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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Antonio Pappaterra Bart Vandevelde Majid Nazemi Willem Verleysen Herman Oprins Interuniversity Microelectronics Centre (IMEC) Leuven Belgium Materialise Leuven Belgium

In this paper, a High-Performance direct liquid jet-impingement cooler is presented to guarantee the proper thermal operating conditions in High-Performance processors (up to 300W), enabling level 5 autonomous driving. Computational Fluid-Dynamics (CFD) simulations are performed on the 3D model to reach the final design iteration and show the superior performances. The 3D metal printability of a prototyped liquid-based printed cooler version and the integration to a chip is demonstrated, furthermore experiments are carried out to proof the validity of the CFD modeling methodology and the enhanced potentialities of the solution compared to possible cooling alternatives.

关键词： Micromechanical devices Solid modeling Three-dimensional displays Program processors Cooling Computational modeling Metals

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Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework

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INTEGRATION-THE VLSI JOURNAL 2020年 71卷 56-69页

作者： Garzon, Esteban De Rose, Raffaele Crupi, Felice Trojman, Lionel Finocchio, Giovanni Carpentieri, Mario Lanuzza, Marco Univ Calabria DIMES I-87036 Arcavacata Di Rende Italy Isep LISITE F-75006 Paris France Univ Messina MIFT Dept I-98166 Messina Italy Politecn Bari DEI I-70125 Bari Italy

This paper explores non-volatile cache memories implemented by spin-transfer torque magnetic random access memories (STT-MRAMs) based on state-of-the-art perpendicular magnetic tunnel junctions (MTJs) and FinFETs. The use of double-barrier MTJs with two reference layers (DMTJs) is benchmarked against solutions relying on single-barrier MTJs (SMTJs) at different technology nodes (from 28-nm down to 20-nm). Our study is carried out through a cross-layer simulation platform, starting from the device- up to the system-level. Our results point out that, thanks to the reduced switching currents, DMTJ-based SIT-MRAMs allow decreasing write access time of about 63% as compared to their SMTJ-based counterparts. This is achieved while assuring reduced energy consumption under both write (-42%) and read (-28%) accesses, lower area occupancy (-40%) and smaller leakage power (-25%), at the only cost of worsened read access time. This makes DMTJ-based STT-MRAM a promising candidate to replace conventional semiconductor-based cache memory for the next-generation of low-power microprocessors with on-chip non-volatility.

关键词： Double-barrier magnetic tunnel junction (DMTJ) FinFET STT-MRAM Cache memory Device-to-system simulation framework

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modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices

Modeling Assisted Room Temperature Operation of Atomic Preci...

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International conference on simulation of Semiconductor Processes and Devices (SISPAD)

作者： Gao, Xujiao Tracy, Lisa A. Anderson, Evan M. Campbell, DeAnna M. Ivie, Jeffrey A. Lu, Tzu-Ming Mamaluy, Denis Schmucker, Scott W. Misra, Shashank Sandia Natl Labs Elect Models & Simulat POB 5800 Albuquerque NM 87185 USA Sandia Natl Labs Quantum Phenomena POB 5800 Albuquerque NM 87185 USA Sandia Natl Labs Multiscale Fab Sci & Tech Dev POB 5800 Albuquerque NM 87185 USA Sandia Natl Labs Biol & Chem Sensors POB 5800 Albuquerque NM 87185 USA Sandia Natl Labs Cognit & Emerging Comp POB 5800 Albuquerque NM 87185 USA

ISBN: (纸本)9784863487635

One big challenge of the emerging atomic precision advanced manufacturing (APAM) technology for microelectronics application is to realize APAM devices that operate at room temperature (RT). We demonstrate that semiclassical technology computer aided design (TCAD) device simulation tool can be employed to understand current leakage and improve APAM device design for RT operation. To establish the applicability of semiclassical simulation, we first show that a semiclassical impurity scattering model with the Fermi-Dirac statistics can explain the very low mobility in APAM devices quite well;we also show semiclassical TCAD reproduces measured sheet resistances when proper mobility values are used. We then apply semiclassical TCAD to simulate current leakage in realistic APAM wires. With insights from modeling, we were able to improve device design, fabricate Hall bars, and demonstrate RT operation for the very first time.

关键词： atomic precision advanced manufacturing (APAM) room temperature operation current leakage semiclassical TCAD ionized impurity scattering

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Rheological Analysis and Numerical modeling of Viscoelastic Buffer Receiving Layer for Micro-LED Laser Mass Transfer

Rheological Analysis and Numerical Modeling of Viscoelastic ...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Zehou Li Liangzheng Ji Xin Wang Jun Wang Jing Zhang Fenglian Sun Yang Liu School of Material Science and Chemical Engineering Harbin University of Science and Technology Harbin China Heraeus Electronics Technology Heraeus Materials Technology Shanghai Shanghai China

ISBN: (数字)9798350393002

ISBN: (纸本)9798350393019

This study introduces an innovative numerical model to simulate the dynamic impact of Micro-LED chips on viscoelastic buffer receiving materials during the Laser-Induced Forward Transfer (LIFT) process. We developed a novel rheological computational framework to analyze the behavior of Matrix 50–Thixotropic 07 (M50-T07) and Matrix 50–Thixotropic 13 (M50-T13) under chip impact, validated by LIFT experiments. Rheological characterization showed M50-T13's higher viscosity (3620 Pa·s) at near-zero shear rates compared to M50-T07 (126 Pa·s), with a broader linear viscoelastic range and higher yield stresses (295 Pa vs. 133 Pa). Oscillatory tests indicated M50-T13's superior damping factor, reflecting enhanced energy dissipation. Using ANSYS Fluent, the model simulated material responses, revealing M50-T13's uniform static pressure distribution (peak $7.96 \times 10^{4} \text{Pa}$ ) and controlled strain rates (peak $6.52 \times 10^{6} \mathrm{s}^{-1}$ ), while M50-T07 exhibited rapid deformation (strain rates up to $1.92 \times 10^{6} \mathrm{s}^{-1}$ ). LIFT experiments confirmed simulations: M50-T13 achieved precise chip placement with deviations of $0.32 \mu \mathrm{m}$ and $0.12 \mu \mathrm{m}$ , whereas M50-T07 failed, showing deviations of 65.3 $\mu \mathrm{m}$ and $76.1 \mu \mathrm{m}$ with chip inversion. We propose a new LIFT transfer accuracy metric, actual to target landing area ratio, with M50-T13 reaching 98.49%, surpassing the industry threshold of 88.54%. This validated model optimizes receiving materials for Micro-LED assembly, highlighting viscosity and damping factor as critical to transfer success, and lays a foundation for material design in precision chip transfer applications.

关键词： Viscosity Damping Solvents Accuracy Deformation Rheology Laser modes Numerical models Stress Strain

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Room Frequency Response Equalization Using Modified X-Filtered Adaptive Algorithms

Room Frequency Response Equalization Using Modified X-Filter...

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Siberian conference on Control and Communications (SIBCON)

作者： Victor Djigan Institute for Design Problems in Microelectronics of RAS Moscow Russia

ISBN: (纸本)9781665476294

This article presents a technology of the acoustic frequency response equalization. It is based on the usage of the modified x-filtered adaptive algorithms in the equalizers. Comparing to the traditional x-filtered algorithms, the modified ones allow to accelerate the equalizer convergence if the computationally simple LMS or the NLMS adaptive algorithms based on the gradient search strategy are used for the equalizer weights computation. Besides, the modification allows to use the computationally complex but simultaneously efficient RLS adaptive algorithms in the x-filtered mode because the algorithms cannot be used in the traditional x-filtered mode. The proposed equalizer architectures and the computational procedures of the traditional and modified adaptive filtering algorithms are presented. simulation demonstrates a better performance of the modified algorithms comparing to the traditional ones in the following terms: the equalized frequency response ripple value, the proximity of the PSD curves of the undistorted speech signal and the signal passed through the equalizer and acoustic medium, the initial duration of the transient response of the error signal and the response steady-state value.

关键词： Transient response Gradient methods Computational modeling Computer architecture Filtering algorithms Frequency response Acoustics

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Thermal modelling, characterization and optimization of 2.5D heterogeneous integrated platform for RF front end

Thermal modelling, characterization and optimization of 2.5D...

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Electronics Packaging Technology conference (EPTC)

作者： Haoran Chen Teck Guan Lim Gongyue Tang System in Package Institute of Microelectronics A*STAR Singapore Singapore

ISBN: (纸本)9798350398861

This paper studies the thermal characteristics of a compact 2.5D heterogeneous integrated platform by numerical simulation. The platform contains a silicon interposer carrying high-density power amplifiers made of gallium nitride on silicon carbide (GaN-on-SiC) and temperature sensitive passive filter dies. Comparing with traditional wire bonding method, the flip chip method suspended by metal stub enjoys greater benefits on RF performance. However, thermal issue becomes more challenging in this configuration due to the improper thermal transferring path. This work numerically studies the metal casing as a cooling solution and explores the potential capabilities in 2.5D heterogeneous integrated platform based on a full-scale 3D finite element model. Temperature distributions across the package in different conditions are presented to reveal the effect of the casing. And the parametric study results guide the thermal design of such casing in practice. The information in this paper could be helpful in the thermal design of 2.5D heterogeneous integrated platform for RF front end.

关键词： Radio frequency Solid modeling Three-dimensional displays Cooling Parametric study Wires Metals

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Current Threshold Elements of Cyclic Shift for Constructing Specialized IP-Memory Modules in Automation and Systems for Tolerance Control of Analog Signals

Current Threshold Elements of Cyclic Shift for Constructing ...

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International conference for Young Scientists on Issues of Physics and Technology in Science, Power Industry and Medicine 2019, IPTSPIM 2019

作者： Butyrlagin, N.V. Chernov, N.I. Prokopenko, N.N. Ya Yugai, V. Department of Information System and Radio Engineering Don State Technical University Gagarin Sq. 1 Rostov-on-Don344000 Russia Institute for Design Problems in Microelectronics of Russian Academy of Sciences Institute for Design Problems in Microelectronics Ras Sovetskaya St. 3 Zelenograd124681 Russia

The current threshold elements of direct and reverse cyclic shift are developed. This logical elements are recommended as memory elements for the construction of relevant controllers and devices for tolerance control of analog signals, which used in diagnosis of complex electronic equipment. The mathematical apparatus used in the design is a linear algebra. The basic equations and results of computer modeling of the developed cyclic shift schemes are presented. Computer simulation was carried out in the Cadence environment on models of field-effect transistors XB06. © Published under licence by IOP Publishing Ltd.

关键词： Linear algebra

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A 65-nm CMOS 0.4 V 49.6 nW Voltage Monitor for Small-Form-Factor Biomedical IoT Applications

A 65-nm CMOS 0.4 V 49.6 nW Voltage Monitor for Small-Form-Fa...

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Asia Pacific conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)

作者： Xinyang Yu Guowei Chen Yue Wang Xujiaming Chen Kiichi Niitsu Nagoya University Japan JST/PRESTO Saitama Japan

ISBN: (纸本)9781665439381

This paper presents a low-power voltage monitor for small-form-factor, low-sample-rate biomedical Internet of Things (IoT) applications aiming to convert the analog output voltage 0–0.2 V of a biosensor into digital code. This design consists of 3 oscillators and a periphery logic circuit. A reference oscillator that can provide stable output frequency even supply voltage floats range of 0.35–0.45 V. Two sensitive oscillators which the output frequency will change rapidly due to the output voltage from biosensors. A resistive input stage is used in each sensitive oscillator to improve the linearity of the output. The SPICE simulation performed in 65-nm CMOS technology shows that the nonlinearity error is within −1.56 mV/+1.19 mV when the input voltage is 0–0.2 V, much lower than previous works. The power consumption of this design is 49.6 nW when the voltage supply is 0.4 V.

关键词： Semiconductor device modeling Power demand Voltage SPICE microelectronics Internet of Things Biosensors

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simulation Tools for E-Learning in microelectronics and Nanoelectronics at the University 13th

Simulation Tools for E-Learning in Microelectronics and Nano...

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13th International conference on Modern Information Technology and IT Education, SITITO 2018

作者： Demenkova, Tatyana Indrishenok, Valery Pevtsov, Evgeny MIREA - Russian Technological University Vernadsky Prospekt 78 Moscow119454 Russia

ISBN: (纸本)9783030468941

In work results of researches in the area of simulation of electrical characteristics of the AlGaN/GaN field-effect transistor are provided. The considerable difference of transport processes in case of the strong and feeble electrical polarization is shown. The role of capture of centers in volume of a buffer layer GaN is analyzed and it is shown that deep interruptions can influence considerably on distribution of electrostatic potential and density of electrons in a buffer layer. In case of high concentration of interruptions there is a sharp lowering of density of the free electrons with increase of distance from the channel, the current density in the depth of a buffer layer decreases. The received scientific results have allowed to use the scientific software for disciplines on the automated design in electronics, automation of an experiment and for design and modeling micro and nanosystems within the direction of microelectronics and nanoelectronics for training of masters at the university. Software systems are designed for mathematical simulation of semiconductor manufacturing processes, their electrical, optical, thermal, and other characteristics. A significant advantage is the possibility of establishing a relationship between the devices characteristics and the manufacturing technology and design parameters, without involving costly experimental studies, based on their physical implementation. The software is used to develop devices and elements of integrated circuits, to study device properties in various operating modes when exposed to various external factors. © Springer Nature Switzerland AG 2020.

关键词： Computer software

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An Investigation on the Analysis of Graphene-based Counter Electrode with MATLAB simulation for Dye-Sensitized Solar Cells

An Investigation on the Analysis of Graphene-based Counter E...

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microelectronics, Signals & Systems (ICMSS), International conference on

作者： Feba Job Samuel Mathew Stephanie Narbey Toby Meyer Mar Thoma College Thiruvalla Kerala India Solaronix SA Rue de I’ Ouriette 129 AubonneSwitzerland

ISBN: (纸本)9781665448864

The ever-escalating demands for the clean energy and its environment concerns are widely exploring research area in the development of energy conversion devices. There are copious sustainable energy resources available in nature, among them solar energy is considered to be promising and potential energy source due to its inexhaustible and eco-friendly features. Among the photovoltaic devices; Dye Sensitized Solar Cells (DSSCs) gained an extensive development and remarkable attention due to its simple design and fabrication, eco-friendly properties, etc. In the design of DSSC devices, the counter electrode (CE) plays an important role in catalytic activity so, a worthwhile effort is necessary to seek for an active and inexpensive CE material. However, most of the CE materials have been discovered by using ‘trial and error’ method. In this research work, we selected graphene as CE material for analyzing the proposed DSSC performance and alternatively, the experimental data is computed with the help of user friendly simulation tool. Here, the overall proposed DSSC performance demonstrates that the graphene based CE is proficient of being considered for DSSCs during ambient light conditions and that enables to provide progress in the field of indoor light harvesting applications. Meanwhile, for the simulation process we opted MATLAB software package which facilitates to provide a significant path for the prospects and development of photovoltaic technology.

关键词： Electrodes Performance evaluation Analytical models Software packages Photovoltaic cells Computational modeling Graphene

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