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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"

共 1418 条记录，以下是151-160 订阅

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Finite Element Model for Prediction of Back-End-of-Line Process Induced Wafer Bow for Patterned Wafer

Finite Element Model for Prediction of Back-End-of-Line Proc...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Prashant Kumar Singh Kashi Vishwanath Machani Dirk Breuer Michael Hecker Karsten Meier Frank Kuechenmeister Marcel Wieland Karlheinz Bock GlobalFoundries Dresden Module One LLC & Co. KG Wilschdorfer LandStraße. 101 Dresden Germany Technische Universität Dresden Institute of Electronic Packaging Technology Dresden Germany

With the increased technological advancement within the semiconductor industry, there has been a need for wafer level products that allow for higher electrical performance and increased power efficiency. This leads to more metal content in the back-end-of-line wafer fabrication process. During the wafer fabrication process a large amount of stress is generated in back-end-of-line which can lead to severe wafer bow. High wafer bow can cause fabrication issues. In order to understand and predict the wafer bow, finite element method based models were developed to support back-end-of-line process step definitions and setting design rules to limit the wafer bow. In the finite element method based model, the fully patterned back-end-of-line stack is replaced by effective orthotropic material properties generated at several die level models to capture the non-uniform metal density across the wafer. Finally, the current study shows that the newly developed finite element method models are in good agreement with experimental data.

关键词： Semiconductor device modeling Fabrication Micromechanical devices Electronics industry Metals Predictive models Finite element analysis

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Avalanche Ruggedness Evaluation on Planar and Trench SiC MOSFETs: An Experimental and TCAD simulation Study

Avalanche Ruggedness Evaluation on Planar and Trench SiC MOS...

引用

International conference on (ICEPT) Electronic Packaging Technology

作者： Tao Luo Runding Luo Zaiman Xiang Jianjun Zhuang Guoqi Zhang Jiajie Fan Academy for Engineering & Technology Fudan University Shanghai China Changzhou Galaxy Century Microelectronics Co. Ltd. Changzhou China EEMCS Faculty Delft University of Technology Delft the Netherlands Research Institute of Fudan University in Ningbo Ningbo China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In the domain of power electronics, especially for applications requiring high power, high temperature, and high frequency, Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors (SiC MOSFETs) stand out due to their excellent properties such as high thermal conductivity, elevated breakdown electric field, and minimal power loss. These devices are pivotal in the reliability and safety of electric vehicles, where avalanche-induced failures represent a significant risk within automotive uses. This study extensively explores the avalanche ruggedness of both planar and trench SiC MOSFET configurations through a combination of Unclamped Inductive Switching (UIS) testing in single and multiple pulse scenarios, and Technology Computer-Aided design (TCAD) simulations. Initial UIS experiments revealed the primary failure mechanisms and their origins in SiC MOSFETs. Following empirical analysis, TCAD simulations were employed to develop comprehensive models of these devices., enhancing the understanding of failure dynamics during UIS conditions. The integration of empirical and simulation data supports the creation of advanced strategies to reduce the risk of avalanche failures, thereby enhancing the durability and reliability of Wide Bandgap Semiconductor devices.

关键词： MOSFET Analytical models Silicon carbide Computational modeling Failure analysis Metals Switches

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design of Area Efficient Adders using Quantum-dot Cellular Automata (QCA)

Design of Area Efficient Adders using Quantum-dot Cellular A...

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Recent Trends in microelectronics, Automation, Computing and Communications Systems (ICMACC), International conference on

作者： Kishore Pinninti Sunil Goud Koppula Abhinav Krishna Narvaneni Sai Rakesh Gundapuneni Shivam Madnoorkar Electronics and Communications Engineering VNR Vignana Jyothi Institute of Engineering and Technology Hyderabad India

The Full Adder circuits are the basic unit of logical and digital arithmetic circuits. The QCA (Quantum-dot Cellular Automata) is one of the best evolving nano-electronics technology, to overcome the scaling problems of the CMOS technology at nano-level. Inverters and Majority gates are the basic QCA circuits, which are used in this paper to design the Full Adder, Ripple-Carry adder and Carry-Skip adder. In this paper, the Multilayer QCA adders occupy less area as compared to the Coplanar QCA adders. QCA based multilayer and coplanar adders are designed using the coplanar and multilayer Full Adder respectively and the total energy dissipation and the functional simulation results are carried out using the QCAdesigner-E 2.0.3 and QCAdesigner 2.0.3 software respectively.

关键词： Semiconductor device modeling Computational modeling Quantum dots Energy dissipation Automata Nonhomogeneous media CMOS technology

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2021 IEEE 16th International conference on the Experience of designing and Application of CAD Systems, CADSM 2021 - Proceedings

2021 IEEE 16th International Conference on the Experience of...

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16th IEEE International conference on the Experience of designing and Application of CAD Systems, CADSM 2021

The proceedings contain 53 papers. The topics discussed include: adaptation of CAD-system Creo for development of individual spinal implant;visual modeling of the landslide slopes stress-strain state for the computer-aided design of retaining wall structures;simulation of electromagnetic oscillations in an active telegraph line;increasing the strength of materials by topological optimization methods;sequential estimation of reliability parameters of telecommunication and radioelectronic systems;image enhancement based on adaptive power-law image intensity transformation;and simulation of remote-controlled power supplies for laboratory and research work.

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Memristors Threshold Based Physical Unclonable Function

Memristors Threshold Based Physical Unclonable Function

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International conference on microelectronics, ICM

作者： Aref Al-Tamimi Shawkat Ali Yuan Cao Amine Bermak College of Science and Engineering Hamad Bin Khalifa Univesty Qatar Department of Electrical and Computer Engineering King Abdullah University of Science and Technology Saudi Arabia College of IoT Hohai University

ISBN: (纸本)9781665493253

This paper presents a novel physical unclonable function (PUF) design that extracts entropy of random threshold voltage variations of a memristor-based cell. Each cell consists of two equivalent memristors in series. Applying an increasing voltage within the threshold range across the cell causes the memristor with a lower threshold to change state before the other. This uncertainty is then digitized to produce a random output. The design has no area/power hungry CMOS comparator overhead. Instead, only an output memristor holds the PUF response bit. The PUF signature is extracted during the set process. The proposed PUF cell which consists of two filament memristor sub-models connected in series is modeled, designed, implemented, and simulated using SystemC-AMS. simulation results show that the effect of the sneak path does not alter the PUF response.

关键词： Semiconductor device modeling Uncertainty Manufacturing processes simulation Memristors Physical unclonable function Threshold voltage

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Recent Development in Electro-thermal modeling and simulation of OLEDs

Recent Development in Electro-thermal Modeling and Simulatio...

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International conference on Optoelectronics and Measurement, ICOM 2019

作者： Gu, Changfeng Dai, Qinyong Zhou, Juanjuan Song, Xinyu Zhou, Zhuoli Lu, Chengyu Peng, Yingquan Institute of Microelectronics College of Optical and Electronic Technology China Jiliang University Hangzhou China

ISBN: (纸本)9789813341098

Compared with traditional LEDs, OLEDs have a lower luminous efficiency, so the surface must be much larger to provide a light output equivalent to the total luminous flux. Brightness uniformity is a challenge for equipment engineers. High brightness will increase power consumption, causing Joule heat to self-heat. An increase in temperature may cause the performance of the OLED to decrease, and also cause the lateral brightness to become very uneven. Therefore quantitatively understand the thermal environment of multilayer composite devices under high current, and use this as a guide to mitigate the impact of heating by optimizing device and system design becomes very important. In this paper, recent progress regarding to the research on electro-thermal modeling of OLEDs is reviewed, with respect to the fundamental understanding of modeling of eletro-thermal processes. The current state of the simulation research is summarized and simulation methods is described. © 2021, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Luminance

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Thermomechanical Reliability of Bond Wires in Power Modules Subjected to Power Cycling

Thermomechanical Reliability of Bond Wires in Power Modules ...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Mohamed Boutaleb Fabrice Roqueta Fabrice Moreau Yann Brenet Laurent Barreau Analog Power & Discrete MEMS and Sensors Group Discrete & Filter Division (DFD) Quality Manufacturing & Technology BEM&T R&D STMicroelectronics Tours France

ISBN: (数字)9798350393002

ISBN: (纸本)9798350393019

In the context of the expanding automotive market, power modules have emerged as key components, driving the need for compact devices, enhanced thermal management, and higher power density. These modules, which offer considerable benefits over discrete components, are subjected to thermomechanical stresses throughout their life cycle, primarily due to active power cycling and passive temperature cycling, which can induce various failure modes. This paper focuses on the reliability of power modules under the specific conditions of power cycling. The effect of varying wire number and diameter on the thermomechanical response and reliability of power modules is assessed through a combination of experimental reliability tests and finite element method simulations. It has been demonstrated that the robustness of power modules, in terms of the number of cycles before failure, is significantly improved by a greater number of wires with lower diameter. This comprehensive analysis of bond wire reliability under power cycling conditions offers valuable insights into their failure mechanisms, contributing to the enhancement of power module design and reliability. This work is particularly pertinent as the industry moves towards increased reliance on power modules, especially for EVs, where power electronics reliability is paramount.

关键词： Thermomechanical processes Multichip modules Reliability engineering Robustness Finite element analysis Wire Reliability Plastics Strain Load modeling

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Reliability Study of Various Edge Terminations of Silicon Carbide Power Devices Using simulation Methods

Reliability Study of Various Edge Terminations of Silicon Ca...

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Electronic Information Engineering and Computer Technology (EIECT), International conference on

作者： Wenbo Yue Jia Liu Zheng Zhang Cairong Huang Nengjie Huo School of Microelectronics South China Normal University Foshan China Technology Development Ascen Power Semiconductor Co. LTD. Guangzhou China

ISBN: (数字)9798331528850

ISBN: (纸本)9798331528867

Reliability is one of the major concerns for SiC devices. A proper edge termination structure would enable SiC devices to operate at designed voltages because it mitigates the electric field aggregation caused by the cylindrical or spherical junctions. However, a great number of research has been reported on studying the optimization of edge terminations to achieve higher breakdown voltage (BV). In contrast, research on the impact of edge termination design on devices' reliability remains limited. In this work, floating field ring (FFR), single-zone junction termination extension (SZ-JTE), ring-assisted JTE (RA-JTE), multi-floating zone JTE (MFZ-JTE), and Hybrid-JTE are studied. Their reliability performance is evaluated by comparing the BV stability of these termination designs under different implantation doses, critical dimension (CD) deviations, and fixed SiC/SiO 2 interface charge through technology computer-aided design (TCAD) simulations. Among all the edge terminations listed, Hybrid-JTE has exhibited a champion reliability.

关键词： Performance evaluation Analytical models Silicon carbide Computational modeling Reliability engineering Stability analysis Silicon Robustness Reliability Junctions

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modeling of Wireless Sensor Network Based on Functioning Parameters of Unevenly Distributed Nodes

Modeling of Wireless Sensor Network Based on Functioning Par...

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International conference on CAD Systems in microelectronics (CADSM)

作者： Olexander Belej Natalia Nestor Iryna Artyshchuk Nataliia Spas Department of Computer-Aided Design Lviv Polytechnic National University Lviv Ukraine

Connection and routing parameters of wireless sensor networks are considered for static topologies and uniform distribution of nodes. Most of the studied models do not take into account the parameters of message connectivity and their delivery time between unevenly distributed nodes. in the proposed study, models of connectivity analysis and message delivery between unevenly distributed nodes are developed. Models of wireless sensor networks with uniform and normal distribution of nodes and research on the network connectivity parameter for these models are proposed. Network models with different types of distributions are built based on the Erdosh-Rani random graph model, which allows describing of the connectivity of wireless sensor networks as the connectivity of a random graph, that is, to determine the connectivity of wireless sensor networks with the probability of finding the distance between two vertices of the graph. simulation models with a uniform and normal distribution of nodes are implemented to investigate the probability of network connection. The choice of these types of distribution is explained by possible real distributions of nodes in the studied area.

关键词： Wireless sensor networks Solid modeling Analytical models Time-frequency analysis Wireless networks Interference Logic gates

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Reduction of empiricism in the solder joint reliability assessment of QFN packages by using thermo-mechanical simulations

Reduction of empiricism in the solder joint reliability asse...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： M. van Soestbergen R. Roucou M. Rebosolan J.J. M Zaal NXP Semiconductors Package Innovation Gerstweg 2 Nijmegen Netherlands NXP Semiconductors Corporate Quality Gerstweg 2 Nijmegen Netherlands dep. of Aerospace Engineering Delft University of Technology Kluyverweg 1 Netherlands

To ensure sufficient field life of solder joints, standardized stress tests are performed during the development phase of products, where calibrated thermo-mechanical simulations are frequently used to ensure a potentially sufficient robustness margin. In this work we show how simulations are calibrated for the QFN (Quad Flat No leads) package family. Using thorough failure analysis, we found that for QFN packages two types of solder joint failure modes can occur. The first failure mode is a brittle fracture through the intermetallic region near the solder interface, the other mode is a crack through the bulk of the solder. In the simulations we handle both failure modes using two different failure metrics. For the brittle fractures we analyzed the volumetric strain energy density in a thin region near the interface. For bulk fails we computed the volume-averaged inelastic strain energy density across the whole solder joint. Using both metrics we found a correlation between simulation and experimental results, where Miner’s rule was used to correlate the results of any non-functional anchor joint to the experimental results of the functional joints. The correlation can be used to predict the solder performance upfront in the design phase, and thus reduce the experimental effort during product development.

关键词： Measurement Correlation Computational modeling Thermomechanical processes Failure analysis Fatigue Intermetallic

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