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22nd International conference on microelectronics (ICM 2010)

作者： Kondekar, Pravin N. Indian Inst Informat Technol Design & Mfg Jabalpur MP India

ISBN: (纸本)9781612841519

In the conventional VDMOS high voltage super-junction (SJ) power transistor, to achieve high breakdown voltage (BV), you have to use lower doping and higher thickness of the drift layer which prohibitively increases it on resistance making it unsuitable for use. Super-junction power MOSFET (CooIMOS (TM)) claim to resolve this limitation and high voltage device up 1000V are using super junction drift layer with relatively low on resistance. In this paper an effort is made to explain in detail with the help of analytical treatment and simulation results to understand the physical mechanisms involved in improving the on resistance with high BV. An analytical modeling method is also proposed to get the design guide line for device dimensions and optimum doping levels for minimum on resistance based on Super-junction Theory.

关键词： Super-junction MOSFET VDMOS Charge imbalance Breakdown voltage Power MOSFET Charge compensation

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design and analysis of RAM transparent March test for BIST implementation

Design and analysis of RAM transparent March test for BIST i...

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conference on design, modeling, and simulation in microelectronics

作者： Demidenko, S Henderson, S Massey Univ Inst Informat Sci & Technol Palmerston North New Zealand

New transparent memory test algorithms for semiconductor memory are presented in the paper along with the modified memory testing simulation package MAP. The test algorithms allow detecting memory read errors - the er... 详细信息

ISBN: (纸本)0819439002

关键词： semiconductor memory testing transparent March algorithms test simulation

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PLL Real Number modeling in SystemVerilog 16

PLL Real Number Modeling in SystemVerilog

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16th International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 15th conference on PhD Research in microelectronics and Electronics (PRIME)

作者： Louis, Mina Dessouky, Mohamed Salem, Ashraf Mentor Cairo Egypt

ISBN: (纸本)9781728112015

This paper discusses different techniques for the development of event-driven, analog functional models based on SystemVerilog for system-level verification. It leverages the recent introduction of additional real number capabilities in SystemVerilog to represent analog signals, known by Real Number modeling (RNM). In addition to the introduction of composite user-defined net types that can carry multiple information, e.g. voltage, current, impedance, .... A Phase Locked Loop (PLL) model is considered as a vehicle to demonstrate the different proposed techniques. It is shown that using a pure SystemVerilog model, it is possible to achieve a comparable accuracy to Spice transistor-level simulation with a 27x simulation speedup.

关键词： RNM Real Number modeling SystemVerilog z-transform PLL Lookup Table nettypes

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Analysis, modeling and design of a CMOS Super-Regenerative Receiver for implanted medical devices under square and sinusoidal quench signals

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INTEGRATION-THE VLSI JOURNAL 2019年 67卷 1-7页

作者： Pekcokguler, Naci Dundar, Gunhan Dehollain, Catherine Bogazici Univ Dept Elect & Elect Engn TR-34342 Istanbul Turkey Ecole Polytech Fed Lausanne RFIC Grp CH-1015 Lausanne Switzerland

Medical implant devices have found widespread application in recent years. The Super-Regenerative Receiver has been one preferred architecture due to its power advantage over other architectures. We present a detailed analysis of the circuits and their equivalent models to be used in system level design of a Super-Regenerative Receiver in this paper. The design procedure is also demonstrated with a receiver design example. designs were carried out in UMC 180 nm process with a center frequency of 416 MHz for MedRadio band. Errors between the simulation results of the proposed model and actual circuits are less than 1.6% for LNA characteristics and 7% for receiver output amplitude. 10 Mbps data rate was achieved with 432 pJ/bit energy consumption over 1.8 V power supply. The study is concluded with the simulation results of the circuits and the equivalent models.

关键词： Super-regenerative receiver SRR Medical implant Analytic model Equivalent circuit model Receiver design

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Multi-physics modeling in virtual prototyping of electronic packages - combined thermal, thermo-mechanical and vapor pressure modeling

Multi-physics modeling in virtual prototyping of electronic ...

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International conference on Thermal and Mechanical simulation and Experiments in microelectronics and Microsystems

作者： Fan, XJ Zhou, J Zhang, GQ Philips Res USA Briarcliff Manor NY 10510 USA Lamar Univ Dept Engn Mech Beaumont TX 77710 USA Eindhoven Univ Technol Eindhoven Netherlands

The realization of virtual prototyping of electronic packages depends on the capability and reliability of multiphysics modeling. This paper focuses on the methods and solutions of combined thermal and thermo-mechanical modeling. The package-level thermal behaviors for various kinds of packages are discussed first through the thermal simulation. The impact of internal package design on thermal performance is highlighted. Then the methods and solutions of combined thermal and thermo-mechanical modeling are addressed in detail. The strong interactions of thermal and mechanical simulations, as well as the trade-off between thermal and mechanical designs are discussed through two case studies. The benefit of moisture behavior modeling for the package design is also briefed in this paper. (C) 2004 Elsevier Ltd. All rights reserved.

关键词： microelectronics

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Fast converter simulation method including parasitic nonlinear capacitances 15

Fast converter simulation method including parasitic nonline...

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15th International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 14th conference on PhD Research in microelectronics and Electronics (PRIME)

作者： Schmidt, Eva Duerbaum, Thomas Friedrich Alexander Univ Erlangen Nuremberg Chair Electromagnet Fields Erlangen Germany

ISBN: (纸本)9781538651537

Converter topologies of Switch Mode Power Supplies, for example in consumer products, have to fulfill many specifications and demands especially in matters of efficiency and low overall costs. In order to optimize these converters, simulation methods have to be found that predict their real behavior accurately within short simulation time. However, simulation accuracy often suffers from neglection of nonlinear component characteristics, especially nonlinear capacitances associated with semiconductor devices. Integrating them in Sample Data modeling generates a simulation method that achieves both goals, short simulation durations and results close to reality.

关键词： Sampled Data modeling nonlinear piece wise constant capacitance

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Modelling, simulations and Performance Analysis of MEMS vibrating Gyroscope in Coventor MEMS plus Environment 20

Modelling, Simulations and Performance Analysis of MEMS vibr...

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20th International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems (EuroSimE)

作者： Nazdrowicz, Jacek Napieralski, Andrzej Lodz Univ Technol Wolczanska St 221-223 PL-90924 Lodz Poland

ISBN: (纸本)9781538680407

In the paper authors present heterogeneous environment for modeling and simulations created with use Coventor MEMS+ and Matlab/SIMULINK software. The big advantage of this solution is possibility to merge with Cadence software what gives in effect big solution for modeling, simulation and design MEMS structure with ROIC (Read Out Integrated Circuit) for further fabrication. Authors present capabilities of implementation and some results obtained from simulations performed in this environment. There were performed for simple model of MEMS vibratory gyroscope with specific box beam springs on those inertial mass is suspended.

关键词： Micromechanical devices Gyroscopes Solid modeling Mathematical model Springs Integrated circuit modeling Software

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modeling and simulation of Novel GaN-based Light Emitting Transistor for Display Applications 14

Modeling and Simulation of Novel GaN-based Light Emitting Tr...

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作者： Lee, Sang Myung Yun, Ilgu Yonsei Univ Elect & Elect Engn Seoul South Korea

ISBN: (纸本)9781538653869

For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated devices such as mobile application. However, there is a certain limitation to the downsizing technology. Therefore, new device synthesis techniques are becoming important. In this paper, we propose a device design that combines inorganic material based light-emitting diode (LED) and thin-film transistor (TFT). By integrating the LED and TFT devices into one region, it is possible to highly integrate the devices, which can greatly reduce the size of the entire device. To investigate a possibility of device implementation, technology computer-aided design (TCAD) simulation is used. After that, an optical and electrical characteristic of the device are analyzed. Finally, the light-emitting transistor (LET) is proposed.

关键词： inorganic LET TCAD simulation and modeling device prototype implementation

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A TCAD modeling Approach for Diamond Particle Detectors: simulation and Test 13

A TCAD Modeling Approach for Diamond Particle Detectors: Sim...

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13th conference on Ph.D. Research in microelectronics and Electronics (PRIME) / 14th International conference on Synthesis, modeling, Analysis and simulation Methods and Application to Circuit design (SMACD)

作者： Morozzi, Arianna Passeri, Daniele Univ Perugia Engn Dept Perugia Italy INFN Perugia Perugia Italy

ISBN: (纸本)9781509065080

In order to fully exploit the properties of diamond in electronic semiconductor applications, standard design and verification tools should be adopted, following the conventional TCAD design flow. However, diamond is not included in the material's library of commercial TCAD simulation tools, due to the novelty of using this material in electronics. To this end the TCAD tools capabilities have been enhanced by developing an innovative numerical model for the simulations of advanced diamond devices conceived for particle detection in High-Energy Physics (HEP) experiments. This work focuses on the parameterization of the TCAD numerical model for polycrystalline diamond, on its validation against experimental data and on its application as a predictive tool for the electrical behavior of commercial polycrystalline diamond and Diamond-on-Iridium detectors.

关键词： TCAD Diamond Numerical modeling

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Characterization and modeling of avalanche multiplication in HBTs

Characterization and modeling of avalanche multiplication in...

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conference on design, modeling, and simulation in microelectronics

作者： Lin, FJ Chen, B Zhou, TS Ooi, BL Kooi, PS Natl Univ Singapore Dept Elect Engn Singapore 119260 Singapore Agilent Technol SMMC Singapore 119958 Singapore

ISBN: (纸本)0819439002

The accurate modeling of weak avalanche breakdown of HBTs in compact bipolar transistor models for circuit simulation is presented. Based on various device electrical characteristics that are grouped into three classes, a modified VBIC avalanche multiplication model is proposed. By simply replacing one constant avalanche model parameter with current linear dependence, the new model predicts well broad behaviors of breakdown from weak avalanche up into high level injections. (C) 2002 Elsevier Science Ltd. All rights reserved.

关键词： avalanche multiplication bipolar transistor modeling compact model SiGeHBT VBIC parameter extraction

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