检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

1,367 篇 会议
46 篇 期刊文献
6 册 图书

馆藏范围

1,419 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

615 篇 工学
- 387 篇 电气工程
- 246 篇 电子科学与技术（可...
- 221 篇 计算机科学与技术...
- 128 篇 材料科学与工程（可...
- 119 篇 软件工程
- 89 篇 机械工程
- 66 篇 动力工程及工程热...
- 59 篇 控制科学与工程
- 42 篇 化学工程与技术
- 35 篇 信息与通信工程
- 31 篇 仪器科学与技术
- 23 篇 力学（可授工学、理...
- 15 篇 冶金工程
- 15 篇 生物医学工程（可授...
- 10 篇 建筑学
- 9 篇 光学工程
- 9 篇 土木工程
- 8 篇 交通运输工程
- 8 篇 安全科学与工程
- 7 篇 生物工程
255 篇 理学
- 146 篇 物理学
- 116 篇 数学
- 45 篇 化学
- 22 篇 系统科学
- 10 篇 生物学
- 10 篇 统计学（可授理学、...
38 篇 管理学
- 37 篇 管理科学与工程(可...
8 篇 医学
- 7 篇 临床医学
- 6 篇 基础医学(可授医学...
- 5 篇 药学(可授医学、理...
4 篇 法学
4 篇 艺术学
2 篇 农学
1 篇 经济学
1 篇 教育学

主题

272 篇 computational mo...
230 篇 integrated circu...
190 篇 circuit simulati...
179 篇 microelectronics
126 篇 semiconductor de...
115 篇 analytical model...
107 篇 solid modeling
96 篇 mathematical mod...
65 篇 simulation
61 篇 silicon
58 篇 predictive model...
53 篇 hardware design ...
53 篇 micromechanical ...
50 篇 load modeling
50 篇 hardware
49 篇 cmos technology
47 篇 spice
45 篇 design automatio...
43 篇 logic gates
42 篇 finite element a...

机构

13 篇 institute of mic...
13 篇 institute of mic...
12 篇 institute of mic...
7 篇 institute of mic...
6 篇 department of mi...
6 篇 institute of mic...
6 篇 department of mi...
6 篇 school of softwa...
5 篇 school of microe...
5 篇 nxp semiconducto...
5 篇 national microel...
5 篇 school of microe...
5 篇 institute of mic...
5 篇 philips applied ...
5 篇 imec leuven
5 篇 institute of mic...
5 篇 amic angewandte ...
5 篇 agilent technol ...
5 篇 delft university...
4 篇 shanghai researc...

作者

10 篇 xiaowu zhang
10 篇 roca e.
9 篇 castro-lopez r.
9 篇 a. napieralski
8 篇 rodriguez r.
8 篇 nafria m.
7 篇 l.j. ernst
7 篇 g.q. zhang
7 篇 martin-martinez ...
7 篇 sven rzepka
7 篇 fernandez f. v.
7 篇 s. selberherr
7 篇 zhang gq
6 篇 andrzej napieral...
6 篇 m.k. iyer
6 篇 ru huang
6 篇 n. ranganathan
6 篇 k.m.b. jansen
5 篇 khaoula mbarek
5 篇 sami ghedira

语言

1,403 篇 英文
10 篇 中文
3 篇 德文
3 篇 其他

检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"

共 1419 条记录，以下是441-450 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

Investigation on Impact of Fin Width on Single-Event-Transient in Bulk and SOI FinFETs

Investigation on Impact of Fin Width on Single-Event-Transie...

引用

International conference on Solid-State and Integrated Circuit Technology

作者： Gensong Li Xia An Zhexuan Ren Jianing Wang Ru Huang Institute of Microelectronics Peking University Beijing China Faculty of Information Technology Beijing University of Technology Beijing China

In this paper the impact of fin width on Single-Event-Transient (SET) of 14 nm bulk FinFETs is investigated and compared with SOI FinFETs by 3D TCAD simulation. simulation results show that for bulk FinFETs, the collected charge and SET pulse width increase with fin width. For SOI FinFETs, the collected charge increases with fin width while SET pulse width gradually saturates. Compared with SOI FinFETs, both the collected charge and pulse width of bulk FinFETs are larger, and this difference enhances with the increase of fin width, which implies that fin width has much stronger impact on collected charge and SET pulse width in bulk FinFETs. Besides, the charge collected by drift diffusion in bulk FinFETs is two orders of magnitude larger than SOI FinFETs. The results imply that the impact of fin width on SET of FinFETs should be taken into consideration for radiation hardened design.

关键词： FinFETs Ions Substrates Solid modeling Random access memory Logic gates Radiation effects

来源：评论

学校读者我要写书评

暂无评论

Nonlinear modeling of Cross-Coupled Regenerative Sampling Oscillators 13

Nonlinear Modeling of Cross-Coupled Regenerative Sampling Os...

引用

13th conference on Ph.D. Research in microelectronics and Electronics (PRIME)

作者： Ghaleb, Hatem El-Shennawy, Mohammed Joerges, Udo Carta, Corrado Ellinger, Frank Tech Univ Dresden Chair Circuit Design & Network Theory D-01062 Dresden Germany

ISBN: (纸本)9781509065080

This paper presents two approaches to model the startup behavior of cross-coupled oscillators for regenerative sampling applications. The first approach closely models the building blocks and connections of the circuit at the device level, whereas the second approach uses an equivalent model based on the analysis of the differential currents in the circuit to simplify the calculation and obtain a faster solution. The models have been implemented using standard components from the "analogLib" and "ahdlLib" libraries in the CADENCE design environment, which provides access to familiar powerful tools and simulation setups. Thus, the design time is significantly reduced. The model is extended with an ideal mixer and the results are verified with the down-converted output of a fabricated 145-GHz regenerative oscillator. This work facilitates the study of the startup behavior of oscillators for a wide range of applications without the need for complex mathematical analysis.

关键词： injection-locked oscillators integrated circuit modeling microwave circuits millimeter-wave mm-wave radio frequency sub-terahertz sub-THz wireless communication

来源：评论

学校读者我要写书评

暂无评论

The Impact of PTS Doping and Fin Angle on TID Response of 14-nm bulk FinFETs

The Impact of PTS Doping and Fin Angle on TID Response of 14...

引用

International conference on Solid-State and Integrated Circuit Technology

作者： Jia-Ning Wang Xia An Zhe-Xuan Ren Gen-Song Li Wan-Rong Zhang Ru Huang Faculty of Information Technology Beijing University of Technology Beijing China Institute of Microelectronics Peking University Beijing China

In this paper, the impact of punch-through stop (PTS) doping and fin angle on the total ionizing dose (TID) response of 14nm bulk FinFETs are investigated by 3D TCAD simulation. The off-state leakage current (I off ) degradation induced by TID irradiation is effectively reduced with the increase of PTS doping concentration and depth. The optimized PTS doping condition is illustrated to improve the TID hardness of bulk FinFETs. Besides, the impact of fin angle on TID response is also investigated, which shows limited impact on the performance degradation. The results may provide guideline for radiation hardening process design of bulk FinFETs.

关键词： FinFETs Doping Leakage currents Semiconductor process modeling Radiation effects Degradation Logic gates

来源：评论

学校读者我要写书评

暂无评论

Small-Signal modeling of In₂O₅Sn Based Transparent Gate Recessed Channel MOSFET for Microwave/MA Applications

Small-Signal Modeling of In<sub>2</sub>O<sub>5</sub>Sn Based...

引用

2017 IEEE Asia Pacific Microwave conference (APMC)

作者： Kumar, Ajay Tripathi, M. M. Chaujar, Rishu Delhi Technol Univ Dept Elect Engn Delhi India Delhi Technol Univ Dept Appl Phys Delhi India

ISBN: (纸本)9781538606407

In this paper, modeling of the small signal equivalent circuit of Transparent Gate Recessed Channel (TGRC) MOSFET in terms of Z (impedance) parameters and Y (admittance) parameters is presented. The modeled and simulated results are compared with Conventional Recessed Channel (CRC) MOSFET having metal gate electrode at THz frequency range, using ATLAS-3D device simulator. Instead of metal gate, In2O5Sn (Indium Tin Oxide) ITO as a transparent conducting oxide (TCO) is amalgamated. The input impedance of TGRC-MOSFET enhances by 99.4% as compared to CRC-MOSFET, and input admittance improves by 32.9% in the proposed device as compared to its counterpart. simulation results reveal that the proposed device design improves the small signal behavior thus, providing the detailed insight to RF engineers for microwave applications/RFIC design.

关键词： CRC-MOSFET ITO TCO THz TGRC-MOSFET Y-parameters Z-parameters

来源：评论

学校读者我要写书评

暂无评论

Thermal design and Characterization of High Power SiC Inverter with Low Profile and Enhanced Thermal Performance

Thermal Design and Characterization of High Power SiC Invert...

引用

IEEE Electronic Components and Technology conference

作者： Gongyue Tang Tai Chong Chai Xiaowu Zhang A*STAR (Agency for Science Technology and Research) Institute of Microelectronics Singapore

A single phase high power package is designed and developed in this study. The developed power package achieves significant thermal performance improvement as compared with the conventional wire-bonded power package. The improvement is attributed to two features of the package design. Firstly, the SiC chips are embedded into the active metal brazed (AMB) substrates with specially designed cavities, as such the heat transfer path from the embedded SiC chips to the liquid cooled heat sink attached to the bottom side of AMB substrate is shortened. Moreover, customized copper clips are introduced as the interconnections between the SiC chips and top metal layer of the substrate in the same level, and the top surface of the power package remains flat. As such another heat sink can be added to the top side of the package to improve the power package thermal performance further by implementing this double side cooling (DSC) Scheme. Results of the modeling and simulation show that the proposed package junction to case thermal resistance is ~50% less than the junction to case thermal resistance of the conventional wire bonded power package with same size and same power rate. Further utilizing two heat sinks on the both sides of the proposed power package which is not suitable to the conventional wire bonded power package, the junction to case thermal resistance of the proposed power package reduces another 20%. In addition, the effects of the core and metal layers of the AMB substrate on the thermal resistance of the proposed power package are investigated systematically. Finally, the thermally optimized power package is fabricated and assembled. Thermal characterization has been conducted and thermal performance of the developed power package has been evaluated. The simulation results and characterization results match well with each other.

关键词： high power modules thermal management SiC chip dual-side-cooling

来源：评论

学校读者我要写书评

暂无评论

Proceedings of the International conference on microelectronics, ICM

Proceedings of the International Conference on Microelectron...

引用

30th IEEE International conference on microelectronics, MIEL 2017 - Proceedings

ISBN: (纸本)9781538625637

The proceedings contain 74 papers. The topics discussed include: non-volatility by spin in modern nanoelectronics;innovative bipolar-CMOS integration for RF communication circuits with low-cost high-performance horizontal current bipolar transistor (HCBT);SiC power MOSFETs: the current status and the potential for future development;an overview of the modeling and simulation of the single event transients at the circuit level;basic trends in electronic components product range development: radiation hardness aspects;the scaling issues of subnanometer EOT gate dielectricsfor the ultimate nano CMOS technology;high sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology;functional role of Ca2+currents within the stereocilia as bio-MEMS: a modeling study;a comparison of the tri-layer transmission line model and a finite element model for Ohmic contact analysis;SOI based double Source Tunnel FET (DS-TFET) with high on-current and reduced turn-on voltage;formation of short terahertz electromagnetic pulses in nonlinear paraelectrics;implementation of fuzzy logic operators as digital asynchronous circuits in CMOS technology;parallel matrix multiplication in 2-gain Kalman filter realized in hardware;analog ASIC TID behavior in a temperature range;stochastic time response of adsorption-based micro/nanobiosensors with a fluidic reaction chamber: the influence of mass transfer;effect of high energy ball milling on the morphology and magnetic properties of powder prepared from HD Nd2Fe14B material;and on the design of compact intelligent industrial transmitters based on piezoresistive MEMS pressure sensors.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Optimization of industrial microsystems by tailored modeling: System simulation of a silicon MEMS microphone

Optimization of industrial microsystems by tailored modeling...

引用

MikroSystemTechnik Kongress 2017: MEMS, Mikroelektronik, Systeme - MikroSystemTechnik conference 2017: MEMS, microelectronics, Systems

作者： Schrag, G. Künzig, T. Wachutka, G. Technische Universität München Arcisstraße 21 München80333 Germany Infineon Technologies AG Am Campeon 1-12 Neubiberg85579 Germany

ISBN: (纸本)9783800744916

We demonstrate that a comprehensive, physically based system-level approach based on the generalized Kirchhoffian network theory constitutes a reliable basis for the optimization of enhanced industrial MEMS devices and systems. The combination of distributed and lumped system-level models offers detailed insight in the device operation while, at the same time, keeping the computational expense low. The possibility to implement these models into standard system simulators facilitates the co-simulation with the electronic circuitry. The benefits of this modular, tailored system-level modeling approach, which combines lumped with distributed models, are exemplified by applying it to an industrial capacitive silicon microphone. This way, all important microphone characteristics can be investigated by the presented model and design measures can be identified towards optimized performance w.r.t a higher signal-to-noise ratio, one of the most important key figures for microphone design. © VDE VERLAG GMBH ∙ Berlin ∙ Offenbach

关键词： Microphones

来源：评论

学校读者我要写书评

暂无评论

Nonlinear modeling of cross-coupled regenerative sampling oscillators

Nonlinear modeling of cross-coupled regenerative sampling os...

引用

Ph.D. Research in microelectronics and Electronics (PRIME)

作者： Hatem Ghaleb Mohammed El-Shennawy Udo Jörges Corrado Carta Frank Ellinger Chair for Circuit Design and Network Theory Technische Universität Dresden Dresden Germany

This paper presents two approaches to model the startup behavior of cross-coupled oscillators for regenerative sampling applications. The first approach closely models the building blocks and connections of the circuit at the device level, whereas the second approach uses an equivalent model based on the analysis of the differential currents in the circuit to simplify the calculation and obtain a faster solution. The models have been implemented using standard components from the “analogLib” and “ahdlLib” libraries in the CADENCE design environment, which provides access to familiar powerful tools and simulation setups. Thus, the design time is significantly reduced. The model is extended with an ideal mixer and the results are verified with the down-converted output of a fabricated 145-GHz regenerative oscillator. This work facilitates the study of the startup behavior of oscillators for a wide range of applications without the need for complex mathematical analysis.

关键词： Oscillators Integrated circuit modeling Mathematical model Solid modeling Analytical models simulation Mixers

来源：评论

学校读者我要写书评

暂无评论

modeling a Si homojunction SOI-Tunnel FET with configurable voltage difference on gates

Modeling a Si homojunction SOI-Tunnel FET with configurable ...

引用

2017 IEEE International conference on Applied System Innovation, ICASI 2017

作者： Wei, Sufen Zhang, Guohe Liu, Jing Huang, Huixiang Geng, Li Shao, Zhibiao Yang, Cheng-Fu School of Microelectronics Xi'an Jiaotong University Shaanxi710049 China School of Information and Engineering Jimei University Fujian361021 China Department of Chemical and Materials Engineering National University of Kaohsiung Kaohsiung University Rd. Nan-Tzu District811 Taiwan

ISBN: (纸本)9781509048977

The impact of gate voltage differences on the performance of the novel n-Type silicon homojunction SOI-Tunnel FET is studied. Based on numerical simulation results using Synopsys Technology Computer-Aided design (TCAD), the higher on-current and the ultra-low off-current are observed as compared to that of a conventional SOI-Tunnel FET. The analysis of energy band corroborates that gate voltage differences can revamp the potential barrier in the channel region, which can in turn modulate the drain current. © 2017 IEEE.

关键词： Threshold voltage

来源：评论

学校读者我要写书评

暂无评论

Co-design for Extreme Large Package Solution with Embedded Fine Pitch Interposer (EFI) Technology

Co-design for Extreme Large Package Solution with Embedded F...

引用

IEEE Electronic Components and Technology conference

作者： F.X. Che David Ho T.C. Chai Institute of Microelectronics A*STAR (Agency for Science Technology and Research) Innovis Tower Singapore

Embedded Fine pitch Interposer (EFI) technology using Fan-out approach is demonstrated for heterogeneous integration as a cost effective and enabling technology. Co-design modelling methodology is established for EFI technology, including wafer process, package assembly and board level reliability to optimize structure design, wafer process, assembly process and material selection. Through wafer warpage modelling, desirable glass carrier, photo-dielectric and molding compound materials are suggested to reduce wafer warpage. Effects of second molding and stiffener on assembly induced package warpage are simulated. Board level solder joint reliability is investigated and optimized based on simulation results. The optimized materials and structure design are determined based on co-design modeling and simulation results to achieve successful EFI wafer fabrication, assembly process and board level reliability for extreme large package with EFI interposer.

关键词： co-design modelling finite element analysis board level reliability EFI interposer warpage

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共142页 << < 41 42 43 44 45 46 47 48 49 50 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：