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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"

共 1419 条记录，以下是271-280 订阅

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simulation Features of Electrically Controlled Optical Systems Based on Polymer Structure-Liquid Crystal 15

Simulation Features of Electrically Controlled Optical Syste...

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15th IEEE International conference on the Experience of designing and Application of CAD Systems (CADSM)

作者： Fechan, Andriy Bashtyk, Yuriy Kotsun, Volodymyr Senyk, Andriy Lviv Polytech Natl Univ Software Dept Lvov Ukraine Lviv Polytech Natl Univ Elect Devices Dept Lvov Ukraine European Univ Lviv Affiliate Math & Comp Sci Dept Lvov Ukraine Lviv Polytech Natl Univ Dept Appl Math Lvov Ukraine

this article shows the results of computer simulation of lens with variable focus. The basis of the lenses is a polymer with a complex surface (in this case - Fresnel zones) covered with a thin layer of liquid crystal.

ISBN: (纸本)9781728100531

关键词： liquid crystal tunable lens polymer - liquid crystal structure optical modeling

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Computer simulation of the partitioning by mutually orthogonal lines 15

Computer simulation of the partitioning by mutually orthogon...

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15th IEEE International conference on the Experience of designing and Application of CAD Systems (CADSM)

作者： Komyak, Valentina Sobol, Oleksandr Kartashov, Oleksii Yakovleva, Iryna Komyak, Vladimir Danilin, Alexander Lyashevskaya, Olena Natl Univ Civil Def Ukraine Dept Phys & Math Disciplines Kharkiv Ukraine Natl Univ Civil Def Ukraine Dept Management & Org Field Civil Def Kharkiv Ukraine Natl Aerosp Univ Kharkiv Aviat Inst Dept Math Modeling & Artificial Intelligence Kharkiv Ukraine Kharkiv Natl Univ Municipal Econ Dept Appl Math & Informat Technol Kharkiv Ukraine Natl Univ Civil Def Ukraine Dept Prevent Act & Monitoring Kharkiv Ukraine

ISBN: (纸本)9781728100531

The partitioning problem of areas into regions along mutually orthogonal lines is considered. A mathematical model of the problem has been proposed, taking into account economic, agrotechnical and fire prevention restrictions. A method has been developed for obtaining a local-optimal partition of a given region based on the construction of two sequences of decision trees. Computer simulation of practical problem of partitioning sowing areas has been carried out and the numerical results of its solution were presented.

关键词： partitioning mathematical modeling solution tree computer simulation sowing area

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Comparison of the thermal-mechanical behavior of a soldered stack influenced by the choice of the solder 20

Comparison of the thermal-mechanical behavior of a soldered ...

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20th International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems (EuroSimE)

作者： Vargas, Ramiro S. C. Gonda, Viktor Obuda Univ Doctoral Sch Mat Sci & Technol Becsi Ut 96b H-1034 Budapest Hungary Obuda Univ Banki Fac Mech Engn Nepszinhaz U 8 H-1081 Budapest Hungary

ISBN: (纸本)9781538680407

Thermal cycling causes deformations in electronic packaging structures, which may result in severe loads of solder connections. Prediction of stresses and strains in the solder connections is a critical step in design for the reliability of interconnected parts. Leaded soldering materials have been broadly used for electronic interconnects in the past due to their favorable electric, mechanical and thermal properties. Presently many different lead-free solder materials are applied as a suitable replacement for the hazardous eutectic SnPb solder. Lead-free solders are frequently Sn-based alloys with silver (Ag) and copper (Cu), resulting in a higher melting temperature. In an electronic package, the thermal-mechanical integrity of a soldered structure is of high importance for the reliability of the assembly. Hence, its mechanical properties and consequently mechanical behavior should be analyzed to probe the reliability of unleaded solders. In this work, a fundamental finite element model was created for an electronic assembly, on which cyclic thermal and mechanical load was applied. For the interconnecting solder, three types: Sn-3.5Ag, SAC305, and SAC387 were employed in the different models and the integrity of the package were evaluated.

关键词： Creep Mathematical model Strain Load modeling Lead Stress

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Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport modeling

Computation of Torques in Magnetic Tunnel Junctions through ...

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International conference on simulation of Semiconductor Processes and Devices (SISPAD)

作者： Simone Fiorentini Johannes Ender Mohamed Mohamedou Roberto Orio Siegfried Selberherr Wolfgang Goes Viktor Sverdlov Christian Doppler Laboratory for NovoMemLog at the Institute for Microelectronics TU Wien Vienna Austria Institute for Microelectronics TU Wien Vienna Austria Silvaco Europe Ltd Cambridge United Kingdom

ISBN: (数字)9784863487635

ISBN: (纸本)9781728173542

Spin-transfer torque based devices are among the most promising candidates for emerging nonvolatile memory. Reliable simulation tools can help understand and improve the design of such devices. In this paper, we extend the drift-diffusion approach for coupled spin and charge transport, commonly applied to determine the torque in metallic valves, to the case of magnetic tunnel junctions, which constitute the cell of modern spin-transfer torque memories. We demonstrate that, by introducing a magnetization dependent conductivity and properly choosing the spin diffusion coefficient in the tunnel barrier, the expected behavior of both, the electric current and the spin accumulation, is properly reproduced. The spin torque values' dependence on the system parameters is investigated. As a unique set of equations is used for the entire memory cell, this constitutes the basis of an efficient finite element based approach to rigorously describe the magnetization dynamics in emerging spin-transfer torque memories.

关键词： Torque Magnetization Memory management Semiconductor process modeling Mathematical model Junctions Magnetic tunneling

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Single Event Transient Pulses Fault Injection Model based on LET for Circuit-Level simulation

Single Event Transient Pulses Fault Injection Model based on...

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International conference on Solid-State and Integrated Circuit Technology

作者： Chang-Qing Xu Yi Liu Xiao-Dong Weng Zhi-Bing Li Yin-Tang Yang School of Microelectronics Xidian University Xi'an China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

The dependence of 0.13μm NMOS single event transient on linear energy transfer (LET) is studied and integrated into a single event transient (SET) pulses fault injection model. A modified double exponential function with four parameters that are related to LET is used to fit the single event transient pulsed current. By translating into the LET-dependent model, it can predict the charge collection without Technology Computer Aided design (TCAD) simulation when LET is changed. The SRAM unit is built using the proposed single event transient pulses fault injection model into the sensitive node, proving the practicability and reasonableness of the proposed fault injection model for circuit-level single-event effect (SEE) simulation.

关键词： Integrated circuit modeling Semiconductor process modeling Semiconductor device modeling Circuit faults Single event transients Random access memory Numerical models

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2019 20th International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems, EuroSimE 2019

2019 20th International Conference on Thermal, Mechanical an...

引用

20th International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems, EuroSimE 2019

ISBN: (纸本)9781538680407

The proceedings contain 78 papers. The topics discussed include: design for package miniaturization for a mems pressure sensor;transgranular crack propagation in thermal cycling of SnAgCu solder joints;effect of nonlinear interactions of electronic assemblies in response to multiaxial vibration;modeling and simulation of glass frit bonding of silicon wafers;analysis of self heating effect in vertical-channel field effect transistor;improved QFN thermal cycling reliability using low melting temperature SnBi based solder paste LMPA-Q;numerical prediction of failure in SnAgCu solder under shear and tensile-dominant cyclic loading;coupled electro-mechanical simulation of capacitive MEMS accelerometer for determining optimal parameters of readout circuit;air-coupled array of pmuts at 100 kHz with PZT active layer: multiphysics model and experiments;and development of a modular test setup for reliability testing under harsh environment conditions.

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design and Implementation of an Over Temperature Protection Circuit

Design and Implementation of an Over Temperature Protection ...

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International conference on Information Systems and Computer Aided Education (ICISCAE)

作者： Yonggang Wang Zhimei Zhou Yong Wan Smart Shine Microelectronics Technology CO. Ltd Beijing China

ISBN: (数字)9781728183046

ISBN: (纸本)9781728194608

Based on the theory of thermal characteristic of diode and use reference voltage compare with diode temperature to realize a thermal shutdown circuit within thermal hysteresis. Bandgap circuit was used to provide reference voltage. Detailed theory derivation and design method were gave by this paper, the corresponding solution of the difficult part was also gave. By the comparison of simulation and test result we can know that this kind of thermal shutdown circuit can realize accurate thermal shutdown and hysteresis.

关键词： Temperature measurement Temperature Photonic band gap Computational modeling Integrated circuit modeling Hysteresis Information systems

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design for Void Free Transfer Molding SiP 15

Design for Void Free Transfer Molding SiP

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15th International Microsystems, Packaging, Assembly and Circuits Technology conference (IMPACT)

作者： Huang, Bing-Yuan Hu, Ian Chen, JimDL Tarng, David Hung, C. P. Adv Semicond Engn ASE Inc Nantze Export Proc Zone 26 Chin 3rd Rd Kaohsiung 811 Taiwan

ISBN: (数字)9781728198514

ISBN: (纸本)9781728198514

The molded underfill (MUF) process for system-in-package (SiP) assembly has been widely used for recent years. In the past, the main structure of the MUF was molded flip chip chip scale package (MFCCSP). Later, as the number of components increased, the mold flow became complicated, and the void issue increased, it evolved into complicated SiP. Nowadays, the metal lid SiP module is gradually moving towards the MUF SiP package market. Transfer molding for SiP is widely used in product packaging nowadays, such as mobile watch, wifi module and power management integrated circuit (PMIC) for mobile phone and portable devices, etc. The microelectronics products of SiP with more increasing challenges are faced to assure molding capability with rapid advances in flip chip technology such as surface mount technology (SMT) density, component counts become larger and number of bumps increase, especially when transfer molding process is used. There is one important challenge that faced severe air void entrapment under the die (bumps region). At present, there are mainly the following reasons leading to void issues: 1. mold thickness is too thick, 2. bump counts increase or smaller bump height, 3. mold gap smaller, 4. viscosity of epoxy molding compound (EMC) is too high. Generally, the experiments involving a lot of design of experiment (DoE) matrixes which spend a lot of time to solve air void issue. As above reasons, the mold flow simulation can be used to apply molding parameters to find out optimum solutions for air void risk free of SiP with mold thickness and mold gap design, which can reduce development cycle time before mass production. In addition, the trend of the impact on void will be discussed in the acceptable range of EMC material properties and cavity vacuum value. At present, there are several key factors that affect void issues, including component/mold volume ratio, main component size, space in end of row, side space, mold thickness and bump layout, etc. We

关键词： Viscosity Electromagnetic compatibility Transfer molding Filling Curing Temperature measurement Integrated circuit modeling

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Parameter Extraction for a Simplified EKV-model in a 28nm FDSOI Technology

Parameter Extraction for a Simplified EKV-model in a 28nm FD...

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International conference on Mixed design of Integrated Circuits and Systems (MIXDES)

作者： Konstantin Bajer Steffen Paul Dagmar Peters-Drolshagen Institute of Electrodynamics and Microelectronics (ITEM.me) University of Bremen Bremen Germany

ISBN: (数字)9788363578183

ISBN: (纸本)9781728197814

The gm/ID methodology is applicable for the circuit design in advanced nanometer technologies. This work proposes a systematic parameter extraction process for a simplified EKV-model with only three model parameters which is applicable to all CMOS technologies. The extraction procedure relies only on the drain current for a sweep of the gate voltage without the need of additional extraction simulations in SPICE or parameters from the model card. Therefore, it is independent from the applied technology or the compact model of the SPICE simulation. For devices with short channel lengths, three variations of the EKV model were evaluated which consider velocity saturation. The resulting model provides good results compared to the SPICE simulation over the complete operation region of the technology for long and short channel devices while keeping simplicity for fast tool-based circuit design procedures and hand calculations.

关键词： Integrated circuit modeling SPICE Channel models Parameter extraction Semiconductor device modeling Mathematical model

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Electromigration Model for Platinum Hotplates

Electromigration Model for Platinum Hotplates

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International conference on simulation of Semiconductor Processes and Devices (SISPAD)

作者： Lado Filipovic Institute for Microelectronics Technische Universität Wien Vienna Austria

ISBN: (数字)9784863487635

ISBN: (纸本)9781728173542

Microheaters are frequently applied in the design of semiconductor metal oxide gas sensors in order to heat the sensing layer and induce the surface chemical reactions which promote molecular adsorption. One of the most common materials used for the microheater layer is platinum. In this manuscript, a model for electro-migration is developed and implemented to study vacancy dynamics and the thereby-induced stress in platinum-based microheaters for gas sensor applications. The model is then applied to study the impact of the individual components which contribute to vacancy transport, including electro-migration, thermo-migration, and stress-migration. We find that these structures have very high thermal gradients, making the impact of thermo-migration component higher than the electro-migration component in the early stages of vacancy transport, unlike in copper-based interconnects. Therefore, improving the temperature uniformity of the microheater design should lead to a longer operating time before failure.

关键词： Semiconductor device modeling Heuristic algorithms Platinum Semiconductor process modeling Acceleration Gas detectors Stress

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