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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"
1418 条 记 录,以下是31-40 订阅
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Analytical modeling and simulation Studies of High Voltage Super-junction Drift layer for Power MOSFET
Analytical Modeling and Simulation Studies of High Voltage S...
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22nd International conference on microelectronics (ICM 2010)
作者: Kondekar, Pravin N. Indian Inst Informat Technol Design & Mfg Jabalpur MP India
In the conventional VDMOS high voltage super-junction (SJ) power transistor, to achieve high breakdown voltage (BV), you have to use lower doping and higher thickness of the drift layer which prohibitively increases i... 详细信息
来源: 评论
design and analysis of RAM transparent March test for BIST implementation
Design and analysis of RAM transparent March test for BIST i...
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conference on design, modeling, and simulation in microelectronics
作者: Demidenko, S Henderson, S Massey Univ Inst Informat Sci & Technol Palmerston North New Zealand
New transparent memory test algorithms for semiconductor memory are presented in the paper along with the modified memory testing simulation package MAP. The test algorithms allow detecting memory read errors - the er... 详细信息
来源: 评论
PLL Real Number modeling in SystemVerilog  16
PLL Real Number Modeling in SystemVerilog
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16th International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 15th conference on PhD Research in microelectronics and Electronics (PRIME)
作者: Louis, Mina Dessouky, Mohamed Salem, Ashraf Mentor Cairo Egypt
This paper discusses different techniques for the development of event-driven, analog functional models based on SystemVerilog for system-level verification. It leverages the recent introduction of additional real num... 详细信息
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Analysis, modeling and design of a CMOS Super-Regenerative Receiver for implanted medical devices under square and sinusoidal quench signals
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INTEGRATION-THE VLSI JOURNAL 2019年 67卷 1-7页
作者: Pekcokguler, Naci Dundar, Gunhan Dehollain, Catherine Bogazici Univ Dept Elect & Elect Engn TR-34342 Istanbul Turkey Ecole Polytech Fed Lausanne RFIC Grp CH-1015 Lausanne Switzerland
Medical implant devices have found widespread application in recent years. The Super-Regenerative Receiver has been one preferred architecture due to its power advantage over other architectures. We present a detailed... 详细信息
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Multi-physics modeling in virtual prototyping of electronic packages - combined thermal, thermo-mechanical and vapor pressure modeling
Multi-physics modeling in virtual prototyping of electronic ...
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International conference on Thermal and Mechanical simulation and Experiments in microelectronics and Microsystems
作者: Fan, XJ Zhou, J Zhang, GQ Philips Res USA Briarcliff Manor NY 10510 USA Lamar Univ Dept Engn Mech Beaumont TX 77710 USA Eindhoven Univ Technol Eindhoven Netherlands
The realization of virtual prototyping of electronic packages depends on the capability and reliability of multiphysics modeling. This paper focuses on the methods and solutions of combined thermal and thermo-mechanic... 详细信息
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Fast converter simulation method including parasitic nonlinear capacitances  15
Fast converter simulation method including parasitic nonline...
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15th International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 14th conference on PhD Research in microelectronics and Electronics (PRIME)
作者: Schmidt, Eva Duerbaum, Thomas Friedrich Alexander Univ Erlangen Nuremberg Chair Electromagnet Fields Erlangen Germany
Converter topologies of Switch Mode Power Supplies, for example in consumer products, have to fulfill many specifications and demands especially in matters of efficiency and low overall costs. In order to optimize the... 详细信息
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Modelling, simulations and Performance Analysis of MEMS vibrating Gyroscope in Coventor MEMS plus Environment  20
Modelling, Simulations and Performance Analysis of MEMS vibr...
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20th International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems (EuroSimE)
作者: Nazdrowicz, Jacek Napieralski, Andrzej Lodz Univ Technol Wolczanska St 221-223 PL-90924 Lodz Poland
In the paper authors present heterogeneous environment for modeling and simulations created with use Coventor MEMS+ and Matlab/SIMULINK software. The big advantage of this solution is possibility to merge with Cadence... 详细信息
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modeling and simulation of Novel GaN-based Light Emitting Transistor for Display Applications  14
Modeling and Simulation of Novel GaN-based Light Emitting Tr...
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15th International conference on Synthesis, modeling, Analysis and simulation Methods and Applications to Circuit design (SMACD) / 14th conference on PhD Research in microelectronics and Electronics (PRIME)
作者: Lee, Sang Myung Yun, Ilgu Yonsei Univ Elect & Elect Engn Seoul South Korea
For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated ... 详细信息
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A TCAD modeling Approach for Diamond Particle Detectors: simulation and Test  13
A TCAD Modeling Approach for Diamond Particle Detectors: Sim...
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13th conference on Ph.D. Research in microelectronics and Electronics (PRIME) / 14th International conference on Synthesis, modeling, Analysis and simulation Methods and Application to Circuit design (SMACD)
作者: Morozzi, Arianna Passeri, Daniele Univ Perugia Engn Dept Perugia Italy INFN Perugia Perugia Italy
In order to fully exploit the properties of diamond in electronic semiconductor applications, standard design and verification tools should be adopted, following the conventional TCAD design flow. However, diamond is ... 详细信息
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Characterization and modeling of avalanche multiplication in HBTs
Characterization and modeling of avalanche multiplication in...
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conference on design, modeling, and simulation in microelectronics
作者: Lin, FJ Chen, B Zhou, TS Ooi, BL Kooi, PS Natl Univ Singapore Dept Elect Engn Singapore 119260 Singapore Agilent Technol SMMC Singapore 119958 Singapore
The accurate modeling of weak avalanche breakdown of HBTs in compact bipolar transistor models for circuit simulation is presented. Based on various device electrical characteristics that are grouped into three classe... 详细信息
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