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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"

共 1419 条记录，以下是421-430 订阅

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Automated Generation of System-Level AMS Operating Condition Checks: Your Model's Insurance Policy 14

Automated Generation of System-Level AMS Operating Condition...

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13th conference on Ph.D. Research in microelectronics and Electronics (PRIME) / 14th International conference on Synthesis, modeling, Analysis and simulation Methods and Application to Circuit design (SMACD)

作者： Glaeser, Georg Grabmann, Martin Kropp, Gerrit Fuertig, Andreas IMMS Inst Mikroelekt & Mechatron Syst Gemeinnutzi Ilmenau Germany Goethe Univ Frankfurt aM Inst Comp Sci Frankfurt Germany

ISBN: (纸本)9781509050529

Analog/Mixed-Signal (AMS) design and verification strongly relies on more or less abstract models to make extensive simulations feasible. Maintaining consistent behavior between system model and implementation is crucial for a correct verification. Operating conditions have to be a major concern: A faulty model might introduce false-positive verification results despite of erroneous operating conditions. We propose a novel method to automatically generate a model safe-guard unit from transistor-level simulation data. We introduce this unit into an abstract model in VerilogAMS to check the validity of the current operating conditions. This method can be used to significantly reduce the risk of erroneous verification results on system level. We demonstrate our approach using an RFID demodulator circuit. The model is automatically augmented with additional checks derived from an exploration of the underlying circuits' parameter space. By comparing the risk of false-positive simulation results, we prove that the design risk can be nearly eliminated.

关键词： Hardware design languages Integrated circuit modeling Actuators Support vector machines Demodulation Adaptation models Data models

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A Physical Current Model for Self-Depleted T-gate Schottky Barrier Tunneling FET with Low SS and High ION/IOFF

A Physical Current Model for Self-Depleted T-gate Schottky B...

引用

International conference on Solid-State and Integrated Circuit Technology

作者： Jin Luo Zhu Lv Qian-Qian Huang Cheng Chen Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

Compared with conventional tunneling field-effect transistor (TFET), the novel T-gate Schottky barrier TFET (TSB-TFET) with adaptive operation mechanism can effectively achieve higher I ON with dominant Schottky current, lower I OFF by introducing self-depleted effect and steep subthreshold slope with dominant band-to-band tunneling current. To facilitate the circuit simulation based on this new kind of device, in this paper, we establish a physical current model of TSB-TFET through modeling its modulated band-to-band tunneling and Schottky barrier injection current respectively. The current model results with different device parameters agree well with Sentaurus TCAD simulation results, showing its high applicability for further circuit design and simulation.

关键词： Junctions Schottky barriers Tunneling TFETs Logic gates Integrated circuit modeling Fingers

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Incremental Grounded Voltage Controlled Memristor Emulator

Incremental Grounded Voltage Controlled Memristor Emulator

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International conference on microelectronics, ICM

作者： Ahmed M. Hassanein Abdulaziz H. Elsafty Lobna A. Said Ahmed H. Madian Ahmed G. Radwan NISC Research Center Nile University Giza Egypt Dept. of Engineering Mathematics and Physics Cairo University Egypt

ISBN: (纸本)9781538681688;9781538681671

Memristor has become an interesting research subject in the recent years. Its special behavior has attracted the attention of the research community that motivated researchers to investigate it in details. As memristor is a relatively new electrical element, it is not yet available in the market as a solid state component Researchers found their way to build memristor emulators to achieve its pinched hysteresis. While many papers proposed floating emulators, only a few papers presented a grounded one. In this paper, an incremental grounded memristor emulator is proposed. The mathematical model of the emulator is discussed to match the theoretical model. simulations are carried out to verify the circuit functionality. Parasitic effects have been studied for the proposed design. The emulator is very simple with only two current conveyors, one multiplier, and some passive elements. Experimental results showed a great match to the simulation results from SPICE.

关键词： Memristors Mathematical model Hysteresis Capacitors microelectronics Integrated circuit modeling

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TARS: A Toolbox for Statistical Reliability modeling of CMOS Devices 14

TARS: A Toolbox for Statistical Reliability Modeling of CMOS...

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作者： Diaz-Fortuny, J. Martin-Martinez, J. Rodriguez, R. Nafria, M. Castro-Lopez, R. Roca, E. Fernandez, F. V. UAB Elect Engn Dept REDEC Grp Barcelona Spain Univ Seville CSIC IMSE CNM Inst Microelect Sevilla Seville Spain

ISBN: (纸本)9781509050529

This paper presents a toolbox for the automation of the electrical characterization of CMOS transistors. The developed software provides a user-friendly interface to carry out different tests to evaluate time-zero (i.e., process) and time-dependent variability in CMOS devices. Also, the software incorporates a post-processing capability that allows users to visualize the data. Moreover, without loss of generality, the toolbox allows the user, from the measured data, to feed a particular physics-based model that accounts for various aging phenomena.

关键词： Variability Aging BTI CHC RTN Device modeling Automated characterization lab

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FEM-based numerical simulation supporting experimentally tested Electrochemotherapy protocols 14

FEM-based numerical simulation supporting experimentally tes...

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作者： Lamberti, Patrizia Tucci, Vincenzo Romeo, Stefania Sannino, Anna Zeni, Olga Scarfi, Maria Rosaria Univ Salerno Dept Informat & Elect Engn & Appl Math Salerno Italy Italian Natl Res Council Inst Electromagnet Sensing Environm Naples Italy

ISBN: (纸本)9781509050529

Electrochemotherapy (ECT) is a clinical procedure for the local treatment of solid tumors, which combines the application of pulsed electric fields (PEFs) and chemotherapeutic drugs, by exploiting the PEF-induced membrane permeabilization (electroporation, EP). The ESOPE pulsing protocol (8 pulses with 100 mu s duration and 1 kV/cm electric field strength, given at 1 Hz or 5 kHz as repetition rate) is the only protocol approved for application on human patients and is currently used in the clinical practice. Moving from an experimental study comparing the efficacy of ESOPE to that of modified PEF protocol with lower electric field intensity and higher pulse number, in this paper an electrophysiological model is used to provide theoretical support to the experimental results. The pore density and the transmembrane voltage time behavior at the upper pole of a single spherical cell are considered, in order to assess the EP effect of the applied pulse train, considered as boundary condition in the field based solution of the problem. The simulation results highlight that, 40 pulses 750 V/cm is a good candidate as ESOPE equivalent protocol.

关键词： electroporation ECT electrophysiological model time domain analysis FEM pulsed electric field

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Model of Series-Parallel Photovoltaic Arrays designed for Parallel Computing 14

Model of Series-Parallel Photovoltaic Arrays Designed for Pa...

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作者： Bastidas-Rodriguez, Juan D. Gonzalez, Daniel Ramos-Paja, Carlos A. Univ Ind Santander Escuela Ingn Elect Elect & Telecomunicac Bucaramanga Colombia Inst Tecnol Metropolitano Medellin Colombia Univ Nacl Colombia Fac Minas Medellin Colombia

ISBN: (纸本)9781509050529

Photovoltaic (PV) arrays connected in Series-Parallel (SP) configuration are widely used in PV installations of different power levels. Accurate and low calculation time models of SP arrays are required for different applications;however, the models available in literature have a high computational burden due to the requirement of solving nested systems of nonlinear equations. This paper introduces a mathematical model for SP arrays designed for parallel computing to improve the calculation speed. For a given array voltage the current of each string is calculated by solving a nonlinear equation, which is independent from the other strings. Therefore, each nonlinear equation is solved in a different core and, finally, all the strings' currents are added to obtain the array current. simulation results put into evidence the capacity of the proposed model to reproduce the characteristic curves of an SP array and the reduction in the calculation time with respect to an equivalent model available in literature.

关键词： Mathematical model Integrated circuit modeling Computational modeling Nonlinear equations Parallel processing Short-circuit currents Photovoltaic systems

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modeling and simulation of VO2/Au Thin Film Transition Behavior

Modeling and Simulation of VO2/Au Thin Film Transition Behav...

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IEEE International conference on Semiconductor Electronics (ICSE)

作者： Asmaa Leila Hassein-Bey Ahdelkader Hassein-Bey Hakim Tahi Slimane Lafane Samira Abdelli-Messaci Mohamed El-Amine Benamar FUNDAPL University Saad Dahlab Blida 1(USDB 1) Blida Algeria Micro & Nano Physics Group University Saad Dahlab Blida 1(USDB 1) Blida Algeria Microelectronics and Nanotechnology Division (CDTA) Cité20Août 1956 Algiers Algeria Ionized Medium and Laser Division (CDTA)Cité20Août 1956 Algiers Algeria

Vanadium dioxide (VO 2 ) exhibits a metal-insulator transition (MIT) near 68°C with a unique sharp resistivity change. Below this temperature, it behaves as a semiconductor with a high electrical resistivity, above it the material behaves as a metal with a low electrical resistivity. In this paper, modeling and FEM simulation using Comsol Multiphysics of metal-insulator transition behavior in VO 2 /Au thin film have been carried out in order to evaluate the electrical resistance behavior as a function of applied voltage and temperature sweeps. The simulation results present a similar transition behavior as in experiments owning a good sensitivity even at room temperature under a specific voltage. In addition, these simulations could be of a great interest to design potential sensors based on this transition metal oxide materials thin layer. The simulation results could be used as a powerful design tool for several MIT-based sensors and predict the feasibility of a variety of device with a high sensitivity at ambient temperature. Our simulations predict a transition at room-temperature under polarization of about 4.25V. Practically, in term of operating temperature range many applications are targeted going from data storage device to biosensors.

关键词： Temperature sensors Vanadium Gold Immune system Biological system modeling Temperature

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Including a Stochastic Model of Aging in a Reliability simulation Flow 14

Including a Stochastic Model of Aging in a Reliability Simul...

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作者： Toro-Frias, A. Martin-Lloret, P. Castro-Lopez, R. Roca, E. Fernandez, F. V. Martin-Martinez, J. Rodriguez, R. Nafria, M. Univ Seville CSIC IMSE CNM Inst Microelect Sevilla Seville Spain Univ Autonoma Barcelona Dept Engn Elect Barcelona Spain

ISBN: (纸本)9781509050529

The availability and efficiency of reliability simulators for analog ICs is becoming critical with the scaling of devices down to the nanometer nodes. Two of the main challenges here are how to simultaneously include different sources of unreliability (such as the time-zero or spatial variability and the aging or time-dependent variability), and how to account for the self-induced changes in device biasing (i.e., stress conditions) caused by the device wear-out. In addition to the already existing stochastic models for time-zero variability, new models for the stochastically-distributed aging mechanisms have been developed in recent years. The combination of these challenges with the need for dealing with a stochastic model for aging, causes a serious computational load issue. This paper presents different methods to accurately include reliability in the simulation of analog ICs while preventing the simulation to become unaffordable in terms of CPU time and load.

关键词： reliability simulation transistor aging BTI HCI stress process variability time-dependent variability CPU load

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Thermal design of Monocular Vision System used in Automotive Application 18

Thermal Design of Monocular Vision System used in Automotive...

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18th International conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in microelectronics and Microsystems (EuroSimE)

作者： Refai-Ahmed, Gamal Do, Hoa Raghupathy, Arun Kadam, Rubab Gillis, Jay Xilinx Inc 2100 Log Dr San Jose CA 95124 USA Elect Cooling Solut Inc 2344B Walsh Ave Santa Clara CA 95051 USA

ISBN: (纸本)9781509043446

Advanced driver assistance systems such as Forward Collision Warning or Lane Departure Warning on automobiles rely heavily on a vision-based system. One such system is a monocular camera that is mounted inside the cabin on the center of the windshield. This module has a temperature sensitive FPGA and Image Sensor. The module sees extreme temperature environments due to high solar radiation in the dashboard section of the vehicle. It is important to keep such a system under specified temperatures for reliable functioning and safety. This study presents a detailed methodology to analyze and design thermal management solutions for the automotive camera by factoring in the transient nature of its immediate surroundings. The transient environment that accounts for the temperature drop from the high initial ambient temperatures includes factors such as movement of the vehicle and/or turning on the air conditioner. Experiments help understand the boundary conditions required for the computational thermal analysis and appropriate experimental measurements are taken to define the relevant boundary conditions of the system.

关键词： Cameras Temperature measurement Atmospheric modeling Steady-state Temperature sensors Solar heating Field programmable gate arrays

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Resist model setup for negative tone development at 14NM node

Resist model setup for negative tone development at 14NM nod...

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China Semiconductor Technology International conference (CSTIC)

作者： Lijun Zhao Lisong Dong Libin Zhang Yayi Wei Tianchun Ye University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China

The shrinkage effect of negative tone development (NTD) process is the primary cause of the mismatch between simulation data and experimental data. Therefore, the resist model is strongly required in the lithography simulation for NTD process. A practical flow of building a resist model is presented for 14nm NTD process, including test patterns design, model calibration and model verification. The test patterns are designed according to the optical parameters and resist parameters. Then, we use experimental data to calibrate and verify the model. The results show the simulation data have the same trend with experimental data, which indicates that the resist model has the capacity of capturing the resist shrinkage effect of NTD process.

关键词： Resists Calibration Semiconductor device modeling Data models Optical imaging Lithography Optical reflection

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