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22nd European microelectronics and Packaging conference and Exhibition (EMPC)

作者： Rovitto, M. Cannavacciuolo, A. STMicroelectronics Via C Olivetti 2 I-20864 Agrate Brianza MB Italy

ISBN: (纸本)9780956808660

The process of microchip encapsulation by epoxy resin injection is simulated by employing moldflow modeling. In this work, the use of modeling allows to reproduce the unbalanced flow behavior of the resin within the mold cavity during the filling stage which leads to the formation of voids in the molded package. simulation results are compared to experimental findings, in which the molding process is interrupted at designed points in time. Comparison shows good agreement between numerical outputs and experimental data and demonstrates the effectiveness of the model. After modeling is validated, the numerical methodology is applied to optimized package design in order to minimize the risk of issues caused by the filling stage. As a result, geometric variations show a significant effect on filling front progression avoiding the generation of structural defects during molding process.

关键词： package molding resin moldflow void weld line

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A Compact Model for Relaxation Effect in Analog RRAM for Computation-in-Memory System design and Benchmark

A Compact Model for Relaxation Effect in Analog RRAM for Com...

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IEEE Electron Devices Technology and Manufacturing conference (EDTM)

作者： Yuyi Liu Bin Gao Feng Xu Wenqiang Zhang Yue Xi Jianshi Tang He Qian Institute for Microelectronics Beijing Innovation Center for Future Chips (ICFC) Tsinghua University Beijing China

ISBN: (纸本)9781728181769;9781728181776

Analog RRAM is considered as a promising emerging device for the future computation-in-memory system. However, the relaxation effect shows significant impact on system performance. It causes high accuracy loss for inference application. In this work, we have statistically studied the relaxation effect of analog RRAM. Based on the statistical measurement results, a compact model for relaxation is established. The simulation results can match experiment results well for different conductance levels at different relaxation time. Furthermore, a device-level to system-level simulation framework is proposed. The simulation framework supports both inference and on-chip training, and the compact relaxation model is embedded to the framework to benchmark the CIM system. Finally, a suppression method is further provided for relaxation effect from system level.

关键词： Training Computational modeling System performance simulation Random access memory Benchmark testing Common Information Model (computing)

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design of Integrated Magnetic Transformer for High Frequency LLC Converter 4

Design of Integrated Magnetic Transformer for High Frequency...

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4th International conference on HVDC, HVDC 2020

作者： Wang, Jing Xu, Zhifei Wang, Xin Zhao, Yuming Liu, Guowei Tian, Ruoning Jing, Long Shenzhen Power Supply Bureau Co. Ltd Shenzhen China School of Electrical Engineering Beijing Jiaotong University Beijing China Xi'an Microelectronics Technology Institute Shaanxi China

ISBN: (纸本)9781728175935

With the rapid development of modern industry and the emphasis on cost saving, high efficiency, high power density, high reliability of isolated switching power supplies demand more and more. In order to continuously improve the efficiency and power density of the power module, high-frequency and miniaturization has become the development trend of switching power supply. As the volume and weight of magnetic components take up a large proportion in the whole DC/DC power supply module, it is very important to reduce the volume and loss of planar transformer and improve the efficiency at the same time. In this paper, through ANSYS Maxwell finite element simulation, high frequency electromagnetic field modeling of different transformer design schemes were carried out, and the simulation results were extracted and analyzed to obtain an integrated magnetic transformer with low loss, small volume, high efficiency and good electromagnetic compatibility. © 2020 IEEE.

关键词： Efficiency

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design of Parallel Rank-Order Filtering System Based on Neural Circuits of Discrete-Time

Design of Parallel Rank-Order Filtering System Based on Neur...

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International conference on CAD Systems in microelectronics (CADSM)

作者： Pavlo Tymoshchuk Lviv Polytechnic National University Lviv Ukraine

ISBN: (数字)9781665438940

ISBN: (纸本)9781665446051

A rank-order parallel filtering (ROF) system is presented. It is modeled by system of difference equations. There are designed functional block-schemes of the system. In contrast to other analogs, the system has arbitrary high resolution of inputs, linear computational complexity and it can process unknown finite value inputs located in any known confined region. The ROF has moderate computational and hardware implementation complexity. Moreover, it does not need readjusting and appropriate control circuits. Numerical simulations showing performance of the ROF are given.

关键词： Solid modeling Filtering Neural circuits Numerical simulation Hardware Software Finite element analysis

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A High Coupling Interdigital Coupler Based on Substrate Integrated Coaxial Line 9

A High Coupling Interdigital Coupler Based on Substrate Inte...

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9th IEEE Asia-Pacific conference on Antennas and Propagation, APCAP 2020

作者： Zhou, Liang Xu, Feng Nanjing University of Posts and Telecommunications College of Electronic and Optical Engineering College of Microelectronics Nanjing210000 China

ISBN: (纸本)9781728198057

In this paper, a high coupling interdigital coupler based on substrate integrated coaxial line SICL technology is proposed. The design of coupler is based on SICL technology, so it has many advantages, such as shielding structure to keep it away from lateral leakage, crosstalk or unwanted parallel board mode, light weight, low cost, easy to integrate with planar circuit. The high coupling degree of the coupler is achieved by adopting interdigital coupling line structure. Through modeling and simulation in HFSS, it can be seen that in the frequency band of 2.8-3.2GHz, S21 and S31 are-3.1±0.9dB, return loss is better than-15dB, isolation is better than-16dB. Inaddition, a phase difference of 90 ± 3° is generated between the through end and the coupling end. © 2020 IEEE.

关键词： Microstrip lines

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Studies on Thermo-Mechanical Reliability of High Performance Vehicle Computers Based on a Mock-up System

Studies on Thermo-Mechanical Reliability of High Performance...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Rainer Dudek Ralf Döring Sven Rzepka Przemyslaw Gromala Jens Schindele Bart Vandevelde Fraunhofer ENAS Chemnitz Germany Robert Bosch GmbH AE/ECU3 Reutlingen Germany IMEC Leuven Belgium

The use of electronics for purpose of autonomous driving requires high performance vehicle computer (HPVC) systems usable in harsh environments. A variety of challenging issues have to be considered from different perspectives. The paper focuses on the perspective of reliability and functional safety. To physically simulate and to analyze the thermal and the thermo-mechanical behaviors of the actual processors in different operation modes, a mockup system is designed, which has initially been modelled by virtual means. The thermo-mechanical design methodology is essentially based on FE parametric studies, using a full model including 1^st and 2^nd level interconnects as well as including solder creep and other materials non-linearity.. To gain an overview on overall influences of materials parameters choice, virtual DOE was made at the beginning. Model complexity and size limits virtual DOE, which was performed with reduced geometric details and elastic material modeling. Comparison on material models comprise visco-plastic models for SAC305 and visco-elastic models for polymers. To reach high T-cycle reliability is a challenge for the mock-up system. The effects were analyzed for both first level and second level interconnects. It is shown that first level bumps fatigue or underfill 1 delamination are highest failure risks, which can be basically affected by choice of the assembly technology, i.e. underfill/undermold and soldermask choices. simulation inherent issued like the use of a combined secondary/primary creep model vs. an Anand's model are compared and good agreement has been observed.

关键词： Micromechanical devices Program processors Parametric study Computational modeling Creep Thermomechanical processes Computer performance

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Analysis, modeling and design of a CMOS Super-Regenerative Receiver for implanted medical devices under square and sinusoidal quench signals

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INTEGRATION-THE VLSI JOURNAL 2019年 67卷 1-7页

作者： Pekcokguler, Naci Dundar, Gunhan Dehollain, Catherine Bogazici Univ Dept Elect & Elect Engn TR-34342 Istanbul Turkey Ecole Polytech Fed Lausanne RFIC Grp CH-1015 Lausanne Switzerland

Medical implant devices have found widespread application in recent years. The Super-Regenerative Receiver has been one preferred architecture due to its power advantage over other architectures. We present a detailed analysis of the circuits and their equivalent models to be used in system level design of a Super-Regenerative Receiver in this paper. The design procedure is also demonstrated with a receiver design example. designs were carried out in UMC 180 nm process with a center frequency of 416 MHz for MedRadio band. Errors between the simulation results of the proposed model and actual circuits are less than 1.6% for LNA characteristics and 7% for receiver output amplitude. 10 Mbps data rate was achieved with 432 pJ/bit energy consumption over 1.8 V power supply. The study is concluded with the simulation results of the circuits and the equivalent models.

关键词： Super-regenerative receiver SRR Medical implant Analytic model Equivalent circuit model Receiver design

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Modelling, simulations and Performance Analysis of MEMS vibrating Gyroscope in Coventor MEMS plus Environment 20

Modelling, Simulations and Performance Analysis of MEMS vibr...

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20th International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems (EuroSimE)

作者： Nazdrowicz, Jacek Napieralski, Andrzej Lodz Univ Technol Wolczanska St 221-223 PL-90924 Lodz Poland

ISBN: (纸本)9781538680407

In the paper authors present heterogeneous environment for modeling and simulations created with use Coventor MEMS+ and Matlab/SIMULINK software. The big advantage of this solution is possibility to merge with Cadence software what gives in effect big solution for modeling, simulation and design MEMS structure with ROIC (Read Out Integrated Circuit) for further fabrication. Authors present capabilities of implementation and some results obtained from simulations performed in this environment. There were performed for simple model of MEMS vibratory gyroscope with specific box beam springs on those inertial mass is suspended.

关键词： Micromechanical devices Gyroscopes Solid modeling Mathematical model Springs Integrated circuit modeling Software

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PLL Real Number modeling in SystemVerilog 16

PLL Real Number Modeling in SystemVerilog

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16th International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 15th conference on PhD Research in microelectronics and Electronics (PRIME)

作者： Louis, Mina Dessouky, Mohamed Salem, Ashraf Mentor Cairo Egypt

ISBN: (纸本)9781728112015

This paper discusses different techniques for the development of event-driven, analog functional models based on SystemVerilog for system-level verification. It leverages the recent introduction of additional real number capabilities in SystemVerilog to represent analog signals, known by Real Number modeling (RNM). In addition to the introduction of composite user-defined net types that can carry multiple information, e.g. voltage, current, impedance, .... A Phase Locked Loop (PLL) model is considered as a vehicle to demonstrate the different proposed techniques. It is shown that using a pure SystemVerilog model, it is possible to achieve a comparable accuracy to Spice transistor-level simulation with a 27x simulation speedup.

关键词： RNM Real Number modeling SystemVerilog z-transform PLL Lookup Table nettypes

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simulation Methodology for Active Semiconductor Devices in MEMS 20

Simulation Methodology for Active Semiconductor Devices in M...

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20th International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems (EuroSimE)

作者： Schwarz, Mike Senz, Volkmar Dannenberg, Arne Feiler, Wolfgang Heuck, Friedjof Friedrich, Thomas Sorger, Christian Franz, Jochen Robert Bosch GmbH Gerlingen Germany

ISBN: (纸本)9781538680407

Nowadays, the demand for a MEMS Development/design Kit (MDK) is even more in the focus than ever. In order to achieve a high quality and cost effectiveness in automotive and consumer applications, an advanced design flow for the MEMS (Micro Electro Mechanical Systems) element is required to fulfill these criteria. In this paper, a methodology and design flow is presented to ensure an integration of active semiconductor devices and components into micromechanical sensors. The methodology considers cross coupling effects and limitations of the electrical active device and mechanical MEMS. An example with mechanical constraints is presented and discussed and finally the results of the simulation methodology are compared with fabricated devices in terms of accuracy and capability of the design flow.

关键词： Micromechanical devices Semiconductor diodes Semiconductor process modeling Sensors Analytical models Temperature measurement

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