The present papers deals with the designing of MEMS gyroscope for high driving resonance frequency and to study the effects of various structural parameters on the device performance. The design is based on comb capac...
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ISBN:
(纸本)9781467361491
The present papers deals with the designing of MEMS gyroscope for high driving resonance frequency and to study the effects of various structural parameters on the device performance. The design is based on comb capacitor configuration, which is excited by electrostatic force, sensing is based on transverse axis movement and is designed with 2μm thick polycrystalline silicon layer. The device is modeled for single DOF in accordance with standard SOI-MUMP's technology using MEMS Pro v5.1 simulation tool.
An efficient model scheme that combines the nonlinear behaviour of the input parasitics with the intrinsic fundamental device rate equations of the Vertical Cavity Surface Emitting Lasers (VCSELs) is proposed. The mod...
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An efficient model scheme that combines the nonlinear behaviour of the input parasitics with the intrinsic fundamental device rate equations of the Vertical Cavity Surface Emitting Lasers (VCSELs) is proposed. The model parameter values are extracted using a fully defined systematic technique from dc current-optical power-voltage (I-L-V) and ac S{sub}11-S{sub}21 response measurements. Extraction and simulation procedures are implemented in commercial integrated circuit design tools. Investigation on their accuracy and efficiency is performed by comparing simulation results with the experimental measurements.
As the feature size scaling down, the integration degree increasing, the power density increasing and the introduction of low thermal conductivity material flourishing, the integrated circuit (IC) is facing a serious ...
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ISBN:
(纸本)9781538676691;9781538676684
As the feature size scaling down, the integration degree increasing, the power density increasing and the introduction of low thermal conductivity material flourishing, the integrated circuit (IC) is facing a serious thermal challenge. Thermal analysis is getting essential for high power IC design. Hotspot, usually constructed by high power devices and BEOL, has been considered as the most urgent concern, with a localized power density above 500 W/cm~2. In the direct numerical simulation, the great amount of the hotspots and the large size differences contribute to huge mesh numbers, which means high computational cost. In this paper, a new calculation method on hotspots uniformization based on thermal spreading theory and the superposition principle is proposed. Temperature excess distribution can be divided into two parts: the local hotspots temperature distribution and the background distribution. The simplified method is verified by a thermal numerical simulation. The present thermal effectiveness shows potential for the high power IC design.
This research presents analysis of modeling on Parallel Triple Quantum Dots (TQD) by using SIMON (simulation Of Nano-structures). Single Electron Transistor (SET) is used as the basic concept of modeling. We design th...
This research presents analysis of modeling on Parallel Triple Quantum Dots (TQD) by using SIMON (simulation Of Nano-structures). Single Electron Transistor (SET) is used as the basic concept of modeling. We design the structure of Parallel TQD by metal material with triangular geometry model, it is called by Triangular Triple Quantum Dots (TTQD). We simulate it with several scenarios using different parameters; such as different value of capacitance, various gate voltage, and different thermal condition.
The current threshold elements of direct and reverse cyclic shift are developed. This logical elements are recommended as memory elements for the construction of relevant controllers and devices for tolerance control ...
The current threshold elements of direct and reverse cyclic shift are developed. This logical elements are recommended as memory elements for the construction of relevant controllers and devices for tolerance control of analog signals, which used in diagnosis of complex electronic equipment. The mathematical apparatus used in the design is a linear algebra. The basic equations and results of computer modeling of the developed cyclic shift schemes are presented. Computer simulation was carried out in the Cadence environment on models of field-effect transistors XB06.
Green design features with ultra-low power consumption and ultra-low voltage supply. Considering on about 26 m V is the silicon power fed limit, below 100 mV level, two accurate ultra-compact I-V models for SMIC 0.18...
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ISBN:
(纸本)9781510806450
Green design features with ultra-low power consumption and ultra-low voltage supply. Considering on about 26 m V is the silicon power fed limit, below 100 mV level, two accurate ultra-compact I-V models for SMIC 0.18μm process Nand PMOS transistors will be extracted with which CMOS NOT gate and its amplifier are analyzed by comparing exponential power law and SPICE running tool. The modeling methodology on new device or circuit starts with a candidate for one region of features in a basic construction formulae set selected by mechanism standards, then compare the two classes of data resulted from in right side the input-output characteristic and in left side the respondings of your first to/or No.n candidate, to minimize the errors between the classes, doing in above steps in cycle, at last you met an apt of novel model group in state-of-theart kept in your mind. In general, the ultra-low subthrethod（5m V） MOSFETs are related to the input signals in parameters. From the single MOSFET to the two tubes we iterated from the simulation results to those models' grinded fruits in our computers, and focused on scanning the width length ratio. Our time-variant models are in form of e exponential term for NMOSFET and plus quadratic term for PMOSFET. All in all the works built up novel milestones for first author proposed brain health microelectronics（BHM）.
We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and sol...
We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.
This paper proposes a new method for modeling electromagnetic kinetic energy transducers and gives analytical expressions that enable the design of efficient energy conditioning circuitry. The introduced transducer mo...
This paper proposes a new method for modeling electromagnetic kinetic energy transducers and gives analytical expressions that enable the design of efficient energy conditioning circuitry. The introduced transducer modeling approach achieves high accuracy without requiring a large set of parameters. The presented transducer characterization allows physical insight into fully assembled and packaged transducers in order to extract the required transducer model parameters without knowledge of the individual components. Moreover, the electromagnetic coupling, the parasitic damping, and the optimal load can be modeled with a dependence on the external excitation. Precise co-simulation with CMOS integrated energy conditioning circuitry is possible implementing this model in a circuit simulator.
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