检索结果-内蒙古大学图书馆

International conference on CAD Systems in microelectronics (CADSM)

作者： Dmytro Ageyev Aram Mohsin Tamara Radivilova Lyudmyla Kirichenko Infocommunication Engineering Department Kharkiv National University of Radio Electronics Kharkiv Ukraine Applied Mathematics Department Kharkiv National University of Radio Electronics Kharkiv Ukraine

The parametric synthesis is one of the planning stages of infocommunication networks. Recent studies of network traffic properties have shown that models of self-similar processes (self-similar traffic) describe traffic in networks more accurately. In this study, based on previously known studies of self-similar traffics, infocommunication network synthesis methods have been proposed. Using the proposed models and calculation expressions allow to solve the problems of parametric synthesis by the known characteristics of the input traffic flows. The solution method involves the distribution of traffic along the routes, determining the parameters of aggregated traffic in the communication channels, determining the bandwidth of the communication channels. The correctness of the results obtained by this method was verified using modeling by comparing them with estimated values, and also measured in segments of real networks. As a result of the simulation the reliability of the proposed method for determining the parameters of aggregated self-similar traffic and the method of parametric synthesis has been proven.

关键词： Communication channels Fractals Dispersion Mathematical model Telecommunication traffic Load modeling

来源：评论

学校读者我要写书评

暂无评论

Current Threshold Elements of Cyclic Shift for Constructing Specialized IP-Memory Modules in Automation and Systems for Tolerance Control of Analog Signals

引用

Journal of Physics: conference Series 2020年第1期1443卷

作者： N V Butyrlagin N I Chernov N N Prokopenko V Ya Yugai Department of Information System and Radio engineering Don State Technical University Gagarin Sq. 1 Rostov-on-Don 344000 Russia Institute for Design Problems in Microelectronics of Russian Academy of Sciences Institute for Design Problems in Microelectronics RAS Sovetskaya St. 3 Zelenograd 124681 Russia

The current threshold elements of direct and reverse cyclic shift are developed. This logical elements are recommended as memory elements for the construction of relevant controllers and devices for tolerance control of analog signals, which used in diagnosis of complex electronic equipment. The mathematical apparatus used in the design is a linear algebra. The basic equations and results of computer modeling of the developed cyclic shift schemes are presented. Computer simulation was carried out in the Cadence environment on models of field-effect transistors XB06.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Redundant Double Conversion based Digital Background Calibration of SAR ADC with Convergence Acceleration and Assistance 25

Redundant Double Conversion based Digital Background Calibra...

引用

25th International conference on Mixed design of Integrated Circuits and System (MIXDES)

作者： Ding, Xiang Hofmann, Klaus Zhang, Liang Yi, Dongbai Ma, Yingjiang Tech Univ Darmstadt Integrated Elect Syst Lab Merckstr 25 D-64283 Darmstadt Germany Gree Elect Appliances Inc Commun Technol Res Inst West Jinji Rd Qianshan 519070 Zhuhai Peoples R China

ISBN: (纸本)9788363578145

A redundant double conversion (RDC) based digital background technique for successive approximation analogueto-digital converters (SAR ADCs) with convergence acceleration and assistance is presented. The convergence time of the RDC based calibration is reduced by monitoring the error between two raw conversion results of a sub-2 SAR ADC and increasing the step-size parameter of the least mean square (LMS) if the detected error is less than a threshold. The convergence assistance is accomplished by injecting a random perturbation signal to a stationary input. Behavioral simulation shows that the proposed technique reduces convergence time of the RDC calibration by 30% while maintains a comparable resolution and power consumption. With the random perturbation signal generated by a 5-bit digital-to-analog converter (DAC) RDC calibration can be started and an ENOB about 10 is obtainable.

关键词： SAR ADC background calibration LMS RDC device mismatch mixed-signal integrated circuit high-level modeling and simulation

来源：评论

学校读者我要写书评

暂无评论

MEMS Gyroscope FEM modeling and simulation 25

MEMS Gyroscope FEM Modeling and Simulation

引用

25th International conference on Mixed design of Integrated Circuits and System (MIXDES)

作者： Nazdrowicz, Jacek Szermer, Michal Stawinski, Adam Napieralski, Andrzej Lodz Univ Technol Dept Microelect & Comp Sci Lodz Poland

ISBN: (纸本)9788363578145

This paper the analysis of a 3D model of MEMS Gyroscope is presented. The FEM analysis of the 3D structure has been performed in very popular COMSOL Multiphysit software. Authors took particular attention on mechanical behaviour particular parts of this device especially combs (used in electrostatical actuators and sensors) in drive and sense directions. For further electrostatic analysis (which is not covered in this article) this analysis has enormous meaning because any deformation of comb structure during operation influences on quality of electrostatic actuating and sensing. In this paper author performed stress results and deformation analysis in sense direction, however similar conclusions one can he drawn for drive direction.

关键词： gyroscope comb structure MEMS Finite Element Method

来源：评论

学校读者我要写书评

暂无评论

L-MPC: A LUT based MuIti-LeveI Prediction-Correction Architecture for Accelerating Binary-Weight Hourglass Network

L-MPC: A LUT based MuIti-LeveI Prediction-Correction Archite...

引用

design Automation conference

作者： Hong Liu Leibo Liu Wenping Zhu Qiang Li Huiyu Mo Shaojun Wei Institute of Microelectronics Tsinghua University Beijing China Chinese Academy of Science Institute of Semiconductors Beijing China Intel Corporation Beijing China

ISBN: (纸本)9781728124261

A binary-weight hourglass network (B-HG) accelerator for landmark detection, built on the proposed look-up-table (LUT) based multi-level prediction-correction approach, is enabled for highspeed and energy-efficient processing on IoT edge devices. First, LUT with a unified mode is adopted to support convolutional neural network with fully variable weight bit precision to minimize operations of B-HG, which achieves 1.33×-1.50× speedup on multi-bit weight CNN relative to the similar solution. Second, multi-level prediction-correction model is proposed to achieve computationalefficient convolution with adaptive precision. The operations saved can be increase by about 30% than the two-stage model. Besides, nearly 77.4% of the operations in B-HG can be saved by using the combination of these two methods, yielding a 2.3× inference speedup. Third, block computing based pipeline is designed to improve the residual block deficiency in B-HG. It can not only reduce about 66.2% off-chip memory access than the baseline, but also save 60% and 31% on-chip memory space and access compared to the similar fused-layer accelerator. The proposed B-HG accelerator achieves 450 fps at 500MHz based on the simulation in TSMC 28 nm process. Meanwhile, the power efficiency is up to 8.5 TOPS/W, which is two orders of magnitude higher than the dedicated face landmark detection accelerator.

关键词： Table lookup Kernel Convolution Computational modeling Energy efficiency Image edge detection Hardware

来源：评论

学校读者我要写书评

暂无评论

An Overview of the modeling and simulation of the Single Event Transients at the Circuit Level 30

An Overview of the Modeling and Simulation of the Single Eve...

引用

30th IEEE International conference on microelectronics (MIEL)

作者： Andjelkovic, M. Ilic, A. Stamenkovic, Z. Krstic, M. Kraemer, R. IHP Technol Pk 25 D-15236 Frankfurt Oder Germany

ISBN: (纸本)9781538625637

The single event transients (SETs) are a common source of malfunction in nano-scale CMOS integrated circuits. For this reason, evaluation of the SET effects and application of appropriate measures for their mitigation are fundamental tasks in the design of advanced radiation hardened integrated circuits. In general, SET analysis is based on the multi-scale modeling and simulation approach comprising four main phases: modeling and simulation of radiation-matter interactions, device-level modeling and simulation, circuit-level modeling and simulation and logic level modeling and simulation. In order to reduce the time and cost of the evaluation and design processes, a lot of effort is invested into the development of appropriate models which could provide accurate SET simulations at the circuit level. The circuit level simulations provide a good trade-off between the complexity and speed of simulations, and at the same time ensure very good accuracy. This paper reviews the approaches for modeling and simulation of SET effects at the circuit level, emphasizing the major advantages and disadvantages of each approach.

关键词： Integrated circuit modeling Analytical models Semiconductor device modeling Logic gates Transistors CMOS integrated circuits Load modeling

来源：评论

学校读者我要写书评

暂无评论

Optimization of Through Crackstop Via using Finite Element modeling 18

Optimization of Through Crackstop Via using Finite Element M...

引用

18th International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems (EuroSimE)

作者： Rabie, Mohamed A. Polomoff, Nick GLOBALFOUNORIES Inc 400 Stone Break Rd Extens Malta NY 12020 USA

ISBN: (纸本)9781509043446

The ability of Through Crackstop Via (TCV) to prevent cracks from propagation is compared to conventional crackstop using a novel systematlc simulation methodology. The design of TCV is, then, optimized by varying the angle between the metal layers as well as the TCV width. The larger angle and Width result in a better TCV. The improvement in the TCV saturates at a specific TCV width.

关键词： Stress Load modeling Copper Dielectrics Strain Loading

来源：评论

学校读者我要写书评

暂无评论

A TCAD modeling Approach for Diamond Particle Detectors: simulation and Test 13

A TCAD Modeling Approach for Diamond Particle Detectors: Sim...

引用

13th conference on Ph.D. Research in microelectronics and Electronics (PRIME) / 14th International conference on Synthesis, modeling, Analysis and simulation Methods and Application to Circuit design (SMACD)

作者： Morozzi, Arianna Passeri, Daniele Univ Perugia Engn Dept Perugia Italy INFN Perugia Perugia Italy

ISBN: (纸本)9781509065080

In order to fully exploit the properties of diamond in electronic semiconductor applications, standard design and verification tools should be adopted, following the conventional TCAD design flow. However, diamond is not included in the material's library of commercial TCAD simulation tools, due to the novelty of using this material in electronics. To this end the TCAD tools capabilities have been enhanced by developing an innovative numerical model for the simulations of advanced diamond devices conceived for particle detection in High-Energy Physics (HEP) experiments. This work focuses on the parameterization of the TCAD numerical model for polycrystalline diamond, on its validation against experimental data and on its application as a predictive tool for the electrical behavior of commercial polycrystalline diamond and Diamond-on-Iridium detectors.

关键词： TCAD Diamond Numerical modeling

来源：评论

学校读者我要写书评

暂无评论

High-Frequency Electronic modeling Using Neural Networks

High-Frequency Electronic Modeling Using Neural Networks

引用

2018 International conference on Advanced Control, Automation and Artificial Intelligence (ACAAI2018)

作者： Qijun Zhang School of Microelectronics Tianjin University

We present an overview of neural network approaches for efficient modeling, simulation and optimization of high-frequency electronic and microwave circuits. Neural networks trained from electronic/microwave data are subsequently used for circuit simulation and optimization. A brief introduction of the fundamentals of neural network structures and neural model development issues including data generation, and neural network training are summarized. Applications of neural networks for modeling, simulation and optimization of transmission line networks for interconnect analysis on printed circuit board design are illustrated.

关键词： modeling neural networks high-frequency electronics microwave

来源：评论

学校读者我要写书评

暂无评论

On the modelling and placement of bonding-pillar holes in multi-wafer, vacuum-packaged MEMS 20

On the modelling and placement of bonding-pillar holes in mu...

引用

20th Symposium on design, Test, Integration and Packaging of MEMS and MOEMS, DTIP 2018

作者： Bojesomo, Alabi Syed, Wajih Elfadel, Ibrahim Abe M. Department of Electrical and Computer Engineering Masdar Institute Khalifa University of Science and Technology Abu Dhabi United Arab Emirates

ISBN: (纸本)9781538661994

Reliability considerations in multi-wafer, vacuum- packaged MEMS often require the usage of bonding pillars connecting the top and bottom capping wafers. Such bonding pillars in turn require the etching of holes into the device wafer. Placement constraints sometimes necessitate that these holes be etched through the mechanical element itself, be it the beam, the membrane or the proofmass. In this paper, we use the example of a micro-scale piezoelectric energy harvesting platform to incorporate the effect of bonding-pillar holes of arbitrary shapes and sizes in the electromechanical model of the device. In particular, we develop the corresponding multi-modal equivalent circuit model (ECM) and use a MEMS-CMOS co-simulation environment to obtain the single-mode terminal voltage output under resistive loads. The ECM has been fully validated using 3D Finite Element analysis, and the impact of bonding-pillar holes on device metrics has been compactly parameterised for the first time. This modeling approach is included in a new design framework for device structural integrity whose goal is the optimal placement and sizing of bonding pillars in multi- wafer, vacuum-packaged MEMS. © 2018 IEEE.

关键词： MEMS

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：