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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"

共 1418 条记录，以下是191-200 订阅

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Bias temperature instability characterization and modeling for 0.18um CMOS under extreme thermal stress conditions 16

Bias temperature instability characterization and modeling f...

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2021 International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design, SMACD 2021 and 16th conference on PhD Research in microelectronics and Electronics, PRIME 2021

作者： Tran, Yen Nomura, Toshihiro Cherchali, Mohamed Salim Tassin, Claire Deval, Yann Maneux, Cristell Etudes et Production Schlumberger Clamart France Univ. Bordeaux Bordeaux INP UMR CNRS 5218 IMS Laboratory Talence France

ISBN: (纸本)9783800755899

We investigated the significance of 0.18um CMOS (Complementary Metal-Oxide-Semiconductor) degradation due to bias temperature instability (BTI) under extreme temperature operations (150°C and 210°C). The transistors have been applied dedicated DC bias and temperature conditions to investigate the wear-out mechanism in specific severe environment for oilfield applications. The aging tests have been monitored up to 1,000 hours. These results are preliminarily used to develop equations reflecting aging laws to be included in commercial software tool for further investigation at logic circuit level. © VDE VERLAG GMBH.

关键词： Metals

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A symmetry enhancement method for process modeling and its applications in IC design and OPC

A symmetry enhancement method for process modeling and its a...

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conference on design, Process Integration, and Characterization for microelectronics

作者： Lei, JJ Sanie, M Lay, DKH Numer Technol Inc San Jose CA 95134 USA

ISBN: (纸本)0819444391

When applying OPC techniques in manufacturing of complex and delicate integrated circuits, any improvement in accuracy of computing aerial images is crucial. simulation accuracy is demanded more and more today as the feature sizes are being decreased, while the computation speed has to be kept in a reasonable pace. As a consequence, loss of symmetry in simulation appears to be more problematic and has begun to require attention. Quantization, sampling and intensive iterative computation are all sources of the problem. In this paper, we study the problem of symmetry preservation, present a method of symmetry enhancement, and apply the method in process simulation. The computing results of this method are satisfactory and promising, having laid a foundation for future study on its application in OPC, and of its effect on the performance of certain symmetric IC patterns.

关键词： aerial images optical proximity correction symmetry

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Optical micro-machined ultrasound sensors with a silicon photonic resonator in a buckled acoustical membrane 20

Optical micro-machined ultrasound sensors with a silicon pho...

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20th International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems (EuroSimE)

作者： Westerveld, W. J. Leinders, S. M. van Neer, P. L. M. J. Urbach, H. P. de Jong, N. Verweij, M. D. Rottenberg, X. Rochus, V. IMEC Kapeldreef 75 B-3001 Leuven Belgium Delft Univ Technol Dept ImPhys Lorentzweg 1 NL-2628 CJ Delft Netherlands TNO Oude Waalsdorperweg 63 NL-2597 AK The Hague Netherlands

ISBN: (纸本)9781538680407

Future applications of ultrasonography in (bio-)medical imaging require ultrasound sensor matrices with small sensitive elements. Promising are opto-mechanical ultrasound sensors (OMUS) based on a silicon photonic ring resonator embedded in a silicon-dioxide acoustical membrane. This work presents new OMUS modelling: acousto-mechanical non-linear FEM and photonic circuit equations. We show that initial wafer stress needs to be considered in the design: the acoustical resonance frequency changes considerably and OMUS sensitivity differs for up- or downwards buckled membranes. Simulated acoustical resonance frequency agrees well with measurements, assuming realistic SOI wafer stress. Measured sensitivity showed large device-to-device variation and simulations agree within this order of magnitude. We conclude that careful modeling of stress is necessary for the design of robust and sensitive sensors.

关键词： conferences microelectronics Micromechanical devices

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Organic transistor parameter estimation and accurate modeling for process optimization 16

Organic transistor parameter estimation and accurate modelin...

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作者： Liguori, Rosalba Licciardo, Gian Domenico Di Benedetto, Luigi Italy

ISBN: (纸本)9783800755899

The development of accurate tools and models able to analyze and predict the electronic device properties is compulsory to promote the technological advancement and particularly to improve fabrication process in the case of unconventional materials. In this work the model proposed for the interpretation of the data obtained with the admittance spectroscopy technique is useful for investigating the causes of the property differences in organic thin film transistors fabricated with various gate dielectrics. The extracted parameters show that the use of the UV-cured copolymer PVP-co-PMMA as dielectric layer in a pentacene-based OTFT, instead of the as-deposited copolymer or the standard polymer PVP, reduces the ion diffusion through gate insulator and the density of trap states at the insulator-semiconductor interface, while improving the semiconductor structural order, therefore producing devices with lower and stable threshold voltage and lessened hysteresis. © VDE VERLAG GMBH.

关键词： Gate dielectrics

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Kriging Metamodeling-Assisted Multi-Objective Optimization of CMOS Current Conveyors 15

Kriging Metamodeling-Assisted Multi-Objective Optimization o...

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15th International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 14th conference on PhD Research in microelectronics and Electronics (PRIME)

作者： Kotti, Mouna Fakhfakh, Mourad Tlelo-Cuautle, Esteban Univ Sousse Sousse Tunisia Univ Sfax Sfax Tunisia INAOE Cholula Mexico

ISBN: (纸本)9781538651537

In this brief, we deal with the generation of the Pareto front for multi-objective analog circuit sizing optimization. The main idea of the proposed work consists of using metamodels of the considered performances to generate the set of nondominated solutions. These models serve as evaluators. They offer several advantages, mainly their high precision for reproducing the real behavior of the considered performances, and their very rapid evaluation, when compared to their counterpart, i.e. the in-loop-based sizing technique. Multiobjective particle swarm optimization (MOPSO) technique is used as the optimization metaheuristic. The proposed approach is first applied to some mathematical test functions, then, we consider the optimal sizing of MOS current conveyors, where two conflicting objectives are considered, namely maximizing the current transfer cutoff frequency (fci) and minimizing the parasitic X-port resistance (Rx). Obtained results are compared to those reached using the conventional in-loop optimization technique. Hspice simulations, using AMS 0.35 mu m CMOS technology, are given to highlight these reached results.

关键词： Mathematical model Particle swarm optimization Optimization Analog circuits Analytical models Integrated circuit modeling Metamodeling"

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Long-Term Reliability Management For Multitasking GPGPUs 16

Long-Term Reliability Management For Multitasking GPGPUs

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16th International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 15th conference on PhD Research in microelectronics and Electronics (PRIME)

作者： Sun, Zeyu Kim, Taeyoung Chow, Marcus Peng, Shaoyi Zhou, Han Kim, Hyoseung Wong, Daniel Tan, Sheldon X-D Univ Calif Riverside Dept Elect & Comp Engn Riverside CA 92521 USA Univ Calif Riverside Dept Comp Sci & Engn Riverside CA 92521 USA

ISBN: (纸本)9781728112015

This paper proposes long-term reliability management for spatial multitasking GPU architectures. Specifically, we focus on electro-migration (EM)-induced long-term failure of the GPU's power delivery network. A distributed power delivery network model at functional unit granularity is developed and used for our EM analysis of GPU architectures. We use a recently proposed physics-based EM reliability model and consider the EM-induced time-to-failure at the GPU system level as a reliability resource. For GPU scheduling, we mainly focus on spatial multitasking, which allows GPU computing resources to be partitioned among multiple applications. We find that the existing reliability-agnostic thread block scheduler for spatial multitasking is effective in achieving high GPU utilization, but poor reliability. We develop and implement a long-term reliability-aware thread block scheduler in GPGPU-Sim, and compare it against existing reliability-agnostic scheduler. We evaluate several use cases of spatial multitasking and find that our proposed scheduler achieves up to 30% improvement in long-term reliability.

关键词： Reliability Graphics processing units Power system reliability Multitasking Wires Instruction sets Computational modeling

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Warpage simulation and DOE analysis with application in Package-on-Package development

Warpage simulation and DOE analysis with application in Pack...

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EuroSimE 2008 - International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Micro-Systems

作者： Sun, Wei Zhu, W.H. Wang, C.K. Sun, Anthony Y.S. Tan, H.B. Packaging Analysis and Design Center 5 Serangoon North Ave 5 Singapore 554916 Singapore

ISBN: (纸本)9781424421282

The current paper talks about warpage modeling and validation, DOE analysis and approximation model derivation, and solving of actual warpage problem. Warpage of actual PoP (Package-on-Package), both the top and bottom packages, is investigated extensively through modeling and experimental measurement. It is found that the current warpage modeling method using average CTE and linear elastic analysis yields acceptable accuracy. Full factorial DOE analysis using ANSYS, EXCEL and JMP is performed to analyze the impact of design and material on warpage of both bottom and top packages. Surprisingly it is observed from DOE analysis that die size has completely different impact on warpage for top and bottom package. An actual problem, where a PoP top package exhibits large crying mode warpage, is quickly solved with the established warpage analysis method. ©2008 IEEE.

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Mechanistic Model for the Stress-Strain Response of Double-Layered PSA 19

Mechanistic Model for the Stress-Strain Response of Double-L...

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19th International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems (EuroSimE)

作者： Huang, H. Dasgupta, A. Univ Maryland Ctr Adv Life Cycle Engn College Pk MD 20742 USA

ISBN: (纸本)9781538623596

Experiments and modeling are used to understand the mechanics of the deformation mechanisms in double-layers pressure sensitive adhesives (PSAs). The mechanical role of the carrier layer and the resulting stress state in a double-layered pressure-sensitive adhesive (PSA) system, as shown in Figure 1, is presented in this paper. This description of the deformation mechanism is developed based on empirical results of stress-strain response of double-layered PSA-bonded assemblies and in-situ observation of the deformation of carrier layer during the debonding process. This study of double-layered PSAs, is motivated by the fact that there are currently very few studies in the literature regarding the mechanics behind the secondary transition observed in the stress-strain and creep responses of PSA-bonded assemblies. Empirical observations verify that this behavior is due to sequential cavitation and fibrillation in two adhesive layers caused by the new bonding interface introduced by the carrier layer. The effect of carrier thickness and strength of adhesion between PSA and substrates on the stress-strain response of double-layered PSA systems is also important. In-depth, physics-based understanding of the relationship between flexural rigidity of carrier layer and stress-strain performance of PSA-bonded assemblies will help to optimize the design of double-layered PSA joints for a given substrate material. The modeling tasks in this paper use finite element analysis is to understand the effects of carrier layer stiffness on the stress-strain response of PSA bonded assembly. Conclusions from this study will be applied to generate semi-analytic mechanistic models for modeling the stress-strain behavior of double-layered PSA joints. This modeling approach will be an enhancement of earlier model presented for single-layered PSAs ([1]).

关键词： Stress Strain Finite element analysis Substrates Bonding Deformable models Cavity resonators

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Adaptive test bench generation, simulation and parameter extraction for AMS circuitry 16

Adaptive test bench generation, simulation and parameter ext...

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作者： Meyer, Alexander Weihs, Léon Wunderlich, Ralf Heinen, Stefan Integrated Analog Circuits and RF Systems Laboratory RWTH Aachen University Kopernikusstr. 16 AachenD-52074 Germany

ISBN: (纸本)9783800755899

This paper presents a novel semi-automatic test bench generation and parameter extraction workflow for analog-mixed signal circuitry. Specific test benches for a given circuit are automatically generated, simulated, and model parameters are extracted. By relying on a modular test bench structure, changes in the circuit’s design or port list can be automatically considered, facilitating the overall verification process and avoiding errors during the parameter extraction phase. Hence, precise and pin-accurate models can be generated faster and more reliably. A first implementation of this workflow using Cadence’s SKILL language is shown. © VDE VERLAG GMBH.

关键词： Parameter extraction

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Advanced Risk Analysis of Interface Delamination in Semiconductor Packages: A Novel Experimental Approach to Calibrating Cohesive Zone Elements for Finite Element Modelling 19

Advanced Risk Analysis of Interface Delamination in Semicond...

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19th International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems (EuroSimE)

作者： Pfluegler, Nadine Reuther, Georg M. Goroll, Michael Udiljak, Dominik Pufall, Reinhard Wunderle, Bernhard Infineon Technol AG Campeon 1-15 D-85579 Neubiberg Germany Tech Univ Chemnitz Reichenhainer Str 70 D-09126 Chemnitz Germany

ISBN: (纸本)9781538623596

Interfacial delamination in semiconductor packages during their lifetime is a reliability risk. For the realisation of a "design for Reliability" approach, the whole product needs to be studied virtually using Finite Element (FE) simulations. Only this approach allows for the evaluation of possible failure mechanisms, which is an integral part of risk analyses in reliability assessments. The Cohesive Zone Method enables the prediction of interfacial damage initiation and damage evolution in the simulation model. For accurate simulation results, not only material models need to be chosen wisely, but also the parameters for the cohesive zone. A new experimental method was proposed for the calibration of these damage models, utilising the Advanced Button Shear Test. Critical fracture energies are determined based on sub-sequent shear loading, and thus, sub-critical damage evolution at the interface of the test vehicle. This paper describes a FE simulation model used for the verification of the calculated critical fracture energies. Influencing factors are identified using simulation and experiment, and a new calibration procedure is introduced. Furthermore, design adaptations of the shear chisel are given for the optimisation of the experimental procedure.

关键词： Load modeling Adaptation models Delamination Calibration Loading Strain Finite element analysis

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