In the conventional VDMOS high voltage super-junction (SJ) power transistor, to achieve high breakdown voltage (BV), you have to use lower doping and higher thickness of the drift layer which prohibitively increases i...
详细信息
ISBN:
(纸本)9781612841519
In the conventional VDMOS high voltage super-junction (SJ) power transistor, to achieve high breakdown voltage (BV), you have to use lower doping and higher thickness of the drift layer which prohibitively increases it on resistance making it unsuitable for use. Super-junction power MOSFET (CooIMOS (TM)) claim to resolve this limitation and high voltage device up 1000V are using super junction drift layer with relatively low on resistance. In this paper an effort is made to explain in detail with the help of analytical treatment and simulation results to understand the physical mechanisms involved in improving the on resistance with high BV. An analytical modeling method is also proposed to get the design guide line for device dimensions and optimum doping levels for minimum on resistance based on Super-junction Theory.
New transparent memory test algorithms for semiconductor memory are presented in the paper along with the modified memory testing simulation package MAP. The test algorithms allow detecting memory read errors - the er...
详细信息
ISBN:
(纸本)0819439002
New transparent memory test algorithms for semiconductor memory are presented in the paper along with the modified memory testing simulation package MAP. The test algorithms allow detecting memory read errors - the error type that was not covered in the previous research.
This paper discusses different techniques for the development of event-driven, analog functional models based on SystemVerilog for system-level verification. It leverages the recent introduction of additional real num...
详细信息
ISBN:
(纸本)9781728112015
This paper discusses different techniques for the development of event-driven, analog functional models based on SystemVerilog for system-level verification. It leverages the recent introduction of additional real number capabilities in SystemVerilog to represent analog signals, known by Real Number modeling (RNM). In addition to the introduction of composite user-defined net types that can carry multiple information, e.g. voltage, current, impedance, .... A Phase Locked Loop (PLL) model is considered as a vehicle to demonstrate the different proposed techniques. It is shown that using a pure SystemVerilog model, it is possible to achieve a comparable accuracy to Spice transistor-level simulation with a 27x simulation speedup.
Medical implant devices have found widespread application in recent years. The Super-Regenerative Receiver has been one preferred architecture due to its power advantage over other architectures. We present a detailed...
详细信息
Medical implant devices have found widespread application in recent years. The Super-Regenerative Receiver has been one preferred architecture due to its power advantage over other architectures. We present a detailed analysis of the circuits and their equivalent models to be used in system level design of a Super-Regenerative Receiver in this paper. The design procedure is also demonstrated with a receiver design example. designs were carried out in UMC 180 nm process with a center frequency of 416 MHz for MedRadio band. Errors between the simulation results of the proposed model and actual circuits are less than 1.6% for LNA characteristics and 7% for receiver output amplitude. 10 Mbps data rate was achieved with 432 pJ/bit energy consumption over 1.8 V power supply. The study is concluded with the simulation results of the circuits and the equivalent models.
The realization of virtual prototyping of electronic packages depends on the capability and reliability of multiphysics modeling. This paper focuses on the methods and solutions of combined thermal and thermo-mechanic...
详细信息
The realization of virtual prototyping of electronic packages depends on the capability and reliability of multiphysics modeling. This paper focuses on the methods and solutions of combined thermal and thermo-mechanical modeling. The package-level thermal behaviors for various kinds of packages are discussed first through the thermal simulation. The impact of internal package design on thermal performance is highlighted. Then the methods and solutions of combined thermal and thermo-mechanical modeling are addressed in detail. The strong interactions of thermal and mechanical simulations, as well as the trade-off between thermal and mechanical designs are discussed through two case studies. The benefit of moisture behavior modeling for the package design is also briefed in this paper. (C) 2004 Elsevier Ltd. All rights reserved.
Converter topologies of Switch Mode Power Supplies, for example in consumer products, have to fulfill many specifications and demands especially in matters of efficiency and low overall costs. In order to optimize the...
详细信息
ISBN:
(纸本)9781538651537
Converter topologies of Switch Mode Power Supplies, for example in consumer products, have to fulfill many specifications and demands especially in matters of efficiency and low overall costs. In order to optimize these converters, simulation methods have to be found that predict their real behavior accurately within short simulation time. However, simulation accuracy often suffers from neglection of nonlinear component characteristics, especially nonlinear capacitances associated with semiconductor devices. Integrating them in Sample Data modeling generates a simulation method that achieves both goals, short simulation durations and results close to reality.
In the paper authors present heterogeneous environment for modeling and simulations created with use Coventor MEMS+ and Matlab/SIMULINK software. The big advantage of this solution is possibility to merge with Cadence...
详细信息
ISBN:
(纸本)9781538680407
In the paper authors present heterogeneous environment for modeling and simulations created with use Coventor MEMS+ and Matlab/SIMULINK software. The big advantage of this solution is possibility to merge with Cadence software what gives in effect big solution for modeling, simulation and design MEMS structure with ROIC (Read Out Integrated Circuit) for further fabrication. Authors present capabilities of implementation and some results obtained from simulations performed in this environment. There were performed for simple model of MEMS vibratory gyroscope with specific box beam springs on those inertial mass is suspended.
For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated ...
详细信息
ISBN:
(纸本)9781538653869
For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated devices such as mobile application. However, there is a certain limitation to the downsizing technology. Therefore, new device synthesis techniques are becoming important. In this paper, we propose a device design that combines inorganic material based light-emitting diode (LED) and thin-film transistor (TFT). By integrating the LED and TFT devices into one region, it is possible to highly integrate the devices, which can greatly reduce the size of the entire device. To investigate a possibility of device implementation, technology computer-aided design (TCAD) simulation is used. After that, an optical and electrical characteristic of the device are analyzed. Finally, the light-emitting transistor (LET) is proposed.
In order to fully exploit the properties of diamond in electronic semiconductor applications, standard design and verification tools should be adopted, following the conventional TCAD design flow. However, diamond is ...
详细信息
ISBN:
(纸本)9781509065080
In order to fully exploit the properties of diamond in electronic semiconductor applications, standard design and verification tools should be adopted, following the conventional TCAD design flow. However, diamond is not included in the material's library of commercial TCAD simulation tools, due to the novelty of using this material in electronics. To this end the TCAD tools capabilities have been enhanced by developing an innovative numerical model for the simulations of advanced diamond devices conceived for particle detection in High-Energy Physics (HEP) experiments. This work focuses on the parameterization of the TCAD numerical model for polycrystalline diamond, on its validation against experimental data and on its application as a predictive tool for the electrical behavior of commercial polycrystalline diamond and Diamond-on-Iridium detectors.
The accurate modeling of weak avalanche breakdown of HBTs in compact bipolar transistor models for circuit simulation is presented. Based on various device electrical characteristics that are grouped into three classe...
详细信息
ISBN:
(纸本)0819439002
The accurate modeling of weak avalanche breakdown of HBTs in compact bipolar transistor models for circuit simulation is presented. Based on various device electrical characteristics that are grouped into three classes, a modified VBIC avalanche multiplication model is proposed. By simply replacing one constant avalanche model parameter with current linear dependence, the new model predicts well broad behaviors of breakdown from weak avalanche up into high level injections. (C) 2002 Elsevier Science Ltd. All rights reserved.
暂无评论