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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"

共 1419 条记录，以下是911-920 订阅

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Model based design optimization of micromechanical systems, based on the Cosserat theory

Model based design optimization of micromechanical systems, ...

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International conference on Optimization of Electrical and Electronic Equipment, OPTIM

作者： T. Wiegand D. Peters R. Laur R. Rosing A. Richardson M. Del Sarto L. Baldo Institute of Electromagnetic Theory and Microelectronics University of Brethemen Germany Institute for Electromagnetic Theory and Microelectronics (ITEM) University of Bremen Germany Lancaster University Centre for Microsystems Engineering UK STMicroelectronics MEMS Product Division Milano Italy

ISBN: (纸本)9781424415441

In this paper we present the model based design optimization on a micromechanical system which is described by a VHDL-AMS behaviour model, based on the Cosserat theory. The application is a gyroscope test structure developed by STmicroelectronics. The schematic of the microactuator is built up from component models developed in Lancaster within previous work. The equations of motion of the beam model were derived using Cosserat theory. The rigid body model was adjusted to capture the behaviour of the central disk with comb-drives of the microactuator target structure. Within the model based design optimization system MODOS developed at the University of Bremen a model optimization and a model based design optimization were performed. In this report we represent the theoretical background of the modeling and optimization process and publish the received results.

关键词： Optimization design optimization Mathematical model Springs simulation Search methods Microactuators

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The Performance Study of Two Genetic Algorithm Approaches for VLSI Macro-Cell Layout Area Optimization

The Performance Study of Two Genetic Algorithm Approaches fo...

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Asia International conference on modeling & simulation

作者： H.A. Rahim Ab Al Hadi Ab Rahman R. Badlishah Ahmad Wan Nur Suryani Firuz Wan Ariffin Muhammad Imran Ahmad School of Computer and Communication Engineering Universiti Malaysia Pedis Kuala Perlis Perlis Malaysia Department of Microelectronics and Computer Engineering Faculty of Electrical Engineering Universiti Teknologi Malaysia Skudai Johor Malaysia

Very large scale integrated (VLSI) design has been the subject of much research since the early 1980s where the VLSI cell placement emerges to be a crucial stage in the chip design. Its area optimization is very important in order to reduce the delay and include more functionalities to the designed chip. The VLSI cell area optimization continues to become increasingly important to the performance of VLSI design due to the accelerating of the design complexities in VLSI. Thus, this paper addresses the performance comparisons of two different types of genetic algorithm (GA) techniques for VLSI macro-cell layout area optimization by utilizing the adopted method of cell placement that is binary tree method. Two GA approaches which are simple genetic algorithm (SGA) and steady-state genetic algorithm (SSGA) have been implemented and their performances in converging to their global minimums are examined and discussed. The performances of these techniques are tested on microelectronics Center of North Carolina (MCNC) benchmark circuit's data set. The experimental results demonstrate that both algorithms achieve acceptable area requirement compared to the slicing floorplan approach (Lin et al., 2002). However, SSGA outperforms SGA where it achieves faster convergence rate and obtains more near optimum area.

关键词： Genetic algorithms Very large scale integration design optimization Circuit testing Chip scale packaging Delay Acceleration Optimization methods Binary trees Steady-state

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A Study of Advanced modeling Methodology of CMOS-compatible RF-MEMS Devices for Integrated Circuit design

A Study of Advanced Modeling Methodology of CMOS-compatible ...

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2008 9th International conference on Solid-State and Integrated-Circuit Technology

作者： Wenzheng Wu1,2*, Mengjun Jia1, Xinxin Li3, Yilong Hao1, Xing Zhang2, Yuhua Cheng1 1 Shanghai Research Institute of microelectronics (SHRIME), Peking University 608 Shengxia Road, Zhang-Jiang High-Tech Park, Pudong, Shanghai 201203, P. R. China 2 School of Software and microelectronics, Peking University, Beijing 102600, P. R. China 3 Shanghai Institute of Microsystem and Information Technology (SIMIT), CAS, Shanghai 200050, P. R. China

With the rapid development of CMOS-compatible MEMS technology, it has been used to improve the performance of monolithic integrated RF circuits. To take advantages of the MEMS devices in RF circuits, accurate models are needed, with the considerations of important effects that impact the electrical behavior of the devices. In this paper, we explore the modeling methodology for CMOS-compatible MEMS inductors, which are fabricated with two different process approaches. Based on device simulation results for mechanical and electrical behavior, we propose a SPICE-like model for CMOS-compatible RF-MEMS inductors used for integrated circuit design.

关键词： A Study of Advanced modeling Methodology of CMOS-compatible RF-MEMS Devices for Integrated Circuit design

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Stochastic finite element modeling of thermoelastic quality factor of micro-beams

Stochastic finite element modeling of thermoelastic quality ...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Severine Lepage Gary Weickum Kurt Maute Beckman Institute University of Illinois Urbana-Champaign Urbana-Champaign IL USA Center for AeroSpace Structures Department of AeroSpace Engineering Sciences University of Colorado Boulder Boulder CO USA

In the design of micro-electromechanical systems (MEMS) such as micro-resonators, one of the major dissipation phenomena to consider is thermoelastic damping. The performance of such MEMS is directly related to their thermoelastic quality factor which has to be predicted acurately. Moreover, the performance of MEMS depends on manufacturing processes which cause substantial uncertainty in the geometry and in the material properties of the device. The aim of this paper is to provide a framework to account for uncertainties in the hnite element analysis of thermoelastic damping in MEMS. Four stochastic methods are investigated: perturbation stochastic finite element method (SFEM), spectral SFEM, projection method and Monte-Carlo method. Due to the nature of the thermoelastic problem, these stochastic methods are extended to the resolution of non-symmetric damped eigenproblems. The methods are applied on the analysis of the thermoelastic quality factor of a micro-beam whose elastic modulus is considered as random.

关键词： Stochastic processes Finite element methods Thermoelasticity Q factor Micromechanical devices Damping Uncertainty Microelectromechanical systems Manufacturing processes Geometry

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Robustness evaluation of ESD protection devices in NEMS using a novel TCAD methodology

Robustness evaluation of ESD protection devices in NEMS usin...

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IEEE International conference on Nano/Micro Engineered and Molecular Systems (NEMS)

作者： Qiang Cui Shurong Dong Juin J. Liou Yan Han Institute of Microelectronics and Photoelectronics University of Zhejiang Hangzhou China Department of Electrical and Computer Engineering University of Central Florida Orlando USA

Robustness performance is one of the most important concerns in the design of ESD (electro-static discharge) protection devices, and this quality plays a more and more important role in NEMS protection devices. Improvement of robustness requires not only experience but also TCAD (technology computer aided design) methodology to evaluate ESD protection devices in NEMS. A novel TCAD methodology for robustness evaluation is presented and developed here. This methodology is based on mix-mode transient circuit simulation, and this simulation method depicts ESD events better. Through analyse of the time effect on power accumulation, an important key parameter, named as robustness coefficient, is provided to characterize and evaluate robustness performance of ESD protection devices quantificationally. Based on analyse of this robustness coefficient of different ESD devices under different ESD models and levels, the results show that this TCAD methodology has a good ability of convergence, and can be used to evaluate robustness performance of ESD protection devices objectively.

关键词： Robustness Electrostatic discharge Protection Nanoelectromechanical systems Circuit simulation Performance analysis design methodology Computational modeling Discrete event simulation Convergence

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modeling of the Effective Mobility for Polysilicon Thin Film Transistor

Modeling of the Effective Mobility for Polysilicon Thin Film...

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2008 9th International conference on Solid-State and Integrated-Circuit Technology

作者： Bing-Hui Yan Bin Li Ruo-He Yao Xue-Ren Zheng Institute of Microelectronics School of Electronic and Information EngineeringSouth China University of Technology

In this paper,a model of the effective mobility for the on-current of p-Si TFT is proposed,taking into account the gain size,the drain bias,the imperfection crystal scattering mechanism,and the surface-roughness scattering *** is found that at the linearity region,the effective mobility decreases with the drain bias increasing and increases with the grain size *** simulation results are in a good agreement with the experimental data.

关键词： TFT modeling of the Effective Mobility for Polysilicon Thin Film Transistor

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A novel high performance CMOS current switch drive

A novel high performance CMOS current switch drive

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International conference on Solid-State and Integrated Circuit Technology

作者： Zhangming Zhu Yuanjie Sun Yintang Yang Institute of Microelectronics Xidian University Xi'an China

ISBN: (纸本)9781424421855;9781424421862

The influence of current switch driver output resistance and glitch energy mechanism for D/A converter are analyzed, and the principle of current switch driver design is proposed. Based on the proposed design principle, a novel simple high performance current switch driver is proposed. It comprises four NMOS transistor, two PMOS transistor and a substrate bias capacitor. The introduction of bias capacitor not only lowers swing switch signal for restraining the capacitive coupling of the control signals, but also restrains the influence of substrate noise for analog blocks. By changed the size of PMOS transistors, the cross points of control signals and output signals are lowered for the dynamic performance of D/A converter. simulation results based on TSMC 0.35 ¿m CMOS technology BSIM3V3 model show that the driver have about 250 ps setting time and good dynamic performance, it is very suitable for high speed, high resolution current steering D/A converter.

关键词： Switches Driver circuits CMOS technology MOSFETs Capacitors Semiconductor device modeling Switching circuits Voltage control microelectronics Switching converters

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The stabilization controller design for a tripod type parallel manipulator used for active suspension of a delicate device

The stabilization controller design for a tripod type parall...

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IEEE conference on Control Technology and Applications (CCTA)

作者： Ozgur Atesoglu M. Kemal Ozgoren Microelectronics Guidance and Electro-Optics Division of Aselsan Inc. Akyurt Ankara Turkey Mechanical Engineering Dept. Middle East Technical University Ankara Turkey

This paper focuses on the nonlinear modeling of a tripod type parallel manipulator and the stabilization controller design for base disturbance attenuation. The active tripod is designed to isolate a delicate device, carried by a host vehicle, from the disturbing vibrations coming from the chassis of this host vehicle. For that purpose, a controller is designed and the tripod is used for vibration attenuation as an active suspension system. A detailed simulation model including the nonlinear model of the tripod type parallel manipulator, the models of the stabilization controller, the linear actuators, i.e. the legs of the tripod, the inertial sensors, i.e. the inertial navigation system (INS) on the active platform, and the linear encoder integrated between the moving and stationary parts of the tripod are built and used in the study. This simulation model is used to evaluate the performance of the designed controller for the real-time data acquisition from an INS, which is mounted on the vehicle chassis, during a rough off-road cruise of the host vehicle. The data gathered from the vehicle is fed through the simulation model and the performance of the designed controller is examined and discussed under the real conditions of the desired application.

关键词： Control systems USA Councils conferences

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Analysis of Novel MagFET Structures for Built-in Current Sensors Supported by 3D modeling and simulation

Analysis of Novel MagFET Structures for Built-in Current Sen...

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International conference on Advanced Semiconductor Devices and Microsystems (ASDAM)

作者： Juraj Marek Daniel Donoval Martin Donoval Martin Dařĺček Department of Microelectronics Slovak University of Technology Bratislava Slovakia

Novel built-in current sensor structures based on selected electrophysical properties of a magnetic FET (MAGFET) is presented. The proposed sensor structures may be used for on-chip current testing in deep-submicron circuits with ultra low-voltage power supply. Their advantage is mainly in elimination of the undesired supply voltage reduction on the current monitor, commonly created by standard current test methods. Analysis of the influence of various device structures and dimensions on their electro-physical parameters and electrical characteristics is presented. All versions of MAGFET structure were designed using design rules of 1mum BiCMOS technology.

关键词： Analytical models Magnetic sensors Circuit testing Magnetic analysis Circuit simulation Magnetic properties FETs Power supplies Voltage Monitoring

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A Novel Scaling Theory for Effective Conductive Path Effect of Double Gate (DG) MOSFETs for Nano-Scale CMOS Circuit design

A Novel Scaling Theory for Effective Conductive Path Effect ...

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International conference on Signal Processing, Communication and Networking (ICSCN)

作者： N. B. Balamurugan K. Sankaranarayanan V Priyadharsini M. Ishwarya Devi Thiagarajar College of Engineering Anna University Madurai India VLB Janakiammal College of Engineering Anna University Coimbatore Tamilnadu India Thiagarajar College of Engineering Anna University Madurai

The steady down-scaling of complementary metal oxide semiconductor (CMOS) device dimensions has been the main stimulus to the growth of microelectronics and computer-aided ultra large scale integration (ULSI) design. Double gate (DG) SOI MOSFET is one of the most promising technologies for ultimate scaling of CMOS technology. By studying the subthreshold conducting phenomenon of DG MOSFETs, the effective conductive path effect (ECPE) is employed to acquire the natural length to guide the design. With ECPE, the minimum channel potential is used to monitor the subthreshold behavior. The effect of ECPE on scaling factor significantly improved the subthreshold swing compared to conventional scaling rule. The accuracy of results obtained using our analytical model is verified using 2-D numerical simulation. The model offers the basic designing guidance for double-gate MOSFETs.

关键词： MOSFETs Circuit synthesis CMOS technology Analytical models Numerical simulation Ultra large scale integration Poisson equations Educational institutions Doping Semiconductor device modeling

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