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检索条件"任意字段=Conference on Design, Modeling, and Simulation in Microelectronics"

共 1419 条记录，以下是961-970 订阅

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Executable system-level specification models containing UML-based behavioral patterns

Executable system-level specification models containing UML-...

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design, Automation and Test in Europe conference and Exhibition

作者： Leandro Soares Indrusiak Andreas Thuy Manfred Glesner Institute of Microelectronic Systems Technische Universität Darmstadt Germany

ISBN: (纸本)9783981080124

Behavioral patterns are useful abstractions to simplify the design of the communication-centric systems. Such patterns are traditionally described using UML diagrams, but the lack of execution semantics in UML prevents the co-validation of the patterns together with simulation models and executable specifications which are the mainstream in today's system level design flows. This paper proposes a method to validate UML-based behavioral patterns within executable system models. The method is based on actor orientation and was implemented as an extension of the Ptolemy II framework. A case study is presented and potential applications and extensions of the proposed method are discussed

关键词： Unified modeling language Object oriented modeling Mathematical model microelectronics System-level design Software engineering Space exploration Hardware design languages design optimization Pattern recognition

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Challenges to Accuracy for the design of Deep-Submicron RF-CMOS Circuits

Challenges to Accuracy for the Design of Deep-Submicron RF-C...

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Asia and South Pacific design Automation conference

作者： Sadayuki Yoshitomi Semiconductor Company Microelectronics Centre Toshiba Corporation Kawasaki Japan

ISBN: (纸本)1424406293;9781424406296

Two challenges for the accurate prediction of GHz CMOS analog/RF building blocks are presented. Challenging the usage of new compact MOSFET models enhances the simulation accuracy. The capability of EKV3.0 model has been studied by applying to TOSHIBA'S 130nm RF-CMOS technology. The verification facts have shown that EKV3.0 model offered excellent modeling capability of both DC and RF (small and large signal). Challenging the efficient use of electro-magnetic (EM) with one practical setup offered successful prediction of the EM effects in the chip. Enhanced study of EM co-simulation technique that links two challenges had shown the perfect prediction of the TOSHIBA'S RF-CMOS circuit (VCO).

关键词： MOSFET circuits Semiconductor device modeling Radio frequency CMOS technology Voltage-controlled oscillators Predictive models Silicon Silicides Voltage Electrons

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Application of Higher Order Derivatives Method to Parametric simulation of MEMS

Application of Higher Order Derivatives Method to Parametric...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Vladimir Kolchuzhin Jan Mehner Thomas Gessner Wolfram Doetzel Department of Microsystems and Precision Engineering Chemnitz University of Technology Germany Department Multi Device Integration Fraunhofer Institute for Reliability and Microintegration Germany

The paper demonstrates the advanced simulation methodology based on differentiation of the discretized finite element (FE) equations to parametric simulation of micro-electro-mechanical-systems (MEMS). The idea of the approach is to compute not only the governing system matrices but also high order derivatives (HOD) with regard to design parameters by means of automatic differentiation (AD). As result, Taylor vectors of the model response can be expanded in the vicinity of the initial position with regard to dimensional and physical parameters. The objective of this presentation is to demonstrate the viability of HOD methods to parametric simulation of MEMS in the static, modal, frequency response domains on the basis of the structural analysis and macromodeling.

关键词： Micromechanical devices Computational modeling Iron Finite element methods Frequency response Analytical models Microelectromechanical devices Circuits Shape Taylor series

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A new approach to analysis and simulation of single and coupled low-loss interconnects.

A new approach to analysis and simulation of single and coup...

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European conference on Circuit Theory and design, ECCTD

作者： Agnieszka Ligocka Wojciech Bandurski Piotr Rydlichowski Chair of Multimedia Telecommunication and Microelectronics Poznan University of Technology Poznan Poland

In the paper the new method of computing the threshold crossing times for the low-loss interconnect is presented. The interconnect output response is calculated using the multiple scales method with the perturbation parameter related to the line losses. From the derived formula, the analytical form for threshold crossing time is obtained. The algorithm that uses the step response calculations for two symmetric, coupled interconnects is also presented.

关键词： Analytical models Integrated circuit interconnections Inductance Coupling circuits Power system interconnection Computational modeling Power transmission lines Circuit simulation Integrated circuit technology Magnetic materials

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Optimization of Cu Low-k bond pad designs to improve mechanical robustness using the Area Release Energy method

Optimization of Cu Low-k bond pad designs to improve mechani...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： R. A. B. Engelen O. van der Sluis R. B. R. van Silfhout W.D. van Driel V. Fiori Philips Applied Technologies Eindhoven Netherlands NXP Semiconductors Nijmegen Netherlands STMicroelectronics Inc. Crolles France

In the development of present and future CMOS-technologies (CMOS065 and beyond) for microelectronic components the combination of state-of-the-art modeling techniques and experimental testing is crucial and provides a challenge to address the thermo-mechanical reliability issues and the demand for shorter time-to-market by the industry. Nowadays these modeling techniques often involve the construction of very detailed Cu low-k IC structures, which is still very time-consuming and computationally demanding. This paper adresses an alternative modeling strategy that intends to gain fundamental insights and understanding of the mechanisms that have an impact on the thermo-mechanical reliability of a Cu low-k device. As an example the relation between the metal densities of the various layers in a typical Cu low-k IC bond pad structure and the area release energy (ARE) criterion has been investigated. The modeling and computational effort have been considerably limited by building a simplified two- dimensional bond pad model. This model is constructed such that it is well capable to reveal the impact on the thermo-mechanical reliability and such that it is still representative for the behaviour of advanced Cu low-k structures. When optimizing the bond pad towards lower ARE levels for better mechanical robustness the impact of the metal density within the BE layers is evident. Furthermore, it shows that the metal density in a single layer does not only affect the ARE level in that specific layer, but it also influences the ARE profile within the entire stack. Clearly, the presented modeling strategy is suitable to identify the design parameters that play an important role when optimizing the thermo-mechanical performance of advanced Cu low-k structures. In combination with experimental tests (e.g. industrial qualification tests, interface strength measurements, etc.) it may provide a robust tool to further improve and ensure the reliability of present and future IC bond p

关键词： design optimization Bonding Robustness Thermomechanical processes Integrated circuit modeling Integrated circuit testing microelectronics Time to market Construction industry Computational modeling

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High density Integrated Optoelectronic Circuits for High Speed Photonic Microsystems

High density Integrated Optoelectronic Circuits for High Spe...

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Ph.D. Research in microelectronics and Electronics (PRIME)

作者： K. Minoglou E. D. Kyriakis-Bitzaros G. Katsafouros G. Halkias A. Arapoyianni D. Syvridis Inst. of Microelectronics NCSR “Demokritos” Athens Greece Department of Informatics and Telecomunications University of Athens Athens Greece

The study of high density integrated optoelectronic circuits involves (a) the development of hybrid integration technologies and (b) the generation of models for the optoelectronic devices. To meet the first goal, a methodology for the heterogeneous integration of epitaxial GaAs wafers with fully processed standard bipolar complementary metal-oxide-semiconductor (CMOS) Si wafers, based on spin-on glass (SOG) /SiO 2 bonding, is presented. Further investigation on heterogeneous integration is achieved by presenting a second methodology for the integration of a photonic layer above CMOS integrated circuits: a novel metallic bonding technique that utilizes the Au-20Sn eutectic alloy along with the rare earth element (Gd) is developed for the bonding of complete optoelectronic (OE) dies, consisting of optical sources, detectors and waveguides, to CMOS circuits. To meet the second goal, an efficient model scheme that combines the nonlinear behavior of the input parasitics with the intrinsic fundamental device rate equations of the vertical cavity surface emitting lasers (VCSELs) is proposed. A systematic methodology for the model parameter extraction is presented. simulation results are compared with the experimental measurements while extraction and simulation procedures are implemented in commercial integrated circuit design tools. Finally, using the proposed model, the traditional laser diode driving (LDD) circuits have been evaluated for their suitability to drive VCSELs.

关键词： Integrated optoelectronics Vertical cavity surface emitting lasers Semiconductor device modeling Wafer bonding Optical waveguides Circuit simulation CMOS technology Integrated circuit technology Hybrid power systems Semiconductor process modeling

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Numerical modeling of Electrical Resistance of Interconnections in High-Tech Multilayer PCBs Manufactured by Magnetron Sputtering Deposition of Copper

Numerical Modeling of Electrical Resistance of Interconnecti...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Janusz Borecki Artur Wymyslowski Centre for Advanced Technology of Electronic Interconnections Tele and Radio Research Institute Warsaw Poland Faculty of Microsystem Electronics and Photonics Wroclaw University of Technology Wroclaw Poland

In the paper, authors focus on application of numerical simulation methods along with the experimental measurements to access the electrical resistance of interconnections in PCB (printed circuit board). The comparison of experimental and numerical results allow to define the design rules of interconnection properties and specification of interconnection and technology details depending on the selected application. Additionally, it is believed to allow course prediction of deposition process of conductive layer on via walls, without necessity of performing costly and time consuming experiments. In the paper authors present results and investigations which should lead to manufacture interconnections with aspect ratio (relation of via deep to via diameter) higher than 1, and diameter of via in the range of 25 to 150 mum.

关键词： Numerical models Electric resistance Magnetic multilayers Virtual manufacturing Sputtering Copper Integrated circuit interconnections Numerical simulation Electrical resistance measurement Electric variables measurement

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Evaluation of Creep in RF MEMS Devices

Evaluation of Creep in RF MEMS Devices

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Marcel van Gils Jeroen Bielen Gavin McDonald NXP Semiconductors Nijmegen Netherlands

RF MEMS are capacitive switches consisting of a suspended aluminum beam that can be pulled down by electrostatic force. At elevated temperatures and high mechanical stresses the aluminum beam can exhibit creep phenomena that result in shifting of device parameters as a function of time. Experimental and numerical methodologies are presented for measuring and predicting the effect of creep on the RF MEMS device performance. A constitutive creep model is implemented in a Finite Element code where the parameters of this constitutive model for creep in thin aluminum layers are determined by wafer curvature experiments. In order to distinguish creep effect from charging effects, special test structures are designed. simulations on the test with different geometries indicate the effect of creep and can result in design rules for the RF MEMS switches. The numerical predictions and the measured degradation on the RF MEMS switches are compared and conclusions are drawn with respect to the methodology.

关键词： Creep Radiofrequency microelectromechanical systems Switches Aluminum Semiconductor device modeling Testing Temperature Stress Electrostatic measurements Finite element methods

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simulation of Wafer Probing Process Considering Probe Needle Dynamics

Simulation of Wafer Probing Process Considering Probe Needle...

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Thermal, Mechanical and Multiphysics simulation and Experiments in Micro-Electronics and Micro-Systems EuroSimE

作者： Ilko Schmadlak Torsten Hauck Freescale Halbleiter Deutschland GmbH Munchen Germany

One key failure root cause during wafer production is the electrical test by probing all interconnects of each die of the wafer. The probing process can result in excessive damage of the back end of line (BEOL) wafer layers underneath the probe pad, especially if brittle low-k dielectrics are used. The industry is trying to reduce design limitations for these under pad areas. A 3D sub-modeling simulation approach has been used to investigate stress states in layers below the probe pad. The dynamic behavior of the needle is determined by modal analysis. Its representation and calculation is done by an analytical model using the modal superposition method. These small, specialized simulation models help to distribute the simulation effort, by handling specific aspects of the real process, such as the contact problem, needle dynamics and homogenization of fine structures. The results showed that the needle dynamics can be neglected during further studies. The static load due to the maximum displacement of the needle tip during the probe event is one magnitude higher then any dynamic driven load.

关键词： Probes Needles Testing Bonding Wire Contacts Production Dielectrics Electrical products industry Stress

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Separating control and data processing in RT level virtual IP components

Separating control and data processing in RT level virtual I...

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Ph.D. Research in microelectronics and Electronics (PRIME)

作者： Waseem Muhammad Sophie Coudert Rabea Ameur-Boulifa Renaud Pacalet System-on-Chip Laboratory (LaboratoriesoC) GET/ENST de Bretagne Sophia-Antipolis France

SoC validation has become more challenging due to extensive reuse of intellectual property (IP) components in today's design. simulation and formal validation techniques are suffering longer computation time, limited coverage and combinatorial explosion. To enhance both techniques, it is necessary to work at high abstraction level. In this perspective, the proposed methodology assists abstraction of IP components. We present in this paper a technique to separate control state machine from the data processing in register transfer level (RTL) IP models as first requirement for our notion of abstract data processing. A dependency analysis is performed on the given model based on the information of control and data inputs provided by the designer to obtain two separate entities in the form of control and data slice. The control slice and abstract functional representation of data slice are intended to be used for rapid simulation, static formal analysis and understanding the functionality of the model.

关键词： Process control Data processing Automatic control Registers Computational modeling Signal processing Explosions Performance analysis Data mining Pattern recognition

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