling Semiconductor device reliability

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design of A Voltage Comparator using for Switching Regulator

Design of A Voltage Comparator using for Switching Regulator

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7th International conference on ASIC (ASICON 2007), vol.2

作者： Yuanjie Bin Feng Quanyuan Institute of Microelectronics Southwest Jiaotong University Chengdu Sichuan China

In this paper, a comparator used for switching regulator is presented. This design uses a bias stage with the structure of negative feedback to get more stable DC bias voltages. The comparator is formed by 3 stages: input stage, a emitter coupled differential pair;middle stage, a folded cascode amplifier and output stage be consisted by a Active Load Inverter. These simulation result shown in this paper is got by Hspice with a 0.6um CMOS technologies and 3.6V power supply.

关键词： Voltage Regulators Negative feedback CMOS technology Power supplies MOSFETs Circuits Delay Power dissipation Semiconductor device modeling

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Co-design for Extreme Large Package Solution with Embedded Fine Pitch Interposer (EFI) Technology

Co-design for Extreme Large Package Solution with Embedded F...

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IEEE Electronic Components and Technology conference

作者： F.X. Che David Ho T.C. Chai Institute of Microelectronics A*STAR (Agency for Science Technology and Research) Innovis Tower Singapore

Embedded Fine pitch Interposer (EFI) technology using Fan-out approach is demonstrated for heterogeneous integration as a cost effective and enabling technology. Co-design modelling methodology is established for EFI technology, including wafer process, package assembly and board level reliability to optimize structure design, wafer process, assembly process and material selection. Through wafer warpage modelling, desirable glass carrier, photo-dielectric and molding compound materials are suggested to reduce wafer warpage. Effects of second molding and stiffener on assembly induced package warpage are simulated. Board level solder joint reliability is investigated and optimized based on simulation results. The optimized materials and structure design are determined based on co-design modeling and simulation results to achieve successful EFI wafer fabrication, assembly process and board level reliability for extreme large package with EFI interposer.

关键词： co-design modelling finite element analysis board level reliability EFI interposer warpage

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