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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Mohamed Boutaleb Fabrice Roqueta Fabrice Moreau Yann Brenet Laurent Barreau Analog Power & Discrete MEMS and Sensors Group Discrete & Filter Division (DFD) Quality Manufacturing & Technology BEM&T R&D STMicroelectronics Tours France

ISBN: (数字)9798350393002

ISBN: (纸本)9798350393019

In the context of the expanding automotive market, power modules have emerged as key components, driving the need for compact devices, enhanced thermal management, and higher power density. These modules, which offer considerable benefits over discrete components, are subjected to thermomechanical stresses throughout their life cycle, primarily due to active power cycling and passive temperature cycling, which can induce various failure modes. This paper focuses on the reliability of power modules under the specific conditions of power cycling. The effect of varying wire number and diameter on the thermomechanical response and reliability of power modules is assessed through a combination of experimental reliability tests and finite element method simulations. It has been demonstrated that the robustness of power modules, in terms of the number of cycles before failure, is significantly improved by a greater number of wires with lower diameter. This comprehensive analysis of bond wire reliability under power cycling conditions offers valuable insights into their failure mechanisms, contributing to the enhancement of power module design and reliability. This work is particularly pertinent as the industry moves towards increased reliance on power modules, especially for EVs, where power electronics reliability is paramount.

关键词： Thermomechanical processes Multichip modules Reliability engineering Robustness Finite element analysis Wire Reliability Plastics Strain Load modeling

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Physics-Informed Machine Learning-Based Methodology for Plated Through Holes Lifetime Estimation in Printed Circuit Boards

Physics-Informed Machine Learning-Based Methodology for Plat...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Marco Sperti Chinmay Nawghane Bart Vandevelde Nicolas Lammens Mathias Verbeke imec Leuven Belgium Siemens Industry Software nv Strategy & Innovation Leuven Belgium Department of Computer Science KU Leuven Belgium Flanders Make@KU Leuven Belgium

ISBN: (数字)9798350393002

ISBN: (纸本)9798350393019

The increasing demand for reliable electronics underscores the need for predictive tools to estimate component lifetimes and mitigate key failure risks and associated costs. This study focuses on Plated Through Holes (PTHs) in Printed Circuit Boards, which are critical to system reliability but prone to failures under standard thermal cycling due to strain from coefficient of thermal expansion mismatches. A physics-informed machine learning-based methodology is proposed, integrating data from Finite Element Method simulations and experimental data from degradation tests. Two machine learning models are combined to estimate the Remaining Useful Life of PTHs: a feedforward neural network (FFNN) able to predict the number of cycles to failure of a given structure and trained on a design of Experiment dataset with geometric and material parameters, and a Long Short-Term Memory (LSTM) network to predict the temporal degradation trend measured by real sensors on the board. The combination of these two models allows the implementation of a Physics-informed Neural Network where the physics learned based on the FFNN is used as a physical constraint in the cost function of the LSTM to guide the prediction of the degradation.

关键词： Degradation Thermal expansion Printed circuits Predictive models Sensors Finite element analysis Integrated circuit modeling Integrated circuit reliability Long short term memory Strain

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A New Holistic Approach for Prosthesis Polymeric Aortic Valve design

A New Holistic Approach for Prosthesis Polymeric Aortic Valv...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Müge Yaren Yaşartürk Emirhan Yığıt Reza Daryanı Emre Cenk Ersan Mustafa Serdar Çelebı Dept. of Computational Science and Engineering Istanbul Technical University Istanbul Turkey Dept. of Computer Engineering Istanbul Beykent University Istanbul Turkey Dept. of Mechanical Engineering Istanbul Technical University Istanbul Turkiye Dept. of Computational Science and Engineering Istanbul Technical University Istanbul Turkiye

ISBN: (数字)9798350393002

ISBN: (纸本)9798350393019

Aortic valve insufficiency is a life-threatening condition. The primary treatment approach is the replacement of the native valve with prosthetic valves in severe cases. However, current prostheses often lead to complications such as durability issues, the need for lifelong anticoagulation medicine usage, and tissue rejection. As a result, multiple surgical interventions are frequently required for prosthesis replacement. This study highlights the importance of a comprehensive prosthetic design process by encompassing patient-specific design, careful material selection, and advanced three-dimensional fabrication, which is essential for addressing these challenges. To enhance the mechanical durability of polymeric heart valve prostheses, we introduce a framework that combines fluid-structure interaction (FSI) simulations to obtain hemodynamic properties prior to advanced structural analyses. While our methodology is based on determining hemodynamic loads with FSI simulations and transferring them to an additional finite element model (FEM) that captures the detailed mechanical properties of valve tissue, the results presented in this study are obtained using more traditional loading conditions in FEM to ensure the validity and comparability of our findings. These results serve as a foundation for future studies incorporating full FSI-driven structural simulations. These analyses lead to the creation of a geometrically optimized design, fabricated with a digital light processing-based (DLP) method. Subsequently, mechanical testing was conducted to evaluate the effects of this manufacturing technique on material behavior, producing more realistic material model coefficients for use in numerical simulations. Consequently, different ratios of material rigidity in fiber-reinforced models are investigated with FEM analysis. An important novelty of this approach is to be able to detect stress accumulations by taking hemodynamic indices into account to optimize the stress di

关键词： Analytical models Valves Finite element analysis Hemodynamics Numerical models Polymers Heart valves Stress Prosthetics Load modeling

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Rheological Analysis and Numerical modeling of Viscoelastic Buffer Receiving Layer for Micro-LED Laser Mass Transfer

Rheological Analysis and Numerical Modeling of Viscoelastic ...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Zehou Li Liangzheng Ji Xin Wang Jun Wang Jing Zhang Fenglian Sun Yang Liu School of Material Science and Chemical Engineering Harbin University of Science and Technology Harbin China Heraeus Electronics Technology Heraeus Materials Technology Shanghai Shanghai China

ISBN: (数字)9798350393002

ISBN: (纸本)9798350393019

This study introduces an innovative numerical model to simulate the dynamic impact of Micro-LED chips on viscoelastic buffer receiving materials during the Laser-Induced Forward Transfer (LIFT) process. We developed a novel rheological computational framework to analyze the behavior of Matrix 50–Thixotropic 07 (M50-T07) and Matrix 50–Thixotropic 13 (M50-T13) under chip impact, validated by LIFT experiments. Rheological characterization showed M50-T13's higher viscosity (3620 Pa·s) at near-zero shear rates compared to M50-T07 (126 Pa·s), with a broader linear viscoelastic range and higher yield stresses (295 Pa vs. 133 Pa). Oscillatory tests indicated M50-T13's superior damping factor, reflecting enhanced energy dissipation. Using ANSYS Fluent, the model simulated material responses, revealing M50-T13's uniform static pressure distribution (peak $7.96 \times 10^{4} \text{Pa}$ ) and controlled strain rates (peak $6.52 \times 10^{6} \mathrm{s}^{-1}$ ), while M50-T07 exhibited rapid deformation (strain rates up to $1.92 \times 10^{6} \mathrm{s}^{-1}$ ). LIFT experiments confirmed simulations: M50-T13 achieved precise chip placement with deviations of $0.32 \mu \mathrm{m}$ and $0.12 \mu \mathrm{m}$ , whereas M50-T07 failed, showing deviations of 65.3 $\mu \mathrm{m}$ and $76.1 \mu \mathrm{m}$ with chip inversion. We propose a new LIFT transfer accuracy metric, actual to target landing area ratio, with M50-T13 reaching 98.49%, surpassing the industry threshold of 88.54%. This validated model optimizes receiving materials for Micro-LED assembly, highlighting viscosity and damping factor as critical to transfer success, and lays a foundation for material design in precision chip transfer applications.

关键词： Viscosity Damping Solvents Accuracy Deformation Rheology Laser modes Numerical models Stress Strain

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FUNCTIONAL modeling OF LSI FOR simulation.

Proceedings of the Technical Program - International Microel...

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Proceedings of the Technical Program - International microelectronics conference 1980年 221-227页

作者： Wiles, Douglas

During the last decade, LSI technology has changed from theory to application in almost every facet of electronic equipment. This trend will certainly continue in the future. While LSI simplifies board design by performing many complex functions in a single IC, testing these boards requires sophisticated IC modeling techniques. This paper explores functional modeling of LSI for simulation-based automatic test equipment.

关键词： INTEGRATED CIRCUIT TESTING

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An Overview of the modeling and simulation of the Single Event Transients at the Circuit Level 30

An Overview of the Modeling and Simulation of the Single Eve...

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30th IEEE International conference on microelectronics (MIEL)

作者： Andjelkovic, M. Ilic, A. Stamenkovic, Z. Krstic, M. Kraemer, R. IHP Technol Pk 25 D-15236 Frankfurt Oder Germany

ISBN: (纸本)9781538625637

The single event transients (SETs) are a common source of malfunction in nano-scale CMOS integrated circuits. For this reason, evaluation of the SET effects and application of appropriate measures for their mitigation are fundamental tasks in the design of advanced radiation hardened integrated circuits. In general, SET analysis is based on the multi-scale modeling and simulation approach comprising four main phases: modeling and simulation of radiation-matter interactions, device-level modeling and simulation, circuit-level modeling and simulation and logic level modeling and simulation. In order to reduce the time and cost of the evaluation and design processes, a lot of effort is invested into the development of appropriate models which could provide accurate SET simulations at the circuit level. The circuit level simulations provide a good trade-off between the complexity and speed of simulations, and at the same time ensure very good accuracy. This paper reviews the approaches for modeling and simulation of SET effects at the circuit level, emphasizing the major advantages and disadvantages of each approach.

关键词： Integrated circuit modeling Analytical models Semiconductor device modeling Logic gates Transistors CMOS integrated circuits Load modeling

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modeling and design of 3-D MPPT for ultra low power RF energy harvesters

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INTEGRATION-THE VLSI JOURNAL 2020年 72卷 21-28页

作者： Caselli, Michele Boni, Andrea Univ Parma Dept Engn & Architecture I-43124 Parma Italy

Radio-Frequency (RF) energy harvesting must cope with the limited availability and high variability of the energy source. In this paper, the modeling of an RF harvester for ultra low power environments is presented. A mathematical model based on theoretical analysis is developed. The model demonstrates that the maximum transferred power point is located in a three-dimensional space defined by the input capacitance, the output voltage, and the load resistance of the rectifier circuit. Moreover, the mathematical model returns results in substantial agreement with the SPICE simulation results, while guaranteeing a remarkable reduction of the required computation time. Furthermore, the paper reports the implementation of a mixed signal system for the 3-D MPPT, to be embedded in an RF harvester, in a 65 nm CMOS technology. The circuit exhibits a simulated power consumption lower than 100 nW, making this solution suitable for ultra low power harvesting.

关键词： RF energy harvesting 3-D MPPT Harvester modeling Harvester design RF Harvester circuit Ultra low power circuits

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Transfer Molding simulation to Predict Filling Flaws and Optimize Package design 22

Transfer Molding Simulation to Predict Filling Flaws and Opt...

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22nd European microelectronics and Packaging conference and Exhibition (EMPC)

作者： Rovitto, M. Cannavacciuolo, A. STMicroelectronics Via C Olivetti 2 I-20864 Agrate Brianza MB Italy

ISBN: (纸本)9780956808660

The process of microchip encapsulation by epoxy resin injection is simulated by employing moldflow modeling. In this work, the use of modeling allows to reproduce the unbalanced flow behavior of the resin within the mold cavity during the filling stage which leads to the formation of voids in the molded package. simulation results are compared to experimental findings, in which the molding process is interrupted at designed points in time. Comparison shows good agreement between numerical outputs and experimental data and demonstrates the effectiveness of the model. After modeling is validated, the numerical methodology is applied to optimized package design in order to minimize the risk of issues caused by the filling stage. As a result, geometric variations show a significant effect on filling front progression avoiding the generation of structural defects during molding process.

关键词： package molding resin moldflow void weld line

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Analytical modeling and simulation Studies of High Voltage Super-junction Drift layer for Power MOSFET

Analytical Modeling and Simulation Studies of High Voltage S...

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22nd International conference on microelectronics (ICM 2010)

作者： Kondekar, Pravin N. Indian Inst Informat Technol Design & Mfg Jabalpur MP India

ISBN: (纸本)9781612841519

In the conventional VDMOS high voltage super-junction (SJ) power transistor, to achieve high breakdown voltage (BV), you have to use lower doping and higher thickness of the drift layer which prohibitively increases it on resistance making it unsuitable for use. Super-junction power MOSFET (CooIMOS (TM)) claim to resolve this limitation and high voltage device up 1000V are using super junction drift layer with relatively low on resistance. In this paper an effort is made to explain in detail with the help of analytical treatment and simulation results to understand the physical mechanisms involved in improving the on resistance with high BV. An analytical modeling method is also proposed to get the design guide line for device dimensions and optimum doping levels for minimum on resistance based on Super-junction Theory.

关键词： Super-junction MOSFET VDMOS Charge imbalance Breakdown voltage Power MOSFET Charge compensation

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Optimization of Through Crackstop Via using Finite Element modeling 18

Optimization of Through Crackstop Via using Finite Element M...

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18th International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems (EuroSimE)

作者： Rabie, Mohamed A. Polomoff, Nick GLOBALFOUNORIES Inc 400 Stone Break Rd Extens Malta NY 12020 USA

ISBN: (纸本)9781509043446

The ability of Through Crackstop Via (TCV) to prevent cracks from propagation is compared to conventional crackstop using a novel systematlc simulation methodology. The design of TCV is, then, optimized by varying the angle between the metal layers as well as the TCV width. The larger angle and Width result in a better TCV. The improvement in the TCV saturates at a specific TCV width.

关键词： Stress Load modeling Copper Dielectrics Strain Loading

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